Effect of B2O3 and CuO on the sintering temperature and microwave dielectric properties of the BaTi4O9 ceramics

The effect of B₂O₃ and CuO on the sintering temperature and microwave dielectric properties of BaTi₄O₉ ceramics was investigated. The BaTi₄O₉ ceramics were able to be sintered at 975^∘C when B₂O₃ was added. This decrease in the sintering temperature of the BaTi₄O₉ ceramics upon the addition of B₂O₃ is attributed to the formation of BaB₂O₄ second phase whose melting temperature is around 900^∘C. The B₂O₃ added BaTi₄O₉ ceramics alone were not sintered below 975^∘C, but were sintered at 875^∘C when CuO was added. The formation of BaCu(B₂O₅) second phase could be responsible for the decrease in the sintering temperature of the CuO and B₂O₃ added BaTi₄O₉ ceramics. The BaTi₄O₉ ceramics containing 2.0 mol% B₂O₃ and 5.0 mol% CuO sintered at 900^∘C for 2 h have good microwave dielectric properties of ε_r = 36.3, Q× f = 30,500 GHz and τ_f = 28.1 ppm/^∘C     

Effects of Al2O3 on the piezoelectric properties of Pb(Mn1/3Nb2/3)O3-PbZrO3-PbTiO3 ceramics

Piezoelectric properties of Al₂O₃-doped Pb(Mn_1/3Nb_2/3)O₃-PbZrO₃-PbTiO₃ ceramics were investigated. The constituent phases, microstructure, electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants were analyzed. Diffraction peaks for (002) and (200) planes were identified by X-ray diffractometer for all the specimens doped with Al₂O₃. The highest sintered density of 7.8 g/cm³ was obtained for 0.2 wt% Al₂O₃-doped specimen. Grain size increased by doping Al₂O₃ up to 0.3 wt%, and it decreased by more doping. Electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants increased by doping Al₂O₃ up to 0.2 wt%, and it decreased by more doping. This might result from the formation of oxygen vacancies due to defects in O^{2 −} ion sites and the substitution of Al³⁺ ions.     

Thermoelectric properties of Bi and Cu co-doped Ca3Co2O6single crystals

Single crystals of Bi and Cu-doped Ca₃Co₂O₆were synthesized in a molten K₂CO₃flux. Using an obtained single crystal of (Ca_0.985(5)Bi_0.015(5))₃(Co_0.990(3)Cu_0.010(3))₂O₆elongated to the c-axis direction of the crystal structure, the electric resistivity (ρ) and Seebeck coefficient (S) were measured from room temperature to over 1000 K in air. The single crystal showed p-type semiconducting behavior with ρ values of 1.8 Ω cm at 303 K and 0.017 Ω cm at 1000 K. The S values were +254 μ VK^{− 1} at 325 K, +360 μ VK^{− 1} at 420 K, and +214 μ VK^{− 1} at 1000 K. The power factor (S ² ρ ^{− 1}) increased with an increase of temperature and attained 2.70 × 10^{− 4} Wm^{− 1}K^{− 2} at 1000 K.     

Thermal and dielectric properties of ZnO-B2O3-MO3glasses (M = W, Mo)

Glasses in the ZnO-B₂O₃-MO₃(M = W, Mo) ternary were examined as potential replacements to PbO-B₂O₃-SiO₂-ZnO glass frits with the low firing temperature (500–600^∘C) for the dielectric layer of a plasma display panels (PDPs). Glasses were melted in air at 950–1150^∘C in a narrow region of the ternary using standard reagent grade materials. The glasses were evaluated for glass transition temperature (T _g ), softening temperature (T _d ), the coefficient of thermal expansion (CTE), dielectric constant (ε _r ), and optical property. The glass transition temperature of the glasses varied between 470 and 560^∘C. The coefficient of thermal expansion and the dielectric constant of the glasses were in the range of 5–8 × 10^{− 6}/^∘C and 8–10, respectively. The addition of MO₃to ZnO-B₂O₃binary could induce the expansion of glass forming region, the reduction of T _g and the increase in the CTE and the dielectric constant of the glasses. Also, the effect of the addition of MO₃to ZnO-B₂O₃binary on the transmittance in the visible-light region (350–700 nm) was investigated.     

Preparation and characterization of LiNi0.80Co0.20– x Al x O2 as cathode materials for lithium ion batteries

LiNi_0.80Co_{0.20− x} Al _x O₂ samples (x = 0.025, 0.050 and 0.100) were prepared by a solid-state reaction at 725^∘C for 24 h from LiOH⋅H₂O, Ni₂O₃, Co₂O₃ and Al(OH)₃ under oxygen flow. LiNiO₂ simultaneously doped by Co-Al has been tried to improve the cathode performance. The results showed that substitution of optimum amount Al and Co at the Ni-site in LiNiO₂ improved cycling performance. As a consequence, LiNi_0.80Co_0.15Al_0.05O₂ has 178.2 mAh/g of the first discharge capacity and 174.0 mAh/g after 10 cycles. Differential capacity vs. voltage curves indicated that the Co-Al co-doped LiNiO₂ showed suppression of the phase transitions compared with pure LiNiO₂.     

Low temperature sintering and microwave dielectric properties of Ba3Ti5Nb6O28 with B2O3 and CuO additions

The low sintering temperature and the good dielectric properties such as high dielectric constant (ε _r ), high quality factor (Q × f), and small temperature coefficient of resonant frequency (TCF) are required for the application of chip passive components in wireless communication low temperature co-fired ceramics (LTCC). In the present study, the sintering behaviors and dielectric properties of Ba₃Ti₅Nb₆O₂₈ ceramics were investigated as a function of B₂O₃-CuO content. The pure Ba₃Ti₅Nb₆O₂₈ system showed a high sintering temperature (1250^∘C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ε _r of 37, TCF of −12 ppm/^∘C. The addition of B₂O₃-CuO was revealed to lower the sintering temperature of Ba₃Ti₅Nb₆O₂₈, 900^∘C and to enhance the microwave dielectric properties: Q × f of 32,500 GHz, ε _r of 40, TCF of 9 ppm/^∘C. From the X-ray photoelectron spectroscopy (XPS) and X-ray powder diffraction (XRD) studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties.     

Electrical properties of BaPb1+x−y Sb y O3 ceramics derived from a modified sol-gel method

BaPbO₃ ceramics has attracted considerable interest due to the promising electrical applications. For the best control of the microstructure and phase, Sb-doped BaPbO₃ ceramics were prepared by a sol-gel route. Inorganic compounds were used as starting chemicals, citric acid and Ethylene diamine tetra-acetic acid (EDTA) as complex chelate agent, and distilled water as solvent. Experimental results demonstrate that the Sb-doped BaPbO₃ ceramics with homogeneous composition could be prepared by the method mentioned above. Influence of Pb/Ba ratio and Sb concentration on the room-temperature resistivity and the PTCR behavior of BaPb_1+x−y Sb _y O₃ (x = 0.0, 0.1, 0.2 and 0 ≤ y ≤ 0.2) compositions was investigated. The PTCR behavior was related to the Pb/Ba ratio and major compensating defect in BaPbO₃. The lowest electrical resistivity of Sb-doped BaPbO₃ was calculated to be 2.69 × 10⁻⁴ Ω·cm when the Sb concentration y = 12–13 mol%. The 0.5 mol% Sb-doped BaPbO₃ showed the best PTCR behavior, and its Curie temperature is about 850 °C.     

Effects of ZnO on the piezoelectric properties of Pb (Mn1/3 Sb 2/3 )O 3 -Pb(Zr,Ti)O 3 Ceramics

Perovskite-types 0.05Pb(Mn_1/3Sb_2/3)O₂-0.95Pb- (Zr_0.5Ti_0.5)O₃ (PMS-PZT) was synthesized by conventional bulk ceramic processing technique. ZnO as a dopant up to 0.5 mol% was incorporated into the PMS-PZT system, and the effects on piezoelectric properties were investigated. Pyrochlore phase was not detected to form during the synthesis of the PMS-PZT system with 0–0.5 mol% ZnO addition. The highest density of 7.92 g/cm³ was obtained when sintered at 1200^∘C for 2 h. Piezoelectric properties as a function of ZnO content were evaluated using a gain phase analyzer. Piezoelectric charge constant (d ₃₁) and piezoelectric voltage output coefficient (g ₃₁) increased up to −130 pC/N and −24.9 × 10³Vm/N, respectively, with increasing ZnO content. Mechanical quality factor (Q _m) was shown to reduce considerably with increasing ZnO content. When 0.3 mol% of ZnO was added into the system, electromechanical coupling factor (k _p) and relative dielectric constant (ε₃₃ ^T /ε_o) reached to the maximum of 56% and 1727, respectively.     

Effect of synthetic conditions on particle size and photo-luminescence properties of Y2O3:Eu3+ nanophosphor

In this paper, effect of synthetic conditions on the particle size, crystal structure, and the photoluminescence properties of the Y₂O₃:Eu³⁺ nanophosphor was investigated. Solvent and dispersing agent were determined as the synthetic parameters. The nanophosphor synthesized from methanol solvent showed the smaller particle size of 4 nm. The XRD analysis indicates that the crystal structure of the Y₂O₃:Eu³⁺ nanophosphor is mainly cubic crystal with orientation of (222), (440), (400), and small peak of (511) indicating monoclinic crystal. The Y₂O₃:Eu³⁺ nanophosphor synthesized by using methanol solvent and 0.1 wt.% hydroxypropyl cellulose (HPC) as a dispersing agent showed higher degree of crystallization of 10.5 of I ₍₂₂₂₎/I ₍₅₁₁₎ ratio than that without HPC. Also, the photoluminescence properties of the nanophosphor showed red color that excitation and emission wavelengths of the nanophosphor were 250 and 611 nm, respectively. Using the 250 nm UV source, the highly intensive photoluminescence peak could be achieved at 611 nm under the synthetic condition of methanol solvent adding 0.1 wt.% HPC.     

Dielectric properties of Pb[(Mg1/3Nb2/3),Ti]O3 with Bi modification

Bi(Mg_2/3Nb_1/3)O₃ was partially substituted into a Pb(Mg_1/3Nb_2/3)O₃⋅PbTiO₃ perovskite system and resultant changes in the phase developments and dielectric properties were investigated. Two major structures of columbite and rutile, along with a small fraction of Mg₄Nb₂O₉ (α-Al₂O₃ structure), were developed in the B-site precursor system, whereas only a perovskite was observable after the addition of PbO and Bi₂O₃. The replacement of Bi for Pb resulted in a great reduction in the maximum dielectric constants as well as a substantial decrease in the dielectric maximum temperatures.     

Electrical Properties of Acceptor Doped BaTiO3

Electrical properties of acceptor (Mn, Mg or Mn+Mg)-doped BaTiO₃ ceramic have been studied in terms of oxygen vacancy concentration, various doping levels and electrical degradation behaviors. The solubility limit of Mn on Ti sites was confirmed to be close to or less than 1.0 mol%. Oxygen vacancy concentration of Ba(Ti_{0.995 –x}Mg_0.005Mn_x)O_{2.995 –y} (x = 0, 0.005, 0.01) was estimated to be 50 times greater than that of the un-doped BaTiO₃. The leakage current of 0.5 mol% Mn-doped BaTiO₃ was stable with time, which was much lower than that of the un-doped BaTiO₃. The BaTiO₃ specimen co-doped with 0.5 mol% Mg and 1.0 mol% Mn showed the lowest leakage current below 10^{– 10}A. It was confirmed that leakage currents of Mg-doped and un-doped BaTiO₃ under dc field are effectively suppressed by Mn co-doping as long as the Mn doping level is greater than Mg contents.     

Defect Chemistry of Y Doped BaTiO3

Defect chemistry of Y doped BaTiO₃ was investigated as a function of the Ba/Ti ratio. When the Ba/Ti ratio was greater than unity, Y^{3 +} was substituted for the normal Ti site and the equilibrium conductivity showed a strong evidence of acceptor-doped behavior. With the Ba/Ti ratio < 1, Y^{3 +} was substituted for the Ba site and the equilibrium conductivity showed donor-doped behavior. In the case excess Y₂O₃ was added to the stoichiometric BaTiO₃(Ba/Ti = 1), the conductivity profile showed a donor-doped behavior at low concentrations (< 1.0 mol%), whereas, at higher donor levels (> 2.0 mol%), the equilibrium conductivity minimum shifted toward lower Po₂, indicating acceptor doped behavior.     

Thermoelectricity of p-Fe2O3-SO3-SiO2-others and n-Fe2O3-SiO2-CuO-others

Thermoelectric minerals have been found at Loei Province, in the northeastern part of Thailand. Local mineral specimens were prepared in the powders and bulk solids form by crushing, calcination and annealing, pressure and sintering, cutting and polishing. Mineral samples were used to analyze the composition and phase, determine the thermoelectric property and efficiency, design and construct a thermoelectric generator. Chemical composition and phase identification of powder samples were analyzed by the x-ray fluorescence (XRF) and x-ray diffraction (XRD), respectively. XRF and XRD results indicated that the mineral samples comprised the SO₃-CaO-SiO₂-others, Fe₂O₃-SO₃-SiO₂-others, Fe₂O₃-SiO₂-others and Fe₂O₃-SiO₂-CuO-others. From the thermoelectric property and efficiency determinations, the p-SO₃-CaO-SiO₂-others, p-Fe₂O₃-SO₃-SiO₂-others, n-Fe₂O₃-SiO₂-others and n-Fe₂O₃-SiO₂-CuO-others bulks were found to exhibit the thermoelectric figure of merit in orders of 10^?14, 10^?11, 10^?14 and 10^?13 K^?1, respectively. A fabricated thermoelectric generator made from ten pairs of p-Fe₂O₃-SO₃-SiO₂-others and n-Fe₂O₃-SiO₂-CuO-others legs that can be provided the open circuit voltage and short circuit current up to 48.30 mV and 0.14 μA for a temperature difference of 39.80 K at room temperature, respectively. While the internal resistance decreased and reached a value of 665 kΩ.     

The effect of alumina addition on the electrical conductivity of Gd-doped ceria

Acceptor doped-ceria is a possible electrolyte material for the IT-SOFC (intermediate temperature solid oxide fuel cell) due to its high oxygen-ion conductivity. However, its use has been limited by its mechanical weakness and the appearance of electronic conductivity in reducing condition. In this study, alumina was selected as an additive in the doped-ceria to see if it increases the oxygen-ion conductivity and mechanical strength. Effects of alumina addition in doped ceria were studied as a function of alumina content and acceptor (Gd) content. The electrical conductivity of (Ce_1−x Gd _x O_2−δ)_1−y + (Al₂O₃) _y (x = 0–0.35, y = 0–0.10) was measured by using impedance spectroscopy. The grain conductivity of Ce_0.8Gd_0.2O_2-δ (GDC20) with 5 mol% alumina increased ∼3 times from that of GDC20 at 300^∘C. The grain conductivity was even ∼2 times higher than that of Ce_0.9Gd_0.1O_2−δ (GDC10) at 300^∘C. The electrical conductivity of GDC20 without alumina addition, measured at 500^∘C in air, rapidly decreased after exposure to reducing condition (Po₂∼10⁻²² atm) at 800^∘C. However, the decrease was much slower in GDC20 with alumina addition, indicating the improved mechanical strength. Among the examined compositions, (Ce_0.75Gd_0.25 O_2-δ)_0.95 + (Al₂O₃)_0.05 (GDC25A5) showed the highest conductivity at most temperatures.     

Low-temperature sintering and electrical properties of (1−x)Pb(Zr0.5Ti0.5)O3-xPb(Cu0.33Nb0.67)O3 ceramics

Electrical properties and sintering behaviors of (1 − x)Pb(Zr_0.5Ti_0.5)O₃-xPb(Cu_0.33Nb_0.67)O₃ ((1 − x)PZT-xPCN, 0.04 ≤ x ≤ 0.32) ceramics were investigated as a function of PCN content and sintering temperature. For the specimens sintered at 1050^∘C for 2 h, a single phase of perovskite structure was obtained up to x = 0.16, and the pyrochlore phase, Pb₂Nb₂O₇ was detected for further substitution. The dielectric constant (ε _r), electromechanical coupling factor (K_p) and the piezoelectric coefficient (d ₃₃) increased up to x = 0.08 and then decreased. These results were due to the coexistence of tetragonal and rhombohedral phases in the composition of x = 0.08. With an increasing of PCN content, Curie temperature (T_c) decreased and the dielectric loss (tanδ) increased. Typically, ε_r of 1636, K_p of 64% and d₃₃ of 473pC/N were obtained for the 0.92PZT-0.08PCN ceramics sintered at 950^∘C for 2 h.     

Structural and Multiferroic Properties of Bi3.4La0.6Ti3O12/CoFe2O4 Composite Thin Films

Bi_3.4La_0.6Ti₃O₁₂ and CoFe₂O₄ were synthesized by chemical solution route, and Bi_3.4La_0.6Ti₃O₁₂/CoFe₂O₄ multilayers were deposited by spin coating on Pt substrate. X-ray diffraction of multilayer structures reveals composite-like polycrystalline film. Leakage current is less than 10^?5 A at electric field < 90 KV/cm and follows the Ohmic behavior. Dielectric response shows relaxation and the loss (tan δ) is below 3% at 10⁶ Hz. Room temperature ferrroelectric polarization (P_r) = 20.2 μC/cm² and ferromagnetic memory (M_r) = 46.5 emu/cm³ has been obtained. Co-existence of FE and FM response can be attributed to stress and different permeability and permittivity involved in multilayer structures.     

Dielectric properties of ZnNb2 O 6 -TiO 2 mixture thin films

ZnNb₂O₆-TiO₂ mixture thin films with multilayer structures were fabricated via a sol-gel spin coating process. TiO₂ layers were deposited on the pre-crystallized ZnNb₂O₆ layers in order to suppress the formation of the ixiolite phase which always forms in the bulk system. The phase constitution of the thin films, confirmed by X-ray diffraction (XRD), could be controlled by the annealing temperatures, which, in turn, influenced the dielectric properties of the thin films. TiO₂ layers crystallized as the anatase phase and then transformed to the rutile phase at temperatures higher than 725^∘C. Dielectric constants of the mixture thin films, measured at 1 MHz with an MIM (metal-insulator-metal) structure, increased from 27 to 41 with dielectric losses below 0.005 as the annealing temperature increased from 700^∘C to 900^∘C. The increase in the dielectric constants was understood to originate from the increasing amounts of the rutile phase. Temperature coefficients of capacitance (TCC) were also measured between 25^∘C and 125^∘C, which showed a decreasing manner from positive values to negative values with increasing annealing temperatures. When annealed at 850^∘C, the TCC of the thin films could be tuned to be approximately 0 ppm/^oC with dielectric constant and dielectric loss of 36 and 0.002, respectively.     

Fabrication of amorphous bulk and multi-phase ceramics by melting method in the HfO2-Al2O3-Gd2O3-Eu2O3system

Ceramics have generally been fabricated from powders by shape forming & sintering methods except for glasses and glass ceramics. Glasses and glass ceramics can be fabricated by melting methods. The melting method has not only higher productivity but also higher shape forming ability than powder processes via forming & sintering methods. Thus we have reinvestigated melting methods in binary and ternary oxides systems to fabricate amorphous bulk ceramics and bulk nano composites. We have successfully fabricated amorphous phases by simple melt solidification methods in ternary eutectic melts in the HfO₂-Al₂O₃-Gd₂O₃system. The present study demonstrates the formation of the amorphous phases in quaternary systems HfO₂-Al₂O₃-Gd₂O₃-Eu₂O₃. Furthermore, we have also succeeded to fabricate nano-structured bulk ceramics, which consisted of constituent oxide grains with 20–100 nm in size, by post annealing of the amorphous phase.     

Control of 0.2CaTiO3-0.8Li0.5Nd0.5TiO3 microwave dielectric ceramics by additions of Bi2Ti2O7

Ceramics of 0.2CaTiO₃-0.8Li_0.5Nd_0.5TiO₃) have been prepared by the mixed oxide route using additions of Bi₂O₃-2TiO₂ (up to 15 wt%). Powders were calcined 1100^∘C; cylindrical specimens were fired at temperatures in the range 1250–1325^∘C. Sintered products were typically 95% dense. The microstructures were dominated by angular grains 1–2 μm in size. With increasing levels of Bi₂O₃-2TiO₂ additions, needle and lath shaped second phases developed. For Bi₂Ti₂O₇ additions up to 5 wt%, the relative permittivity increased from 95 to 131, the product of dielectric Q value and measurement frequency increased from 2150 to 2450 GHz and the temperature coefficient of resonant frequency (τ _f ) increased from −28pp/^∘C to +22pp/^∘C. A product with temperature stable τ _f could be obtained at ∼2 wt% Bi₂Ti₂O₇ additions. For high levels of additives, there is minimal change in relative permittivity, the Qxf values degrade and τ _f becomes increasingly negative.     

Photoluminescence properties of Y2O3co-doped with Eu and Bi compounds as red-emitting phosphor for white LED

Bismuth doped Y₂O₃: Eu was used as a red phosphor with a very high efficiency and an appropriate emission wavelength of around 310–400 nm. This red phosphor was synthesized by the solid state reaction which is normally used in the field of white LEDs. In this study, we synthesized Y₂O₃: Eu, Bi phosphors using a solid state reaction. We investigated the effect of the Eu^{3 +} and Bi^{3 +} concentrations and additive fluxes on the emission characteristics. The fabricated phosphors were investigated by analyzing their particle size and crystal structure with scanning electron microscopy and X-ray diffraction (XRD). Their photoluminescence (PL) spectra were also measured at room temperature.