Effect of composition and deposition parameters on optical properties of Ge25Sb15−xBixS60 thin films

The optical constants of the Ge₂₅Sb_15−xBi_xS₆₀ (0?x?15) chalcogenide films, either as-deposited or after being annealed at various temperatures have been computed in the spectral wavelength range 400-2400 nm from the transmittance and reflectance measurements of normally-incident light. With the increase in bismuth content, the optical energy gap (which is indirect) decreases, while the refractive index increases. The effects of film thickness, substrate type, deposition rate and γ-radiation on optical properties have been studied. The effect of thermal annealing on the growth characteristics and stability of the films has been studied using X-ray diffraction and scanning electron microscopy. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model.     

Compositional dependence of the optical parameters for Bi5GexSe65−x (30 ≤ x ≤ 45) films

Different compositions of Bi₅Ge_xSe_95−x (x = 30, 35, 40 and 45 at %) thin films were deposited onto cleaned glass substrates by thermal evaporation method. The structural characterization revealed that, the as-prepared films of x = 30, 35 and 40 at. % are in amorphous state but there are few tiny crystalline peaks of relatively low intensity for the film with x = 45 at. %. The chemical composition of the as-prepared Bi₅Ge_xSe_65−x films has been checked using energy dispersive X-ray spectroscopy (EDX). The optical properties for the as-deposited Bi₅Ge_xSe_65−x thin films have been studied. The additions of Ge content were found to affect the optical constants (refractive index, n and the extinction coefficient, k). Tauc’s relation for the allowed indirect transition is successfully describing the mechanism of the optical absorption. It was found that, the optical energy gap (E_g) decreases with the increase in Ge content. These obtained results were discussed in terms of the chemical bond approach proposed by Bicermo and Ovshinsky. The composition dependence of the refractive index was discussed in terms of the single oscillator model.     

Carrier induced magnetism in dilute Fe doped Ge1−xSbx thin films

Thin films of Fe_0.01Ge_1−xSb_x (x = 0.01, 0.05, 0.10) alloys were prepared by thermal evaporation technique. Characterization of these thin films was done using High Resolution X-Ray Diffraction (HRXRD), Two Probe Resistivity measurement, Atomic Force Microscopy (AFM) and Magnetic Force Microscopy (MFM) respectively. The resistivity results show that activation energy increases with increase in Sb concentration. The low temperature conduction is explained by Variable Range-Hopping mechanism, which fits very well for the whole temperature range. The Arrhenius plot reveals semiconducting behavior. The AFM images of alloys show almost uniform particle size distribution with average particle size varying from 35 to 60 nm with increase in Sb concentration. The MFM images corresponding to the AFM images show the films exhibiting ferromagnetic interactions at room temperature. The average magnetic domain sizes were observed to increase from 43 to 68 nm with increase in Sb concentration from x = 0.01 to x = 0.10.     

The deposition and optical properties of Ge1−xCx thin film and infrared multilayer antireflection coatings

The effects of deposition parameters on the deposition rate, microstructure, and composition of Ge_1−xC_x thin films prepared by plasma enhanced chemical vapor deposition were studied and the films' infrared optical properties were investigated. The results show that the carbon content of these films increases as the precursor gas flow ratio of CH₄:GeH₄ increases, while the infrared refractive index of these films decreases from 4 to 2. The deposition rate increases with the radio-frequency power and reaches a constant value when the power goes above 60 W. Ge_1−xC_x/diamond-like carbon infrared antireflection coatings were prepared, and the transmittance of the coatings in the band of 8 to 14 μm was 88%, which is superior to that of Zinc Sulfide substrate by 14%.     

Influence of laser-irradiation on the optical constants Se75S25 − xCdx thin films

Amorphous thin films of glassy alloys of Se₇₅S_25 − xCd_x (x = 2, 4 and 6) were prepared by thermal evaporation onto chemically cleaned glass substrates. Optical absorption and reflection measurements were carried out on as-deposited and laser-irradiated thin films in the wavelength region of 500-1000 nm. Analysis of the optical absorption data shows that the rule of no-direct transitions predominates. The laser-irradiated Se₇₅S_25 − xCd_x films showed an increase in the optical band gap and absorption coefficient with increasing the time of laser-irradiation. The results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The value of refractive index increases decreases with increasing photon energy and also by increasing the time of laser-irradiation. With the large absorption coefficient and change in the optical band gap and refractive index by the influence of laser-irradiation, these materials may be suitable for optical disc application.     

Characterization of phase transition in silver photo-diffused Ge2Sb2Te5 thin films

Surface activity of thermally evaporated amorphous chalcogenide films of Ge₂Sb₂Te₅ has been investigated. Silver (Ag) is readily deposited on such films from appropriate aqueous ionic solution and Ag diffuses into the films upon irradiation with energetic photons. The composition of Ge₂Sb₂Te₅ thin films and the amount of Ag photo-diffused has been gathered from electron probe micro-analyzer having a wavelength dispersive spectrometer. The composition of the films was found to be very close to the bulk used to deposit films and the amount of Ag photo-diffused was ∼ 0.38 at. %. X-ray diffraction and temperature dependent sheet resistance studies have been used for the structural analysis of the bulk alloy, as-deposited, Ag photo-diffused and annealed films at different temperatures. The films remain amorphous after Ag photo-diffusion into the amorphous Ge₂Sb₂Te₅ films. The reflectivity, reflectivity contrast and extinction coefficient of the crystalline and amorphous photo-diffused thin films are presented. The optical band gaps of the amorphous and crystalline photo-diffused (Ge₂Sb₂Te₅)_100−xAg_x=0.38 phase change thin films have also been calculated from absorption data using UV-VIS spectroscopy.     

Compositional dependence optical properties study of As40Se60 − xSbx thin films

Thin films were thermally evaporated from the bulk glasses of As₄₀Se_60 − xSb_x (with x = 0, 5, 10, 15 at.%) under high vacuum. We have characterized the deposited films by Fourier Transform Infrared spectroscopy. The relationship between the structural and optical properties and the compositional variation has been investigated. Increasing Sb content was found to affect the thermal and optical properties of these films. Non-direct electronic transition was found to be responsible for the photon absorption inside the investigated films. It was found that, the optical band gap E_o decreases while the width of localized states (Urbach energy) E_e increases.     

Laser-induced amorphization and crystallization on Se80Te20−xPbx thin films

Thin films of glassy alloys of a-Se₈₀Te_20−xPb_x (x=2, 6 and 10) was crystallized in a specially designed sample holder under a vacuum of 10⁻² Pa. The amorphous and crystallized films were induced by pulse laser (wavelength: 337.1 nm, frequency: 10 Hz, pulse duration: 4 ns and pulse energy: 0.963 mJ). After laser irradiation on amorphous and crystalline films: optical band gaps were measured. Crystallization and amorphization of chalcogenide films is accompanied by the change in the optical band gap. The change in optical energy gap could be determined by identification of the transformed phase. This change in the optical band gap may be due to the increase in the grain size and the reduction in the disorder of the system.     

Optical properties and DC electrical conductivity of Ge28−xSe72Sbx thin films

Thin films of Ge_28−xSe₇₂Sb_x (x=0, 8, 16, 24 at%) with thickness of 200 nm are prepared by thermal evaporation onto glass substrates under vacuum of 5.3×10⁻⁵ mbar. Optical reflectance and transmittance of these films are measured at room temperature in the light wavelength region from 200 to 1100 nm. The estimated optical energy gap, E_g, is found to decrease from 2 eV (0 at% Sb) to 1.5 eV (24 at% Sb), whereas the band tail width, E_e, increases from 0.062 to 0.077 eV, respectively. The refractive index, n, and extinction coefficient, κ, are determined as functions of wavelength. The DC electrical conductivity, σ, of films is measured as a function of temperature in the range from 300 to 360 K. The extracted value of activation energy, ΔE, is found to decrease from 0.95 eV (0 at% Sb) to 0.74 eV (24 at% Sb). Optical and electrical behavior of films can be explained in terms of cohesive energy (CE) and Se-Se defect bonds.     

Composition dependence of optical constants of Ge1 − xSe2Pbx thin films

Optical constants of vacuum-evaporated thin films in the Ge_1 − xSe₂Pb_x (x = 0, 0.2, 0.4, 0.6) system were calculated from reflectance and transmittance spectra. It is found that the films exhibit a non-direct gap, which decreases with increasing Pb content. The variation in the refractive index and the imaginary part of the dielectric constant with photon energy is reported. The relationship between the optical gap and chemical composition in chalcogenide glasses is discussed in terms of the average heat of atomization.     

Glass transition kinetics and optical band gap in Se85−xSb15Snx (x = 10, 11, 12.5, and 13) chalcogenide glasses

Se_85−xSb₁₅Sn_x (10 ≤ x ≤ 13) chalcogenide glasses were prepared by melt quenching technique. The glass transition temperature T_g of the samples was recorded at different heating rates using differential scanning calorimeter DSC. From the heating rate dependence of T_g, the activation energy for thermal relaxation E_t was calculated using Moynihan model and Kissinger equation. It is found that T_g increases with Sn content due to enhancement of both the degree of cross-linking parameter D_cl and the mean bond energy of the average cross-linking per atom 〈E_cl〉. The observed increase in D_cl and 〈E_cl〉 is attributed to the formation of SnSe_4/2 structural units of energies higher than that of Se–Se and Se–Sb bond energies. The decreasing trend of E_t with the addition of Sn is an indication of improving thermal stability as it is also evident from the values of the temperature difference T_c − T_g. Correlation of T_g values with the physical parameters of the studied glasses (for instance, the average coordination number 〈Z〉, the average heat of atomization (H_s), the overall mean bond energy 〈E〉, and the optical band gap (E_g)) reveals that T_g increases linearly with 〈Z〉, H_s, and 〈E〉 but the behavior with E_g is opposite.     

Optical, electrical and thermal studies on (As2Se3)3−x(As2Te3)x glasses

Optical properties and conductivity of glassy (As₂Se₃)_3−x(As₂Te₃)_x were studied for 0 ≤ x ≤ 3. The films of the above mentioned compound were prepared by thermal evaporation with thickness of about 250 nm. The optical-absorption edge is described and calculated using the non-direct transition model and the optical band gap is found to be in the range of 0.92 to 1.84 eV. While, the width of the band gap tail exhibits opposite behaviour and is found to be in the range of 0.157 to 0.061 eV, this behaviour is believed to be associated with cohesive energy and average coordination number. The conductivity measurement on the thin films is reported in the temperature range from 280 to 190 K. The conduction that occurs in this low-temperature range is due to variable range hopping in the band tails of localized states, which is in reasonable agreement with Mott's condition of variable range hopping conduction. Some parameters such as coordination number, molar volume and theoretical glass transition temperature were calculated and discussed in the light of the topological bonding structure.     

Band offset calculations of ZnSxSe1−x/ZnSySe1−y heterostructures

In order to design devices based on II-VI materials, it is necessary to know the potential across the interface between two materials. Following our recent calculations which prove that the band gap energy of ZnS_xSe_1−x alloy has a nonlinear behaviour versus the sulphur composition x, it appears that an accurate knowledge of band offsets for ZnS_xSe_1−x/ZnS_ySe_1−y structures will be useful to model devices based on this heterostructure. On the basis of a model-solid theory, we report in this work the band offset calculations for zinc blende pseudomorphically strained ZnS_xSe_1−x/ZnS_ySe_1−y interface. From the results obtained, we have calculated the band gap energies of ZnS_xSe_1−x layers pseudomorphically strained on ZnS_ySe_1−y substrate as a function of compositions x and y in the whole range 0 ≤ x,y ≤ 1. Also, the band gaps of bulk ZnS_xSe_1−x deposed on ZnS_ySe_1−y for several values of y have been calculated versus the sulphur content x. Analytical formulas fitting these bands have been obtained. In view of the lack of theoretical calculations, our results seem likely to be useful especially in the design of ZnS_xSe_1−x structures for optoelectronic devices applications.     

Compositional dependence of the optical parameters for Bi5GexSe65−x (30 ≤ x ≤ 45) films

Different compositions of Bi₅Ge_xSe_95−x (x = 30, 35, 40 and 45 at %) thin films were deposited onto cleaned glass substrates by thermal evaporation method. The structural characterization revealed that, the as-prepared films of x = 30, 35 and 40 at. % are in amorphous state but there are few tiny crystalline peaks of relatively low intensity for the film with x = 45 at. %. The chemical composition of the as-prepared Bi₅Ge_xSe_65−x films has been checked using energy dispersive X-ray spectroscopy (EDX). The optical properties for the as-deposited Bi₅Ge_xSe_65−x thin films have been studied. The additions of Ge content were found to affect the optical constants (refractive index, n and the extinction coefficient, k). Tauc’s relation for the allowed indirect transition is successfully describing the mechanism of the optical absorption. It was found that, the optical energy gap (E_g) decreases with the increase in Ge content. These obtained results were discussed in terms of the chemical bond approach proposed by Bicermo and Ovshinsky. The composition dependence of the refractive index was discussed in terms of the single oscillator model.     

Effects of Sr addition on crystallinity and optical absorption edges in ternary semiconducting silicide Ba1−xSrxSi2

Polycrystalline Ba_1−xSr_xSi₂ films with the Sr composition x varying from 0 to 0.77 were grown on transparent fused silica substrates by molecular beam epitaxy, and the effects of Sr addition on the indirect optical absorption edge E_edge were investigated. It was found that the E_edge value increases almost linearly with increasing x and reached approximately 1.40 eV when x was 0.52. When x > 0.6, the E_edge value almost saturates, and the formation of homogeneous Ba_1−xSr_xSi₂ films became difficult. Composition separation was observed for x = 0.77.     

Effect of tellurium addition on the optical and physical properties of germanium selenide glassy semiconductors

Thin films of the glasses Ge₁₀ Se_90−x Te_x (0 ≤ x ≥ 40) have been prepared by melt quenching technique; thin films were evaporated at a pressure of ≈10⁻⁴ Pa. The optical absorption behavior of these thin films was studied from the reflection and transmission spectrum in the spectral range 200-1200 nm. The optical constants i.e optical band gap (E_opt), absorption coefficient, refractive index (n) are calculated. The optical band gap has been estimated using Tauc extrapolation and found to decrease with Te content. The Dispersion of refractive index has been studied in terms of Wemple - Di Domenico model. The value of static refraction index has been found to increase with Te content. The distribution of the possible chemical bonds has been calculated. The obtained results were correlated with the character of the chemical bond for the prepared compositions through a study of parameters such as average heat of atomization (Hs), the cohesive energies of the bonds (CE), The mean bond energy <E> and average coordination number (m).     

Study of GeYSi1 − Y:H films deposited by low frequency plasma

In this work, we report a study of the optical properties measured through spectral transmission and spectroscopic ellipsometry in Ge:H and Ge_YSi_1 − Y:H (Y ≈ 0.97) films deposited by low frequency (LF) PE CVD with hydrogen (H) dilution. The dilution was varied in the range of R = 20 to 80. It was observed that H-dilution influences in a different way on the interface and bulk optical properties, which also depend on incorporation of silicon. The films with low band tail characterized by its Urbach energy, E_U, and defect absorption, α_D, have been obtained in Ge:H films for R = 50 with E_U = 0.040 eV and α_D = 2 × 10³ cm^− 1 (hν ≈ 1.04 eV), and in Ge_YSi_1 − Y:H films for R=75 with E_U = 0.030 eV and α_D = 5 × 10² cm^− 1 (hν ≈ 1.04 eV).     

Steady state and transient photoconductivity measurements in a-Se90 − xSb10Inx thin films

Amorphous thin films of Se_90 − xSb₁₀In_x (0 ≤ x ≤ 15) have been prepared by electron beam evaporation method. The steady state and transient photoconductivity measurements on the thin films of Se_90 − xSb₁₀In_x (0 ≤ x ≤ 15) were carried out at different levels of light intensities (500 lx-5000 lx) at room temperature (301 K). The plot of photocurrent (I_ph) versus light intensity (F) follows a power law I_ph ∝ F^γ. The value of exponent γ lies between 0.5 and 1.0, which indicates there exists a continuous distribution of localized states in the mobility gap of Se_90 − xSb₁₀In_x (0 ≤ x ≤ 15) thin films. For transient photoconductivity, when the samples were illuminated with light, the photocurrent reaches the maximum value during the first 5 s of exposure time and thereafter, it starts decreasing and becomes stable after 15 min of exposure. This kind of phenomenon is termed as photo-degradation of photocurrent. The results have been explained on the basis of charged defect model and the intercluster interaction model. The magnitude of photocurrent of the system a-Se₇₅Sb₁₀In₁₅ is higher than the parent system a-Se₉₀Sb₁₀. The photosensitivity shows a minimum value at 5 atomic percentage of indium (In) concentration, which is explained based on chemically ordered network model and the topological model.     

Influence of ultraviolet irradiation on the optical properties of amorphous Sb10Se90 thin films

Amorphous Sb₁₀Se₉₀ thin films were prepared by thermal evaporation of the bulk glass. The changes in the optical properties (transmittance, optical gap, absorption coefficient, refractive index and extinction coefficient) have been measured in the wavelength range 500-900 nm of virgin and ultraviolet (UV) illuminated films. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It is found that the optical energy gap decreases (photo-darkening) and the refractive index increases with the increase of UV exposure time. The dispersion of the refractive index (n) has been discussed in terms of Wemple-Didomenico single oscillator model. The oscillator energy E₀ and the dispersion energy E_d have been determined and discussed in terms of UV exposure time. The photo-darkening was discussed in terms of some of the current literature models.     

Band gap and dispersive behavior of Ge alloyed a-SbSe thin films using single transmission spectrum

The transparency of SbSeGe glasses in the IR region makes them attractive candidates for low transmission loss applications. The samples of Sb₁₀Se_90−xGe_x (x = 0, 19, 21, 23, 25, 27) glasses have been prepared by melt quench technique. The thin films of these glasses have been deposited by vacuum evaporation technique. The optical study of thin films has been carried out. The refractive index, oscillator parameters, optical band gap and dielectric parameters have been calculated from optical measurements. The optical study reveals that the variation in the density of localized defect states on Ge addition affects the optical parameters of the system. The variation in concentration of localized defect states has been interpreted in terms of the change in structural network of the system.