共查询到17条相似文献,搜索用时 78 毫秒
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采用直流磁控溅射方法在柔性Kapton基片上沉积了FeCoSiB薄膜,研究了偏置磁场、溅射气压以及测试频率对薄膜应力阻抗效应的影响规律.结果表明,本文中优化的溅射气压为1.5 Pa,强的偏置磁场可形成强的横向各向异性,从而显著提高材料的应力阻抗效应.随着测试频率从0.1MHz升高到30 MHz,薄膜的应力阻抗效应显著增强. 相似文献
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热处理温度对FeCoSiB薄膜及FeCoSiB/Cu/FeCoSiB三明治膜应力阻抗效应的影响 总被引:5,自引:0,他引:5
采用DC磁控溅射法在玻璃基片上制备了FeCoSiB薄膜和FeCoSiB/Cu/FeCoSiB 三明治膜,并进行磁场退火热处理以消除残余应力和形成磁织构,提高薄膜的应力阻抗效应。薄膜的磁性能采用振动样品磁强计(VSM)进行测试,采用HP4275A 型阻抗分析仪在200kHz~10MHz频率范围内测试薄膜的应力阻抗效应。结果表明,磁场退火热处理可形成感生磁各向异性,改善薄膜的软磁性能、提高薄膜的应力阻抗效应。在温度低于300℃时,随着退火温度的增加,薄膜的应力阻抗效应增大;当退火温度超过300℃时,薄膜的应力阻抗效应随退火温度增加而降低。与Fe CoSiB单层膜相比, FeCoSiB/Cu/FeCoSiB 三明治膜应力阻抗效应较大。10MHz测试频率下,在基片末端位移为450μm时,经300℃热处理的三明治膜达到了8.3%,而单层膜仅有1.86%。当测试频率较高为10和4MHz时,薄膜的应力阻抗效应变化不大,当测试频率下降到低于1MHz时,薄膜的应力阻抗效应显著降低。 相似文献
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分析材料磁化过程中引起磁致伸缩的机理,考虑应力对磁化过程的影响,通过将应力作用等效为磁场,并假设非晶超磁致伸缩薄膜的低场磁化为可逆过程,根据能量最低原理,建立了磁致伸缩薄膜形变与应力之间的关系,给出了表达式. 相似文献
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采用单辊法制备非晶FeCoSiB薄带,并进行退火处理以消除残余应力,提高薄带的压磁效应.采用4294A型阻抗分析仪在40Hz~100MHz频率范围内测试薄带的压磁效应.结果表明,退火可使薄带内部产生磁各向异性,消除内应力,提高薄带的压磁性能.在退火低于300℃时,薄带压磁效应随着退火温度的增加而增加;但当退火温度高于300℃后,薄带压磁效应随着退火温度的增加而降低.当温度为300℃时,退火时间也会对薄带的压磁性能产生影响,在退火时间低于1h时,薄带压磁效应随着退火时间的增加而增加;但当退火温度高于1h后,薄带压磁效应随着退火时间的增加而降低.非晶FeCoSiB薄带的经过300℃×1h退火后,测试频率为100MHz﹑压力为1.42MPa时,阻抗变化可达3.38Ω,压磁性能最佳. 相似文献
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采用射频溅射法在三组不同溅射条件下制备了FeSiB薄膜。测量了溅射薄的磁滞回线,并利用HP4194A阻抗分析仪,在1-40HMz频率范围内研究了样品的巨磁阻抗效应。 相似文献
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It is important to control magnetic anisotropy of ferromagnetic materials. In this work, magnetic anisotropy of amorphous FeCoSiB films is controlled by stress annealing. FeCoSiB films are deposited on glass substrate and annealed with stress in vacuum. When the annealed films are released from clamp, permanent tensile or compressive strain can be introduced in the films. Influences of both tensile and compressive strain on the magnetic properties of FeCoSiB films have been studied. The results show that FeCoSiB films by stress annealing exhibit strong magnetic anisotropy while the samples by normal annealing exhibit magnetic isotropy. Easy axis along the stress is induced in the films with tensile stress, while easy axis perpendicular to the stress is induced in the samples with compressive stress. It has also been found that the magnetic anisotropy increases with the increase of the strain. The effects of strain on the magnetic properties of FeCoSiB films have been interpreted by stress induced anisotropy via magnetoelastic coupling. 相似文献
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Processing conditions for rf magnetron sputter-deposited amorphous TbFe films in which an atomic scale structural anisotropy
(ASSA) results as a natural consequence of selective resputtering at the film surface during growth are presented. The ASSA,
measured using polarization-dependent X-ray absorption fine structure with quantitative modelling via a parametrized nonlinear
least squares fitting, is described as a pair order anisotropy (POA) where a statistical preference exists for like atom pairs
in-plane and unlike atom pairs perpendicular to the film plane. The perpendicular magnetic anisotropy (PMA) energy increases
with increasing POA for samples grown using decreasing rf power and increasing working gas pressure. The POA directly reflects
the anisotropic electrostatic environment at the rare earth site which is required for PMA to result from a single ion anisotropy
mechanism. 相似文献
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We studied the effects of MgO and MgO/Pd seed-layers on perpendicular magnetic anisotropy in co-sputtered CoPd films. CoPd films with the MgO seed-layer showed perpendicular magnetic properties that were superior to those with another after annealing. The loop squareness was unity, indicating strong perpendicular magnetic anisotropy, when the MgO seed-layer was thicker than 2 nm. We observed that the out-of-plane CoPd (111) texture was strongly developed, as well as the in-plane tensile stress in the CoPd films. The magnetoelastic anisotropy coming from a negative magnetostriction λ111 under the in-plane tensile stress dominating over other anisotropies is likely responsible for creating such strong perpendicular magnetic anisotropy. In the case of the MgO/Pd seed-layer, the CoPd films showed mixed anisotropy having both in-plane and out-of-plane magnetic anisotropy components after annealing. The appearance of the strong (100) texture of the CoPd films with the MgO/Pd seed-layer is believed to have caused the decrease in the perpendicular magnetic anisotropy that originated from the magnetoelastic anisotropy due to the additional contribution from the positive magnetostriction λ100 but less contribution from the negative magnetostriction λ111 when the CoPd films are under in-plane tensile stress. 相似文献
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采用Taylor-Ulitovsky方法制备了直径分别在6.3~28.0μm、20.2~28.0μm和14.0~35.2μm之间的玻璃包覆非晶态FeCuNbVSiB、FeBSiCMn和CoNiFeSiB微丝。通过X射线衍射、扫描电镜、振动样品磁强计分别测试了玻璃包覆微丝的组织结构、微观形貌和磁性,研究了不同成分玻璃包覆磁性合金微丝的玻璃包覆层厚度、合金芯直径对微丝磁性能的影响。结果表明了,玻璃包覆磁性合金微丝的磁性能的影响因素由大到小依次为:饱和磁致伸缩系数、微丝成分和微丝尺寸。轴向磁化时随着微丝直径及玻璃包覆层厚度的增大,3 种微丝的径向饱和场强度降低,FeCuNbVSiB和FeBSiCMn微丝的轴向矫顽力先分别由508 A/m和390 A/m降低到486 A/m和278 A/m后再升高到2570 A/m和342 A/m,CoNiFeSiB微丝的轴向矫顽力由171 A/m降低到63 A/m。 相似文献
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L. Xi X.Y. LiJ.J. Zhou J.H. DuJ.H. Ma Z. WangJ.M. Lu Y.L. ZuoD.S. Xue F.S. Li 《Materials Science and Engineering: B》2011,176(16):1317-1321
FeCoNd thin film with thickness of 166 nm has been fabricated on silicon (1 1 1) substrates by magnetron co-sputtering and annealed for one hour under magnetic field at different temperatures (Ta) from 200 °C to 700 °C. The As-deposited and annealed FeCoNd film samples at Ta ≤ 500 °C were amorphous while the ones obtained at Ta ≥ 600 °C were crystallized. We found that the perpendicular anisotropy field gradually decreases as the annealing temperature increases from room temperature to 300 °C. A well induced in-plane uniaxial anisotropy is achieved at the annealing temperature between 400 and 600 °C. The variation of the dynamic magnetic properties of annealed FeCoNd films can be well explained by the Landau-Lifshitz equation with the variation of the anisotropy field re-distribution and the damping constant upon magnetic annealing. The magnetic annealing might be a powerful post treatment method for high frequency application of magnetic thin films. 相似文献
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Field induced magnetic-anisotropy is a very important but poorly understood property. There have been many hypotheses on the origin of the phenomenon, e.g. strain, atomic pair ordering, etc., but little experimental evidence exist. This study prepares 100 nm thick Permalloy films having the field-induced-magnetic-anisotropy and carefully measure strains, i.e. interplanar distance of crystallographic (111) planes in various directions, using high power synchrotron radiation and precise Grazing Incidence X-Ray Diffraction method. The result delineates that the field-induced-magnetic-anisotropy has a strong correlation with the strain-anisotropy in the film. 相似文献