Roles of humidity and heat treatment temperatures on YBa2Cu3O7-x coated conductors by trifluoroacetic acid-metal organic deposition process

YBa₂Cu₃O_7−x(YBCO) films were fabricated on an LAO substrate using the trifluoroacetic acid-metal organic deposition (TFA-MOD) method and the effects of the humidity and heat treatment temperatures on the microstructure, degree of texture and critical properties of the films were evaluated. In order to understand the combined effects of the humidity and the calcining and firing temperatures on critical properties, heat-treatment was performed at various temperatures with the other processing variables fixed. The films were calcined at 400–430 and fired at 750–800 °C in a 0–12.1% humidified Ar-O₂ atmosphere. The texture was determined by pole-figure analysis. The amount of the BaF₂ phase was effectively reduced and a sharp and strong biaxial texture was formed under a humidified atmosphere, which led to increased critical properties. In addition, the microstructure varied significantly with firing temperature but changed little with calcining temperature. The highest I_C of 40 A/cm-width, which corresponds to J_C value of 1.8 MA/cm², was obtained for the films fired at 775 (in 12.1% humidity) after calcining at 400–430 °C. It is likely that °C the highest I_C value is due to the formation of a more pure YBCO phase, c-axis grains, and a denser microstructure.     

YBa2Cu3O7和YBa2Cu3O6能隙结构的计算

用电子密度泛函方法（DFT）,系统计算了高温超导体YBa2Cu3O7单胞的能隙随温度变化（5K～300K）的规律.计算结果表明,其超导能隙值2△（T）在101meV量级;并在超导临界温度点（Tc=93 K）附近,有超导能隙不为零的极小值;当温度超过Tc时,YBa2Cu3O7有赝能隙存在,且赝能隙随温度升高至T^＊=120K时,达到极大值;当温度超过T^＊时,赝能隙又有明显减小趋势.用DFT方法对YBa2Cu3O6单胞的能隙进行了计算,发现其能隙值是10^2 meV量级,表明它具有半导体能级特征,因而是非超导体.     

TBa2Cu3O7能隙及低温物性的第一原理计算

采用密度泛函理论(DFT)中的BLYP和ROBLYP交换.相关泛函,基于YBa2Cu3O7单晶胞即39个原子组成的团簇模型,计算了其能隙、磁化系数、电子比热及比热系数随温度的变化关系,并分析了在不同温度下其最高占据态的分子轨道图.结果表明,YBa2Cu3O7存在3个特征温度Tc、T*和T0,在正常态存在赝能隙,并且其超导能隙和赝能隙均具有d波对称性.     

EFFECTS OF Pb COMPOUND ADDITIVES ON THE PROPERTIES OF YBa2Cu3O7-δ

The melting temperature and critical transition temperature T, of YBa2Cu3O7-δ with deferent content additives of PbO and BaPbO3 were studied. When PbO was doped in YBa2Cu3O7-δ the melting temperature of YBa2Cu3O7-δ was reduced, however its superconductivity was weakened. From the XRD pattern of the sintered mixture of YBa2Cu3O7-δ and PbO, it was known that there was a reaction between YBa2Cu3O7-δ and PbO, and the product was BaPbO Hence different contents of BaPbO3 (10mass%, 20mass% and 30mass% ) were added in YBa2Cu3O7-δ It was proved that there were no reactions between YBa2Cu3O7-δ and BaPbO3.And the superconductivity of the mixtures was much better than that of the samples with PbO additive.     

EFFECTS OF Pb COMPOUND ADDITIVES ON THE PROPERTIES OF YBa2Cu3O7-δ

The melting temperature and critical transition temperature Tc of YBa2Cu3O7-δ with deferent content additives of PbO and BaPbO3 were studied. When PbO was doped in YBa2Cu3O7-δ the melting temperature of YBa2Cu3O7-δ was reduced, however its superconductivity was weakened. From the XRD pattern of the sintered mixture of YBa2Cu3O7-δ and PbO, it was known that there was a reaction between YBa2Cu3O7-δ and PbO, and the product was BaPbO3. Hence different contents of BaPbO3 ( 10mass%, 20mass% and 30mass% ) were added in YBa2Cu3O7-δ. It was proved that there were no reactions between YBa2Cu3O7-δ and BaPbO3. And the superconductivity of the mixtures was much better than that of the samples with PbO additive.     

{001}LaAlO_3衬底上沉积YBa_2Cu_3O_（7-x）薄膜的HRXRD研究

采用脉冲激光沉积技术（PLD）在{001}LaAlO3（LAO）衬底上生长YBa2Cu3O7-x（YBCO）薄膜,并通过极图、摇摆曲线以及倒易空间图谱等高分辨X射线衍射技术（HRXRD）对其微结构进行表征。结果表明,YBCO薄膜的晶粒取向主要为{001}YBCO//{001}LAO,〈100〉YBCO//〈100〉LAO,但还有2%的{001}YBCO//{001}LAO,〈110〉YBCO//〈100〉LAO取向。摇摆曲线结果表明,YBCO的面外取向有一定的漫散（宽度为0.75°）;薄膜面内存在90°±0.65°〈110〉孪晶畴结构,主要是由四方到正交的相变过程中较大的局部应力以及〈100〉和〈010〉方向应力差异引起的。     

YBa2Cu3O7能隙及低温电子比热容的第一性原理计算

用电子密度泛函方法(DFT)对YBa2Cu3O7晶胞39个原子模型系统计算了其能隙随温度的变化规律,并在能隙计算基础上,应用电子比热的双极化和热激发的极化子模型计算了电子比热及其系数随温度的变化关系.计算结果表明:超导能隙在超导临界温度点93 K附近有不为零的极小值;能隙曲线中的几个转折温度点依次分别与Tc,T*和T0相对应;在Tc～T*温度范围,超导态消失,但有反铁磁自旋相干引起的自旋能隙的存在;在T*～T0温度范围,有周期性条纹相产生的电子密度波引起的能隙的存在;在T=T0,电子比热系数发生了从增大到减小的转折变化.     

The effect of BaZrO3 addition on melt-processed YBa2Cu3O7–x superconductors

The effects of BaZrO₃ addition on the thermal behavior and microstructure of YBCO superconductors have been investigated. The differential thermal analysis indicates that the peritectic decomposition temperature of YBCO precursor powder is not change when BaZrO₃ is doped. The solidification temperature of YBCO changes with increasing of BaZrO₃ addition, thus the window of solidification temperature is affected. The results of scanning electron microscopy show that the BaZrO₃ particles are accumulated along the growth boundary, which result in the constitutional segregation of YBCO. The pushing–trapping theory is used to explain the phenomenon of segregation in the YBCO matrix.     

Improvement of epitaxy and crystallinity in YBa2Cu3Oy thin films grown on silicon with double buffer of ECO/YSZ

A novel double buffer of Eu2CuO4 （ECO）/YSZ （yttrium-stabilized zirconia） was developed for growing YBa2Cu3Oy （YBCO） thin films on Si substrates. In these films, the severe reaction between Si and YBCO is blocked by the first YSZ layer, whereas, the degradation of crystallinity and superconductivity in the grown YBCO is greatly improved by the second ECO layer. Such an ECO material possesses a very stable 214-T＇ structure and excellent compatibilities with YBCO and YSZ. The result shows that the epitaxy and crystallinity of YBCO deposited on Si could be considerably enhanced by using the ECO/YSZ double buffer. The grown films are characterized by high-resolution X-ray diffraction, grazing incidence X-ray reflection, and transmission electron microscopy （TEM）, respectively. It is found that well defined interfaces are formed at YBCO/ECO/YSZ boundaries. No immediate layer could be seen. The defect density in all grown layers is kept at a lower level. The YBCO film surface turns out to be very smooth. These films have full superconducting transitions above 88 K and high current carrying capacity at 77 K. The successful growth of highly epitaxial YBCO thin films on silicon with ECO/YSZ buffer, demonstrate the advantages of such a double buffer structure.     

制备方法和助熔剂对BaAl2B2O7：Eu^3＋光谱特性的影响

采用固相法和水热法制备了BaAl2B2O7：Eu^3＋系列发光体，研究了制备方法对其光谱特性的影响、助熔剂对发光强度和微观形貌的影响、激活剂浓度对发射强度的影响。研究表明；固相法制备的发光体Eu^3＋存在621nm的^5D0→^7F2强发射和772nm的^5Do→^7F5．6弱发射，通过对多种助熔剂优选NaF为最佳的助熔剂，掺杂NaF的发光体仅在772nm的发射大幅度增强，说明助熔剂对发射光谱的特定波长有突出的增强作用：当掺杂Eu^3＋浓度较低时和水热法制备的荧光体在455nm存在Eu^2＋的4f^65d^1→^8S7／2强发射；此外还研究了BaAl2B2O7：Eu^3＋中Eu^2＋→Eu^3＋的能量传递。     

Al2O3/Cu复合材料强化机理研究

采用内氧化法制备了Al2O3／Cu复合材料，进行了高温电子拉伸实验，并通过微观组织观察，分析了该复合材料的强化机理。拉伸实验结果显示：Al2O3／Cu复合材料不仅室温强度很高，而且高温时仍保持较高的强度。微观组织观察分析表明：细小的Al2O3颗粒的弥散分布是该复合材料具有高强度的主要原因，表现在：Al2O3颗粒存在能够抑制Cu基再结晶的进行；Al2O3颗粒的存在阻碍晶界亚晶界运动，从而阻碍晶粒长大；Al2O3颗粒的阻碍位错运动，增加位错密度；Al2O3颗粒的存在提高材料的蠕变抗力。     

Microstructures and properties of 1.0%Al2O3/Cu composite treated by rolling

The 1.0%Al2O3/Cu （mass fraction） composite was prepared by hot pressing （HP）, then treated by rolling to get a full density. The microstructures and the micro area element distribution of the composite were analyzed by SEM. The density, electric conductivity and tensile strength were also investigated. The experimental results show that the alumina particles are more dispersed and become smaller through a single-pass rolling. The pore existing in the composite is eliminated or closed under the rolling force. The relative density increases from 98.4% to 99.2%. The electric conductivity increases from 88.9%IACS to 91.2%IACS. The tensile strength is increased by 47% from 300 MPa to 440 MPa.     

纯铜Al_2O_3表面弥散强化的研究

用渗铝—内氧化技术进行了纯铜Ａｌ２Ｏ３表面弥散硬化。研究了渗剂铝含量对渗层铝浓度分布的影响和纯铜渗铝内氧化后的显微组织及性能。结果表明：在本实验条件下，渗层表面铝浓度与渗剂中铝含量相当。用内氧化技术可在渗铝的表层生成弥散细小的Ａｌ２Ｏ３，而且其数量可控。     

Al2O3/Cu复合材料的内氧化制备及性能研究

采用高能球磨制备出亚稳态的Cu-1%Al（质量分数）合金粉,再将Cu2O粉与其一起进行高能球磨,然后将复合粉末压坯在N2保护炉中同时进行氧化和烧结,制备出Al2O3/Cu复合材料。分析了分别采用湿法球磨和干法球磨时的合金化效果,讨论了模压压力对材料性能的影响。结果表明,对于Cu-Al混合粉来说,采用湿法球磨容易产生分层,采用干法球磨具有良好的合金化效果;在本试验条件下,750MPa为最佳的模压压力,但烧结后材料的电导率还是偏低,因此有必要进行后续的处理来进一步提高材料的性能。     

Al_2O_3/Cu复合镀层的微观结构及其生长模型

电沉积Ａｌ２Ｏ３／Ｃｕ 复合镀层的光镜及ＳＥＭ 分析结果表明,复合镀层的组织结构受极板放置方式、电流密度和施镀时间的影响;电沉积初期以平面生长和螺旋生长两种方式进行,并以平面生长为主,形成胞状形态;沉积后期转向基体金属的择尤生长,形成脊状生长形态。     

TiAl表面液相等离子沉积Al_2O_3膜的结构与性能

在TiAl合金表面以等离子液相沉积方法制备了Al2O3膜。扫描电镜观察膜为多孔结构,沉积膜的内部孔的直径约30μm,表面孔的直径约有10μm;多孔结构的膜硬度约为1200 HV;沉积膜的主要相成分是γ-Al2O3及少量的α-Al2O3;显微划痕实验结果表明膜层与基体之间有较好的结合力,划痕超声信号出现在15 N压力附近;利用SEM及EDS能谱分析膜层破裂机制,膜层的开裂主要是由于基体在压力作用下的变形导致。     

Ti_2AlN-La_2O_3/Cu复合材料的界面反应与性能

采用粉末冶金法制备了以Ti2AlN和La2O3为增强相的新型铜基复合材料。研究了Ti2AlN与Cu界面反应及其对复合材料性能的影响。结果表明:Ti2AlN颗粒化学镀铜后改善了铜与Ti2AlN的界面结合情况,形成了宽度为20 nm左右的过渡区。在880~940℃的烧结温度范围内,增强相与基体的界面发生化学反应,生成了Cu(Al)固溶体与TiNx,在显著提高复合材料强度的同时,降低材料的导电性。另外,La2O3纳米颗粒分布在铜基体内,对材料起到弥散强化的作用。     

Reaction thermodynamics and kinetics on in-situ Al2O3/Cu composites

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机械合金化结合内氧化法制备Al2O3/Cu复合材料

Al2O3/Cu复合材料具有高的强度和高的导电性及优良的抗电弧性能,广泛应用于电子封装材料、电极和电触头材料。采用机械合金化制备亚稳态的Cu-Al-Cu2O合金粉末,经压制成型后,采用新型内氧化工艺进行烧结处理,得到高强度高导电的Cu/Al2O3复合材料。结果表明:机械球磨96h,Al原子已完全固溶于Cu的晶格中。经1183K内氧化处理4h试样组织均匀致密,Al2O3颗粒弥散分布在铜基体上,其硬度高,电导率高。     

稀土La对Al2O3/Cu复合材料组织与性能的影响

利用机械合金化法结合放电等离子烧结制备Al2O3/Cu铜基复合材料,采用XRD、SEM、硬度、抗拉强度和电导率等测试研究La含量对Al2O3/Cu复合粉末和烧结材料组织及性能的影响。结果表明:添加0.05%的稀土La有利于机械合金化过程中Cu晶粒的细化和Al2O3颗粒的弥散分布,从而提高烧结材料的显微硬度和抗拉强度。烧结材料的导电率随着La含量的增加先升后降,当La的质量分数为0.10%时,Al2O3/Cu复合材料的导电率提高11.3%IACS。