共查询到19条相似文献,搜索用时 93 毫秒
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对微波单片集成 (简称 MMIC)双栅 MESFET混频器的设计理论和工艺技术进行较为细致的研究。根据双栅 MESFET的理论分析与实验结果 ,建立了一种栅压调制 I- V特性的经验模型 ,推导了双栅 FET混频器变频增益公式。分析了栅压对改变非线性跨导在混频器中的作用。最后设计并加工出了芯片面积为 0 .75 mm× 1 .5 mm Ga As MMIC双栅 FET混频器。 相似文献
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微波双栅FET混频器的分析与设计 总被引:1,自引:1,他引:0
蔡水银 《固体电子学研究与进展》1985,(2)
本文分析了双栅FET的混频机理,给出了双栅FET的三种非线性模型.介绍了采用三端口阻抗条件设计双栅FET混频器的方法.在S、L波段制作的两种双栅FET混频器,噪声系数略高于二极管混频器,而变频增益比二极管混频器高10dB.整机应用结果表明,它具有简化电路、降低成本和对前置中放噪声系数要求不高的优点. 相似文献
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本文根据GaAs MESFET单片行波放大器的原理,研制了一种新型宽带单片混频器.混频电路制在厚为0.1mm,面积为2.7×1.8mm的GaAs基片上,RF和LO分别通过等效特性阻抗为50Ω的G_1线和G_2线进入混频电路,且这两个频率在4个GaAs双栅MESFET(DGFET)中混频.这种MMIC混频器在中频频率为1.0GHz.射频频率在2~12GHz范围内得到约为8.5dB的变频损耗(无中频匹配电路),其平坦度约为±0.6dB.这一结果有助于进一步研究与实现单片宽带微波接收机. 相似文献
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用于直播卫星接收机中的12GHz频段GaAs双栅MESFET单片混频器已经研制成功。为了减小芯片尺寸,缓冲放大器直接连在混频器的中频输出端后面,而不采用中频匹配电路。混频器和缓冲器制作在各自的芯片上,以便能分别测量。混频器芯片尺寸是0.96×12.6mm,缓冲器芯片尺寸是0.96×0.60mm。用于混频器的双栅FET和用于缓冲器的单栅FET都具有间隔紧密的电极结构。栅长和栅宽分别是1μm和320μm。带有缓冲放大器的混频器在11.7~12.2GHz射频频段提供2.9±0.4dB变频增益和12.3±0.3dB单边带(SSB)噪声系数。本振频率是10.8GHz。将一个单片前置放大器、一个镜象抑制滤波器和一个单片中频放大器与混频器连接起来构成低噪声变频器。变频器在上述频段内提供46.8±1.5dB的变频增益和2.8±0.2dB单边带噪声系数。 相似文献
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超低压CMOS混频器比较设计及特性分析 总被引:1,自引:0,他引:1
讨论并设计了基于PMOS衬底驱动技术和CMOS准浮栅技术的两种超低压CMOS混频器电路,并对混频器的特性进行了比较分析。在电源电压为O.8V,本征频率和射频频率分别是20MHz、100MHz和1GHz、2,4GHz的输入正弦信号时,衬底驱动混频器的转换增益为-17.95dB和-8.5dB,三阶输入截止点的值为33.2dB和28.4dB;在0.6V的单电源电压下,输入正弦信号分别为频率为20MHz、100MHz和1GHz、2.4GHz时,准浮栅混频器的转换增益为-14.23dB和-21.8dB,三阶输入截止点的值为35.9dB和34.6dB。仿真结果比较显示,衬底驱动混频器具有更高的转换增益,而准浮栅混频器具有更好的频域特性和低压特性。而且它们在频率较低时的性能更好。 相似文献
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在二次变频低中频结构的DRM/DAB数字广播射频极宽频带(148.5kH~1492MHz)接收机中,为了实现良好的镜像抑制性能,第二次变频采用双正交混频器结构。与单正交结构相比较,双正交型混频器具有更优的镜像抑制性能以及更高的成品率。考虑到宽带以及系统输出信号的信噪比,本文中采用了结合多级多相滤波器的双正交下变频有源混频器,在满足镜像抑制要求的的同时提供一定的增益。经理论分析和实际仿真结果表明,该结构的混频器具有良好的镜像抑制性能,镜像抑制比在DRM模式下IIR〉48dB,DAB模式下IIR〉55dB,而且对正交信号幅度和相位的失配不敏感,能够满足数字广播接收机射频前端的所需指标要求。目前整个芯片正在测试中,最终芯片将在Himalaya公司的接收机上进行整机验证。 相似文献
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采用南京电子器件研究所的 76 mm Ga As的 PHEMT单片技术 ,进行了 1 6 .5~ 2 0 GHz的 PHEMT MMIC的设计与研制。其中 PHEMT器件选用双平面掺杂 Al Ga As/In Ga As/Ga As PHEMT异质结结构 ,0 .5μm栅长的 76 mm Ga As工艺制作。在 MMIC设计中 ,准确的器件模型是设计 Ku波段单片的关键。为了保证单片研制的成功 ,利用 Agilent软件进行了 PHEMT器件模型的提取。模型可直接应用于 HP- EESOF Libra软件中 ,进行线性和非线性分析。PHEMT单片放大器采用三级有耗匹配放大器拓扑 ,输入和输出端口匹配至 50 Ω,CPW形式引… 相似文献
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南京电子器件研究所最近研制出一种低中频的S波段单片PHEMT混频器,具有电路结构简单、三阶交调优越、噪声性能良好等优点,另外混频器要求的本振功率极低,并且基本无直流功耗。GaAs三端器件作为混频元件,其混频方式一般分为有源混频模式与阻性混频模式两种。本研究采用阻性混频方式,其特点是器件的源漏电压为零,电路仅需要提供一个接近夹断的负栅压,本振信号从概极注入,射频信号从漏极注入,中频信号从漏极经滤波电路输出。这种结构最大优点是:(1)低的1/f噪声,对于低中频的混频器,这种结构噪声性能较好;(2)优越的交调特性,当信号功率… 相似文献
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《Microwave and Wireless Components Letters, IEEE》2008,18(8):557-559
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《Microwave Theory and Techniques》1987,35(7):643-652
A general and efficient nonlinear/linear analysis of MESFET gate mixers is presented. In the nonlinear analysis, the Newton-Raphson algorithm is used in conjunction with a novel approach for computing partial derivatives required by the Jacobian.The study of conversion gain and stability characteristics of the mixer is based on S-parameter matrix theory. As a result of the analysis, the possibility of improving the conversion gain of X-band MESFET gate mixers by an appropriate choice of the RF drain termination has been theoretically and experimentally demonstrated. 相似文献
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An D. Bok-Hyung Lee Byeong-Ok Lim Mun-Kyo Lee Sung-Chan Kim Jung-Hun Oh Kim S.-D. Hyung-Moo Park Dong-Hoon Shin Jin-Koo Rhee 《Electron Device Letters, IEEE》2005,26(10):707-709
We report high switching performance of 0.1-/spl mu/m metamorphic high-electron mobility transistors (HEMTs) for microwave/millimeter-wave monolithic integrated circuit (MMIC) resistive mixer applications. Very low source/drain resistances and gate capacitances, which are 56 and 31% lower than those of conventional pseudomorphic HEMTs, are due to the optimized epitaxial and device structure. Based on these high-performance metamorphic HEMTs, a 94-GHz MMIC resistive mixer was designed and fabricated, and a very low conversion loss of 8.2 dB at a local oscillator power of 7 dBm was obtained. This is the best performing W-band resistive field-effect transistor mixer in terms of conversion loss utilizing GaAs-based HEMTs reported to date. 相似文献
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A design technique for MESFET mixers is described. This technique is based on a mixer analysis program (MIXAN) designed to obtain the value of conversion gain and evaluate the influence of the embedding impedances for any local oscillator power and DC bias, in order to optimized the mixer performance. The MIXAN program, which uses SPICE as a subroutine to determine large-signal current and voltage waveforms, is able to obtain the operating conditions for maximum conversion gain. The good agreement between experimental and simulation results for X -band drain and gate mixers proves the validity of the design technique 相似文献
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《Microwave and Wireless Components Letters, IEEE》2009,19(8):521-523
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Bosen Tzeng Chun-Hsien Lien Huei Wang Yu-Chi Wang Pane-Chane Chao Chung-Hsu Chen 《Microwave Theory and Techniques》2002,50(11):2564-2568
An InGaP-GaAs heterojunction bipolar transistor (HBT) analog multiplier/mixer monolithic microwave integrated circuit (MMIC) is developed that adopts a Gilbert-cell multiplier with broad-band input-matching networks to widen the bandwidth up to 17 GHz. This MMIC was fabricated using a commercially available 6-in InGaP-GaAs HBT MMIC process. It achieved a measured sensitivity of above 1100 V/W for an analog multiplier and a conversion gain of better than 9 dB for a mixer. It also demonstrated a lower corner frequency and noise than that of an InP HBT analog multiplier. The measured low-frequency noise was 10 nV/sqrt(Hz), which is about half of that of an InP HBT analog multiplier with a similar architecture. The corner frequency of the low-frequency noise was roughly estimated to be 15 kHz. The measured performance of this MMIC chip with gain-bandwidth-product (GBP) of 47 GHz rivals that of the reported GaAs-based analog multipliers and mixers. The high GBP result achieved by this chip is attributed to the HBT device performance and the broad-band input-matching network. 相似文献
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《Electron Device Letters, IEEE》2009,30(3):206-208
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Yuh-Jing Hwang Huei Wang Tah-Hsiung Chu 《Microwave and Wireless Components Letters, IEEE》2004,14(7):313-315
A W-band high electron mobility transistor (HEMT) subharmonically pumped (SHP) gate mixer is designed with fixed LO frequency operation. it is fabricated on a 4-mil substrate using 0.15-/spl mu/m GaAs pHEMT monolithic microwave integrated circuit (MMIC) process. the on-wafer measurement results show that the best conversion loss is about 4.7 dB in the W-band, as a 11-dbm 42-GHz low observable (LO) signal is pumped. To our knowledge, this is the first result on low conversion-loss W-band MMIC SHP HEMT gate mixer. 相似文献
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Ming-Da Tsai Chin-Shen Lin Chun-Hsien Lien Huei Wang 《Microwave Theory and Techniques》2005,53(2):496-505
Using the concept of loss compensation, novel broad-band monolithic microwave integrated circuits (MMICs), including an amplifier and an analog multiplier/mixer, with LC ladder matching networks in a commercial 0.35-mum SiGe BiCMOS technology are demonstrated for the first time. An HBT two-stage cascade single-stage distributed amplifier (2-CSSDA) using the modified loss-compensation technique is presented. It demonstrates a small-signal gain of better than 15 dB from dc to 28 GHz (gain-bandwidth product=157 GHz) with a low power consumption of 48 mW and a miniature chip size of 0.63 mm2 including testing pads. The gain-bandwidth product of the modified loss-compensated CSSDA is improved approximately 68% compared with the conventional attenuation-compensation technique. The wide-band amplifier achieves a high gain-bandwidth product with the lowest power consumption and smallest chip size. The broad-band mixer designed using a Gilbert cell with the modified loss-compensation technique achieves a measured power conversion gain of 19 dB with a 3-dB bandwidth from 0.1 to 23 GHz, which is the highest gain-bandwidth product of operation among previously reported MMIC mixers. As an analog multiplier, the measured sensitivity is better than 3000 V/W from 0.1 to 25 GHz, and the measured low-frequency noise floor and corner frequency can be estimated to be 20 nV/sqrt(Hz) and 1.2 kHz, respectively. The mixer performance represents state-of-the-art result of the MMIC broad-band mixers using commercial silicon-based technologies 相似文献