An investigation on hydrogen storage kinetics of nanocrystalline and amorphous Mg2Ni1−xCox (x = 0-0.4) alloy prepared by melt spinning

In order to improve the hydrogen storage kinetics of the Mg₂Ni-type alloys, Ni in the alloy was partially substituted by element Co, and melt-spinning technology was used for the preparation of the Mg₂Ni_1−xCo_x (x = 0, 0.1, 0.2, 0.3, 0.4) hydrogen storage alloys. The structures of the as-cast and spun alloys are characterized by XRD, SEM and TEM. The hydrogen absorption and desorption kinetics of the alloys were measured by an automatically controlled Sieverts apparatus. The electrochemical hydrogen storage kinetics of the as-spun alloys is tested by an automatic galvanostatic system. The hydrogen diffusion coefficients in the alloys are calculated by virtue of potential-step method. The electrochemical impedance spectrums (EIS) and the Tafel polarization curves are plotted by an electrochemical workstation. The results show that the substitution of Co for Ni notably enhances the glass forming ability of the Mg₂Ni-type alloy. Furthermore, the substitution of Co for Ni, instead of changing major phase Mg₂Ni, leads to forming secondary phases MgCo₂ and Mg. Both the melt spinning treatment and Co substitution significantly improve the hydrogen absorption and desorption kinetics. The high rate discharge ability, the hydrogen diffusion coefficient and the limiting current density of the alloys significantly increase with raising both the spinning rate and the amount of Co substitution.     

Hydrogen storage characteristics of nanocrystalline and amorphous Mg2Ni-type alloys prepared by melt spinning

In order to improve the hydrogen storage characteristics of the Mg₂Ni-type alloys, Ni in the alloy is partially substituted by element Mn, and melt-spinning technology is used for the preparation of the Mg₂Ni_1−xMn_x (x = 0, 0.1, 0.2, 0.3, 0.4) hydrogen storage alloys. The microstructures of the as-cast and spun alloys are characterized by XRD, SEM and HRTEM. The hydrogen absorption and desorption kinetics of the alloys are measured by an automatically controlled Sieverts apparatus. The electrochemical performances are tested by an automatic galvanostatic system. The results show that the as-spun Mn-free alloy holds typical nanocrystalline structure, whereas the as-spun alloys containing Mn displays a nanocrystalline and amorphous structure. The hydrogen absorption and desorption capacities and kinetics of the alloys increase with rising spinning rate. Additionally, melt spinning markedly improves the electrochemical hydrogen storage capacity and cycle stability of the alloys containing Mn. With an increase in the spinning rate from 0 (As-casts is defined as spinning rate of 0 m/s) to 30 m/s, the discharge capacity of the (x = 0.3) alloy mounts up from 92.3 to 211.1 mAh/g, and its capacity retaining rate at 20th charging and discharging cycle grows from 36.21% to 76.02%.     

Influence of the addition of vanadium on the hydrogenation properties of the compounds TiFe0.9Vx and TiFe0.8Mn0.1Vx (x = 0, 0.05 and 0.1)

TiFe_0.9 and TiFe_0.8Mn_0.1 hydrides have suitable equilibrium pressures at ambient conditions and are potential candidates for hydrogen storage applications. In this work, we study the influence of the addition of small amounts of vanadium on the hydrogenation properties of TiFe_0.9V_x and TiFe_0.8Mn_0.1V_x (x = 0, 0.05 and 0.1) alloys. The excess of Ti from TiFe in these materials results in the precipitation of Ti and Ti₂Fe-type phases. In the analysis of the chemical composition, vanadium was observed in small amount in all phases for each sample which contains vanadium. Vanadium tends to substitute Fe sites, which results in a decrease of the plateau pressures. The addition of vanadium as TiFe_0.8Mn_0.1V_x (x = 0.05 and 0.1) alloys has beneficial effects on the equilibrium plateaus of the hydrides: the plateaus become flatter and a significant reduction in the pressure hysteresis is observed.     

Room temperature electroresistance in Sr2−xGdxMnTiO6 perovskites (0 ≤ x ≤ 1)

We report on the room temperature strong (∼80%) electroresistance (ER) in the double perovskite with mixed Mn valence: Sr_2−xGd_xMnTiO₆, 0 ≤ x ≤ 1. Both, continuous and pulsed current-voltage curves are almost identical which indicates that the observed electroresistance is not associated with heating. This is also supported by simultaneous temperature measurements. ER is negligible (absent) in the x = 0 compound and increases with the increase of Gd content ‘x’. The amplitude of ER has a maximum for x = 0.75, suggesting that ER is determined by both the double exchange and the Mn³⁺ concentration. At the same time, magnetic interactions change from the antiferromagnetic (x = 0) to ferromagnetic ones as x → 1, thus linking the ER with ferromagnetism.     

Structure and thermal behavior of multicomponent Fe68−xNixZr15Nb5B12 (x = 5, 10, 15, 20) alloys

Multicomponent Fe_68−xNi_xZr₁₅Nb₅B₁₂ (x = 5, 10, 15, 20) alloy powders milled for 60 h were prepared by mechanical alloying (MA). The structure and crystallization behavior were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and differential thermal analysis (DTA). Ni enhances the amorphisation of alloy powders. Particle size increases with increasing Ni content. Both onset crystallization temperature T_x and the first crystallization peak temperature T_p of the four alloys shift to a higher temperature with increasing heating rate while melting temperature (T_m) is just the opposite. Fe_68−xNi_xZr₁₅Nb₅B₁₂ (x = 5, 10, 15, 20) alloys all have a large supercooled liquid region ΔT_x. The supercooled liquid region ΔT_x increases and the crystallization activation energy E decreases with increasing Ni content.     

Nanoindentation characteristics of Zr69.5Al7.5 − xGaxCu12Ni11 glasses and their nanocomposites

This work deals with the indentation behavior of Zr_69.5Al_7.5 − xGa_xCu₁₂Ni₁₁ (x = 0, 1.5, 7.5 at.%) alloys. A comparison between their nanohardness and reduced elastic modulus values of the as-synthesized glassy phase with their nanocomposites has been made. The indentation characteristics of a novel Ga substituted glass composition corresponding to x = 7.5 have shown significant improvement in regard to hardness and elastic modulus. The evidence of pile up has been observed in case of as-synthesized glassy ribbons. The load (P) versus depth (h) curves for as-synthesized melt-spun ribbons displayed the presence of displacement burst, which are known as pop-ins. The amount of energy per unit volume required for the shear band formation in glassy state has been estimated based on the pop-ins observed in P-h curve. This seems to decrease with Ga addition. Based on transmission electron microscopic observations of indented glassy specimen, the possibility of nanocrystallization has been ruled out.     

High-Q microwave dielectrics in the (Mg1−xZnx)Al2O4 (x = 0-0.1) system

The microwave dielectric properties and the microstructures of (Mg_1−xZn_x)Al₂O₄ (x = 0-0.1) ceramic system prepared by the conventional solid-state route were investigated. The forming of spinel-structured (Mg_1−xZn_x)Al₂O₄ (x = 0-0.1) solid solutions was confirmed by the XRD patterns and the measured lattice parameters, which linearly varied from a = b = c = 8.0815 Å for MgAl₂O₄ to a = b = c= 8.0828 Å for (Mg_0.9Zn_0.1)Al₂O₄. By increasing x, the Q × f of (Mg_1−xZn_x)Al₂O₄ can be tremendously boosted from 82,000 GHz at x = 0 to a maximum of 156,000 GHz at x = 0.05. The Zn substitution was effective in reducing the dielectric loss without detrimental effects on the ?_r and τ_f values of the ceramics.     

Gaseous and electrochemical hydrogen storage kinetics of nanocrystalline Mg2Ni-type alloy prepared by rapid quenching

The nanocrystalline Mg₂Ni-type Mg₂Ni_1−xCu_x (x = 0, 0.1, 0.2, 0.3, 0.4) alloys were synthesized by direct melt quenching technique. The structures of the as-cast and quenched alloys were investigated by XRD, SEM and HRTEM. The gaseous hydrogen storage kinetics of the alloys was measured using an automatically controlled Sieverts apparatus. The electrochemical hydrogen storage kinetics of the alloys was tested by using constant current to charge and discharge the electrode. The results indicate that the substitution of Cu notably rendered the grain refinement of the as-cast alloys without altering the major phase Mg₂Ni. All the as-quenched alloys exhibit a nanocrystalline structure without the presence of any amorphous phase. It is found that the substitution of Cu for Ni and rapid quenching significantly ameliorated the gaseous and electrochemical hydrogen storage kinetics of the nanocrystalline Mg₂Ni_1−xCu_x (x = 0-0.4) alloys. Furthermore, both the rapid quenching treatment and the Cu substitution results in a notable increase in the hydrogen diffusion coefficient (D) as well as the limiting current density (I_L) but an obvious decline in the electrochemical impedance.     

Structural, optical and electromagnetic properties of Bi1−xHoxFeO3 multiferroic materials

Bi_1−xHo_xFeO₃ (x = 0.00, 0.05, 0.10, 0.15 and 0.20) polycrystalline ceramics were synthesized by a solid-state reaction and their structural, absorption, Raman scattering, impedance and magnetic properties were investigated. The substitution of rare earth Ho for Bi was found to decrease the impurity phase in BiFeO₃ ceramics. There appears an anomalous change in the lattice constants, optical band gap as well as the impedance spectroscopy and magnetization of samples at x = 0.10, suggesting a limit of dissolubility of Ho doped ions in BiFeO₃. Additionally, the Raman measurement performed for the lattice dynamics study of Bi_1−xHo_xFeO₃ samples reveals a band centered at around 1000-1300 cm⁻¹ which is associated with the resonant enhancement of two-phonon Raman scattering in the multiferroic Bi_1−xHo_xFeO₃ samples. Ho-doped BiFeO₃ also showed a ferromagnetic-like behavior with M_r = 1070 × 10⁻⁴ and M_s = 1.60 emu/g for optimum content x = 0.10, which is similar to the solid solution system of BiFeO₃.     

Thermoelectric properties of Cu1−xPtxFeO2 (0.0 ≤ x ≤ 0.05) delafossite-type transition oxide

The samples of Cu_1−xPt_xFeO₂ (0 ≤ x ≤ 0.05) delafossite were synthesized by solid state reaction method for studying thermoelectric properties. The properties of Seebeck coefficient, electrical conductivity and thermal conductivity were measured in the high temperature ranging from 300 to 960 K. The results of Seebeck coefficient, electrical conductivity and power factor were increased with increasing Pt substitution and temperature. The thermal conductivity was decreased from 5.8 to 3.5 W/mK with increasing the temperature from 300 to 960 K. An important results, the highest value of power factor and ZT is 2.0 × 10⁻⁴ W/mK² and 0.05, respectively, for x = 0.05 at 960 K.     

Near room temperature magnetic entropy changes in as-cast Gd100−xMnx (x = 0, 5, 10, 15, and 20 at.%) alloys

A series of Gd_100−xMn_x (x = 0, 5, 10, 15, and 20 at.%) alloys were prepared by arc-melting. The Curie temperature (T_C) associated with the ferromagnetic-paramagnetic transitions, derived from M-T curves, show decrease in T_C for as-cast alloys (∼279 K) as compared to as-cast Gd (∼292 K). No appreciable decrease in the |ΔS_M|_max values ∼4.6 J/kg K (0-2 T) and ∼8.6 J/kg K (0-5 T) were observed upon alloying Gd with Mn up to x ≤ 15 at.%. Refrigerant capacity (q) showed negligible variation ∼195 J/kg (0-2 T) and ∼450 J/kg (0-5 T) with increasing Mn (up to x ≤ 15 at.%) content. Similar values of |ΔS_M|_max and q coupled with ∼13 K decrease in T_C for as-cast Gd_100−xMn_x (0 ≤ x ≤ 15) alloys as compared to Gd, suggests expansion of working temperature region of Gd upon alloying with Mn up to 15 at.%. Low cost, adjustable T_C, favorable magnetocaloric properties make Gd_100−xMn_x alloys potential candidates as second-order transition based magnetic refrigerants for near room temperature air-conditioning and magnetic refrigeration.     

XPS study of Pr1−xCaxMnO3 (x = 0.2, 0.33, 0.4 and 0.84)

We have studied the Mn 2p, Ca 2p, and Pr 4d core levels of Pr_1-xCa_xMnO₃ (x = 0.2, 0.33, 0.4 and 0.84) as a function of x using X-ray photoelectron spectroscopy both at room temperature as well as 77 K. Suppression of chemical potential shifts have been observed at 77 K compared to that of room temperature spectra. We have discussed this result by considering the concept of phase separation.     

MOCVD growth and characterizations of BxAl1−xAs and BxAl1−x−yInyAs alloys

Zinc-blende B_xAl_1−xAs and B_xAl_1−x−yIn_yAs alloys have been grown on exactly oriented (0 0 1)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The influence of susceptor coating, growth temperature and gas-phase boron mole fraction on boron incorporation into AlAs has been comprehensively investigated. It has been found that boron incorporation into AlAs could be enhanced and the optimal growth temperature range of B_xAl_1−xAs alloys changed from 580 °C to 610 °C when SiC-coated graphite susceptors were replaced by the non-coated ones. In this study, the maximum boron composition x of 2.8% was achieved for the pseudomorphically strained B_xAl_1−xAs alloys. AFM measurements show that RMS roughness of B_xAl_1−xAs alloys increased sharply with the increase of gas-phase boron mole fraction. Raman spectra of B_xAl_1−xAs alloys show a linear increase of the BAs shift with boron composition x. Based on BAlAs deposition, bulk B_xAl_1−x−yIn_yAs (x = 1.9%) quaternary alloy was grown lattice-matched to GaAs successfully. Moreover, 10-period BAlAs/GaAs and BAlInAs/GaAs MQW heterostructures were also demonstrated.     

DC magnetization investigations in Ti1−xMnxO2 nanocrystalline powder

In the present paper, DC magnetization investigation on the insulating nanocrystalline powder samples of Ti_1−xMn_xO₂ (x = 0, 0.05, 0.10, and 0.15) prepared by simple chemical route is reported. Structural measurements revealed phase pure anatase structure of TiO₂ when x ≤ 0.05 and a mixture of anatase and rutile TiO₂ along with the signature of Mn₃O₄ phase for x > 0.05. Magnetic measurements exhibited the presence of ferromagnetic ordering at room temperature in samples having either small fraction of Mn or no Mn at all. This ferromagnetic signature is accompanied with paramagnetic contribution which is found to dominate with increase in Mn concentration. The Ti_1−xMn_xO₂ sample having highest Mn concentration of x = 0.15 showed nearly paramagnetic behavior. However, at low temperatures, additional ferrimagnetic ordering arising due to Mn₃O₄ (T_C = 42 K) is evidenced in the doped samples. Consistent with the XRD investigations, the isofield DC-magnetization measurements under field cooled and zero field cooled (FC-ZFC) histories corroborated the presence of Mn₃O₄ phase. Also, distinct thermomagnetic irreversibility has been observed above 42 K. These results are suggestive of presence of weak ferromagnetic ordering possibly due to defects related with oxygen vacancies.     

Strong correlation between structural, magnetic and transport properties of non-stoichiometric Sr2FexMo2−xO6 (0.8 ≤ x ≤ 1.5) double perovskites

Sr₂Fe_xMo_2−xO₆ (x = 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4 and 1.5 wt.%) (SFMO) double perovskite oxides of different compositions have been prepared by sol-gel method. These materials were subjected to X-ray diffraction and found that crystal structure changes from tetragonal to cubic around x = 1.2 wt.%. Lattice parameters and unit cell volume have been calculated using X-ray diffraction data. Magnetization studies have been carried out using Vibrating Sample Magnetometer ranging from −15 kOe to +15 kOe and saturation magnetization (M_s) has been determined. Electrical resistivity and magnetoresistance studies have been carried out in the magnetic field range of −40 kOe to +40 kOe keeping the temperature constant at 5, 150 and 300 K using standard four-probe method. Resistivity studies have also been carried out in the temperature ranging from 5 to 300 K keeping the magnetic field constant at 0, 10, 20 and 40 kOe. Maximum degree of Fe/Mo ordering (η_max) of SFMO has been calculated and compared with magnetic and transport properties. It has been found that there is a strong correlation between 3 parameters η_max, M_s and MR (%), i.e. all of them show a maximum at x = 1.0 wt.% and decreases as x deviates from 1.0 in SFMO. It has been also found that there is a different resistivity behavior between x ≤ 1.2 wt.% and x > 1.2 wt.% samples of SFMO. Semiconductor metal transition temperature was found to be maximum at x = 1.0 wt.%.     

Crystal structure and magnetic properties of DyCuxGa2−x (x = 0-2.0) antiferromagnetic compounds

DyCu_xGa_2−x (x = 0-2.0) compounds have been synthesized; meanwhile, their crystal structure and magnetic properties have been investigated by X-ray diffraction and magnetic measurements. The result shows that the continuous solid-solution series crystallize in three phases, with the structure types of AlB₂ (x = 0-0.2), DyCuGe (x = 0.3-0.6) and CeCu₂ (x = 0.7-2.0), respectively. The main reason to form the three structure types is considered to be the average atomic radius ratio of R to Cu/Ga. Magnetic-ordering transition of the compounds with x = 0.2-0.6 takes place at about 20 K and 113 K, while those of other compounds only takes place at about 20 K, which is attributed to the change of the near Dy-Dy distances and the ordered substitution of Ga by Cu.     

Microstructure, ferroelectric, and piezoelectric properties of (1 − x − y)Bi0.5Na0.5TiO3-xBaTiO3-yBi0.5Ag0.5TiO3 lead-free ceramics

Lead-free (1 − x − y)Bi_0.5Na_0.5TiO₃-xBaTiO₃-yBi_0.5Ag_0.5TiO₃ (BNT-BT-BAT-x/y, x = 0-0.10, y = 0-0.075) piezoelectric ceramics were synthesized by conventional oxide-mixed method. The microstructure, ferroelectric, and piezoelectric properties of the ceramics were investigated. Results show that a morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases of BNT-BT-BAT-x/0.04 ceramics is formed at x = 0.06-0.08. The addition of BAT has no obvious change on the crystal structure of BNT-BT ceramics while it causes the grain size of the ceramics to become more homogenous. Near the MPB, the ceramics with x = 0.06 and y = 0.05-0.06 possess optimum electrical properties: P_r ∼ 42.5 μC/cm², E_c ∼ 32.0 kV/cm, d₃₃ ∼ 172 pC/N, k_p ∼ 32.6%, and k_t ∼ 52.6%. The temperature dependences of k_p and polarization versus electric hysteresis loops reveal that the depolarization temperature (T_d) of BNT-BT-BAT-0.06/y ceramics decreases with increasing y. In addition, the polar and non-polar phases may coexist in the BNT-BT-BAT-x/y ceramics above T_d.     

Effect of the sintering temperature on the properties of nanocrystalline Ca1−xSmxMnO3 (0 ≤ x ≤ 0.4) powders

Nanocrystalline Ca_1−xSm_xMnO₃ (0 ≤ x ≤ 0.4) manganites were prepared by a soft chemical method (Pechini method) followed by auto-combustion and sintering in air at 1073 or 1473 K. Single-phase powders with general composition Ca_1−xSm_xMnO₃ were obtained after 18 h annealing. The particle and grain sizes of the substituted Sm-manganites did not exhibit variation with samarium content, but increase with increasing the sintering temperature. All manganites show two active IR vibrational modes near 400 and 600 cm⁻¹ characteristic of the BO₆ octahedron vibrations.For the samples sintered at T_s = 1473 K, the partial substitution of calcium by samarium in the CaMnO₃ phase induces a marked decrease in the electrical resistivity, in the temperature range of 300-900 K, and at the same time a metal-to-insulator transition occurs; for T_s = 1073 K all the samples present semiconductor behaviour. With the increase of the annealing temperature the grain size increases and a metal-semiconductor transition appears. The results can be ascribed to the Mn⁴⁺/Mn³⁺ ratio and particle grain size. The effects of particle size on the electrical properties can be attributed to the domain status, changes in the Mn-O-Mn bond angle and Mn-O bond length.     

Martensitic transformation and magnetic properties in high-Mn content Mn50Ni50−xInx ferromagnetic shape memory alloys

A series of Mn₅₀Ni_50−xIn_x (x = 9.75, 10, 10.25, 10.5 10.75, and 11) ferromagnetic shape memory alloys with Mn content as high as 50 at.% were prepared. The martensitic transformation (MT), magnetocaloric effect, and magnetoresistance in Mn₅₀Ni_50−xIn_x alloys were investigated. With x increasing from 9.75 to 11, the MT temperature decreased from 270 to 110 K and the Curie temperature of austenite remains relatively constant. Large positive magnetic entropy change and negative magnetoresistance were observed around MT temperatures in these alloys. Large magnetic entropy change and magnetoresistance would be ascribed to the temperature and magnetic field-induced MT in Mn₅₀Ni_50−xIn_x alloys.     

Substitution effect on metal-insulator transition in Cu(Ir1−xMx)2S4 (M = Sn, Hf)

A spinel CuIr₂S₄ exhibits a temperature-induced metal-insulator (M-I) transition at around 226 K. Non-magnetic substitution effect on the M-I transition, T_M-I, in Cu(Ir_1−xM_x)₂S₄ (M = Sn, Hf) has been studied on the focus of the rather low composition region of x. Magnetic property of Cu(Ir_1−xM_x)₂S₄ (M = Sn, Hf) has been examined experimentally. The T_M-I decreases with increasing x and the temperature hysteresis becomes unclear within the experimental errors. The step anomaly in the magnetic susceptibility smears out and the T_M-I becomes ill defined around x = 0.20 in Cu(Ir_1−xSn_x)₂S₄, and x = 0.10 in Cu(Ir_1−xHf_x)₂S₄, respectively. These substitutions play an important role in decoupling the spin-dimerization of Ir⁴⁺-Ir⁴⁺ in CuIr₂S₄, and lead the destruction of the metal-insulator transition.