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本文讨论了制作绝缘体上硅(SOI)结构的外延横向过生长技术(ELO),并通过在SOI结构上制作的nMOS晶体管验证ELO SOI材料质量和器件总剂量加固性能。在SOI结构上制作的nMOS晶体管显示出了好的辐射特性,例如,发现剂量为10~5戈瑞(硅)的辐射诱发变化为,阈值电压漂移=-0.25V,跨导衰减=18%。 相似文献
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抗总剂量辐射0.8μm SOI CMOS器件与专用集成电路 总被引:1,自引:0,他引:1
介绍了采用全剂量SIMOX SOI材料制备的0.8μm SOI CMOS器件的抗总剂量辐射特性,该特性用器件的阈值电压、漏电流和专用集成电路的静态电流与高达500krad(Si)的总剂量的关系来表征.实验结果表明pMOS器件在关态下1Mrad(Si)辐射后最大阈值电压漂移小于320mV,nMOS器件在开态下1Mrad(Si)辐射后最大阈值电压漂移小于120mV,器件在总剂量1Mrad(Si)辐射后没有观察到明显漏电,在总剂量500krad(Si)辐射下专用集成电路的静态电流小于5μA. 相似文献
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介绍了采用全剂量SIMOX SOI材料制备的0.8μm SOI CMOS器件的抗总剂量辐射特性,该特性用器件的阈值电压、漏电流和专用集成电路的静态电流与高达500krad(Si)的总剂量的关系来表征.实验结果表明pMOS器件在关态下1Mrad(Si)辐射后最大阈值电压漂移小于320mV,nMOS器件在开态下1Mrad(Si)辐射后最大阈值电压漂移小于120mV,器件在总剂量1Mrad(Si)辐射后没有观察到明显漏电,在总剂量500krad(Si)辐射下专用集成电路的静态电流小于5μA. 相似文献
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介绍了采用全剂量SIMOX SOI材料制备的0.8μm SOI CMOS器件的抗总剂量辐射特性,该特性用器件的阈值电压、漏电流和专用集成电路的静态电流与高达500krad(Si)的总剂量的关系来表征.实验结果表明pMOS器件在关态下1Mrad(Si)辐射后最大阈值电压漂移小于320mV,nMOS器件在开态下1Mrad(Si)辐射后最大阈值电压漂移小于120mV,器件在总剂量1Mrad(Si)辐射后没有观察到明显漏电,在总剂量500krad(Si)辐射下专用集成电路的静态电流小于5pA. 相似文献
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A new SOI/bulk hybrid technology with devices on both the thin film and the bottom substrate of SIMOX wafers has been studied. By fabricating ESD protection circuits on the substrate of SIMOX wafers, ESD reliability of high performance CMOS SOI circuits can be significantly improved. Despite the higher surface defect density and micro-roughness on the bottom substrate of SIMOX wafers compared to ordinary bulk wafers, similar electron mobility, intrinsic thermal oxide properties and hot-carrier degradation are observed among MOSFET's fabricated on the different substrates. Thus, the hybrid technology is capable of combining the advantages both of SOI and bulk technology in fabricating high performance circuits 相似文献
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SIMOX技术是最具有发展前途的SOI技术之一。在发展薄硅层、深亚微米OMOS/SOI集成电路中,SIMOX技术占有极其重要的地位。本文综述了SIMOX基片的形成、高质量SIMOX基片的制备方法。阐述了薄硅层OMOS/SIMOX器件的工艺特点以及器件的性能特点。本文也就SIMOX技术及GMOS/SIMOX器件的研究现状及发展趋势进行了讨论。 相似文献
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Substrate crosstalk reduction using SOI technology 总被引:4,自引:0,他引:4
Raskin J.-P. Viviani A. Flandre D. Colinge J.-P. 《Electron Devices, IEEE Transactions on》1997,44(12):2252-2261
This work analyzes both by simulations and measurements the substrate crosstalk performances of various Silicon-On-Insulator (SOI) technologies, and compares them to those of normal bulk CMOS process. The influence of various parameters, such as substrate resistivity, buried oxide thickness and distance between devices, is investigated. The use of capacitive guard rings is proposed, and their effectiveness is demonstrated. A simple RC model has been developed to allow a deep understanding of these phenomena as well as to simplify future studies of more complex systems. The superiority of high-resistivity SIMOX substrates over standard SOI and bulk is finally demonstrated 相似文献
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利用CMOS/SOI工艺在4英寸SIMOX材料上成功制备出沟道长度为1μm、器件性能良好的CMOS/SOI部分耗尽器件和电路,从单管的开关电流比看,电路可以实现较高速度性能的同时又可以有效抑制泄漏电流.所研制的51级CMOS/SOI环振电路表现出优越的高速度性能,5V电源电压下单门延迟时间达到92ps,同时可工作的电源电压范围较宽,说明CMOS/SOI技术在器件尺寸降低后将表现出比体硅更具吸引力的应用前景. 相似文献
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采用SIMOX材料,研制了一种全耗尽CMOS/SOI模拟开关电路,研究了全耗尽SOI MOS场效应晶体管的阈值电压与背栅偏置的依赖关系,对漏源击穿的Snapback特性进行分析,介绍了薄层CMOS/SIMOX制作工艺,给出了全耗尽CMOS/SOI电路的测试结果。 相似文献
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《Electron Device Letters, IEEE》1984,5(11):461-463
Two merged CMOS/bipolar technologies utilizing SOI structures have been demonstrated. In each case a single sequence of processing steps was used to fabricate fully isolated CMOS devices and vertical bipolar transistors on the same Si wafer. The CMOS devices were fabricated in zone-melting-recrystallized SOI film, while the bipolar devices were fabricated either in the SOI film or in epitaxial Si layers grown selectively on the Si substrate. Good electrical characteristics were obtained for the CMOS devices and for both SOI and epitaxial bipolar devices. 相似文献
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采用多晶硅栅全耗尽CMOS/SIMOX工艺成功研制出多晶硅栅器件,其中N+栅NMOS管的阈值电压为0.45V,P+栅PMOS管的阈值电压为-0.22V,在1V和5V电源电压下多晶硅栅环振电路的单级门延迟时间分别为1.7ns和350ps,双多晶硅栅SOI技术将是低压集成电路的一种较好选择。 相似文献
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CMOS on local SOI, in which n-MOS/bulk and p-MOS/SOI can be selectively implemented on the same chip, has been developed. SOI regions are formed by SIMOX technology, while bulk regions are prepared by etching of the buried SiO2. A CMOS inverter fabricated on local SOI shows good transfer characteristics. 相似文献