Defect Structure and Electrical Properties of KTaO3

The electrical conductivity and thermoelectric power of KTaO₃ were measured from 900° to 1300°C over a range of oxygen partial pressures. The isothermal electrical conductivity showed a minimum at an oxygen partial pressure corresponding to the transition between p-type and n-type behavior. A point defect model was developed which involved fully ionized potassium and tantalum vacancies, singly and doubly ionized oxygen vacancies, holes, and electrons. The values of all pertinent equilibrium constants were calculated from the experimental data and the nonsimplified neutrality condition was solved to give each of the defect concentrations as a function of temperature and oxygen partial pressure. The calculated conductivity agreed extremely well with the experimental data over the full temperature and oxygen partial pressure range, and the band gap derived from these calculations (3.43 eV) was in excellent agreement with the reported value (3.5 eV).     

Nonstoichiometry in Undoped BaTiO3

Equilibrium electrical conductivity data for large-grained, poly crystalline, undoped BaTiO₃, as a function of temperature, 750° to 1000°C, and oxygen partial pressure, 10⁻²⁰< P _O2<10⁻¹ MPa, were quantitatively fit to a defect model involving only doubly ionized oxygen vacancies, electrons, holes, and accidental acceptor impurities. The latter are invariably present in sufficient excess to control the defect concentrations through the compensating oxygen vacancies, except under the most severely reducing conditions. Singly ionized oxygen vacancies play no discernible role in the defect chemistry of BaTiO₃ within this experimental range. The derived accidental acceptor content has a slight temperature dependence which may reflect some small amount of defect association. Deviation of the conductivity minima from the ideal shape yields a small P _O2-independent conductivity contribution, which is tentatively identified as oxygen vacancy conduction.     

Electrical Properties and Defect Structure of HfO2

The defect structure of high-purity, polycrystalline HfO₂ was investigated by measuring the oxygen partial pressure dependence of the electrical conductivity and the sample weight. From 1000° to 1500°C and above oxygen partial pressures of 10 ⁻⁶, the conductivity is electronic and proportional to p o₂^1/5. The predominant defect is completely ionized hafnium vacancies. At lower oxygen partial pressures a broad shallow minimum in the lower temperature conductivity isotherms indicates the presence of an oxygen pressure independent source of electronic charge carriers. By combining the weight change and conductivity data, mobility values were found to vary from 1.6 × 10⁻³ to 3 × 10⁻⁴ cm²/V-sec. The activation energies for the hole mobilities were calculated to be 0.2 ev above 1300° C and 0.7 ev below this temperature.     

Defect Structure of Ta2O5

Electrical conductivity, thermoelectric power, and weight change were measured for polycrystalline Ta₂O₅ from 900° to 1400°C. The predominant ionic and electronic defects in this temperature range are oxygen vacancies and electrons. The oxygen-vacancy and electron mobilities are 8.1 × 10³exp (−1.8 eV/ k T) and ∼0.05 cm²/V-s, respectively. At O₂ partial pressures near 1 atm, the ionic-defect concentration is essentially fixed by the presence of lower-valence cation impurities, and the total electrical conductivity is predominantly ionic, whereas at low P _o2's the conductivity is electronic and proportional to P P _o2^−1/6.     

Electrical Properties and Defect Structure of ThO2

The electrical conductivity and thermoelectric power of highpurity polycrystalline ThO₂ in thermodynamic equilibrium with the gas phase were measured as a function of temperature from 1000° to 1600°C and as a function of oxygen partial pressure from 1 to 10⁻²² atm. An n -type electronic contribution to the conductivity is observed above 1400°C at low oxygen pressures. An analytic solution is presented for the oxygen pressure dependence of the total conductivity in the mixed ionicelectron hole conduction region observed at higher oxygen pressures. The activation energies for p -type and ionic conduction are 1.0 and 0.9 eV, respectively. The combined conductivity and thermal emf data give a lower limit of ∼6 cm²/V-s for the electron hole mobility.     

Electrical Conduction in Sintered α-Sb2O4

Electrical conductivity and thermoelectric power were measured on sintered α-Sb₂O₄ at 250° to 780°C. Oxygen partial pressure dependence of the conductivity and sign of the Seebeck coefficient showed α-Sb₂O₄ to be a p -type semiconductor above 600°C in the oxygen pressure range of lo⁵ to 10² Pa. A hopping conduction was proposed from very small hole mobility with an activation energy of 18 kJ/mol.     

Electrical Properties of PrFeO3 and Pr2NiO4

The electrical conductivity of PrFeO₃ and Pr₂NiO₄ was investigated at 300° thd 1000°C and at oxygen partial pressures of 1 to 10⁻²⁰ atm and the phase relations and nonstoichiometry of these materials were studied. The results suggest that PrFeO₃ is a semiconductor exhibiting intrinsic behavior at T>300°C and P_o2 >10⁻⁵ atm. The conductivity of Pr₂NiO₄ depends on P_o2 and is thus related to deviations from stoichiometry. These results for Pr₂NiO₃ raise questions about the validity of the suggested semiconductor-to-metal transition model for explaining the electrical properties of La₂NiO₃ and Nd₂Ni0₄.     

Defect Chemistry of Undoped and Acceptor-Doped BaPbO3

The equilibrium defect chemistry of polycrystalline, undoped, and acceptor-doped BaPbO₃ was studied by measurement of the equilibrium electrical conductivity as a function of temperature, 800°–900°C, and oxygen activity, 10⁻¹⁸–1 atm. Both equilibrium electrical conductivity data of undoped and acceptor-doped samples were quantitatively fit to a defect model involving only doubly ionized oxygen vacancies, lead vacancies, holes, and acceptor impurities. The results in low and midrange of oxygen activity are dominated by acceptor impurities, whether deliberately added or not. Only in the highly oxidized condition is the conductivity independent of impurity content, confirming that this region represents the intrinsic behavior of BaPbO₃.     

Electrical Charge Transport in Single-Crystal CaWO4

A combination of ac and dc electrical conductivity measurements was used to characterize the charge transport in single crystals of CaW0₄ which were equilibrated with H₂-H₂O-Ar gas mixtures. Measurements were made from 900° to 1300°C and at P_H2O/P_H2 ratios from 0.02 to 3.0. The ac conductivity at 1000°C varied from 51.4×10⁻⁶ to 5.89×10⁻⁶ mho/cm for P_H2O/P_H2=0.02 and 2.0, respectively; the dc conductivity changed from 51.0±10⁻⁶ to 5.42×10⁻⁶ mho/cm under the same experimental conditions. The partial logarithmic derivative of dc conductivity with respect to P_H2O/P_H2 was −1/2 between 1000° and 1300°C. The results may be described by a paired-defect model of oxygen vacancies and oxygen interstitials (majority defects and minority electrons).     

Effect of Oxide Defect Structure on the Electrical Properties of ZrO2

The defect structure of monoclinic ZrO₂ was studied by measuring the transfer numbers and electrical conductivity as functions of O₂ pressure and temperature. The data suggest a defect structure of doubly ionized oxygen vacancies at low pressures, i.e. <10⁻¹⁹ atm, and singly ionized oxygen interstitials at pressures >10⁻⁹ atm. Zirconia is primarily an ionic conductor below #700°C and an electronic conductor at 700° to 1000°C for 10⁻²²≤P_o2≤1 atm.     

Measurement of Oxygen Diffusion in Dy2O3 and Gd2O3 by Studying High-Temperature Oxidation of the Metals

Studies of the oxidation of Gd and Dy at P _O2's from 10^−0.3 to 10^−14.5 atm and temperatures from 727° to 1327°C indicate both semiconducting and ionic-conducting domains in the sesquioxides formed. At higher temperatures, where dense coarsegrained oxide layers developed, the rate of oxidation in the high- P ₀₂ semiconducting domain yielded oxygen diffusion coefficients in Dy₂O₃ in excellent agreement with literature values derived from oxidation of partially reduced oxide single crystals. Under the same conditions, the oxidation of Gd yielded oxygen diffusion coefficients in cubic Gd₂O₃ which are considerably below literature values for monoclinic single-crystal Gd₂O₃. At lower temperatures, porous scales were formed, and apparent diffusion coefficients derived from oxidation rates show a smaller temperature dependence than the high-temperature data. At low P _O2, the oxides behave as ionic conductors, and metal oxidation rates result in estimates of the electronic contribution to the electrical conductivity of the order of 10⁻⁶ to 10⁻⁷Ω⁻¹ cm⁻¹.     

High-Temperature Hall Measurements on BaSnO3Ceramics

Simultaneous Hall and conductivity measurements were performed in situ between 650° and 1050°C on n-type semiconducting BaSnO₃ceramics. The variation of the Hall mobility and the Hall carrier density as a function of oxygen partial pressure between 10² and 10⁵ Pa and of temperature was investigated. At temperatures below 900°C the conductivity exhibits a dependence on temperature and oxygen partial pressure which is mainly determined by variations of the Hall mobility. Above 900°C most of the significant dependence is due to a variation in carrier density. Furthermore, a simple defect model assuming doubly ionized oxygen vacancies and acceptor impurities is discussed for BaSnO₃.     

Electrical Transport Properties of La2CuO4 Ceramics Processed by the Spark Plasma Sintering

Highly dense La₂CuO₄ ceramics have been prepared by the spark plasma sintering technique. Temperature dependence of electrical conductivity indicates that La₂CuO₄ ceramics sintered at over 875°C exhibit a metal-like behavior, which should be ascribed to the special La₂CuO₄ crystal structure and its correlation splitting of the half-filled d _{x 2− y 2} band. Our experimental data indicate that all of the La₂CuO₄ samples exhibit positive thermoelectric power in the whole measuring temperature range, indicating that the majority of charge carriers are holes. It is desirable to obtain good thermoelectric performance for this system by optimizing the electrical properties and reducing the thermal conductivity.     

Preparation of Ca3Co4O9 and Improvement of its Thermoelectric Properties by Spark Plasma Sintering

The precursor powders of Ca₃Co₄O₉ were synthesized by a sol–gel method. The results of X-ray diffraction and thermogravimetric and differential thermal analyses patterns indicate that pure Ca₃Co₄O₉ powders could be obtained by calcining the precursor at 800°C for 2 h. High dense Ca₃Co₄O₉ ceramic samples (∼99% of theoretical density) were prepared by the spark plasma sintering (SPS) method. Compared with the conventional sintering (CS), the SPS samples exhibit much higher electrical conductivity and power factor which are respectively about 118 S/cm and 3.51 × 10⁻⁴ W·(m·K²)⁻¹. The SPS method is greatly effective for improving the thermoelectric properties of Ca₃Co₄O₉ oxide ceramics.     

Defect Structure and Electrical Conductivity of ThO2-Y2O3 Solid Solutions

Compositions in the system ThO₂-YO_1.5 were coprecipitated as oxalates and converted to oxides. Disks were pressed and sintered in oxygen at 1400° to 2200°C. Densities of the sintered disks were 96 to 98% of theoretical. Solid solutions with the fluorite-type structure were formed up to 20 to 25 mole % YO_1.5 at 1400°C and up to 45 to 50 mole % YO_1.5 at 2200°C. Density data showed that these solid solutions correspond to Th_{1— x} Y _x O_{2—0.5 x} , having a complete cation sub-lattice filled by Th⁴⁺ and Y³⁺ ions, and vacancies in the anion sublattice. The observed increase in electrical conductivity with increase in YO_1.5content is consistent with charge transport by oxygen ions through a vacancy mechanism. Approximately 7 mole % ThO₂ is soluble in YO_1.5 at 2200°C. Density results indicate an anion interstitial structure for the Y₂O₃ phase. Transference number measurements indicate that the electrical conductivities are only partly due to ions.     

Electrical Conductivity of Y2O3 as a Function of Oxygen Partial Pressure in Wet and Dry Atmospheres

The electrical conductivity of polycrystalline Y₂O₃ has been studied as a function of the partial pressure of oxygen (10^–14 to 10⁵ Pa) at 900° to 1500°C in atmospheres saturated with water vapor at 12°C or dried with P₂O₅. Yttria is a p -conductor at high oxygen activities. The p -conductivity increases with increasing P _O2 and decreases with increasing P_H2O. At low oxygen activities the oxide is a mixed ionic/electronic conductor. The ionic conductivity is approximately independent of P _O2 and increases with increasing P _H2O. In the Y₂O₃ samples, excesses of lower-valent cation impurities (in the 10 to 100 mol-ppm range) are the dominating negatively charged defects, and in the presence of water vapor they are compensated by interstitial protons. At high P _H2O levels additional protons are probably compensated by interstitial oxygen ions. At high temperatures (±1100°C) and for high P _O2 and low P _H2O, the protons are no longer dominant, and the lower-valent cations are mainly compensated by electron holes. The electrical conductivity exhibits hysteresis-like effects which are interpreted in terms of segregation/desegregation of impurities at grain boundaries. The mobility of electron holes in yttria at 1500°C is estimated to be of the order of magnitude of 0.05 cm². s^–1. V^–1     

Electrical Conduction in β-Bi2O3 Doped with Sb2O3

Electrical conduction in tetragonal β-Bi₂O₃ doped with Sb₂O₃ was investigated by measuring electrical conductivity, ionic transference number, and Seebeck coefficient. The β-Bi₂O₃ doped with 1 to 10 mol% Sb₂O₃ was stable up to 600°C and showed an oxygen ionic and electronic mixed conduction, where the electron conduction was predominant at low oxygen pressures. The oxygen-ion conductivity showed a maximum at 4 mol% Sb₂O₃, whereas the activation energy for the ionic conduction remained unchanged for 4 to 10 mol% Sb₂O₃-doped specimens. These results were interpreted in terms of the oxygen vacancy concentration and the distortion of the tetragonal structure. The electron conductivity and its oxygen pressure dependence decreased with increasing Sb₂O₃ content. The fact that Sb⁵⁺ is partially reduced by excess electrons in heavily doped β specimens at low oxygen pressures is explained.     

Electrical Properties and Defect Structure of Y2O3

Guarded measurements of the electrical conductivity of high-purity, polycrystalline Y₂O₃ in thermodynamic equilibrium with the gas phase were made under controlled temperature and oxygen partial pressure conditions. Data are presented as isobars from 1200° to 1600°C, and as isotherms from oxygen partial pressures of 10⁻¹ to 10⁻¹⁷ atm. The ionic contribution to the total conductivity, determined by the blocking electrode polarization technique, was less than 1% over the entire range of temperatures and oxygen partial pressures studied. Yttria is shown to be an amphoteric semiconductor with the region of predominant hole conduction shifting to higher pressures at higher temperatures. In the region of p -type conduction, the conductivity is represented by the expression σ= 1.3 × 10³ p O₂^3/16 exp (-1.94/kT). The observed pressure dependence is attributed to the predominance of fully ionized yttrium vacancies. Yttria is shown to be a mixed conductor below 900°C.     

Electronic Conductivity, Seebeck Coefficient, and Defect Structure of LaFeO3

Electronic conductivity and Seebeck coefficients of LaFeO₃ were measured as a function of temperature (1000° to 1400°C) and P ( O ₂) (10⁵ to 10⁻¹³ Pa). Electronic conduction was found to be n-type in the lower P ( O₂ ) range, and p -type in a higher P(O₂) range. The calculated carrier mobilities suggest a hopping-type conduction mechanism. The carrier concentrations were calculated as a function of P ( O₂ ) and the defect structure was described. It was found that the electrical properties of LaFeO₃ are determined not only by the concentration of oxygen vacancies, but also by the La/Fe ratio.     

Electrical Conduction in Single-Crystal and Polycrystalline Al2O3 at High Temperatures

The electrical conductivity and ion/electron transference numbers in Al₃O₃ were determined in a sample configuration designed to eliminate influences of surface and gas-phase conduction on the bulk behavior. With decreasing O₂ partial pressure over single-crystal Al₂O₃ at 1000° to 1650°C, the conductivity decreased, then remained constant, and finally increased when strongly reducing atmospheres were attained. The intermediate flat region became dominant at the lower temperatures. The emf measurements showed predominantly ionic conduction in the flat region; the electronic conduction state is exhibited in the branches of both ends. In pure O₂ (1 atm) the conductivity above 1400°C was σ≃3×10³ exp (–80 kcal/ RT ) Ω⁻¹ cm⁻¹, which corresponds to electronic conductivity. Below 1400°C, the activation energy was <57 kcal, corresponding to an extrinsic ionic condition. Polycrystalline samples of both undoped hot-pressed Al₂O₃ and MgO-doped Al₂O₃ showed significantly higher conductivity because of additional electronic conduction in the grain boundaries. The gas-phase conduction above 1200°C increased drastically with decreasing O₂ partial pressure (below 10⁻¹⁰ atm).