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本文报道了Al/LB聚酰亚胺膜/P-Si(100)MIS结构的C一V特性研究结果.67层LB膜样品C-V特性近乎理想,具有负的固定电荷密度约1011cm-2量级,平带时滞后小于0.3V对于MIS隧道结,除了在-0.5—-1.5V间具有反型层箝位产生的电容峰外,在-1.5—-4V间还出现了另一电容峰值.假设在强电场下隧穿能力剧增,从而结构由隧穿限制区重新进入半导体限制区,可以解释这一峰值的出现,考虑到少子注入引入的扩散电容,正、反向扫描时电容峰值的差别可以得到解释 相似文献
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立方A^4+M^5+2O7型化合物与新型负热膨胀材料 总被引:1,自引:0,他引:1
概述了立方A^4+M^5+2O7型化合物的结构特点,讨论了AV2-xPxO7型(A=Zr或Hf;x=0.1~1.2)及其部分取代的A^4+1-yB^4+yV2-xPxO7型(B=Ti,Ce,Th,U,Mo,Pt,Pb,Sn,Ge或Si;y=0.1~0.4)和A^4+1-yC^1+yD^3+yV2-xPxO7型(C为碱金属元素,D为稀土金属元素)材料的负热膨胀性能。 相似文献
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报导了采用全MOCVD生长的1.55μm的单片集成DFB=LD/EA组件的 在DWDM系统上的传输测试结果,出纤功率Pf≥2.5mW@If=75mA,边模抑制比SMSR〉35dB,调制器反向偏压为2.5V时的消光比为14dB,该发射模块在2.5Gb/sDWDM系统上进行了传输试验,传输240Km后无误码,其通道代价≤1dB@BER=10^-12。 相似文献
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DBM-g-PE与PVC的相互作用研究EI 总被引:5,自引:1,他引:4
采用固相接枝法制备了DBM-g-PE,用红外光谱分析证明了接枝物确实存在。PVC/CPE=100/5合金性能测定结果表明,添加5份接枝物的合金(A),缺口冲击强度、拉伸强度分别为18.2kJ/m2和53.0MPa;而添加5份PE的合金(B),其相应性能为5.1kJ/m2和33.8MPa。不加接枝物的合金(C),虽有高韧性,但拉伸强度却由53.0MPa降至50.2MPa。DSC、SEM的结果均表明,PE接枝DBM后与PVC的相互作用增强,与CPE协同作用能增韧、增强PVC,并探讨了其机理。 相似文献
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HL—1M装置硼化膜的研究 总被引:2,自引:0,他引:2
HL-1M装置采用C2B10H12蒸汽等离子体增强沉积技术对第一壁进行了原位硼化,在第一壁表面上形成一层半透明、非晶a-B/C:H膜。在单电极、1.2A/750V放电参数下,平均沉积速率为110nm/h,膜厚不均匀度为84%,B/C=0.6-2.0,B-C的结合能为97-99eV,与B/C值有关。膜层中有20-30%的硼是以B-C的形式存在,70-80%碳是以a-C:H形式存在,这是HL-1M装置 相似文献
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张湘义 《理化检验(物理分册)》1995,31(2):28-29,44
对Fe73.5Cu1Mo3Si13.5B9微晶软磁合金的结构及其对合金磁性的影响了研究,结果表明,在最佳磁性能下,晶相点阵常数a=0.2843nm,相当于Fe(Si)固溶体中含Si%(mol/mol):18-20,体积百分数V=74.8%,晶粒尺寸D=14.6nm;残余非晶层厚度δ=1.23nm;当T退火≥560℃时明显有Fe-B化合物析出。Fe73.5Cu1Mo3Si13.5B9合金的磁性不仅与 相似文献
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一种改进的C-V主动轮廓模型 总被引:7,自引:0,他引:7
本文对C-V主动轮廓模型进行改进.依据曲线演化理论对C-V模型中的图像数据力驱动项进行简化,提出一种常微分方程(ODE)类型的模型.理论分析验证了该模型的水平集函数可初始化为零.与传统C-V模型相比,不但具有其特点,如可以自动检测带孔目标的内轮廓等,而且具有以下优点:抗噪性能较优;水平集函数无需重新初始化,可快速计算出全局最优分割;远离轮廓的边界可以被准确检测;时间迭代步长不受限制.对合成和真实图像的分割结果证明了本文模型具有稳健、快速的优点. 相似文献
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Huadong Li Subramanyam G. 《IEEE transactions on ultrasonics, ferroelectrics, and frequency control》2009,56(9):1861-1867
Thin-film ferroelectric capacitance can be obtained by 2 different methods. Capacitance obtained using the derivative of its hysteresis loop is related to large applied signals and can be called the large-signal capacitance. Capacitance measured directly with a small, applied ac signal together with a slow changing dc bias is called the small-signal capacitance. This paper investigated the voltage dependence of the large- and small-signal capacitances. Measurements show that the large-signal C-V curve of thin-film ferroelectrics has much sharper peaks and higher peak values than the small-signal C-V curve. Analyses based on the Landau-Khalatnikov model shows that practical small-signal capacitance is closer to the ideal capacitance. However, its C-V curve has clearance areas around the coercive voltage, and the polarization switching is not reflected in the small-signal capacitance. This causes the peaks of small-signal C-V curves to be lower than that of large-signal C-V curves. 相似文献
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Capacitance-voltage (C-V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C-V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent atomistic simulations. The results indicate strong dependence of the GNR C-V characteristics on the edge shape. For zigzag edge GNRs, highly nonuniform charge distribution in the transverse direction due to edge states lowers the gate capacitance considerably, and the self-consistent electrostatic potential significantly alters the band structure and carrier velocity. For an armchair edge GNR, the quantum capacitance is a factor of 2 smaller than its corresponding zigzag carbon nanotube, and a multiple gate geometry is less beneficial for transistor applications. Magnetic field results in pronounced oscillations on C-V characteristics. 相似文献
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《Materials Science & Technology》2013,29(12):1596-1604
AbstractThe as cast hot ductility of low C-V, low C-V-Nb, and niobium microalloyed steels has been investigated using in situ melted tensile specimens, which were subjected to cooling rates and strain rates found typically in thin slab casting. Stress relaxation tests were performed on in situ melted specimens to monitor the kinetics of strain induced precipitation in the above steels. Although the addition of niobium to low C-V and low C-V-N steels increased the temperature at which ductility began to deteriorate, ductility was improved in the low temperature region of the austenite. This was attributed to a delay in NbVC,N precipitation in V-Nb steels. Increasing the nitrogen content did not influence the temperature at the onset of ductility loss in low C-V and low C-V-Nb steels, but did increase the temperature marking the onset of the ductility trough. Faster cooling rates led to a deterioration of ductility in low C-V-N and low C-V-Nb-N steels. The as cast ductility of low C-V and low C-V-Nb steels was superior to that as of cast peritectic C-Nb steel as well as reheated peritectic C-V and peritectic C-V-Nb steels. 相似文献
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MF(I)S结构设计对硅基铁电薄膜系统C-V特性的影响 总被引:4,自引:0,他引:4
为制备符合铁电场效应晶体管( F F E T) 及铁电存储二极管( F M D) 要求的高质量铁电薄膜,采用 P L D ( Pulsed Laser Deposition) 工艺, 制备了不同 M F ( I) S 结构的硅基铁电薄膜系统由 C- V特性的对比分析可见, 影响 C- V 特性的主要因素除了衬底类型、界面特性之外, 还有薄膜的结构设计在此基础上, 为改善铁电薄膜的 C- V 特性提出了合理设想 相似文献
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MF(I)S结构设计对硅基铁电薄膜系统C-V特性的影响 总被引:1,自引:0,他引:1
为制备符合铁电场效应晶体管( F F E T) 及铁电存储二极管( F M D) 要求的高质量铁电薄膜,采用 P L D ( Pulsed Laser Deposition) 工艺, 制备了不同 M F ( I) S 结构的硅基铁电薄膜系统由 C- V特性的对比分析可见, 影响 C- V 特性的主要因素除了衬底类型、界面特性之外, 还有薄膜的结构设计在此基础上, 为改善铁电薄膜的 C- V 特性提出了合理设想. 相似文献
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王华 《材料科学与工程学报》2004,22(5):713-716
为制备符合铁电存储器件要求的高质量铁电薄膜,采用溶胶-凝胶(Sol-Gel)工艺,制备了Si基Bi4Ti3O12铁电薄膜及MFS结构的Ag/Bi4Ti3O12/P-Si异质结,对Bi4Ti3O12薄膜的相结构特征及异质结的C-V特性进行了测试与分析.XRD图谱显示,Si基Bi4Ti3O12薄膜具有沿c-轴择优取向生长的趋势,而Ag/Bi4Ti3O12/p-Si异质结顺时针回滞的C-V特性曲线则表明,该异质结可实现电极化存储.此外,对该异质结C-V特性曲线的非对称及向负偏压方向偏移的产生原因也进行了分析.在此基础上,为提高铁电薄膜的铁电性能及改善其C-V特性提出了合理的结构设想. 相似文献
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The memory effects of a three-layer nonvolatile memory device Al/C60/ZnO nanoparticles embedded in a polyimide (PI) layer/C60/p-Si were investigated by using capacitance-voltage (C-V) measurements. Transmission electron microscopy and selected area electron diffraction pattern measurements showed that ZnO nanocrystals were formed inside the PI layer. The insertion of C60 layer improved the charge trap state density in the ZnO nanoparticle. The density was estimated by the flatband voltage shift in the C-V hysteresis, which increases with the max sweep voltage. Possible operating mechanisms corresponding to the charging and discharging process in the structure are proposed on the basis of the C-V results. 相似文献
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Lee SH Yun DY Jung JH You JH Kim TW Ryu E Kim SW 《Journal of nanoscience and nanotechnology》2011,11(1):449-452
InP nanoparticles were formed using a solution method, and the InP nanoparticles that were embedded in a polystyrene (PS) layer were formed using the spin-coating method. The transmission electron microscopy images showed that the InP nanoparticles were randomly distributed in the PS layer. The measured capacitance-voltage (C-V) of the Al/InP nanoparticles embedded in the PS layer/PS/p-Si(100) device at 300 K showed a clockwise hysteresis of the C-V curve. Based on the C-V results, the origin of variations in the memory storage of nonvolatile memory devices that were fabricated using InP nanoparticles embedded in a PS layer due to the scale-down was described. 相似文献
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The successful application of micro-sensing chips based on ion-sensitive field effect transistor principles depends on preventing the penetration of electrolyte into the interface between the encapsulation polymer and the insulating layer. This study employs a capacitance-voltage (C-V) technique to evaluate the adhesion and hermeticity of the polymer-substrate interface in a liquid environment. Three-layered structures simulating micro-sensing chips were fabricated for the evaluation. Each three-layered structure comprises an upper epoxy layer (with or without a window opening), a middle dielectric layer, and a lower Si wafer substrate. Equivalent circuits were established to explain the C-V characteristics of the three-layered structures. The results show that by applying the C-V technique and using an appropriate equivalent circuit, the adhesion and hermeticity between the encapsulating epoxy layer and the insulating layer can be evaluated. 相似文献