Electron holography study of electric field variations

This paper presents a review of the recent electron holography studies on electric field variation that have been carried out using multifunctional specimen holders. In addition to the standard inner potential analysis, studies on electric field variations around field emission tips have been carried out. The electric field variations caused by ballistic emission in the case of a field emitter made of a TaSi(2) nanowire have been analyzed using electron holography. The charges and electric fields in electrophotographic materials such as toner particles and organic photoconductors have been quantitatively evaluated after equipping the specimen holder with a piezodriving probe to shield the specimens from electron irradiation. The conductivity and electric field variations in the case of Ag-based conductive adhesives have been analyzed by applying an electric current through the holder. Finally, the characteristic charging effect induced by electron irradiation in biological specimens has been studied. It has also been pointed out that under certain experimental conditions, the stationary orbits of electron-induced secondary electrons can be located by electric field visualization.     

High precision phase-shifting electron holography

Today's information-oriented society requires high density and high quality magnetic recording media. The quantitative observation of fine magnetic structures by electron holography is greatly anticipated in the development of such new recording materials. However, the magnetic fields around particles <50 nm have not been observed, because the fields are too weak to observe in the usual way. Here we present a highly precise phase measurement technique: improved phase-shifting electron holography. Using this method, the electric field around a charged polystyrene latex particle (100 nm in diameter) and the magnetic field around iron particles (30 nm in diameter) are observed precisely. A precision of the reconstructed phase image of 2pi/300 rad is achieved in the image of the latex particle.     

Origins of material contrast in scanning ion microscope images

A Monte Carlo simulation of ion-induced kinetic electron emission (KE) was carried out to study the material contrast in scanning ion microscope (SIM) images, i.e. secondary electron (SE) yields decreasing with atomic number Z2 of the target, which is opposite to that for scanning electron microscope (SEM) images. The simulations show that SE yields decrease with increasing Z2 for the targets of Al (Z2 = 13), Cu (Z2 = 29) and Au (Z2 = 79) bombarded by 10 approximately 40 keV gallium (Ga) ions. Details of the SE yield according to the collision partners (i.e. Ga ion, recoiled target-atom and excited electron) clarify the origins of material (or Z2) contrast in the Ga-SIM images. Cause and effect on the material contrast are as follows: the heavier (or slower) collision partner transfers less energy to the excited electrons and leads to a poorer multiplication of other excited electrons in the cascade process. The simulation also predicts that the Ga-SIM images are more sensitive to the outermost target surface than the SEM images. material contrast, atomic number contrast, secondary electrons, secondary electron yield, scanning ion microscope, scanning electron microscope     

绝缘膜负带电时的表面局部电场与二次电子返回特性

为分析IC多层版图扫描电镜(SEM)对准检测所利用的负带电成像原理,采用Mott弹性散射截面和修正的Bethe非弹性碰撞公式,对点照射入射电子在绝缘膜中的散射过程进行了Monte Carlo模拟,得到负带电绝缘物表面的局部电位分布.在此基础上计算了二次电子从表面出射后在局部场作用下的运动轨迹,获得了SEM像的二次电子信号电流.结果表明,在弱负带电条件下,照射点处表面电位越低,返回表面的二次电子就越多,对应的二次电子信号电流越弱.此结果与SEM实验中图像亮度随照射时间的变化规律相符     

双静电四极透镜点聚焦特性分析与仿真

静电四级透镜具有优越的电子光学聚焦成像性能,单一静电四极透镜可实现电子束线聚焦,组合静电四极透镜系统拥有点聚焦的能力。文中对实现点聚焦的双静电四极透镜系统相关参数进行了计算,利用电子光学软件SIMION仿真发现,静电四极透镜之间的畸变场与两端的边缘场引起的像差会严重影响系统聚焦成像质量。仿真分析了系统像差与发射电子初动能的关系。结果表明:系统在保证点聚焦的情况下,增加电子发射初动能可以有效减小系统像差;当电子初动能增加至1105 eV时,最大发散角为2的电子束在聚焦平面上的弥散斑减小至3.2m28m。     

The autoresonant peniotron with a quadrupole interaction circuit

In the autoresonant peniotron interaction, all of the electrons will be able to give almost all of their kinetic energy to an electromagnetic wave, resulting in a conversion efficiency of nearly 100%, if the condition of V_p=C is satisfied in an interaction circuit and the initial velocity ratio of electrons is correctly given as a function of the electron kinetic energy. A quadrupole circuit is proposed in which the above circuit condition is usually satisfied and the RF electric field distribution in a cross section is suitable for the peniotron interaction at the fundamental cyclotron frequency. The design procedure for the test tube with the circuit and some simulation results concerned with the tube's operation are described     

Electron holography on dynamic motion of secondary electrons around sciatic nerve tissues

By means of electron holographic visualization of detailed electric potential distribution around sciatic nerve tissues coated with C and OsO(4), we show that the steady state of these specimens subjected to intense charging with electron irradiation is accompanied with a dynamic motion of collective secondary electrons; the secondary electrons emitted from the coated specimens revolve around the positively charged specimens forming stationary orbits. Further, this study clarified the possibility of the direct visualization of a part of the orbits of the collective secondary electrons without disturbing their motions.     

Analysis of Scanned Probe Images for Magnetic Focusing in Graphene

We have used cooled scanning probe microscopy (SPM) to study electron motion in nanoscale devices. The charged tip of the microscope was raster-scanned at constant height above the surface as the conductance of the device was measured. The image charge scatters electrons away, changing the path of electrons through the sample. Using this technique, we imaged cyclotron orbits that flow between two narrow contacts in the magnetic focusing regime for ballistic hBN–graphene–hBN devices. We present herein an analysis of our magnetic focusing imaging results based on the effects of the tip-created charge density dip on the motion of ballistic electrons. The density dip locally reduces the Fermi energy, creating a force that pushes electrons away from the tip. When the tip is above the cyclotron orbit, electrons are deflected away from the receiving contact, creating an image by reducing the transmission between contacts. The data and our analysis suggest that the graphene edge is rather rough, and electrons scattering off the edge bounce in random directions. However, when the tip is close to the edge, it can enhance transmission by bouncing electrons away from the edge, toward the receiving contact. Our results demonstrate that cooled SPM is a promising tool to investigate the motion of electrons in ballistic graphene devices.     

Investigation of ion-electron emission in the process of reactive ion-beam etching of dielectric thin film heterostructures

This work presents a series of experimental studies to confirm the main theoretical aspects of ionelectron emission and it searches for the possibility of the practical implementation of the operative control method of reactive ion-beam etching processes of different dielectric thin film materials of electronic engineering. The series of experiments was carried out to study the electron emission on the specially formed thinfilm multilayer heterocompositions of Si₃N₄/Si, Ta₂O₅/Al/Si, and Al/TiO₂/Si. The evaluation of the effect of the induced surface potential in the dielectric film on the integral signal of the secondary electrons at reactive ion-beam etching was carried out. The dependence of the emission properties of thin dielectric films on the electric field generated in the dielectric by the surface potential induced by ion beam during reactive ionbeam etching was established. It is noted that the current level of secondary electrons from the surface of dielectric films deposited on the substrates of different materials differ in magnitude; i.e., it is determined by the substrate emission properties. It is shown that the electric field strength arising in the dielectric film under the influence of the induced potential creates the conditions for the emergence of Malter’s emission determined by the properties of its own dielectric and substrate.     

Analysis and simulation of anode heating due to electron field emission

This paper considers the effect of anode heating from energetic electrons produced by field emission. Large electric fields accelerate emitted electrons as they traverse the vacuum gap toward the anode. Electron energy is transferred to the anode by collisions with the lattice. The nonequilibrium transfer of electron kinetic energy to anode thermal energy is examined quantitatively. Results demonstrate that the energy distribution of impinging electrons affects the transmission and dissipation of thermal energy. A Monte Carlo technique is used to resolve the thermalization of electrons and accounts for electron beam strength and spatial distribution. The results indicate that local heat fluxes of the order 10 kW/cm/sup 2/ occur at the anode surface and that heating is a strong function of field strength because of the exponential relationship between applied voltage and current. Under practical conditions, temperature increases of 10/spl deg/C are predicted from a single point emission source.     

Quantum model of electron accumulation at charged boundaries of heavily doped semiconductor films

A new quantum model of electron accumulation at positively charged boundaries of semiconductor films has been developed. It is based on the well-known concepts of quantum confinement of transverse electron motion in a uniform electric field, the role of which is played by the effective field of attraction to positive surface donor centers. Electrons with a surface density equal to the donor concentration occupy the corresponding quasi-discrete states according to the Fermi statistics. At reasonable concentrations all the electrons of the accumulation layer are mainly concentrated at the first quantum-confinement level. Ultra-high built-in fields on the order of the atomic level (10⁸ V/cm) correspond to the onset of filling the third level. The potential profile, which describes the interaction of the accumulation-layer electrons with other charged particles (including holes) is calculated by double integration of the Poisson equation with the electron density in the form of squares of the corresponding segments of the Airy function. Its boundary value—the surface potential—describes the effect of the electron-accumulation layer on the external electric circuit. The obtained dependence of the surface potential on the resulting boundary electric field (including that induced by the built-in charge) is easily transformed into the corresponding capacitance-voltage characteristics.     

Electron heating by a strong longitudinal electric field in quantum wells

The electron heating by a strong longitudinal electric field and the energy losses due to the scattering of nonequilibrium electrons by polar optical phonons in rectangular GaAs/AlGaAs quantum wells are studied. A simple model is suggested to calculate the rate of energy losses due to the scattering of electrons by nonequilibrium optical phonons. Some of the experimental results on the heating of charge carriers in quantum wells are discussed, and it is shown that taking nonequilibrium optical phonons into account significantly improves the agreement between the theoretical and experimental data.     

激光脉冲初始相位对电子辐射的影响

为了研究超短超强椭圆偏振激光初始相位对于高能电子辐射特性的影响, 采用了Lorentz方程与电子能量方程构造高能电子与强激光场的对撞模型的方法, 并使用MATLAB进行数值模拟, 获得了电子的运动轨迹以及激光场空间辐射的功率与能量分布的数据与图像, 对不同的激光初始相位所对应的3维空间辐射特性进行了研究。结果表明, 当激光脉冲撞击电子时, 电子产生辐射, 且辐射功率呈现出双峰形; 高能电子的辐射功率图像在初始相位为0°, 180°和360°时表现为对称型双峰, 而在其它相位下则呈现出非对称型双峰。该结论为超短超强椭圆偏振激光的初始相位3维反探测研究提供了一定的基础。     

同轴数字全息自动聚焦与再现像的融合

由于数字全息采用相干光成像,当再现距离偏离焦点时,再现像的边缘会出现振荡现象,采用传统的清晰度评价函数不能准确实现自动聚焦。通过对再现像进行小波分析可以发现,偏离焦点时的小波变换高频系数的幅值比聚焦时要小得多。针对这一特点,对拉普拉斯算子和小波变换清晰度评价函数进行了改进,将原来利用高频系数之和改为利用聚焦窗口中高频系数的最大幅值为清晰度评价依据。为便于同时观察到数字全息三维空间内的目标,还提出了将不同层面上的再现像进行融合的算法。进行了模拟数字全息自动聚焦及再现像融合实验和用数字全息观察生物标本的实验。实验结果表明,改进后的清晰度评价函数可以准确实现数字全息的自动聚焦;提出的融合算法可以将数字全息再现后得到的一系列再现像融合到一幅图片中。     

Measurement of electric potential distributions around FEG-emitters by electron holography

An evaluation technique for field emission guns (FEG-emitters) was established by using electron holography. For performing electron holography under an applied voltage, a specimen holder with the capabilities of three-directional motion as well as voltage application was developed. An unused Schottky emitter and a used emitter that had failed after operating for about 10,000 h were selected for this study. By visualizing the electric potential distributions around the emitters, it was clarified that a change in the edge shape of the emitter led to the change in the strength of the electric field. The observations revealed that electron holography can be applied to evaluate the performances of the various emitters.     

Characterization of charging in semiconductor device materials by electron holography

Quantitative analysis of electrostatic potential in semiconductor device samples using off-axis electron holography in the electron microscope is complicated by the presence of charged insulating layers. Preliminary results indicate that the behavior of p-type material near the Si-insulator interface may differ from that of n-type if the insulator is charging. Coating one side of the sample surface with carbon usually eliminates charging effects. Holographic phase measurements on thin silicon oxide film at liquid nitrogen temperature indicates that the maximum electric field near the edge of an charged region is 18 MV cm(-1), on the order of the breakdown voltage.     

Analysis of magnetization in nanocomposite Nd4.5(Fe,Cr)77B18.5 by electron holography and simulation

Magnetization distribution in nanocomposite Nd4.5(Fe,Cr)77B18.5 was studied by electron holography and computer simulation. In order to understand the detailed magnetization distribution, the magnetic flux distribution was calculated taking into account the magnetic charge or the stray field on the basis of magnetization models consisting of small magnetic dipoles and was compared with that in reconstructed phase images experimentally observed. Through the comparison, the characteristic feature in the distribution of the magnetization distribution in the nanocomposite magnetic materials was clarified, and the distribution was found to well correspond to their magnetic properties. It is pointed out that for understanding magnetization, the interpretation of reconstructed phase images should be done through computer simulation just as the analysis of high-resolution electron microscope images. Eventually, it was demonstrated that electron holography with computer simulation is quite useful to analyze detailed magnetization distribution in nanocrystalline magnetic materials at the nanometer scale.     

Simulation of <Emphasis Type="Italic">e</Emphasis>-beam penetration through multilayer structures

Using developed simulation in discrete loss approximation Monte-Carlo program, we carried out analysis of the energy spectra of secondary electrons of multilayered structures. The possibility of determination of subsurface layer parameters using energy spectra of secondary electrons is shown as a way to avoid time-consuming Monte-Carlo simulations for some cases. The text was submitted by the authors in English.     

压缩感知相移数字全息术

相移数字全息图用传统数字再现可以消除零级像与共轭像,但数字全息术记录的全息图及数字再现像的分辨率被CCD的分辨率所限制.将新兴的压缩感知算法用于数字全息图的稀疏重建,以实现由部分全息图数据得到高分辨率再现像.分析了压缩感知用于重建数字相移全息图的原理,并利用该算法对计算机模拟的相移全息图进行了重建.结果表明,压缩感知算法能够对数字全息图稀疏重建,利用50％的部分全息图数据重建出了较高质量的再现像,并消除了零级像和共轭像.当选用合适的观测器如数字微反射镜器件或随机位相片实现随机观测矩阵时,可以实现单像素成像,从而突破记录全息图CCD分辨率的限制.     

扫描电子显微学中二次电子发射过程的蒙特卡洛模拟

利用蒙特卡洛模拟固体中电子散射轨迹的计算方法，系统地研究了扫描电镜中二次电子信号的发射过程。该模拟电子与固体相互作用的蒙特卡洛模型包含了级联二次电子产生的过程，并且采用光学介电函数方法描述电子的能量损失和相伴的二次电子激发。由于模拟计算可以给出背散射电子和二次电子的绝对产额，以及它们随加速电压和样品的原子序数的变化关系，因此可以用于模拟元素衬度和形貌衬度像。还计算得到了关于二次电子产生和发射的其它分布，并与实验结果作了比较。