微立方结构基底上生长碳纳米管薄膜的强流脉冲发射特性

采用酞氰铁高温热解方法在具有微立方结构的化学镀镍硅基底上生长了碳纳米管薄膜(Si/Ni-CNTs),并在20GW脉冲功率源系统中采用二极结构对其强流脉冲发射特性进行了研究。研究结果表明,在单脉冲发射条件下,随脉冲电场峰值的增大,Si/Ni-CNTs薄膜的发射电流峰值呈线性增加,当宏观场强达到31.4 V/μm时,发射脉冲电流的峰值可达到14.74kA,对应的发射电流密度1.23kA/cm2,在相同峰值,连续多脉冲情况下,碳纳米管薄膜具有良好的发射可重复性,且发射性能稳定。     

脉冲激光沉积方法生长硅基ZnO薄膜的特性

用脉冲激光沉积法(PLD)在n型硅(111)平面上生长ZnO薄膜.X射线衍射(XRD)在2θ=34°处出现了唯一的衍射峰,半高宽为0.75°;傅里叶红外吸收(FTIR)在414.92cm-1附近出现了对应Zn-O键的红外光谱的特征吸收峰;光致发光(PL)测量发现了位于370和460nm处的室温光致发光峰;扫描电子显微镜(SEM)和选区电子衍射(SAED)显示了薄膜的表面形貌以及晶格结构.利用PLD法制备了具有c轴取向高度一致的六方纤锌矿结构ZnO薄膜.     

强流脉冲电子束粘结层表面改性对热障涂层热震及残余应力的影响

采用等离子喷涂技术在GH4169镍基高温合金表面制备CoCrAlY粘结层,利用电子束蒸发镀膜在CoCrAlY表面蒸镀纳米铝膜并使用强流脉冲电子束熔敷纳米铝膜进行表面改性,使用APS技术在CoCrAlY表面沉积陶瓷层制备改性热障涂层。对粘结层蒸镀铝膜表面改性涂层和普通涂层分别进行热震实验、结合强度测试和残余应力分析。实验发现,在1 050 ℃高温加热后10 ℃水淬的冷热循环条件下,改性涂层的抗热震性能优于普通涂层;热震过程中改性涂层和普通涂层热生长氧化物内产生的残余应力均为压应力,且随热震次数的增加而增大,改性涂层热生长氧化物内残余压应力增长速度小于普通涂层。拉伸结果显示,普通涂层的断裂属于混合断裂,而改性涂层断裂基本发生在陶瓷层和薄膜胶界面,未发现层间断裂。改性涂层结合强度优于普通涂层。实验结果表明,采用电子束蒸发镀膜和强流脉冲电子束技术相结合对粘结层进行熔敷铝膜的表面改性处理,可以显著提高热障涂层冷热循环服役寿命。     

缓冲层对碳纳米管强流脉冲发射特性的影响

为了研究缓冲层对碳纳米管薄膜(CNTs)强流脉冲发射特性的影响,采用酞菁铁高温热解方法分别在镀镍和不镀镍硅基底上生长了碳纳米管薄膜(Ni-CNTs和Si-CNTs),镍层采用化学镀方法制备,强流脉冲发射特性采用二极结构在单脉冲下进行测试。实验发现,通过引入镍缓冲层,CNTs的强流脉冲发射能力显著增强。在峰值为～10.4 V/μm的脉冲场强下,平均开启电场强度从Si-CNTs的5.0V/μm下降到Ni-CNTs的4.3V/μm,而峰值发射电流和电流密度从Si-CNTs的70A和3.5 A/cm2升高到Ni-CNTs的162 A和8.1 A/cm2,Ni-CNTs的峰值电流比Si-CNTs提高了1.3倍。     

硅基PZT热释电薄膜湿法刻蚀技术研究

通过对不同组合比的PZT薄膜湿法刻蚀技术研究,成功地配制出两种不同的刻蚀液,主要以HF、NH4F、HCl、NH4ClEDTA、HNO3为原料,NH4F、NH4Cl和EDTA的引入,有效地实现了刻蚀速率的可控性,并对PZ0.15R0.85、PZ0.3T0.7、PZ0.5T0.5和P1.1Z0.3T0.3四种薄膜进行微图形化研究,分析了刻蚀液对各种成份的刻蚀机理,通过实验,得到了分别刻蚀四种薄膜的刻蚀液的最佳配比,并对四种薄膜的刻蚀速率进行了研究。     

脉冲电弧源的发射特性建模

脉冲电弧源是脉冲电弧离子镀方法制备薄膜的重要部件，其发射特性是影响薄膜均匀性的重要因素，本文从理论出发，建立脉冲电弧源发射特性的数学模型，编程计算得到理论的均匀性曲线，与实际的沉积薄膜厚度的均匀性对比，结果表明：脉冲电弧源的蒸发特性可以等效于多个面源的叠加，每一个面源发射的离子密度空间分布符合余弦定律。     

热退火对射频反应溅射氮化铝薄膜场电子发射的影响

以氮气为反应气体;用射频反应溅射方法制备了ＡＩＮ薄膜,结合ＸＰＳ和ＸＲＤ表征考察了热退火后处理对样品场电子发射性能的影响．实验表明,热退火是改善样品场发射稳定性的有效途径,样品经７００℃退火后,发射电流的涨落从未退火前的１３５μＡ下降到２０μＡ;并且发射的开启电压、发射电流的涨落和滞后等对退火温度表现出强烈的依赖性．文中认为,退火处理造成了薄膜结构的变化,引起表面电子亲和势特性以及电导特性的改变,进而影响了其发射特性     

喷雾热解法在硅衬底上生长定向碳纳米管阵列(英文)

以向日葵油的甲基酯为碳源,二茂铁为催化剂前驱体,Ar为载气,通过喷雾热解法在硅衬底上合成定向碳纳米管阵列。结果表明,在硅衬底上原位形成Fe催化剂纳米颗粒。由拉曼光谱、透射电镜图和X-射线衍射谱图显示所制定向碳纳米管阵列具有较好的石墨化程度,其直径为1 0～3 0 nm,管壁约为1 0 nm。所制定向碳纳米管阵列中残留的催化剂含量可以忽略。     

超声喷雾热解法制备MgxZn1-xO薄膜及其性能研究

采用超声喷雾热解法在石英玻璃衬底上生长出不同组分的宽禁带MgxZn1-xO薄膜(z=0、0.08、0.16、0.25).通过X射线衍射(XRD)、扫描电子显微镜(SEM)和分光光度计等分析测试手段对MgxZn1-xO薄膜的晶体结构、透光性及禁带宽度进行了研究.结果表明,随着Mg含量的增加,MgxZn1-xO薄膜仍然保持着ZnO的纤锌矿结构,没有生成MgO相,Mg可以有效地溶入ZnO的晶格中.MgxZn1-xO薄膜具有良好的透光性,在可见波段的光透过率达85%以上;此外,随着Mg含量的增加,MgxZn1-xO薄膜的吸收边出现蓝移现象,禁带宽度从3.30eV增大到3.54eV.     

硅基氧化铱薄膜的脉冲激光沉积及其微观结构研究

采用脉冲激光沉积技术，在Si（100）基片上制备了高致密的氧化铱（IrO2）薄膜，研究了不同沉积温度对薄膜结构的影响。利用X射线衍射（XRD）、拉曼光谱、扫描电镜（SEM）和原子力显微镜（AFM）对制备的IrO2薄膜进行了表征。结果表明：在20Pa氧分压，250℃～500℃范围内，得到的薄膜为多晶的IrO2物相，其晶粒尺寸和粗糙度随着沉积温度的升高而增加；所得到的IrO2薄膜表面粗糙度低，厚度均匀，与基片结合良好。     

Nanosecond laser pulse-induced electron emission from multiwall carbon nanotube film

Electron emission from multiwall carbon nanotube film induced by the irradiation of the second, third and fourth harmonics of a Q-switched Nd:YAG laser was studied as a function of applied voltage and irradiation energy. The experimental result at 266 nm showed a one-photon field-assisted photoemission mechanism at low laser energy and a thermal contribution at higher energy. At 355 and 532?nm wavelengths, the emission seems to be due to thermal assisted field emission.     

Nitrogen-doped carbon nanotube arrays grown on graphene substrate

Nitrogen-doped carbon nanotube (N-doped CNT) arrays have been synthesized on graphene substrate by chemical vapor deposition process, in which iron nanoparticles (NPs) assembled on the graphene sheet were generated in situ from the reduction of Fe₃O₄ NPs/reduced graphene oxide (RGO) and were used as catalyst. The morphology and structure of the N-doped CNT arrays were investigated by field emission scanning electron microscope and high-resolution transmission electron microscope. The N-doped CNTs were bamboo-shaped and the density can be controlled by modulating the density of catalyst NPs on RGO sheets. The concentration and incorporation of nitrogen were studied by elemental analysis, X-ray photoelectron spectroscope and Raman analysis, and the results showed that the nitrogen content was around 3 wt.%. Because of the good conductivity of graphene structure, N-doped CNT arrays grown on graphene substrate may be promising candidates as noble metal-free electrodes for oxygen reduction reaction in the future.     

Field emission of carbon nanotubes grown on nickel substrate

Carbon nanotubes (CNTs) have been synthesized directly on the electrically conducting nickel substrate without additional catalyst. Field emission properties of the as-prepared sample were characterized using parallel plate diode configurations. It was observed that the field emission qualitatively follows the conventional Fowler–Nordheim (F–N) theory from the straight line of ln(I/V²) versus 1/V plot at the high applied field region. The uniformity and stability of the electron emission have also been examined. The low electron turn-on field (E_to) and high emission current density indicates the potential applications of this new CNT-based emitter.     

Effect of gas pressure on electron field emission from carbon nanotube forests

This article quantifies the effect of the operating pressure of the H2 + C2H4 gas mixture on the current density and threshold voltage of the electron emission from dense forests of multiwalled carbon nanotubes synthesized using thermal catalytic Chemical Vapor Deposition under near atmospheric pressure process conditions. The results suggest that in the pressure range of interest 400-700 Torr the field emission properties can be substantially improved by operating the process at lower gas pressures when the nanostructure aspect ratios are higher. The obtained threshold voltage approximately 1.75 V/microm and the emission current densities approximately 10 mA/cm2 offer competitive advantages compared with the results reported by other authors.     

Synthesis of large-area single-walled carbon nanotube films on glass substrate and their field electron emission properties

Large-area and homogeneous single-walled carbon nanotube (SWCNT) films have been deposited via arc discharge directly on glass substrate coated with a layer of indium tin oxide film. The characterization, by means of electron microscopy and Raman spectroscopy, shows that the as-grown films are uniformly woven and consist of SWCNT with diameters ranging from 0.82 to 1.15 nm. As a cathode material, the field emission test indicates the films have low turn-on field of ∼1.2 V/μm at 10 μA/cm² emission current, and high emission intensity causing luminance of about 7000 cd/cm² with fine uniformity. The best performing sample exhibits a constant degradation of less than 3% per hour at an emission current of around 1 mA. Measuring with the high voltage (2000 V) on the films for 2.0 h increased the field enhancement factor from 4500 to 5400 at the high field region. The results are of significance to the development of field emission display using nanoemitters.     

Preferred growth of epitaxial TiN thin film on silicon substrate by pulsed laser deposition

Epitaxial TiN thin films on silicon substrates were prepared by pulsed excimer laser (KrF, 34 ns) ablation of a hot-pressed TiN target in nitrogen gas atmosphere. X-ray diffraction (XRD) showed that the preferred orientations of TiN thin films did not change with substrate temperatures, nitrogen gas pressure and film thickness; however, they did change with the orientations of substrates. The epitaxial orientation relationships between high-quality epitaxial TiN thin films and silicon substrates [2 4 2] TiN [2 4 2] Si, (1 1 1) TiN(1 1 1) Si and [3 1 1] TiN [3 1 1] Si, (1 0 0) TiN(1 0 0) Si. The full-width at half-maximum (FWHM) of the rocking curve of XRD and the minimum channelling yield of Rutherford backscattered spectroscopy (RBS) of the epitaxial TiN thin film were estimated to be 0.3 ° and 7.3%, respectively, indicating excellent crystalline quality of the grown film. X-ray photoelectron spectroscopy confirmed that the binding energies of Ti 2p 3/2 and N 1s core levels in epitaxial thin film were 455.2 and 397.1 eV, respectively, corresponding to those of TiN bulk. By calibrating the RBS spectra, the chemical composition of TiN thin films was found to be titanium-rich. The typical surface roughness of TiN thin film observed by scanning probe microscopy was about 1.5 nm. © 1998 Chapman & Hall     

Formation of free-standing carbon nanotube array on super-aligned carbon nanotube film and its field emission properties

Flexible and free-standing well-aligned carbon nanotube arrays have been synthesized on super-aligned carbon nanotube films. The combined structure of the carbon nanotube array and carbon nanotube film was formed during chemical vapor deposition on a quartz substrate which had previously been covered with a super-aligned carbon nanotube film. It was found that the growing carbon nanotube array could support up the super-aligned carbon nanotube film entirely, and the top of the array became densely entangled with the super-aligned carbon nanotube film. The carbon nanotube array with the super-aligned carbon nanotube film could be easily peeled off from the quartz substrate as a whole, giving a flexible and free-standing structure with good mechanical properties. The bottom of the array was also exposed after being peeled off and was used as a field emitter. The combined structure of the carbon nanotube array with the carbon nanotube film allowed adsorbent-free field emission by passing a heating current through it. Furthermore, due to the fast thermal response of the structure and the long time needed for re-adsorption of adsorbates in vacuum, it was found that pulsed heating with a 10% duty ratio was sufficient for adsorbent-free field emission. The heating power necessary to sustain the adsorbent-free state can be lowered in this way.

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Nd-doped fluoride film grown on LiYF4 substrate by pulsed laser deposition

The realization of a monocrystalline nanofilm of Nd³⁺-doped fluoride on LiYF₄ substrates by pulsed laser deposition is reported. The film was obtained by laser ablation with 355 nm photons of a bulk LiYF₄ crystal doped with Nd³⁺ ions at 1.5% atomic concentration. The measurements of the sample thickness obtained by an in situ interferometric technique, and the film optical characteristics analyzed via laser induced fluorescence spectroscopy upon UV and IR excitation, are presented. Lifetime measurements of the fundamental Nd³⁺ ion transition in the film were also performed. All the results were compared with those obtained in a Nd³⁺:LiYF₄ bulk crystal. The emission spectra of the deposited film following IR excitation seem to indicate the obtained deposit is Nd³⁺:YF₃.     

低能电子束制备硅基纳米薄膜微结构研究

本文提出了一种新颖的结合自组装技术和电子束直写曝光以及选择性化学沉积制备图案化薄膜方法。利用X-射线光电子能谱（XPS），扫描电子显微镜（SEM），透射电子显微镜（TEM）紫外可见光谱仪（Analytic Jena AG）进行了表征。结果表明该方法取得了选择性较好的图案化金薄膜微结构图形。文中对胶体金纳米颗粒尺寸的选择以及金薄膜图案的粘附性能也进行了探讨。该方法有望应用于微／纳电子工业中。     

The influence of organophilic clay on field electron emission uniformity and lifetime of screen printed carbon nanotube film

The effect of adding clay, modified by a silane coupling agent, into the carbon nanotube (CNT) paste on the field electron emission and a lifetime of screen printed CNT film was studied. The composition of organophilic clay and CNTs was characterized by a combination of X-ray diffraction, and scanning electron microscopy. The incorporation of clay improved the dispersivity, adhesiveness, and conductive networking of paste, therewith enhancing the field emission's uniformity and stability. The improvement of this gas barrier on the CNT film by clay loading prevents emission degradation.