Temperature elevated N ion implantation of Ti6Al4V alloys using the plasma source

Specimens of Ti6Al4V alloy were implanted with nitrogen ions of 4× 1018 cm-2 at temperatures from 100 to 600℃. Auger Electron Spectroscopy (AES), microhardness measurements and pin-on-disk wear testing, Scanning Electron Mi croscopy (SEM), and Glancing angle X-ray Diffraction (XRD) were utilized to evaluate the surface property improvements. The thickness of implanted layers increased by about an order of magnitude when the temperature was elevated from 100 to 600℃. Higher surface hardness and wear resistance were also obtained in the high tempera ture implantation. The XRD image showed the presence of nitrides of titanium at the implanted surface.     

A study of temperature effect on Ta+N ion-implanted hardalloy

1. IntroductionIon implantation being an effective technology forsurface modification has brought about Notable effects on the surfaCe hardness, wearability and corrosion resistance Of materials [1, 2l. However, themajor limitation to its wide use in industry i8 thatthe modlfied layer is very shallow, and llot suitableto many industrial aPplicatlons. Althougb the modi-fied l8y6r can be imProved by increasing the imPlant-ing energy, yet over-ranged X-ray 1nduced would beharmful to human heal…     

离子注入Cr、Y、Nb对γ-TiAl金属间化合物高温氧化性能的影响

采用MEVVA离子源将Cr、Y、Nb离子分别注入γ -TiAl金属间化合物 ,注入能量 50—6 0keV ,注入剂量为 1× 10 17cm- 2 ,研究γ -TiAl在 10 0 0℃空气中的循环氧化行为。结果表明 ,Cr离子和Y离子注入对γ -TiAl的高温氧化性能均没有明显影响 ;Nb离子注入γ -TiAl,在氧化初期 ,抗氧化性能得到显著提高 ,但随着氧化过程的继续 (超过 10 0h) ,这种改善作用逐渐降低。实验发现 ,通过离子注入和基体合金化向γ -TiAl中加入相同元素 ,由于工艺过程的差异 ,对其高温氧化性能的影响不同。在长时间高温氧化 (10 0 0℃ )条件下 ,离子注入表面改性无法达到提高γ -TiAl抗氧化性能的目的     

X-ray diffraction analysis of nitrogen implanted surface layers of iron and steel

Studies of nitrogen formation in four iron alloys after room temperature N⁺ implantation are carried out by using an X-ray diffractometer. Measures are taken to improve the effectiveness of the X-ray method when applied to a thin surface layer. The method is convenient and straightforward.All equilibrium nitrides are observed in the implanted layer. It is shown that with increasing fluences the nitrides appear in the order of γ', ϵ and ξ. Their relative amounts undergo changes upon annealing. These observations are in accordance with the trend towards equilibrium.Diffraction peaks of the nitrides reduce their intensity as the surface layer is gradually worn away in a wearing test. However, the wear resistance of the implanted layer appears unchanged even long after disappearance of the peaks of nitrides.     

ATF用ODS-FeCrAl管材的耐腐蚀性能研究

针对尺寸为Φ9.5 mm×0.3 mm的氧化物弥散强化（ODS）-FeCrAl管材在360℃/18.6 MPa/100 d静态水溶液、360℃/18.6 MPa/1200 ppm B+2.2 ppm Li/100 d（1 ppm=10?6）动态水溶液、1200℃/0.1 MPa/8 h水蒸气中的腐蚀行为进行研究,利用扫描电镜（SEM）、X射线光电子能谱（XPS）和X射线衍射（XRD）等检测方法,分析管材表面氧化膜形貌、组织结构和元素分布。结果表明,360 ℃水溶液中极低的氧浓度使得ODS-FeCrAl管材在静态和动态水溶液的腐蚀产物主要是Fe₃O₄,质量增重分别为0.036 mg/cm2和0.36 mg/cm2,氧化膜厚度分别为管壁厚度的0.072%和0.72%;1200℃水蒸气腐蚀时,高温和充足的氧含量促使管材表面生成平均厚度为2.34 μm的α-Al₂O₃膜,延缓基体进一步氧化;腐蚀后的氧化膜表面和截面未发现开裂、孔洞等缺陷。与Zr-4管材参比试样相比,ODS-FeCrAl管材表现出优异的高温抗氧化、抗腐蚀性能。      

Cu离子和Al离子注入M2钢表面改性研究

报道了M2型高速工具钢在Cu,Al离子注入后表面硬度及抗磨损性的变化。对注入样品进行了显微硬度及抗磨损性的测量和XRD与RBS分析,观察了表面强化与离子注入条件之间的关系。结果显示,注入样品与未注入样品相比,表面硬度及抗磨损性均有显著提高。分析结果表明,Cu,Al离子注入后样品中产生了不同的相,它们对表面强化所起的作用不同。     

Mechanical properties and microstructure of helium-implanted beryllium

0.2 mm thick specimens of beryllium have been homogeneously implanted with helium. Implantation temperatures ranged from 100 to 600 °C, and final helium concentrations from 30 to 800 appm. Tensile tests at temperatures between 20 and 600 °C were carried out with testing temperature both equal to and lower than the implantation temperatures. For practicality all conditions of helium-implanted specimens, ductility decreased and yield and ultimate tensile strength increased as compared to the unimplanted specimens. The amount of embrittlement and strengthening, however, depended sensitively on implantation dose, implantation temperature, and tensile test temperature. The formation of helium bubbles, dislocation loops, and dislocation networks and the fracture modes were observed by transmission and scanning electron microscopy, respectively. Two ranges of embrittlement can be distinguished. They are attributed to different mechanisms: matrix strengthening is the dominant mechanism at low temperatures, and loss of grain boundary cohesion at high temperatures. It is concluded that in both temperature regimes the embrittlement is dominated by helium and not by the displacement defects introduced by its implantation.     

Surface decomposition and annealing behavior of GaN implanted with Eu

Investigations on surface decomposition of GaN implanted with low energy (80keV) Eu ion to a low dose (1×1014cm-2), and its annealing behavior under high temperature (1050℃) in N2 are performed. The as-grown, as-implanted and annealed GaN films are characterized by proton elastic scattering (PES), Rutherford backscattering spectrometry (RBS), photoluminescence (PL) and atomic force microscopy (AFM). The results show that Eu ion implantation induces radiation defects and decomposition of GaN. The GaN surface decomposition is more serious during high temperature annealing. The atomic ratio of N in as-grown, as-implanted and annealed GaN film is 47 at.%, 44 at.% and 40 at.%, respectively. As a result, a rough Ga-rich layer is formed at the surface, though the lattice defects are partly removed after high temperature annealing.     

Surface regrowth of Sb ion implanted Si(100)

Thermal regrowth of a Si(100) surface, damaged by 80 keV Sb implantation, was monitored by angular resolved photoemission (ARUPS), Rutherford backscattering (RBS) and channelling. It was found that regrowth in UHV at 650°C does not result in a well ordered surface. Annealing at higher temperatures (700–1100°C) results in densities of surface defects of (2.5 ± 0.4) × 10¹⁵ at./cm². A well ordered Si(100)2 × 1 reconstructed surface can be formed only after removal of a 10 nm thick layer by Ne ion bombardment, and heat treatment at 600°C. These observations can be explained by the formation of a surface layer with misoriented domains simultaneously with the solid phase epitaxy.     

Ta离子注入Ti6Al4V合金的抗腐蚀性能

用注量为1.2×1016、3×1016、1.5×1017、3×1017、4.5×1017/cm2的Ta离子对Ti6Al4V合金进行表面改性,加速电压为146.5 keV。Ta离子注入后,用动电位极化曲线研究其抗Hank’s溶液腐蚀性能,用小角掠射X射线衍射研究其表面物相结构,用X射线光电子能谱分析其腐蚀样品的表面元素化合态。结果表明,Ta离子注入改善了Ti6Al4V合金抗Hank’s溶液腐蚀性能,但试样的腐蚀电流密度并非随Ta离子注量增加而单调减小,试样表面合金层、单质Ta和氧化物,共同形成腐蚀阻挡层,提高其抗腐蚀性能。     

离子注入提高高速钢W18Cr4V的耐磨性

1979年英国的N.E.W.Hartley采用注入CO~+的方式注碳,经CO~+注入的工具插件 (4Ni1Cr)和拉丝模(WC—6％CO),获得了磨损降低、寿命延长的好效果。1976年英国的I·H·Willson和1978年苏联的I.M.Belii曾分别报道用N~+注入Ti膜成功地合成了TiN,并对其电性能进行了系统研究。1981年中国台湾的P.A.Chen和T.T.Yang也用N~+轰击沉积在Si片上的1200A厚的Ti膜,成功地合成了化合物TiN,并用RBS和X-ray衍射对合成的化合物进行了鉴定。本实验采用CO~+注入高速钢,N~+注入高速钢表面镀Ti样品,与常规的N~+注入及空白样品进行对比,对注入后表面硬度和耐磨性的变化、注入层的成份、组织结构等进行了研究。实验结果表明,这两种注入工艺获得了比N~+注入更佳的效果。     

低束流钕离子注入外延硅薄层的结构研究

采用金属蒸气真空弧(MEWA)离子源以低束流方式将Nd离子注入到外延硅片中，经高温快速退火处理，制备了结晶良好的钕硅掺杂层。用扫描电子显微镜(SEM)、反射式高能电子衍射(RHEED)和X射线衍射(XRD)分析了在不同退火条件下样品注入层相结构的变化。研究结果表明，经高温热处理，注入层形成结晶良好的钕硅化合物，出现由Nd5Si4相向NdSi相转变的趋势。并对其转变过程进行了初步探讨。     

Surface exfoliation and defect structures in Si induced by 160 keV He and 110 keV H ion implantation

Cz n-type Si(100) wafers were implanted at room temperature with 160 keV He ions at a fluence of 5 × 10¹⁶/cm² and 110 keV H ions at a fluence of 1 × 10¹⁶/cm², singly or in combination. Surface phenomena and defect microstructures have been studied by various techniques, including scanning electron microscopy (SEM), atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). Surface exfoliation and flaking phenomena were only observed on silicon by successive implantation of He and H ions after subsequent annealing at temperatures above 400 °C. The surface phenomena show strong dependence on the thermal budget. At annealing temperatures ranging from 500 to 700 °C, craters with size of about 10 μm were produced throughout the silicon surface. As increasing temperature to 800 °C, most of the implanted layer was sheared, leaving structures like islands on the surface. AFM observations have demonstrated that the implanted layer is mainly transfered at the depth around 960 nm, which is quite consistent with the range of the ions. XTEM observations have revealed that the additional low fluence H ion implantation could significantly influence thermal growth of He-cavities, which gives rise to a monolayer of cavities surrounded by a large amount of dislocations and strain. The surface exfoliation effects have been tentatively interpreted in combination of AFM and XTEM results.     

The production of non linear damage under molecular ion implantation

Germanium atomic (Ge₁) and molecular ions (Ge₂) of equivalent energy are implanted in silicon at an elevated temperature. The ion induced damage has been characterized by RBS channeling (RBS/C) and positron annihilation spectroscopy. The RBS/C studies indicate that the molecular ion implantation has produced more defects in the near surface regions compared to the atomic ion implantation. This paper reports a first time observation of an enhanced production of vacancy related defects in silicon implanted with molecular ions.     

Experimental Study on Material Surface Modification of Tool Steel

This paper presents the surface temperature behavior of M42 high-speed tool steel samples during N^ implantation in an industrialized GLZ-100 metal-ion implantation machine.A detail study has been made on the parameters of N^ implantation.Optimized technical parameters have been preseted.The microhardness of the sample surface implanted under these parameters has been increased by a factor of 2.3.and the wear-resistance has been improved by about 5.4 times.The research on the mechanism of surface modification of M42 steel by nitrogen ion implantation has also been made.     

Temperature and dose dependences of nitrogen implantation into aluminium

It has been established that nitrogen implantation into metals can alter their surface properties such as friction, wear, corrosion, etc. Recent studies have shown that nitrogen implantation into aluminium leads to the formation of aluminium nitride which has interesting tribological, electronic and optical properties. For a given implantation energy, the characteristics of the nitrogen profile, e.g. thickness, shape and concentration, depend strongly on the experimental conditions during the implantation. In order to study the influence of the implantation parameters, aluminium samples have been bombarded with ¹⁵N⁺₂ of 100 keV to different doses ((1–20) × 10¹⁷ N⁺/cm²), at several temperatures (25–300° C). Distributions of the implanted species were investigated by nuclear reaction analysis (NRA) and by Rutherford backscattering spectroscopy (RBS). The chemical bonds of aluminium in the matrix were studied by using low-energy electron-induced X-ray spectroscopy (LEEIXS). It is shown that aluminium nitride is formed and that the nitrogen distribution presents a surface peak when the implantation temperature is higher than 200° C.     

Effect of annealing on structure and hardness of oxygen-implanted layer on Ti6Al4V by plasma-based ion implantation

Ti6Al4V was treated by oxygen plasma-based ion implantation at the voltage pulses of −30 and −50 kV with a constant fluency of 0.6 × 10¹⁷ O/cm². After implantation, the annealing in vacuum was applied to the implanted samples to control phase structure of the implanted layer. The higher voltage implantation forms nano-size rutile in the implanted layer, but the subsequent annealing at 600 °C induces the resolution of the previous rutile. Although, the lower voltage implantation does not lead to rutile, the annealing can precipitate anatase and rutile in the implanted layer. The higher voltage implantation results in a higher hardness of the implanted layer. The annealing at 500 °C leads to an apparent increase in hardness of the implanted layer, but the annealing at 600 °C induces a rapid decrease in hardness.     

Comparison of High-Energy He+ and D+ Irradiation Impact on Tungsten Surface in the IR-IECF Device

Polycrystalline tungsten specimens were irradiated in the Iranian Inertial Electrostatic Confinement Fusion device (IR-IECF) by high energy (~100 keV) and high fluency (~10¹⁹ ions/cm²) helium and deuterium plasma to investigate the implantation impact of high energetic ions on tungsten as a candidate for fusion first wall material. Comparison of the exposure by He and D₂ plasma and influence of high temperature (~1,100 °C) implantation of each ion has been examined. Scanning electron microscopy was used to investigate surface morphology changes for various ion fluencies. Results showed the onset of visible surface pores formation especially for helium implanted samples which increased with higher implant fluencies, eventually resulting in a rough and flaky surface structure, unlike deuterium implanted samples on which smoothening of the surface occurred. Microhardness measurements were used to evaluate mechanical properties of implanted tungsten. Each specimen sustained surface hardening after implantation which was observed to increase with greater ion dose. The phase formation and structural evolution were studied by X-ray diffractometry method.     

Ion beam induced nucleation in amorphous GaAs layers during MeV implantation

To investigate the nonlinear dose dependence of the thickness of the recrystallized layer during ion beam induced epitaxial recrystallization at amorphous/crystalline interfaces GaAs samples were irradiated with 1.0 MeV Ar⁺, 1.6 MeV Ar⁺ or 2.5 MeV Kr⁺ ions using a dose rate of 1.4 × 10¹² cm⁻² s⁻¹ at temperatures between 50°C and 180°C. It has been found that the thickness of the recrystallized layer reaches a maximum value at T_max = 90°C and 135°C for the Ar⁺ and Kr⁺ implantations, respectively. This means that the crystallization rate deviates from an Arrhenius dependence due to ion beam induced nucleation and growth within the remaining amorphous layer. The size of the crystallites depends on the implantation dose. This nucleation and growth of the crystallites disturbes and at least blocks the interface movement because the remaining surface layer becomes polycrystalline. Choosing temperatures sufficiently below T_max the thickness of the recrystallized layer increases linearly with the implantation dose indicating that the irradiation temperature is too low for ion induced nucleation.