A BiCMOS Differential Amplifier and Timing Discriminator for the Receiver of a Laser Radar

A differential BiCMOS amplifier channel with gain control circuitry and a timing discriminator has been designed for a pulsed time-of-flight laser radar. The measured bandwidth of the amplifier channel is 160 MHz and its gain can be controlled with a variable R-2R ladder attenuator in 7 discrete steps from 0.44 to 23. A peak detector, used for gain control, can detect the peak of a single 10 ns pulse, the amplitude of which varies from 50 mV to 3.5 V. The timing discriminator produces accurately timed logic level pulses from noisy analog output pulses of the amplifier channel. The distance measurement result of the designed timing discriminator varies +/– 4 mm with an input amplitude range of 55 mV – 3.3 V. The single shot resolution with SNR = 250 is better than 6 mm. Measurement results suggest that a cm-level distance measurement accuracy can be realized using integrated ASICs.     

Integrated Receiver Including Both Receiver Channel and TDC for a Pulsed Time-of-Flight Laser Rangefinder With cm-Level Accuracy

An integrated receiver that includes both the time-to-digital converter (TDC) and the receiver channel and is intended for a pulsed time-of-flight laser rangefinder with a measurement range of approximately 10 m has been designed and fabricated in a standard 0.13 $mu{hbox {m}}$ CMOS process. The receiver operates by detecting the current pulse of an optical detector and producing a stop timing mark for the TDC by means of a leading edge timing discriminator. The TDC is used to measure the actual time interval between the start and stop pulses and the slew-rate of the stop pulse, to compensate for a walk error produced in the discriminator. The single-shot precision of the whole receiver is 250 ps for a minimum detectable signal, and its accuracy and power consumption are $pm$ 37 ps with compensation within a dynamic range of at least 1:10,000 and less than 45 mW, respectively. The size of the die is $hbox{1300} mu{hbox {m}}times hbox{1300} mu{hbox {m}}$ including pads.      

A wide dynamic range receiver channel for a pulsed time-of-flightlaser radar

An integrated receiver channel for a pulsed time-of-flight (TOF) laser rangefinder has been designed and tested. The bandwidth of the receiver channel is 170 MHz, the transimpedance can be controlled in the range from 1.1 kΩ to 260 kΩ, and the input-referred noise is ~6 pA/√Hz. The distance measurement accuracy is ±4.7 mm (average of 10000 measurements), taking into account walk error (input signal amplitude varies in the range 1:624) and jitter. A considerable increase in the input dynamic range of the receiver has been achieved by placing an integrated current buffer with variable attenuation between the external photodetector and the transimpedance preamplifier. Integrated electronic gain control structures together with the small size and low power consumption achieved by the use of full custom integrated technology considerably simplifies rangefinding devices for many applications. The circuit was implemented in an 0.8-μm BiCMOS process     

SiC thin-film Fabry-Perot interferometer for fiber-optic temperature sensor

Polycrystalline SiC grown on single-crystal sapphire substrates have been investigated as thin-film Fabry-Perot interferometers for fiber-optic temperature measurements in harsh temperatures. SiC-based temperature sensors are compact in size, robust, and stable at high temperatures, making them one of the best choices for high temperature applications. SiC films with thickness of about 0.5-2.0 /spl mu/m were grown at 1100/spl deg/C by chemical vapor deposition (CVD) with trimethylsilane. The effect of operating temperature on the shifts in resonance minima, /spl Delta//spl lambda//sub m/, of the SiC/sapphire substrate has been measured in the visible-infrared wavelength range. A temperature sensitivity of 1.9/spl times/10/sup -5///spl deg/C is calculated using the minimum at /spl sim/700 nm. Using a white, broadband light source, a temperature accuracy of /spl plusmn/3.5/spl deg/C is obtained over the temperature range of 22/spl deg/C to 540/spl deg/C.     

An all-digital PLL for frequency multiplication by 4 to 1022 with seven-cycle lock time

An all-digital phase-locked loop (PLL) circuit in which resolution in the phase detector and digitally controlled oscillator (DCO) exactly matches the gate-delay time is presented. The pulse delay circuit is connected in a ring shape with 32 inverters (2/sup 5/ inverters). With the inverter gate-delay time as the time base, the pulse phase difference is detected simultaneously with the generation of the output clock. In this system, the phase detector and oscillator share a single ring-delay-line (RDL). This means the resolution is the same at all times, making a high-speed response possible. In a prototype integrated circuit (IC) using 0.65-/spl mu/m CMOS, the generation of a frequency multiplication clock was achieved with four reference clocks, and that of a phase-locked clock with seven reference clocks, for a high-speed response. The cell size was 1.08 /spl times/ 1.08 mm/sup 2/, and the output clock frequency had a wide range of 50 kHz/spl sim/60 MHz. The multiplication range of the clock frequency was also a very wide 4/spl sim/1022, and a high level of precision was achieved with a clock jitter standard deviation of 234 ps. This digital PLL can withstand a broad range of operating environments, from -30/spl deg/C/spl sim/140/spl deg/C, and is suitable for making a programmable clock generator on a chip.     

Receiver channel with resonance-based timing detection for a laser range finder

An integrated receiver channel for a pulsed time-of-flight laser range finder is presented. The receiver operates in a wide dynamic range without gain control. This is achieved by converting the received unipolar pulse to a bipolar waveform already after the optical detector before the signal is fed to amplifier blocks. Thus the nonlinearities of the amplifiers have the minimum effect on the timing point, which is located in the zero crossing of the bipolar pulse. A parallel resonant circuit is used to shape the pulse in the input of the channel, which consists of a cascade of limiting voltage amplifiers followed by a comparator. The measurements show that the receiver has a walk error of 74 ps in the dynamic range of 1:1280. This corresponds to 11 mm in distance. The minimum usable input signal is limited by the noise of the receiver and equals 1.9 /spl mu/A.     

Design and fabrication of zinc oxide thin-film ridge waveguides on silicon substrate with ultraviolet amplified spontaneous emission

Zinc oxide (ZnO) thin-film ridge waveguides have been designed and fabricated on n-type (100) silicon substrate. A filtered cathodic vacuum arc technique is used to deposit high-crystal-quality ZnO thin films on lattice-mismatched silicon substrates at 230/spl deg/C. A ridge waveguide of width /spl sim/2 /spl mu/m and height /spl sim/0.1 /spl mu/m is defined on the ZnO thin film by plasma etching. Room-temperature amplified spontaneous emission is observed with peak wavelength at /spl sim/385 nm under 355-nm optical excitation. It is found that the net optical gain of the ZnO thin-film ridge waveguides can be as large as 120 cm/sup -1/ at a pump intensity of /spl sim/1.9 MW/cm/sup 2/.     

Baseband stage for WCDMA direct conversion receiver with high dynamic range and accurate temperature compensation

A highly integrated baseband stage, which adopts a new configuration for the wideband code-division multiple access (WCDMA) direct conversion receiver (DCR), is described. The baseband stage satisfies all requirements of the WCDMA DCR and consists of opamp-RC channel select filters and variable gain amplifiers with linear-in-dB gain control. It achieves a high dynamic range of 85 dB with /spl plusmn/1.5 dB accuracy over a temperature variation from -25 to 85/spl deg/C, 16.5 nV//spl radic/Hz input-referred noise, +20 dBV out-of-band IIP3 and +70 dBV out of band IIP2. The baseband stage is fabricated using a 0.35 /spl mu/m SiGe BiCMOS process and consumes a total current of 11 mA/CH from a 2.7 V supply.     

A high sensitive 66 dB linear dynamic range receiver for 3-D laser radar

This study presents a CMOS receiver chip realized in 0.18 μm standard CMOS technology and intended for high precision 3-D laser radar. The chip includes an adjustable gain transimpedance pre-amplifier, a post-amplifier and two timing comparators. An additional feedback is employed in the regulated cascode transimpedance amplifier to decrease the input impedance, and a variable gain transimpedance amplifier controlled by digital switches and analog multiplexer is utilized to realize four gain modes, extending the input dynamic range. The measurement shows that the highest transimpedance of the channel is 50 kΩ, the uncompensated walk error is 1.44 ns in a wide linear dynamic range of 66 dB (1:2000), and the input referred noise current is 2.3 pA/√Hz (rms), resulting in a very low detectable input current of 1 μ A with SNR=5.     

Electron beam direct-write tunable polymeric waveguide grating filter

We report a tunable electron beam direct-write polymeric waveguide Bragg grating filter based on a negative tone epoxy, The waveguide filter, with a 5-mm-long first-order grating, exhibits a transmission peak of -27 dB and a 3-dB bandwidth of /spl sim/0.8 nm, and there is an excellent agreement between experimental data and simulation results. The temperature response of the filter is also characterized. The rate of change of refractive index dn/dT is /spl sim/ -1.8 /spl times/ 10/sup -4///spl deg/1C at 1550-nm wavelength for both transverse electric and transverse magnetic polarizations, and the rate of change of peak wavelength d/spl lambda//dT is /spl sim/ -0.14 nm//spl deg/C. The tuning performance is comparable to other grating devices fabricated using multiple processing steps.     

Optical receiver IC for CD/DVD/blue-laser application

In this paper, an optoelectronic receiver IC for CD, DVD, and Blue-Laser optical data storage applications is presented. The IC was developed in a 0.5-/spl mu/m BiCMOS technology with integrated PIN photodiodes. It includes a new architecture of high-speed and low-noise variable gain transimpedance amplifiers witch current preamplifier input. The amplifier transimpedance gain is programmable over a gain range of 130 /spl Omega/ to 270 k/spl Omega/ by a serial interface. The amplifier small-signal bandwidth is 260 MHz for the highest gain, which gives a gain-bandwidth product of 70 THz/spl Omega/ and a sensitivity improvement by a factor of 2 compared to published OEICs. The amplifiers support a special write/clip mode which realizes a nonlinear gain reduction for high input signals. The output voltage buffers are 130-/spl Omega/ impedance matched for optimized data transmission over a flex cable. The impedance is generated by active-impedance synthesis to increase the output dynamic range.     

A 1.8-V 10-Gb/s fully integrated CMOS optical receiver analog front-end

A fully integrated 10-Gb/s optical receiver analog front-end (AFE) design that includes a transimpedance amplifier (TIA) and a limiting amplifier (LA) is demonstrated to require less chip area and is suitable for both low-cost and low-voltage applications. The AFE is fabricated using a 0.18-/spl mu/m CMOS technology. The tiny photo current received by the receiver AFE is amplified to a differential voltage swing of 400 mV/sub (pp)/. In order to avoid off-chip noise interference, the TIA and LA are dc-coupled on the chip instead of ac-coupled though a large external capacitor. The receiver front-end provides a conversion gain of up to 87 dB/spl Omega/ and -3dB bandwidth of 7.6 GHz. The measured sensitivity of the optical receiver is -12dBm at a bit-error rate of 10/sup -12/ with a 2/sup 31/-1 pseudorandom test pattern. Three-dimensional symmetric transformers are utilized in the AFE design for bandwidth enhancement. Operating under a 1.8-V supply, the power dissipation is 210 mW, and the chip size is 1028 /spl mu/m/spl times/1796 /spl mu/m.     

High-gain low-noise mid-infrared quantum cascade optical preamplifier for receiver

Optical preamplifier (OPA) in the mid-infrared can boost weak signals in systems such as lidars or optical wireless links to improve the receiver sensitivity. Quantum-cascade-based traveling-wave OPA with off-normal Bragg-grating (BG) coupled surface-emitting configuration have been developed with a net small-signal gain up to 13 dB over a spectral range /spl sim/70 nm around 4.7 /spl mu/m, limited by the wafer gain bandwidth, and the linear dynamic range was >20 dB. Amplified spontaneous emission (ASE) was measured and the spontaneous emission factor was determined N/sub sp//spl sim/1, indicating near quantum-limit noise behavior. Surface-emitting BG devices yielded diffraction-limited output beam, and provided simultaneous wavelength dispersion and ASE filtering. The OPA was coupled with a detector to form a receiver that is polarization-selective, has a net gain 8-13 dB with a corresponding optical filter bandwidth 25-50 GHz. These results suggest that BG-coupled OPA receivers can be useful for multispectral/wavelength-division-multiplexing systems in free space applications.     

Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 /spl mu/m VCSELs

InAlGaAs/InP-based all-monolithic 1.3 /spl mu/m VCSELs operating continuous wave up to 18/spl deg/C are demonstrated. The whole structure is grown by a single step of MOCVD. Selective wet etching of an InP layer is used to form an air-gap aperture for the current confinement. The threshold current of an 8 /spl mu/m device at 15/spl deg/C is /spl sim/2.8 mA.     

Widely tunable long-period gratings fabricated in polymer-clad ion-exchanged glass waveguides

Long-period-grating filters were fabricated in polymer-clad ion-exchanged BK7 glass waveguides. The transmission spectra of the filters exhibited strong polarization dependence. A contrast as high as 25 dB at the resonance wavelength was obtained. The temperature sensitivity of the filters was measured to be /spl sim/9.0 nm//spl deg/C, which allows potential wavelength tuning over the entire S+C+L band of /spl sim/180 nm with a temperature control over a range of /spl sim/20/spl deg/C.     

Design of a low-power 3.5-GHz broad-band CMOS transimpedance amplifier for optical transceivers

This paper describes a novel low-power low-noise CMOS voltage-current feedback transimpedance amplifier design using a low-cost Agilent 0.5-/spl mu/m 3M1P CMOS process technology. Theoretical foundations for this transimpedance amplifier by way of gain, bandwidth and noise analysis are developed. The bandwidth of the amplifier was extended using the inductive peaking technique, and, simulation results indicated a -3-dB bandwidth of 3.5 GHz with a transimpedance gain of /spl ap/60 dBohms. The dynamic range of the amplifier was wide enough to enable an output peak-to-peak voltage swing of around 400 mV for a test input current swing of 100 /spl mu/A. The output noise voltage spectral density was 12 nV//spl radic/Hz (with a peak of /spl ap/25 nV//spl radic/Hz), while the input-referred noise current spectral density was below 20 pA//spl radic/Hz within the amplifier frequency band. The amplifier consumes only around 5 mA from a 3.3-V power supply. A test chip implementing the transimpedance amplifier was also fabricated using the low-cost CMOS process.     

Enhancing leakage suppression in carbon-rich silicon junctions

Carbon-incorporated devices exhibit an increase in junction leakage relative to pure Si devices. The authors demonstrate that a leakage suppression of /spl sim/ 50 times can be achieved in carbon-rich (Si:C) junctions. This is accomplished by a prolonged annealing for 1 to 10 min at 850 /spl deg/C (much lower than typical annealing temperature of >1000/spl deg/C) and is attributed to a decrease in interstitial carbon concentration. After a 10-min annealing, the Si:C junctions display a leakage of 4/spl times/10/sup -13/ A//spl mu/m, which is much lower than that of 1050 /spl deg/C spike annealed Si junctions and well within the I/sub off/ requirements of low-standby-power device at the 45-nm node. Carbon-incorporated transistors with a gate length of 0.18 /spl mu/m exhibit an I/sub off/ reduction of /spl sim/ 10 times, compared to pure Si transistors, and both transistors have a similar subthreshold slope of 81 mV/dec.     

Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-/spl mu/m AlGaInAs MQW lasers

The potential of 1.3-/spl mu/m AlGaInAs multiple quantum-well (MQW) laser diodes for uncooled operation in high-speed optical communication systems is experimentally evaluated by characterizing the temperature dependence of key parameters such as the threshold current, transparency current density, optical gain and carrier lifetime. Detailed measurements performed in the 20/spl deg/C-100/spl deg/C temperature range indicate a localized T/sub 0/ value of 68 K at 98/spl deg/C for a device with a 2.8 /spl mu/m ridge width and 700-/spl mu/m cavity length. The transparency current density is measured for temperatures from 20/spl deg/C to 60/spl deg/C and found to increase at a rate of 7.7 A/spl middot/cm/sup -2//spl middot/ /spl deg/C/sup -1/. Optical gain characterizations show that the peak modal gain at threshold is independent of temperature, whereas the differential gain decreases linearly with temperature at a rate of 3/spl times/10/sup -4/ A/sup -1//spl middot//spl deg/C/sup -1/. The differential carrier lifetime is determined from electrical impedance measurements and found to decrease with temperature. From the measured carrier lifetime we derive the monomolecular ( A), radiative (B), and nonradiative Auger (C) recombination coefficients and determine their temperature dependence in the 20/spl deg/C-80/spl deg/C range. Our study shows that A is temperature independent, B decreases with temperature, and C exhibits a less pronounced increase with temperature. The experimental observations are discussed and compared with theoretical predictions and measurements performed on other material systems.     

Wideband quantum-dash-in-well superluminescent diode at 1.6 /spl mu/m

We demonstrate broadband superluminescent diode at /spl sim/1.6-/spl mu/m peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 nm. The device produces a low spectrum ripple of 0.3dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 /spl deg/C under 8 kA/cm/sup 2/.     

High-power monolithic passively modelocked quantum-dot laser

High-power operation of monolithic modelocked lasers based on 1.26 /spl mu/m self-organised quantum dots has been achieved in the 30-60/spl deg/C range for the first time. A 60/spl deg/C peak power reaches 1.7 W with a pulse width of 3.2 ps at a repetition frequency of 5 GHz.