Preliminary Observations on Phase Relations in the "V2O3–FeO" and V2O3–TiO2 Systems from 1400°C to 1600°C in Reducing Atmospheres

Phase relations within the "V₂O₃–FeO" and V₂O₃–TiO₂ oxide systems were determined using the quench technique. Experimental conditions were as follows: partial oxygen pressures of 3.02 × 10⁻¹⁰, 2.99 × 10⁻⁹, and 2.31 × 10⁻⁸ atm at 1400°, 1500°, and 1600°C, respectively. Analysis techniques that were used to determine the phase relations within the reacted samples included X-ray diffractometry, electron probe microanalysis (energy-dispersive spectroscopy and wavelength-dispersive spectroscopy), and optical microscopy. The solid-solution phases M₂O₃, M₃O₅, and higher Magneli phases (M _n O_{2 n −1}, where M = V, Ti) were identified in the V₂O₃–TiO₂ system. In the "V₂O₃–FeO" system, the solid-solution phases M₂O₃ and M₃O₄ (where M = V, Ti), as well as liquid, were identified.     

Interdiffusion and Association Phenomena in the System NiO-Al2O3

The rate of formation of NiAl₂O₄ by reaction between single crystals of NiO and Al₂O₃ can be described by k = 1.1 × 10⁴ exp (−108,000 ± 5,000/ RT ) cm²/s. In NiO the behavior of D as a function of concentration supports the Lidiard theory of diffusion by impurity-vacancy pairs. A good fit of the theory to the experimental results was obtained by assuming that Al³⁺ ions diffuse as [Al_Ni· V_Ni]'pairs. The diffusion coefficient of pairs, D_p , obeys the equation 6.6 × 10⁻² exp (−54,000 ± 3,000/ RT ) cm²/s. The free energy of association for pairs was calculated to range from 6.5 kcal/mol at 1789°C to 9.0 kcal/mol at 1540°C. The interdiffusion coefficients in the spinel showed a constant small increase with increasing concentration of Al³⁺ dissolved in the spinel.     

Deviation from Stoichiometry in Cr2O3 at High Oxygen Partial Pressures

The deviation from stoichiometry, δ, in Cr₂−δO₃ was measured by a tensivolumetric method in the high pO₂ range of ≊10⁴ to 10⁴ Pa at 1100°C. The value of δ, or chromium vacancy concentration, was≊9×10⁻⁵ mol/mol Cr₂O₃ in air for Cr₂O₃ with 99.999% purity. The chemical diffusion coefficient, DT, determined from equilibration data was ≊4.6× cm²·s⁻¹ at 1100°C for pO₂= 2.2 ×10¹ Pa. The self-diffusion coefficient of Cr ions was calculated from and δ and found to be≊1.6×10-17 cm²-s⁻¹, in good agreement with recently measured values.     

Formation of ZnAl2O4 in the Presence of Cl2

The formation of ZnAl₂O₄ spinel in diffusion couples of Al₂O₃ and ZnO was investigated between 1000° and 1390°C in air and in air containing 4.8 vol% Cl₂ by X-ray diffraction, electron probe microanalysis, and scanning electron microscopy. The rate of formation of a spinel layer obeyed a parabolic rate law and was accelerated remarkably by the presence of Cl₂. The interdiffusion coefficient, , and the activation energy, E, were calculated to be 10⁻⁸ to 10⁻⁹ cm²/s and 123 kcal/mol (514 kJ/mol) in air and 10⁻⁷ cm²/s and 31 kcal/mol (130 kJ/mol) in air containing 4.8 vol% Cl₂, respectively.     

Thermal Expansion of the Low-Temperature Form of BaB2O4

Thermal expansion of the low-temperature form of BaB₂O₄ (β-BaB₂O₄) crystal has been measured along the principal crystallographic directions over a temperature range of 9° to 874°C by means of high-temperature X-ray powder diffraction. This crystal belongs to the trigonal system and exhibits strongly anisotropic thermal expansions. The expansion along the c axis is from 12.720 to 13.214 Å (1.2720 to 1.3214 nm), whereas it is from 12.531 to 12.578 Å (1.2531 to 1.2578 nm) along the a axis. The expansions are nonlinear. The coefficients A, B , and C in the expansion formula L _t = L ₀(1 + At + Bt ²+ Ct ³) are given as follows: a axis, A = 1.535 × 10⁻⁷, B = 6.047 × 10⁻⁹, C = -1.261 × 10⁻¹²; c axis, A = 3.256 × 10⁻⁵, B = 1.341 × 10⁻⁸, C = -1.954 × 10⁻¹²; and cell volume V, A = 3.107 × 10⁻⁵, B = 3.406 × 10⁻⁸, C = -1.197 × 10⁻¹¹. Based on α _t = (d L _t /d t )/ L ₀, the thermal expansion coefficients are also given as a function of temperature for the crystallographic axes a , c , and cell volume V.     

Thermal Expansion of Pb3O4

Thermal expansion of Pb₃O₄ was investigated by high-temperature X-ray diffraction. The coefficient in the a ₀ direction is 14.6×10⁻⁶/°C. Expansion in the c₀ direction is 32% greater, with a coefficient of 19.3×10⁻⁶/°C. Coefficients of expansion are linear from 25° to 490°C and are comparable with those of tetragonal and orthorhombic PbO.     

High-Strain-Rate Superplasticity in Y2O3-Stabilized Tetragonal ZrO2 Dispersed with 30 vol% MgAl2O4 Spinel

High-strain-rate superplasticity is attained in a 3-mol%-Y₂O₃-stabilized tetragonal ZrO₂ polycrystal (3Y-TZP) dispersed with 30 vol% MgAl₂O₄ spinel: tensile elongation at 1823 K reached >300% at strain rates of 1.7 × 10⁻²– 3.3 × 10⁻¹ s⁻¹. The flow behavior and the microstructure of this material indicate that the MgAl₂O₄ dispersion should enhance accommodation processes necessary for grain boundary sliding. Such an effect is assumed to arise from an enhancement of the cation diffusion by the dissolution of Al and Mg ions into the ZrO₂ matrix and from stress relaxation due to the dispersed MgAl₂O₄ grains.     

Compressive Creep and Oxidation Resistance of an Si3N4 Material Fabricated in the System Si3N4-Si2N2O-Y2Si2O7

The compressive creep behavior and oxidation resistance of an Si₃N₄/Y₂Si₂O₇ material (0.85Si₃N₄+0.10SiO₂+0.05Y₂O₃) were determined at 1400°C. Creep re sistance was superior to that of other Si₃N₄ materials and was significantly in creased by a preoxidation treatment (1600°C /120 h). An apparent parabolic rate constant of 4.2 × 10⁻¹¹ kg²·m-⁴·s⁻¹ indicates excellent oxidation resistance.     

Vapor Pressure of Barium and Copper Components in YBa2Cu3O7−x Superconductor Ceramics

Purified air is passed over a specimen of YBa₂Cu₃O_{7– x} at 890°C; the vaporized substances are condensed in a pure alumina tube, then subjected to inductively controlled plasma analysis. Vapor pressure values of 2.5 × 10⁻⁵ Pa for BaO( g ), 1.2 × 10⁻⁴ Pa for Cu( g ), and 2.2 × 10⁻⁵ Pa for CuO( g ) are obtained under 2.1 × 10⁴ Pa (0.21 bar) of oxygen pressure. No Y vapor is detected at this temperature.     

Electrical Conduction in Single-Crystal and Polycrystalline Al2O3 at High Temperatures

The electrical conductivity and ion/electron transference numbers in Al₃O₃ were determined in a sample configuration designed to eliminate influences of surface and gas-phase conduction on the bulk behavior. With decreasing O₂ partial pressure over single-crystal Al₂O₃ at 1000° to 1650°C, the conductivity decreased, then remained constant, and finally increased when strongly reducing atmospheres were attained. The intermediate flat region became dominant at the lower temperatures. The emf measurements showed predominantly ionic conduction in the flat region; the electronic conduction state is exhibited in the branches of both ends. In pure O₂ (1 atm) the conductivity above 1400°C was σ≃3×10³ exp (–80 kcal/ RT ) Ω⁻¹ cm⁻¹, which corresponds to electronic conductivity. Below 1400°C, the activation energy was <57 kcal, corresponding to an extrinsic ionic condition. Polycrystalline samples of both undoped hot-pressed Al₂O₃ and MgO-doped Al₂O₃ showed significantly higher conductivity because of additional electronic conduction in the grain boundaries. The gas-phase conduction above 1200°C increased drastically with decreasing O₂ partial pressure (below 10⁻¹⁰ atm).     

Vacuum Vaporization in the System MgO-Cr2O3

The vaporization of the system MgO-Cr₂O₃ was studied in a vacuum of 10⁻⁵ torr (10⁻³N/m²) at 1500° to 1700°C using the Langmuir and Knudsen methods. It was found that the phases in the system vaporize nearly congruently and the logarithm of the vaporization coefficient, α, of MgCr₂O₄ increases linearly with increasing reciprocal temperature. Alpha tends to unity at a temperature near the melting point (2525±23°C). The additivity rule can be applied to the Langmuir vaporization rates on the basis of the surface area ratios of the phases in the 2-phase system MgO-Cr₂O₃. The enthalpies of vaporization of MgCr₂O₄ were 695.0 and 549.2 kcaVmol for activated and equilibrium processes, respectively.     

Growth of β-Alumina (Na2O · 11Al2O3) Single Crystals by the Flux Method

The crystal-growth process and growth conditions of β-alumina (Na₂O · Al₂O₃) were investigated using the Na₂B₄O₇-Na₃AlF₆ flux method. β-Alumina (electric fusion brick) was used as both nutrient and seed. Weight loss of the flux varied widely for various runs: ≅ 10 wt% of flux evaporated at 100 h, ≅ 17 wt% at 150 h, and 43 wt% at 600 h. When β-alumina crystal was grown, only 20 wt% Na₂B₄O₇ was added to the Na₃AlF₆ flux. The linear growth rates of the β-alumina single crystal grown by an Na₃AlF₆-20 wt% Na₂B₄O₇ flux method at 1040°C and Δ t = 18°C were ≅ 1.0 × 10⁻³ mm/h ( a face) and ≅0.3 × 10⁻³ mm/h ( c face). The β-alumina single crystals grown were bounded by only c [001] and a [100] and were colorless and transparent.     

Strength of Hot Isostatically Pressed Si3N4 After Heat Treatment in Ar-O2 and H2-H2O

The effects of heat treatment in Ar-O₂ and H₂-H₂O atmospheres on the flexural strength of hot isostatically pressed Si₃N₄ were investigated. Increases in room-temperature strength, to values significantly above that of the aspolished material, were observed when the Si₃N₄ was exposed at 1400°C to (1) H₂ with water vapor pressure ( P _H2O) greater than 1 × 10⁻⁴ MPa or (2) Ar with oxygen partial pressure ( P _O2) of between 7 × 10⁻⁶ and 1.5 × 10⁻⁵ MPa. However, the strength of the material was degraded when the P _H2O in H₂ was lower than 1 × 10⁻⁴ MPa, and essentially unaffected when the P _O2 in Ar was higher than 1.5 × 10⁻⁵ MPa. We suggest that the observed strength increases are the result of strength-limiting surface flaws being healed by a Y₂Si₂O₇ layer formed during exposure.     

Kinetics of NiCr2O4 Formation and Diffusion of Cr3+ Ions in NiO

The reaction kinetics for NiCr₂O₄ formation and the diffusion of Cr³⁺ ions into single-crystal NiO were studied between 1300° and 1600°C in air. The experimental activation energy for NiCr₂O₄ formation was about 83 kcal/mol. After incubation, NiCr₂O₄ formed by a diffusion-controlled process. The origin of pores at the NiO/NiCr₂O₄ interface is discussed. The concentration profiles of Cr³⁺ in NiO were linear because the interdiffusion coefficient was directly proportional to the mol fraction Cr³⁺. Theoretical considerations indicate that the interdiffusion coefficient equals 3/2 the self-diffusion coefficient of Cr³⁺, which is rate-determining. The interdiffusion coefficient at 1 mol% Cr₂O₃ can be expressed as =4×10⁻³ exp (−55,000/RT) cm² s⁻¹.     

Measurement of Oxygen Diffusion in Dy2O3 and Gd2O3 by Studying High-Temperature Oxidation of the Metals

Studies of the oxidation of Gd and Dy at P _O2's from 10^−0.3 to 10^−14.5 atm and temperatures from 727° to 1327°C indicate both semiconducting and ionic-conducting domains in the sesquioxides formed. At higher temperatures, where dense coarsegrained oxide layers developed, the rate of oxidation in the high- P ₀₂ semiconducting domain yielded oxygen diffusion coefficients in Dy₂O₃ in excellent agreement with literature values derived from oxidation of partially reduced oxide single crystals. Under the same conditions, the oxidation of Gd yielded oxygen diffusion coefficients in cubic Gd₂O₃ which are considerably below literature values for monoclinic single-crystal Gd₂O₃. At lower temperatures, porous scales were formed, and apparent diffusion coefficients derived from oxidation rates show a smaller temperature dependence than the high-temperature data. At low P _O2, the oxides behave as ionic conductors, and metal oxidation rates result in estimates of the electronic contribution to the electrical conductivity of the order of 10⁻⁶ to 10⁻⁷Ω⁻¹ cm⁻¹.     

Effect of Alkali Metal Oxide Addition on the Sinterability of MgO–B2O3–Al2O3 Glass–Al2O3 Filler Composites

The sintering of a composite of MgO–B₂O₃–Al₂O₃ glass and Al₂O₃ filler is terminated due to the crystallization of Al₄B₂O₉ in the glass. The densification of a composite of MgO–B₂O₃–Al₂O₃ glass and Al₂O₃ filler using pressureless sintering was accomplished by lowering the sintering temperature of the composite. The sintering temperature was lowered by the addition of small amounts of alkali metal oxides to the MgO–B₂O₃–Al₂O₃ glass system. The resultant composite has a four-point bending strength of 280 MPa, a coefficient of thermal expansion (RT—200°C) of 4.4 × 10⁻⁶ K⁻¹, a dielectric constant of 6.0 at 1 MHz, porosity of approximately 1%, and moisture resistance.     

Role of Oxygen in Microstructure Development at Solid-State Diffusion-Bonded Cu/α-Al2O3 Interfaces

Microstructure development at solid-state diffusion-bonded Cu/α-Al₂O₃ interfaces has been studied using optical and electron microscopy. High-purity Cu foil was bonded between basal-oriented α-Al₂O₃ single-crystal plates at 1040°C for 24 h in a vacuum of ∼1.3 × 10⁻⁴ Pa (1 × 10⁻⁶ torr). Optical microscopy of as-bonded specimens revealed a large Cu grain size, fine pores, and long needles of Cu₂O at the interface. Bulk specimens were annealed at 1000°C for various times under controlled oxygen partial pressures in CO/CO₂ mixtures. Consistent with a thermochemical analysis, CuAlO₂ could be formed at the interfaces. The CuAlO₂ was acicular and discontinuous, but occurred in a uniform distribution over the bulk specimen interfaces.     

Effects of Temperature and Strain Rate on the Plastic Deformation of Fully Dense Polycrystalline Y1Ba2Cu3O7−x Superconductor

The knowledge of the steady-state stress for plastic deformation as a function of temperature and strain rate is essential for hot-forming superconducting material into commercially useful shapes. In this paper, results are presented on the experimental determination of the rheology of fully dense polycrystalline Y₁Ba₂Cu₃O_7−x superconducting material at temperatures ranging from 750° to 950°C and strain rates of 10⁻⁴, 10⁻⁵, and 10⁻⁶ s⁻¹. The data are best fitted by a power law: ε(s⁻¹)=8.9 × 10⁻¹⁷. (s⁻¹) σ^2.5 (Pa) exp [−2.01 × 10⁵(J·mol⁻¹)|RT]. X-ray analysis shows that the superconducting material retains its phase composition after nearly 70% total strain of the sample. A strong anisotropy in the resistivity of the deformed samples is observed because of the development of a preferred orientation of the a or b axis of Y₁Ba₂Cu₃O_7−x orthorhombic perovskite single crystals perpendicular to the principal maximum compressive stress.     

Electrical Conduction in Nano-Structured La0.9Sr0.1Al0.85Co0.05Mg0.1O3 Perovskite Oxide

Nanocrystalline La_0.9Sr_0.1Al_0.85Co_0.05Mg_0.1O₃ oxide powder was synthesized by a citrate–nitrate auto-ignition process and characterized by thermal analysis, X-ray diffraction, and impedance spectroscopy measurements. Nanocrystalline (50–100 nm) powder with perovskite structure could be produced at 900°C by this process. The powder could be sintered to a density more than 96% of the theoretical density at 1550°C. Impedance measurements on the sintered samples unequivocally established the potential of this process in developing nanostructured lanthanum aluminate-based oxides. The sintered La_0.9Sr_0.1Al_0.85Co_0.05Mg_0.1O₃ sample exhibited a conductivity of 2.40 × 10⁻² S/cm in air at 1000°C compared with 4.9 × 10⁻³ S/cm exhibited by La_0.9Sr_0.1Al_0.85Mg_0.15O₃.     

Thermal Expansion Behavior of Titanium-Doped La(Sr)CrO3 Solid Oxide Fuel Cell Interconnects

La_0.8Sr_0.2Cr_0.9Ti_0.1O₃ perovskite has been designed as an interconnect material in high-temperature solid oxide fuel cells (SOFCs) because of its thermal expansion compatibility in both oxidizing and reducing atmospheres. La_0.8Sr_0.2Cr_0.9Ti_0.1O₃ shows a single phase with a hexagonal unit cell of a = 5.459(1) Å, c = 13.507(2) Å, Z = 6 and a space group of R -3 C . Average linear thermal expansion coefficients of this material in the temperature range from 50° to 1000°C were 10.4 × 10⁻⁶/°C in air, 10.5 × 10⁻⁶/°C under a He–H₂ atmosphere (oxygen partial pressure of 4 × 10⁻¹⁵ atm at 1000°C), and 10.9 × 10⁻⁶/°C in a H₂ atmosphere (oxygen partial pressure of 4 × 10⁻¹⁹ atm at 1000°C). La_0.8Sr_0.2Cr_0.9Ti_0.1O₃ perovskite with a linear thermal expansion in both oxidizing and reducing environments is a promising candidate material for an SOFC interconnect. However, there still remains an air-sintering problem to be solved in using this material as an SOFC interconnect.