低温多晶硅薄膜的制备工艺研究

低温多晶硅薄膜是制备高性能薄膜晶体管的首选材料，由其制成的薄膜晶体管由于在平板显示器件驱动中所展现的优越性能而受到广泛关注。本文系统介绍了低温多晶硅薄膜的三种制备方法-金属诱导横向晶化法、准分子激光晶化法和电感耦合等离子体化学气相沉积法的原理和研究进展，比较了它们之间各自的优缺点，最后对该领域的发展前景进行了展望。     

微波等离子体化学气相沉积法制备石墨烯的研究进展

微波等离子体化学气相沉积（MPCVD）法具有低温生长、基底材料选择广泛、容易掺杂等优点,是大面积、高速率、高质量石墨烯制备的首选。首先通过比较制备石墨烯的几种主要CVD方法得出MPCVD法的优势,然后阐述了MPCVD法制备石墨烯的研究,最后介绍了MPCVD法制备的石墨烯的应用并对MPCVD法制备石墨烯的发展趋势进行了展望。     

类金刚石薄膜的气相沉积新型工艺发展

类金刚石薄膜有着与金刚石薄膜相近的优异性能,且其制备条件相对而言比较温和,因此其制备工艺的发展一直得到广大研究者的关注。在各类型制备工艺中,低温气相沉积法由于其制备条件容易实现,生产设备可大规模生产化而得到了广泛的应用。简述了传统制备类金刚石薄膜的低温工艺,重点介绍了现阶段微波电子回旋等离子体沉积和真空磁过滤弧沉积等新型工艺发展现状。     

等离子体法制备导电炭黑的过程与装备研究进展

综述了热等离子体工艺与低温等离子体工艺制备炭黑的发展历程,认为热等离子体裂解甲烷制备导电炭黑具有转化率高、产物结构好等优势,但高温导致的设备负担,及电极损耗问题亟待解决;而低温等离子体制备导电炭黑亦有反应体系温度低,能耗下降等优势,但缺陷是转化率不高,积碳现象严重。这两种工艺虽有待完善,但各方面均胜于燃烧式工艺。等离子体法裂解甲烷不仅可以制备多种碳纳米材料,还能得到氢气、乙炔等珍贵的化工原料。我国天然气资源丰富,该工艺潜力巨大,有待大力发展。     

石墨烯制备技术有突破

近日，中国科学院合肥物质科学研究院等离子体所低温等离子体应用研究室博士王奇等人，采用低温等离子体技术，成功制备出分散性良好的石墨烯铂纳米复合材料。相关成果已发表在应用物理领域的顶级期刊《应用物理快报》上。据称，这种方法快速、便捷，避免了使用化学还原剂，     

在低基片温度下制备的ITO透明导电膜的性能

发展了使用直流辉光放电等离子体辅助反应蒸发法在低温玻璃基片上制备ＩＴＯ膜的工艺，研究了主要的工艺参数，如Ｓｎ／Ｉｎ配比，氧分压，基片温度等对于膜的透光率和电阻的效应。     

电弧等离子体法在纳米材料制备中的应用

电弧等离子体法可广泛用于多种纳米粉末、纳米管及纳米薄膜的制备。介绍了电弧等离子体法制备纳米材料的基本工作原理及其在制备各种纳米材料的应用，分析了电弧等离子体法的特点与优势，并展望了其发展前景。     

低温多晶硅薄膜的制备评述

低温多晶硅薄膜晶体管(LTPS-TFT)驱动技术是实现大尺寸全彩平板显示的必由之路.然而,传统的低温多晶硅薄膜制作工艺存在着工序复杂、薄膜均匀性差、可能有金属污染且造价昂贵等问题.因此,有必要研发新一代的低温多晶硅薄膜制备工艺以期进一步提高薄膜质量,降低驱动成本.本文首先介绍了金属诱导横向晶化法(MILC)和准分子激光晶化法(ELA)制备低温多晶硅薄膜的原理,分析了两者各自的优缺点.接着,重点阐述了电感耦合等离子体化学气相沉积法(ICP-CVD)的工作原理和特点,并介绍了目前ICP-CVD在低温多晶硅薄膜制备上所取得的进展.     

低温等离子体技术在金属防护中的应用

低温等离子体技术作为一种涂层制备和表面改性的方法在金属防护中有着广泛的应用。对不同低温等离子体工艺,包括等离子体热喷涂、等离子体化学气相沉积、离子渗氮、双辉光离子渗金属、等离子体微弧氧化等在金属防护中的应用、研究进展以及存在的问题进行了综述。     

等离子体诱导铜油墨低温固化工艺及性能优化

目的 利用低温等离子体诱导铜络合物导电油墨实现在柔性基板上快速固化,制备出高导电柔性铜薄膜,并阐明油墨溶剂质量分数、预热处理时间、等离子体功率、处理时间等参数对铜膜固化结构与导电特性的影响规律。方法 通过调节油墨中的溶剂质量分数以改变油墨的铜含量及印刷铜薄膜的厚度;通过控制变量法优化低温固化工艺,并利用扫描电子显微镜、共聚焦显微镜、电阻率测量等手段表征柔性薄膜的物理特性;通过圆珠笔直写和卷对卷印刷方式测试所制备油墨与工艺在印刷柔性电子领域的适用性。结果 通过对油墨配方和等离子体处理工艺的协同优化,可以制备最薄为40 nm,最低电阻率为3.76 μΩ?cm的柔性铜薄膜。结论 等离子体处理可以实现铜络合物油墨的低温快速固化制备高性能铜薄膜,在印刷柔性电子领域展现出了巨大的应用潜力。     

Hydrogen induced microstructural variation in diamond and diamond like carbon thin films

Hydrogen plays a crucial role in the growth of micro-crystalline diamond (MCD) and diamond like carbon (DLC) thin films grown by plasma assisted chemical vapour deposition (PACVD) processes. It selectively etches graphite phase and helps in stabilizing the diamond phase. The presence of various hydrocarbon species in the plasma and their reaction with atomic, excited or molecular hydrogen on the substrate surface decide the mechanism of diamond nucleation and growth. Several mechanisms have been proposed but the process is still not well understood. Control of hydrogen and other deposition parameters in the PACVD process leads to deposition of yet another class of materials called diamond like carbon. By varying the concentration of hydrogen it is possible to produce purely amorphous carbon films on the one hand and amorphous hydrogenated carbon films (with as high as 60% hydrogen) on the other. Very hard, optically transparent and electrically insulating films characterize the diamond like behaviour. The proportion of hydrogen and its bonding with carbon or hydrogen in the film can be varied to obtain very hard to very soft films which could be optically transparent or opaque. The microstructure of these films have been investigated by a large number of techniques. The results show interesting situations. This paper reviews the work on the role of hydrogen on the growth, structure and properties of MCD and DLC thin films.     

金刚石膜在多孔硅发光中的应用

采用微波等离子体化学气相沉积（MPCVD）法成功地在多孔硅上沉积出均匀、致密的金刚石膜。光致发光测量表明,金刚石膜可以有效稳定多孔硅的发光波长和发光强度,具有明显的钝化效应。金刚石膜的这个特点再加上高硬度特性使金刚石膜成为多孔硅的一种潜在的钝化膜。     

水冷反应室式MWPCVD制备金刚石膜装置研制

微波等离子体化学气相沉积(MWPCVD)是制备金刚石膜的一种重要方法.为了获得金刚石膜的高速率大面积沉积,研制成功了水冷反应室式MWPCVD制备金刚石膜的装置.装置在微波输入功率为3.0 kW时能长时间稳定运行,并在硅衬底上沉积出金刚石膜.     

系统压强对微波等离子体化学气相沉积金刚石成核的影响

为了在氧化铝上制备（100）定向织构的金刚石薄膜,必须先提高金刚石的成核密度,在微波等离子体化学气相沉积（MPCVD）系统中,采用低压成核的方法,在氧化铝陶瓷上沉积出高成核密度的金刚石薄膜,扫描电镜显示其成核密度可达10^8cm^-2。在此基础上,沉积出（100）织构的金刚石薄膜。     

Growth of polycrystalline and nanocrystalline diamond films on pure titanium by microwave plasma assisted CVD process

Well-faceted polycrystalline diamond (PCD) films were deposited along with nanocrystalline diamond (NCD) films on the pure titanium substrate by a microwave plasma assisted chemical vapor deposition (MWPCVD) system in the environment of CH₄ and H₂ gases at a moderate temperature. Diamond film deposition on pure titanium and Ti alloys is always extremely hard due to the high diffusion coefficient of carbon in Ti, the big mismatch in their thermal expansion coefficients, the complex nature of the interlayer formed during diamond deposition, and the difficulty of attaining very high nucleation density. A well-faceted PCD film and a smooth NCD film were successfully deposited on pure Ti substrate by using a simple two-step deposition technique. Both films adhered well. Detailed experimental results on the preparation, characterization and successful deposition of the diamond coatings on pure Ti are discussed. Lastly, it is shown that smooth NCD film can be deposited at moderate temperature with sufficient diamond quality for mechanical and tribological applications.     

MPCVD制备金刚石膜的形核与生长过程

简要介绍了金刚石膜的物理化学特性及应用领域。对比分析了主要化学气相沉积方法的优缺点,并指出MPCVD所面临的技术瓶颈。总结了反应腔体内压强、基片温度、基体材料及增强形核技术对金刚石膜形核过程的影响。较低腔体内压力、基片温度,高碳源浓度及等离子体预处理能有效提高形核密度。阐述了各过程参数对金刚石膜生长的影响和微米、纳米、超纳米金刚石膜的技术特点及应用。指出各类金刚石膜制备所面临的技术难题,并综述了解决该技术瓶颈的最新研究工作。     

热阴极辉光放电对金刚石膜沉积的影响

研究了在热阴极辉光放电等离子体化学气相沉积金刚石膜过程中，热阴极辉光放电特性与金刚石膜沉积工艺的关系．结果表明，适当的阴极温度是保证大电流、高气压辉光放电的必要条件．阴极的温度影响辉光放电阴极位降区的放电性质．金刚石膜的沉积速率随着气体压力(16～20kPa)的升高而上升，在18.6kPa左右出现最高值，而阳极位降区电场强度的降低使膜品质下降．放电电流(8～12A)对沉积速率的影响与气体压力的影响具有相似的规律．     

微波等离子体化学气相沉积技术制备金刚石薄膜的研究

介绍了微波等离子体化学气相沉积法（MPCVD）制备金刚石薄膜的研究情况，重点论述了该法的制备工艺对金刚石薄膜质量的影响及其制备金刚石薄膜的应用前景。     

Processing and Mechanism of Dynamic Friction Polishing Diamond Using Manganese-Based Alloy

Chemical vapor deposition (CVD) diamond film has high heat resistance, high thermal stability, and other excellent properties as nature single-crystalline diamond. The surface polishing, large size planarization, and high material removal rate of CVD diamond film are limited due to its special crystal structure and excellent physicochemical characteristics. Dynamic friction polishing (DFP) technology is a new and effective polishing method of diamond. In this paper, according to the theory of graphitization of diamond catalyzed by unpaired d electrons, two manganese-based alloys, Mn–Cu and Mn–Ni, are selected as polishing materials to achieve high quality and high efficiency polishing of diamond and verify the mechanism of DFP. Alloying polishing plates were prepared by mechanical alloying method and spark plasma sintering technology. The polishing results of Mn–Cu and Mn–Ni alloys were compared and analyzed through DFP experiments. The experimental results showed that since Mn–Ni alloy has more unpaired d electrons than Mn–Cu alloy, Mn–Ni alloy was more likely to form vacant rails and showed a higher material removal rate of CVD diamond film. The addition of Cu decreased the wear of polishing plate with the help of its lubrication action.     

WC-Co硬质合金基体上高附着力金刚石薄膜的制备

采用微波等离子体化学气相沉积(CVD)法在WC-Co硬质合金基体上制备金刚石膜, 研究了TiN_x中间层的引入对金刚石薄膜质量及其附着性能的影响. 结果表明, 在酸浸蚀脱钴处理的基础上, 通过预沉积氮含量呈梯度变化的TiN_x中间过渡层, 可在硬质合金基体上制备出高质量的金刚石薄膜; 压痕法测试其临界载荷达1000N.