K波段T/R组件高移相精度的研究

T/R 组件作为有源相控阵雷达中的核心部件,其移相精度决定着雷达的性能好坏。 本文对 K 波段的高频 T/R 组件进行了研究,在单独采用数控移相器移相精度较差不满足项目指标要求的情况下,采用数控移相器和小位移相器相结合的方法,使 T/R 组件的移相精度有了很大的改善.测试结果移相均方根误差 RMS 小于 2.3°,同时各移相态的移相精度保持在 8°以内,大大提高了 T/R 组件的移相精度,保证了系统的扫描精度。     

RF MEMS技术对小型化雷达的作用

该文采用至上而下的方式,介绍了应用RF MEMS技术的雷达系统,将雷达子系统与RF MEMS技术联系起来,具体分析了应用于雷达的RF MEMS开关、移相器、滤波器和谐振器。同时,文中以开关和移相器为例,讨论了如何提高RFMEMS雷达的性能:修改空气桥形状可以提高RF MEMS收发(T/R)组件的功率处理能力,从而减少雷达相控阵的T/R组件数量;缩短转换时间的RF MEMS移相器能够应用于高速电扫描阵列;蜿蜒型5位分布式MEMS传输线移相器面积仅为5.36mm×4.72mm,相比传统移相器长度降低70%,易于实现雷达阵列的小型化。     

高增益、大功率、一体化固态T／R组件设计

本文介绍了高增益、大功率、一体化固态T／R组件的设计思想。在给定组件指标及可选功率管范围的条件下,合理的放大器级数设定及增益分配是组件实现的前提;从AC220V到组件所需的多路直流电源的转换,采用PFCSepic单相功率因数校正可以有效控制组件对系统配电的影响;BUCK型SCRC变换器开关管零电压、零电流开启、关断,以及良好的电磁兼容设计和有效的屏蔽处理是系统稳定工作的保证;合理的水道设计,解决了组件的散热问题,提高了可靠性。结构与电讯设计的融合,实现了减小组件体积、重量的目的。文中给出了组件电讯指标的实测结果,可作为其它相关工程设计参考。     

DDS在相控阵雷达信号处理中的应用

介绍了直接数字合成技术（DDS）的工作原理，分析了结构组成、特点和影响其性能的主要参数；并针对其特点讨论了它在相控阵雷达中的应用，讨论了一种以DDS单元为核心的相控阵T／R组件实现方案，以及该设计方案的特点；在此基础上重点对T／R组件中的DDS单元电路进行了设计；最后对测试结果进行了分析。     

Technologies for miniaturisation of advanced spaceborne payloads

The Advanced Synthetic Aperture Radar (ASAR) is one of the instruments proposed by the European Space Agency (ESA) for use on the Polar Platform POEM-1. This phased-array radar comprises 320 transmit/receive (T/R) modules and therefore represents a high volume requirement for spaceborne applications. Each T/R module is required to meet stringent specifications in terms of size, mass, power consumption and overall electrical performance. This has been achieved through the widespread use of custom-designed, GaAs MMIC technologies within the module. Where high efficiency or low noise is required, discrete component circuits were used but methods of miniaturisation providing volumes comparable to that of packaged MMICs were necessary. The project has also pioneered the use of lightweight packaging and substrate technologies for space applications     

Impact of wide bandgap microwave devices on DoD systems

Radiofrequency (RF) semiconductor electronics enable military systems that operate in the microwave and millimeter wave frequency bands of 1-100 GHz. The performance of numerous electromagnetic systems could be enhanced by the inclusion of wide bandgap (WBG) microwave and millimeter wave devices, either as power amplifier or receiver elements. The demonstrated power performance has generally been six to ten times that of equivalent gallium arsenide or indium phosphide devices up through 20 GHz, with enhanced dynamic range and improved impedance matching. These characteristics provide an opportunity to significantly reduce the number of modules required for many active aperture antenna systems, hence, cost, while enabling new capabilities for shared apertures. Prior to realization of any WBG system deployment, however considerable development and maturation of WBG materials, devices, and circuits must yet ensue.     

X波段光控相控阵雷达技术

基于现有的器件提出了X波段光控相控阵雷达的设计方案,对光信号收发以及OTTD(Optical True Time Delay)的实现方案进行了探讨.采用光纤技术的X波段光控相控阵雷达通过引入光实时延迟线OTTD,减轻了传统相控阵雷达因渡越时间和孔径效应对信号瞬时带宽的限制,实现了宽带宽角扫描.     

LDMOS 功率器件在固态雷达发射系统中应用研究与实践

介绍了LDMOS 功率器件的特性,通过与传统Si 功率器件相比较,LDMOS 器件具有低成本、高增益、高线性度、热稳定性好和高可靠性等特点,在固态雷达发射系统中有广阔的应用前景,本文对LDMOS 功率器件在固态雷达发射系统中应用进行理论分析,并利用LDMOS 功率器件设计制作了P 波段300W 功放组件,对LDMOS 功率放大组件进行性能测试,根据试验数据分析应用LDMOS 功率器件对固态雷达发射系统的影响。     

S波段高功率T/R组件的小型化和高可靠设计

介绍了一种S波段高功率T/R组件的小型化和高可靠设计技术。组件整体采用了一种＂三明治＂式电路结构形式,并使用多层微波复合介质基板完成高密度互连,使用集成双管功放单元和层压串馈功率合成器技术制作高功率密度功放电路。结果表明,用该技术方法研制的S波段高功率T/R组件输出功率可达800 W,重量约3 kg,长期工作稳定可靠。     

一种新颖的Ka频段T/R组件立体混合集成封装

介绍了一种新颖的Ka频段T/R组件立体混合集成封装.针对Ka频段T/R组件高频率和高密度的特点,提出了一种新颖的多层组装和双面密封的立体电路结构,采用软基片、FR-4等简单成熟工艺,实现了Ka频段M- MCM的混合集成.该封装具有集成度高、散热性好和可靠性高等特点,能够应用于Ka频段二维有源相控阵T/R子阵的工程研制.     

相控阵雷达数据处理系统的仿真

基于相控阵雷达数据处理基本工作原理,阐述了数据处理模块的基本构成及采用的数据关联、跟踪滤波算法,并根据空间探测相控阵雷达的典型工作要求进行了仿真,仿真结果验证了该数据处理系统可以正确工作在空间多目标环境下。     

C 波段全固态T / R 组件设计

C波段星载合成孔径雷达(SAR)系统是应用于海洋目标监视的有力手段之一.基于T/R组件的有源相控天线可靠性高,成为现阶段星载SAR雷达的研究热点,其对T/R组件的需求特点包括:高效率、低功耗、重量轻、费用低、高幅度相位稳定性和高可靠性.文中介绍了最新研制的四通道C波段星载T/R组件,采用微波多芯片组件技术,T/R组件通道间距为1/4波长,其输出功率大于22W,噪声系数2.3dB,接收增益大于23dB,功率附加效率大于23％,重量小于200g.     

Performance drifts of N-MOSFETs under pulsed RF life test

This paper presents a reliability life test bench specifically dedicated to high RF power devices for lifetime tests under pulse conditions. The monitoring of RF power, drain, gate voltages and currents under various pulses and temperatures conditions are investigated. A 3000 h pulsed RF life test has been conducted on a dedicated RF S-band test bench in operating modes. The investigation findings of degradations of critical electrical parameters derived from the data treatment after this accelerated ageing tests are presented. Numerous duty cycles are applied in order to stress Lateral-Diffused Metal-Oxide-Semiconductor (LDMOS). It shows with tracking of a set of RF parameters (P_out, Gain and Drain Efficiency: DE) that the dominant degradation phenomenon is linked to hot carriers generated interface states (traps) and trapped electrons. Which results in a build up of negative charge at Si/SiO₂ interface and the main cause appear with incidence on RF power device. Physical simulation software (Silvaco-Atlas) has been used to locate and confirm these phenomena.     

有源相控阵射频系统稳定性设计与评估

有源相控阵的核心是微波射频系统,包含T/R组件和延时放大组件。T/R组件具有高效率、高幅度相位稳定性、高可靠性、低成本、小型化等优点。在组件小型化的同时提供了极高的射频增益,其稳定性设计与评估就显得十分重要。文中介绍了有源相控阵射频系统稳定性常见的问题以及评估方法,用此方法确保了微波射频系统的稳定性,同时极大提高了雷达的可靠性和安全性,为有源相控阵雷达长期稳定运行提供了有力的技术保证。     

An all solid-state modulator for the ARSR-3 transmitter

This paper describes an all solid-state, high-power pulse modulator used in the ARSR-3 system (an FAA air route surveillance radar system). The modulator, the culmination of a number of years of both device and circuit development, uses fast switching Reverse Blocking Diode Thyristors (RBDT's) to directly switch 14-MW, 3-µs video pulses at high current without the use of magnetic switching aids. The modulator consists of five identical PFN modules, a trigger amplifier, and a pulse transformer which matches the modulator output to the beam characteristics of a klystron. Each module contains its own PFN, discharge RBDT switch assembly, and associated circuitry. This modulator is the first production equipment to use the new Westinghouse T62R RBDT devices. The devices switch 2200-A pulses with a turn-on rate of rise of up to 3000 A/µs.     

基于AD9106的高集成度UPA发射系统设计

超声相控阵检测技术具有可动态聚焦、检测复杂形状物体中的损伤、缺陷定位精准等优点。然而,现有的检测设备利用单芯片制作单通道后再扩展成多通道系统,集成度低、维护困难。文中基于FPGA技术,系统性地设计了延时算法、时序控制模块,采用ADI公司最新推出的含4通道基单元芯片AD9106构建大规模相控阵发射系统,设计配置高速发射/接收切换开关,从而实现多阵元的可控自发自收,大幅降低了系统中发射和接收硬件模块的复杂性和外形尺寸,同时抑制激发模块的高压发送脉冲。此相控阵发射系统具有集成度高、抗干扰能力强、精度高、功耗低、安全性强等优点。     

The PHARUS project, results of the definition study including theSAR testbed PHARS

The PHARUS (Phased Array Universal SAR) project aims for a polarimetric C-band aircraft synthetic aperture radar (SAR) that will be finalized in 1994. The system will make use of a phased array antenna with solid-state amplifiers. The project consists of a definition phase and a realization phase. The definition phase is intended to increase the knowledge on airborne SAR systems and to develop the critical technology that will be used in the final system. Three preparatory studies were carried out before the PHARUS system was designed. The study on antenna technology and calibration focused on the design of an active phased array antenna and on the calibration problems involved in using such an antenna. The second study concentrated on motion compensation and the third study consisted of the realization of a SAR testbed. Some results of the definition phase, including the results obtained from the first test flights of the SAR testbed, are given. The PHARUS predesign is described     

一种S波段大功率4×4瓦片式数字T/R组件设计

设计了一种S波段大功率4×4瓦片式数字T/R 组件,采用数模混合收发SoC(片上系统)及三维立体集成等技术实现了高集成、小型化、轻量化、模块化及低成本的要求。T/R 组件在S 波段单通道输出功率≥100 W, 体积和重量相比于传统砖块式组件均减小了50%,具有不可比拟的优势,更易于实现大规模阵列集成,具有低剖面、可共形、可升级重构的特点。研制结果充分验证了该设计的可行性及可扩展性,能够更好地满足不同雷达和通信需求。     

新型的功率器件--射频LDMOS

射频LDMOS功率器件与普通双极型功率器件相比,结构合理、增益高、热稳定性好、性价比高,广泛应用于通信、广播、航空、军事电子等领域。文中对射频LDMOS功率器件的发展趋势、应用前景及主要性能作了较详细的分析,通过实验得出结论,LDMOS功率器件可用于固态发射机中。     

固态微波电子学的新进展

固态微波电子学是现代电子学的重要分支之一,其基础材料已由第一代半导体Si和Ge、第二代半导体GaAs和InP,发展到第三代半导体GaN和SiC,石墨烯和金刚石等C基新材料正在进行探索性的研究,其加工工艺的尺寸也已进入纳米尺度,其工作频率已达到1 THz,应用的频率可覆盖微波毫米波到太赫兹.目前固态微波电子学呈多代半导体材料和器件共同发展的格局.综述了具有代表性的1 1类固态器件(RF CMOS,SiGe BiCMOS,RF LDMOS,RF MEMS,GaAs PHEMT,GaAs MHEMT,InP HEMT,InP HBT,GaN/SiC HEMT,GFET和金刚石FET)近几年的最新研究进展,详细介绍了有关固态微波电子学的应用需求、技术特点、设计拓扑、关键技术突破和测试结果,分析了当前固态微波电子学总的发展趋势和11类固态微波器件的发展特点和定位.最后介绍了采用3D异构集成技术的射频微系统的最新进展,指出射频微系统是发展下一代射频系统的关键技术.