具有过量PbO的Ph（Zn_（1／3）Nb_（2／3））O_3－PbTiO_3系

合成了添加过量ＰｂＯ后的Ｐｂ（Ｚｎ１／３Ｎｂ２／３）Ｏ３－ＰｂＴｉＯ３（ＰＺＮ－ＰＴ）系陶瓷，并研究了其相结构及介电性能、在（１—ｘ）ＰＺＮ—ｘＰＴ（０．１＜Ｘ＜０．２）系陶瓷体中，添加过量ＰｂＯ提高了钙钛矿结构的稳定性，但过多地添加ＰｂＯ不利于提高其介电性能，当ＰＴ的摩尔浓度为１４—１９ｍｏｌ％时，这些组分最大介电常数和温度的关系与频率无关，而其介电常数的温度特性仍随频率变化而弥散     

Pb(Ni1/3Nb2/3)O3-PbTiO3系统准同型相界附近的介电异常

用两步合成法制备了（１－ｘ）Ｐｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３－ｘＰｂＴｉＯ３（ｘ＝０．３０－０．４０）陶瓷,对其相结构和介电性能进行了研究。ＸＲＤ分析表明,准同型相界在ＰＴ含量ｘ＝０．３４－０．３８范围内。介电性能研究结果表明,组成在准同型相界处的试样,其介电常数呈现最大值,同时还发现,准同型相界处的陶瓷出现介电双峰,其中一个为驰豫型铁电相向顺电相转变的相变峰;另一个介电峰处于１３０－１５０℃的高     

Pb（Ni_（1／3）Nb_（2／3））O_3－PbZrO_3－PbTiO_3三

对Ｐｂ（Ｎｉ１／３Ｎｂ２／３Ｏ３－ＰｂＺｒＯ３－ＰｂＴｉＯ３，即ｘＰｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３－（１－ｘ）Ｐｂ（ＺｒδＴｉ１－δ）Ｏ３（０．２≤ｘ≤０．６，０．２≤δ≤０．５）三元系固溶体的压电性能进行了研究，结果表明材料压电活性较高的配方位于准同型相界（ＭＰＢ）附近，压电常数ｄ３１值可达２６０×１０－１２Ｃ／Ｎ．讨论了结构相变对压电性能的影响．     

铌锌酸铅基陶瓷的铁电行为研究

采用具有改进ＳａｗｙｅｒＴｏｗｅｒ电路的全自动铁电体电滞回线测试系统，对（０．９ｘ）Ｐｂ（Ｚｎ１／２Ｎｂ２／３Ｏ３０．１ＢａＴｉＯ３ｘＰｂＴｉＯ３［（ｘ＝０．０５，０．１０，０．１５，简称ＰＺＮＢＴＰＴ（０．１／ｘ）］系列铁电陶瓷样品在０℃～１９０℃温度范围内强场下的极化强度进行了详细测试，并与其弱场介电行为对比，探讨了铁电宏畴微畴不同的强场极化特性，发现ＰＺＮＢＴＰＴ（１０／１５）铁电陶瓷样品的极化强度在自发正常铁电体弛豫型铁电体转变温度Ｔｎｒ下有一个增大过程。     

PZN—PT—PZT陶瓷的压电—铁电性能研究

将位于同型相界附近的固溶体系９．９１ＰＺＮ－０．０９ＰＴ作为一个组元,与同样位于准同上界的另一个组元Ｐｂ（Ｚｒ０．５３Ｔｉ０．４７）复合形成新的压电陶瓷体系（１－ｘ）（０．９１ＰＺＮ－０．０９ＰＴ）－ｘＰｂ（Ｚｒ０．５３Ｔｉ０．４７）Ｏ３,实验结果表明新体第具有更好的压电,介电性能,对样品退火处理后,发现压电,介电性能有较大提高,Ｋｐ最高达到７３％,ｄ３３最高达到５７０ｐｃ／Ｎ。     

Pb（Zn1／3Nb2／3）O3基复相陶瓷的结构与介电性能研究

在Ｐｂ（Ｚｎ１／３Ｎｂ２／３）Ｏ３－ＢａＴｉＯ３－ＰｂＴｉＯ３系统中选用两种具有不同居里温度的固溶体为起始组元，按对数混合法则对Ｐｂ（Ｚｎ１／３Ｎｂ２／３）Ｏ３基温度稳定电容器陶瓷的组成和介电性能进行设计的基础上，采用混合烧结法制备了（１－ｘ）ＬＴＣ－ｘＨＴＣ温度稳定电容器陶瓷。     

Pb1—xLaxTiO3薄膜的制备及介电特性研究

用溶胶－凝胶法在Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ（１００）基底上制备Ｐｂ１－ｘＬａｘＴｉＯ３（ＰＬＴ,ｘ〈０．２）薄膜,研究薄膜的结构及其介电、铁电性能。在６００℃下退火１小时的ＰＬＴ薄膜表现出单一的钙钛矿结构,（１００）择优取向明显,在室温下ＰＬＴ薄膜有典型的电滞回线。在ｘ〈０．２（摩尔比）的范围内,ＰＬＴ薄膜相对介电常数则随着Ｌａ的增加而增加。     

过量PbO和过量MgO对PMN-PT陶瓷相结构及介电性能的影响

采用ＮａＣｌ－ＫＣｌ熔盐法成功地制备了单一钙钛矿相结构的０．８ＰＭＮ－０．２ＰＴ陶瓷,并详细研究了添加过量ＰｂＯ和过量ＭｇＯ对０．８ＰＭＮ－０．２ＰＴ陶瓷样品的相结构和介电性能的影响。结果表明：过量ＰｂＯ和过量ＭｇＯ都能抑制和消除焦绿石相,并提高陶瓷的介电常数,但过量ＭｇＯ的效果更好。     

氧化铅含量对富铅气氛烧结的Pb(Zn1/3Nb2/3)O3基陶瓷介电性能的影响

从不同含量的ＰｂＯ初始粉体出发并在烧结时维持铅气氛的情况下,用二次合成法制备了０．７５Ｐｂ（Ｚｎ１／３Ｎｂ２／３）Ｏ３－０．１５ＢａＴｉＯ３－０．１０ＰｂＴｉＯ３三元系固溶体陶瓷,研究了初始粉体中不同的氧化铅含量对在铅气氛条件下烧结的该体系陶次的介电性能的影响。实验表明在富铅气氛的作用征,微量氧化铅欠缺的初始粉体所制备出的陶瓷具有较好的介电性能,尤其是当初始粉体中氧化铅欠缺５％时的陶瓷具有最大的峰值介电常数。     

具有超高压电电压常数的镧掺杂0.55Pb（Sc1／2Ta1／2）O3—0.45PbTiO …

研究了不同镧掺杂量与Ｐｂ（１－ｘ）Ｌａｘ（Ｓｃ１／２Ｔａ１／２）０．５５Ｔｉ０．４５Ｏ３（ｘ＝０，ｘ＝０．００５，ｘ＝０．０１，ｘ＝０．０ｘ，ｘ＝０．０３）陶瓷材料居里温度，压电常数有压电电压常数之间的关系以及高温热处理对材料性能的影响。研究表明材料的居里温度随镧添加量的提高按２６℃／１ａｔｍ％的幅度下降，只是在ｘ＝０．００５处出现异常现象，即该组分的材料的居里温度与ｘ＝０处相比稍有提高；材料的压     

Gd掺杂对PZT薄膜介电性能及极化行为的影响

采用sol-gel法在Pt/Ti/SiO₂/Si衬底上制备出高度(100)择优取向的Gd掺杂PZT薄膜(简写为PGZT); 介电测试结果表明, 1mol%Gd掺杂的PZT薄膜介电常数最大, 2mol%Gd掺杂PZT薄膜与未掺杂薄膜的介电常数相差不大, Gd掺入量>2mol%时, 薄膜的介电常数下降; 薄膜的不可逆极化值呈现与介电常数相同的变化趋势, 而可逆极化值变化较小. 在弱电场下(低于矫顽场E_c), 用瑞利定律分析薄膜介电常数随电场强度的变化规律, 1mol%Gd掺杂的薄膜瑞利系数α最大, 说明薄膜中缺陷的浓度最低. 1mol%Gd掺杂的薄膜介电和铁电性能的改善与Gd³⁺在PZT晶格中的占位情况有关.     

Tailoring of thermal and dielectric properties of LDPE-matrix composites by the volume fraction,density, and surface modification of hollow glass microsphere filler

Hollow glass microsphere (HGM) filled low-density polyethylene (LDPE) composites were prepared, and the effects of density, content, and surface modification of HGM on the thermal and dielectric properties of the composites were investigated. It is found that the thermal conductivity of the composites decreases with increasing HGM content or decreasing HGM density. At the same HGM content and density, the composites filled with suitable amount of silane coupling agent (KH570) modified HGM exhibit higher thermal conductivity than unmodified-HGM filled composites. The dielectric constant at 1 MHz of the composites also decreases with increasing HGM content or decreasing HGM density, but their dielectric loss increases with increasing HGM content or increasing HGM density. By modifying the surface of HGM with suitable amount of KH570, the dielectric constant and loss at 1 MHz of the composites can be decreased at the same time. The results of microwave dielectric properties of the composites indicate that the dielectric constant decreases with increasing HGM content or decreasing HGM density, the quality factor (Q × f) decreases with increasing HGM content or increasing HGM density, but both dielectric constant and quality factor are slightly affected by the surface modification of HGM. Due to lower intrinsic thermal conductivity and dielectric constant but higher dielectric loss of HGM than LDPE, the thermal conductivity and dielectric properties of the composites can be controlled with adding HGM and varying its volume fraction. The surface modification of HGM improves the interface contact between HGM and LDPE in the composites, which is confirmed by the SEM observation, and thus the heat conduction and dielectric properties at low frequency are improved. Based on calculated thermal conductivity and dielectric constant of HGM, the experimental trends of thermal conductivity and dielectric constant at 1 MHz of the composites are analyzed by using different models, including typical models for particles-filled composites and special models developed for hollow microsphere filled composites. The results from suitable models show close correlation with the experimental values.     

Effect of strain and grain boundaries on dielectric properties in La0.7Sr0.3MnO3 thin films

High dielectric constant and its dependence on structural strain and grain boundaries (GB) in La_0.7Sr_0.3MnO₃ (LSMO) thin films are reported. X-ray diffraction, magnetization, and magneto-transport measurements of the LSMO films, made by pulsed laser deposition on two different substrates—MgO and SrTiO₃ (STO), were compared to co-relate magnetic properties with dielectric properties. At room temperature, in the ferromagnetic phase of LSMO, a high dielectric constant (6 × 10⁴) was observed up to 100 kHz frequency for the films on MgO, with polycrystalline properties and more high-angle GB related defects, while for the films on STO, with single-crystalline properties but strained unit cells, high dielectric constant (≈10⁴) was observed until 1 MHz frequency. Also, a large dielectric relaxation time with significant broadening from the Debye single-dielectric relaxation model has been observed in samples with higher GB defects. Impedance spectroscopy further shows that large dielectric constant of the single-crystalline, strained LSMO film is intrinsic in nature while that in the polycrystalline films are mainly extrinsic due to higher amount of GBs. The presence of high dielectric constant value until high frequency range rules out the possibility of “apparent giant dielectric constant” arising from the sample-electrode interface. Coexistence of ferromagnetism and high dielectric constant can be very useful for different microelectronic applications.     

Enhancement of dielectric and electrical properties in BT/SiC/PVDF three-phase composite through microstructure tailoring

A polymer composite with high dielectric permittivity was prepared by embedding silicon carbide (SiC) whisker with an average diameter of 500 nm–1 μm in poly(vinylidene fluoride) (PVDF). However, the high dielectric loss and electrical conductivity of the two-phase composite prohibits its potential applications. Barium titanate (BT) particles with average diameter of 100 nm and 1 μm were incorporated as a third phase to fabricate a three-phase composite. The morphology structure, dielectric and electrical properties before and after the addition of BT particles were investigated. The three-phase composite exhibits largely suppressed dielectric loss and electrical conductivity without sacrificing the high dielectric permittivity, which was extremely hard to be realized for two-phase composite. It is also found that the nano-size BT is more favorable in achieving high dielectric permittivity than the micro-size BT, where their dielectric loss and electrical conductivity are similar. Furthermore, electric modulus analysis confirms the largely suppressed electron conduction process which results in the enhanced dielectric and electrical properties in three-phase composite.     

Dielectric response of an epoxy resin when exposed to high temperatures

Epoxy resins are popular insulators that are used for the encapsulation of integrated circuits and for the fabrication of printed circuits boards. As such, it is important to evaluate their reliability when exposed to an environmental stress. This work reports on the influence of a high-temperature thermal stress (400 ^∘C) on the dielectric properties of an acid-anhydride cured DGEBA resin. Gold/epoxy/gold capacitors are used as a test structure. The studied electrical properties are the dielectric constant and the loss factor in the 10⁻¹ Hz100 kHz range, and the DC resistivity. It is found that cycling the sample for several minutes to temperatures as high as 400 ^∘C has almost no effect on its dielectric properties. It is believed that the gold electrodes prevent the thermo-oxidative degradation of the underlying epoxy. Electrical properties are also studied at high temperatures in the 200 ^∘C-400 ^∘C range. Above 200 ^∘C the DC resistivity is considerably increased, as well as the loss in the low-frequency part of the spectrum (< 1kHz). At high frequencies (> 1kHz) the epoxy maintains good dielectric performances up to 400 ^∘C.     

Polaronic relaxation in Ca2TiMnO6 at low temperatures

Dielectric properties of Ca₂TiMnO₆ (CTM) were systematically investigated. Our results revealed that (1) the observed relaxation does not feature one clear Arrhenius behavior, (2) the peak intensity of the imaginary part of the complex permittivity can be well expressed by a relation similar to the Fermi–Dirac distribution function, and (3) the colossal dielectric behavior of the sample can be well understood based on the framework of universal dielectric response. These features indicate that the dielectric properties of CTM are related to polaron relaxation.     

Dielectric and magnetic properties of Ca(Zn<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>/NiZn ferrite composites

Dense Ca(Zn_1/3Nb_2/3)O₃/NiZn ferrite composites with homogeneously fine microstructures were prepared through conventional solid-state method. The powder XRD patterns confirm the coexistence of the two phases. The dielectric properties in the low frequency range (100 Hz–1 MHz) follow the rule of Maxwell–Wagner interfacial polarization. The dielectric and magnetic properties in the high frequency range (10 MHz–1 GHz) are also reported. The results show that this kind of magnetic–dielectric composites could be used in high-frequency communications for the capacitor-inductor integrating devices such as electromagnetic interference filters and antennas.     

Dielectric and thermal properties of a machinable glass—ceramic at low temperatures

Measurements of the dielectric properties (2–300 K), specific heat (2–20 K), and thermal conductivity (2–22 K) are reported for a mica-containing glass-ceramic which has a machinability in the range from brass to low-carbon steel. The dielectric constant increases with increasing temperature and is field independent for field strengths up to at least 70 kV cm^?1 at low temperatures. Power-supply-limited attempts to measure the dielectric breakdown strength at low temperatures are consistent with the reported strength at room temperature (1.4 MV cm^?1). The thermal properties are similar to fused SiO₂ with two exceptions: the thermal conductivity does not show the ‘knee’ at ～ 10 K typical of amorphous materials, and the specific heat deviates strongly from a T³ law below 3.5 K     

Characterization of Zn doped MgTiO<Subscript>3</Subscript> ceramics: an approach for RF capacitor applications

In the present study the effect of Zn substitution on densification, microstructure, microwave and broad band dielectric properties of MgTiO₃ ceramics were investigated. The (Mg_1?x Zn _x )TiO₃ (x?=?0.01–0.07) ceramics have been prepared by the conventional solid-state reaction method. The sintering conditions were optimized to obtain the best dielectric properties with maximum relative densities. The microwave dielectric properties are heavily influenced by the amount of x concentration. The optimum dielectric properties of ε _r ~ 17.34, Q?×?f _o ~ 274 THz, τ _f ~ -40.3 ppm/^oC is obtained for (Mg_0.95Zn_0.05)TiO₃ ceramics sintered at 1275?°C. The broad band dielectric properties of (Mg_0.95Zn_0.05)TiO₃ ceramics were measured in the frequency range of 1–100 MHz, and temperature range of 133–483 K. Interestingly, the broad band dielectric properties show relaxation behaviour with frequency. The higher temperature dielectric spectrum of (Mg_0.95Zn_0.05)TiO₃ (MZT) ceramics displayed a distinct dispersion, which is shifting towards a lower frequency side. The observed dielectric relaxation behavior is analyzed using Cole–Cole plot. Furthermore, voltage dependent capacitance behavior at different frequencies is studied for the MZT sample, and it’s interesting to note that the capacitance is stable with the variation in voltage. The electrical conductivity study is carried out as a function of frequency and temperature for MZT sample and the activation energy is calculated by using Arrhenius equation, which is found to be 0.07 eV at 10 MHz. The obtained dielectric response of MZT ceramics are suitable for dielectric resonator and type-1 RF capacitor applications.     

Microstructure and properties of ZrO2-, TiO2-doped Ca–Si–B based ceramics

The microstructure, sintering and dielectric properties of ZrO₂-, TiO₂-doped Ca–Si–B based ceramics prepared by solid-phase process were investigated, and the effects of ZrO₂, TiO₂ content on these performances were analyzed. The Ca–Si–B based ceramics without additive (ZrO₂ or TiO₂) showed a high sintering temperature (1,100?°C) and had the dielectric properties: dielectric constant (ε_r) of 8.38, dielectric loss (tanδ) of 1.51?×?10^?3 at 1?MHz, and volume density of 2.47?g/cm³. The addition of ZrO_2, TiO₂ was revealed to lower the sintering temperature of Ca–Si–B based ceramics to 1,000?°C and enhance the sintering and dielectric properties: ρ?=?2.61?g/cm³, ε_r?=?5.85, tanδ?=?1.59?×?10^?4 (1?MHz) with ZrO₂ addition, and ρ?=?2.65?g/cm³, ε_r?=?6.12, tanδ?=?6.4?×?10^?4 (1?MHz) with TiO₂ addition, which are superior to the pure Ca–Si–B. The results show that ZrO₂, TiO₂ as nucleating agents, are conducive to the precipitation of crystals, thus decrease the sintering temperature and improve the dielectric properties of Ca–Si–B based ceramics.