Isothermal section of the Ag2S-PbS-GeS2 system at 300 K and the crystal structure of Ag2PbGeS4

The isothermal section of the Ag₂S-PbS-GeS₂ system at room temperature was investigated by XRD. The existence of two quaternary compounds, Ag₂PbGeS₄ and Ag_0.5Pb_1.75GeS₄, was confirmed, and the phase equilibria between the binary system components and the ternary and the quaternary compounds were determined. The crystal structure of Ag₂PbGeS₄ was studied using the single crystal X-ray diffraction. It was established that Ag₂PbGeS₄ crystallizes in an own structural type in non-centrosymmetric space group Ama2 with the lattice parameters a = 1.02390(4) nm, b = 1.02587(5) nm, c = 0.67701(3) nm.     

Crystal structure of the R3Ag1−δSiS7 (R = La, Ce, Pr, Nd, Sm, δ = 0.10–0.23) compounds

The crystal structure of the R₃Ag_1−δSiS₇ (R = La, Ce, Pr, Nd, Sm, δ = 0.10–0.23, space group P6₃, Pearson symbol hP23.80 − 23.54) compounds were determined by means of X-ray single crystal diffraction (a = 1.04168(8) nm, c = 0.57825(4) nm, R1 = 0.0116 for La₃Ag_0.90SiS₇; a = 1.0312(1) nm, c = 0.57395(7) nm, R1 = 0.0152 for Ce₃Ag_0.82SiS₇; a = 1.0248(1) nm, c = 0.57223(5) nm, R1 = 0.0105 for Pr₃Ag_0.85SiS₇; a = 1.0192(1) nm, c = 0.57020(6) nm, R1 = 0.0292 for Nd₃Ag_0.81SiS₇, a = 1.0100(1) nm, c = 0.56643(6) nm, R1 = 0.0208 for Sm₃Ag_0.77SiS₇. Gradual decrease of the silver amount in the series of chalcogenides was found.     

Interstitial solid solution Hf5GaxSn3 (x = 0-1)

Formation of an interstitial solid solution Hf₅Ga_xSn₃ (x = 0-1) based on the binary compound Hf₅Sn₃ (structure type Mn₅Si₃, Pearson symbol hP16, space group P6₃/mcm, a = 8.36562(6), c = 5.70775(4) Å from X-ray powder diffraction) was established at 600 °C. The crystal structure (structure type Hf₅CuSn₃, ordered derivative of Ti₅Ga₄, hP18, P6₃/mcm) was refined on X-ray single-crystal diffraction data for three compositions: Hf₅Ga_0.16(3)Sn₃ (a = 8.3288(12), c = 5.6988(11) Å), Hf₅Ga_0.53(2)Sn₃ (a = 8.4205(12), c = 5.7655(12) Å) and Hf₅GaSn₃ (a = 8.5564(12), c = 5.7859(12) Å). The Ga atoms occupy Wyckoff position 2b at the centres of Hf₆ octahedral interstices.     

Crystal structures and magnetic properties of iron (III)-based phosphates: Na4NiFe(PO4)3 and Na2Ni2Fe(PO4)3

Crystal structures from two new phosphates Na₄NiFe(PO₄)₃ (I) and Na₂Ni₂Fe(PO₄)₃ (II) have been determined by single crystal X-ray diffraction analysis. Compound (I) crystallizes in a rhombohedral system (S. G: R-3c, Z = 6, a = 8.7350(9) Å, c = 21.643(4) Å, R₁ = 0.041, wR₂=0.120). Compound (II) crystallizes in a monoclinic system (S. G: C2/c, Z = 4, a = 11.729(7) Å, b = 12.433(5) Å, c = 6.431(2) Å, β = 113.66(4)°, R₁ = 0.043, wR₂=0.111). The three-dimensional structure of (I) is closely related to the Nasicon structural type, consisting of corner sharing [(Ni/Fe)O₆] octahedra and [PO₄] tetrahedra forming [NiFe(PO₄)₃]⁴⁺ units which align in chains along the c-axis. The Na⁺ cations fill up trigonal antiprismatic sites within these chains. The crystal structure of (II) belongs to the alluaudite type. Its open framework results from [Ni₂O₁₀] units of edge-sharing [NiO₆] octahedra, which alternate with [FeO₆] octahedra that form infinite chains. Coordination of these chains yields two distinct tunnels in which site Na⁺.The magnetization data of compound (I) reveal antiferromagnetic (AFM) interactions by the onset of deviations from a Curie-Weiss behaviour at low temperature as confirmed by Mössbauer measurements performed at 4.2 K. The corresponding temperature dependence of the reciprocal susceptibility χ⁻¹ follows a typical Curie-Weiss behaviour for T > 105 K. A canted AFM state is proposed for compound (II) below 46 K with a field-induced magnetic transition at H ≈ 19 kOe, revealed in the hysteresis loop measured at 5 K. This transition is most probably associated with a spin-flop transition.     

Synthesis, crystal and band structures, and optical properties of a new framework mercury pnictides: [Hg4As2](InBr3.5As0.5) with tridymite topology

A new framework compound, [Hg₄As₂](InBr_3.5As_0.5) (1), has been prepared by the solid-state reaction of Hg₂Br₂ with elemental In and As at 450 °C. Compound 1 crystallizes in the space group P₆₃/mmc of the Hexagonal system with two formula units in a cell: a = b = 7.7408(6) Å, c = 12.5350(19) Å, V = 650.47(12) Å³. The crystal structure of 1 features a novel 3D framework, [Hg₄As₂]²⁺ with tridymite topology. The optical properties were investigated in terms of the diffuse reflectance and infrared spectra. The electronic band structure along with density of states (DOS) calculated by DFT method indicates that the present compound is semiconductor, and the optical absorption is mainly originated from the charge transitions from Br-4p and As-4p states to Hg-6s and In-5p states.     

Synthesis, structure, and properties of Li2Pb2CuB4O10 with isolated [CuB4O10] units

The copper borate Li₂Pb₂CuB₄O₁₀ has been synthesized in air by the standard solid-state reaction at temperature in the range 550-650 °C and the structure of Li₂Pb₂CuB₄O₁₀ was determined by single-crystal X-ray diffraction. Li₂Pb₂CuB₄O₁₀ crystallizes in the monoclinic space group C2/c (no. 15) with a = 16.8419(12), b = 4.7895(4), c = 13.8976(10) Å, and β = 125.3620(10)°, V = 914.22(12) Å³, and Z = 4, as determined by single-crystal X-ray diffraction. The Li₂Pb₂CuB₄O₁₀ structure exhibits isolated units of stoichiometry [CuB₄O₁₀]⁶⁻ that are built from CuO₄ distorted square planes and triangular BO₃ groups. The IR spectroscopy and thermal analysis investigations of Li₂Pb₂CuB₄O₁₀ are also presented.     

Peculiarities of component interaction in {Gd, Er}-V-Sn Ternary systems at 870 K and crystal structure of RV6Sn6 stannides

The phase equilibria in the Gd-V-Sn and Er-V-Sn ternary systems were studied at 870 K by means of X-ray and metallographic analyses in the whole concentration range. Both Gd-V-Sn and Er-V-Sn systems are characterized by formation of one ternary compound at investigated temperature, with stoichiometry RV₆Sn₆ (SmMn₆Sn₆-type, space group P6/mmm, a = 0.55322(3) nm, c = 0.91949(7) nm for Gd, a = 0.55191(2) nm, c = 0.91869(8) nm for Er). Solubility of the third component in the binary compounds was not observed. Compounds with the SmMn₆Sn₆-type were also found with Dy, Ho, Tm, and Lu, while YV₆Sn₆ compound crystallizes in HfFe₆Ge₆ structure type. All investigated compounds are the first ternary stannides with rare earth elements and vanadium.     

Large magnetic entropy change near room temperature in La0.7(Ca0.27Ag0.03)MnO3 perovskite

In this paper, the magnetic properties and magnetocaloric effect (MCE) of La_0.7(Ca_1−xAg_x)_0.3MnO₃ (x = 0, 0.1, 0.2, 0.7, and 1) powder samples are reported. Our polycrystalline compounds were synthesized using the solid state reaction method at high temperature. Magnetization measurements versus temperature showed that all our samples exhibited a paramagnetic to ferromagnetic transition with decreasing temperature. The Curie temperature, T_C, has been found to increase from ∼250 K for x = 0-270 K for x = 1. Ag doping weakens the first order phase transition, and at higher Ag doping, the phase transition is of second order. For the La_0.7(Ca_0.27Ag_0.03)MnO₃ composition, the maxima of the magnetic entropy changes from the applied magnetic field (ΔS_M) at 2 and 5 T are about 4.5 and 7.75 J/kg K, respectively, at the Curie temperature of ∼263 K. The relative cooling power (RCP) values without hysteresis loss are about 102 and 271 J/kg for the applied fields of 2 and 5 T, respectively. Due to the large ΔS_M, large RCP, and high Curie temperature, La_0.7(Ca_0.27Ag_0.03)MnO₃ is promising for application in potential magnetic refrigeration near room temperature.     

Microstructure, ferroelectric, and piezoelectric properties of (1 − x − y)Bi0.5Na0.5TiO3-xBaTiO3-yBi0.5Ag0.5TiO3 lead-free ceramics

Lead-free (1 − x − y)Bi_0.5Na_0.5TiO₃-xBaTiO₃-yBi_0.5Ag_0.5TiO₃ (BNT-BT-BAT-x/y, x = 0-0.10, y = 0-0.075) piezoelectric ceramics were synthesized by conventional oxide-mixed method. The microstructure, ferroelectric, and piezoelectric properties of the ceramics were investigated. Results show that a morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases of BNT-BT-BAT-x/0.04 ceramics is formed at x = 0.06-0.08. The addition of BAT has no obvious change on the crystal structure of BNT-BT ceramics while it causes the grain size of the ceramics to become more homogenous. Near the MPB, the ceramics with x = 0.06 and y = 0.05-0.06 possess optimum electrical properties: P_r ∼ 42.5 μC/cm², E_c ∼ 32.0 kV/cm, d₃₃ ∼ 172 pC/N, k_p ∼ 32.6%, and k_t ∼ 52.6%. The temperature dependences of k_p and polarization versus electric hysteresis loops reveal that the depolarization temperature (T_d) of BNT-BT-BAT-0.06/y ceramics decreases with increasing y. In addition, the polar and non-polar phases may coexist in the BNT-BT-BAT-x/y ceramics above T_d.     

Magnetic properties of the 1/1 approximant Ag42In42Gd16 to the icosahedral quasicrystal Ag-In-Gd

The structural, magnetic, and ¹⁵⁵Gd Mössbauer spectral properties of the 1/1 approximant Ag₄₂In₄₂Gd₁₆ to an icosahedral quasicrystal Ag-In-Gd are reported. Based on dc magnetic susceptibility measurements, it is shown that the studied compound develops no long-range magnetic order in the temperature range 1.8-300 K. The dc zero-field-cooled and field-cooled susceptibility data indicate that the 1/1 approximant Ag₄₂In₄₂Gd₁₆ is a spin glasss with freezing temperature T_f = 3.6(1) K. This is further confirmed by the analysis of the frequency dependence of T_f using the Vogel-Fulcher law and the dynamic scaling behavior near T_f. It is argued that the spin freezing process is a true equilibrium phase transition rather than a nonequilibrium phenomenon. The large frustration parameter of the studied compound indicates that it belongs to a category of strongly geometrically frustrated magnets. The ¹⁵⁵Gd Mössbauer spectra of the 1/1 approximant Ag₄₂In₄₂Gd₁₆ confirm that the Gd spins are frozen at 1.5 K and are fluctuating at 4.6 K. The Debye temperature of the 1/1 approximant Ag₄₂In₄₂Gd₁₆ is 200(1) K.     

Synthesis, crystal structures, and optical properties of NaCdPnS3 (Pn = As, Sb)

Two compounds NaCdPnS₃ (Pn = As (1), Sb (2)) were synthesized as transparent yellow and red platelets by reacting cadmium powder with the molten mixtures of Na₂S/As₂S₃/S and Na₂S/Sb/S at 500 °C. Both compounds are plagued with crystal twinning and acceptable crystal structure refinement could only be obtained by identifying the type of the twinning laws. NaCdAsS₃ (1) crystallizes in the monoclinic space group P2₁/n (no. 14) with a = 5.6561(8), b = 16.5487(15), c = 5.6954(8) Å, β = 90.315(11)°, and Z = 4. NaCdSbS₃ (2) crystallizes in the monoclinic space group C2/c (no. 15) with a = 8.1329(6), b = 8.1296(4), c = 17.2600(13) Å, β = 103.499(6)°, and Z = 8. The structures of both compounds feature a ²_∞[CdPnS₃]⁻ layer composed of [CdS₄] tetrahedra and [AsS₃] or [SbS₃] pyramidal units. Between the ²_∞[CdPnS₃]⁻ (Pn = As, Sb) layers the Na⁺ cations reside in a distorted octahedral environment of S atoms. Compound 1 is characterized with UV/Vis diffuse reflectance spectroscopy and IR and Raman spectra.     

Synthesis and structure determination of In3TeO3F7: An indium oxyfluorotellurate IV derived from W bronze structure with Te in hexagonal tunnels

After InTeO₃F and InTe₂O₅F recently described, a new compound In₃TeO₃F₇ is characterized in the In-Te^IV-O-F system. The crystal structure was determined by single X-ray diffraction and refined to R₁ = 0.028. In₃TeO₃F₇ crystallizes in orthorhombic space group Cmmm, a = 7.850(2) Å, b = 27.637(6) Å, c = 4.098(1) Å, V = 889.1(4) Å³ and Z = 4. Its structure consists of the stacking, via vertices, of identical layers composed of InF₆ and InO₂F₄ octahedra sharing corners and of InO₄F₃ pentagonal bipyramids sharing edges and vertices. The Te cations statistically occupy one or the other of two close sites located inside tunnels delimited by the In polyhedra and are bonded to F anions located in the same tunnels.The structure can be considered as an intergrowth of parallel strips of MIn₃F₁₀ and hexagonal tungsten bronze (c)-types. It is compared to other structures such as the bronze Sb_0.157WO₃, TeMo₅O₁₆ and Sb₂Mo₁₀O₃₁, phases also comprising Te⁴⁺ or Sb³⁺ inside hexagonal tunnels. The electronic lone pair of Te⁴⁺ is stereochemically active and a perfect O/F ordering occurs on the anionic sites.     

Impedance and modulus analysis of the (Na0.6Ag0.4)2PbP2O7 compound

The electrical properties of the (Na_0.6Ag_0.4)₂PbP₂O₇ compound were studied using the complex impedance spectroscopy in the temperature range (502-667 K). Grain interior, grain boundary and electrode-material interface contributions to the electrical response are identified by the analysis of complex plan diagrams. The imaginary part of the modulus at several temperatures shows a double relaxation peaks, furthermore suggesting the presence of grains and grain boundaries in the sample. An analysis of the dielectric constants ?′, ?″ and loss tangent tan(δ) with frequency shows a distribution of relaxation times. The dc conductivity of the material is thermally activated with an activation energy about 0.8 eV which is in the vicinity of the that obtained from tan(δ) (E = 0.7 eV) and modulus (E_m = 0.68 eV) studies.     

Phase structure and electrical properties of (0.8 − x) BaTiO3-0.2Bi0.5Na0.5TiO3-xBaZrO3 lead-free piezoceramics

Lead-free piezoelectric ceramics (0.8 − x)BaTiO₃-0.2Bi_0.5Na_0.5TiO₃-xBaZrO₃ (BT-BNT-xBZ, 0 ≤ x ≤ 0.08) doped with 0.3 wt% Li₂CO₃ were prepared by conventional solid-state reaction method. With the Li₂CO₃ doping, all the ceramics can be well sintered at 1170-1210 °C. The phase structure, dielectric, ferroelectric and piezoelectric properties of the ceramics were investigated. Results show that a morphotropic phase boundary (MPB) between tetragonal and pseudocubic phases exists at x = 0.03-0.04. The addition of Zr can improve the piezoelectric properties of BT-BNT ceramics. Furthermore, a relaxor behavior is induced and the tetragonal-cubic phase transition shifts towards lower temperatures after the addition of Zr. The ceramics with x = 0.03 possess the optimum electrical properties: d₃₃ = 72 pC/N, k_p = 15.4%, ?_r = 661, P_r = 18.5 μC/cm², E_c = 34.1 kV/cm, T_c = 150 °C.     

Preparation and electrical properties of Bi0.5Na0.5TiO3-BaTiO3-KNbO3 lead-free piezoelectric ceramics

Lead-free (1 − x)Bi_0.47Na_0.47Ba_0.06TiO₃-xKNbO₃ (BNBT-xKN, x = 0-0.08) ceramics were prepared by ordinary ceramic sintering technique. The piezoelectric, dielectric and ferroelectric properties of the ceramics are investigated and discussed. The results of X-ray diffraction (XRD) indicate that KNbO₃ (KN) has diffused into Bi_0.47Na_0.47Ba_0.06TiO₃ (BNBT) lattices to form a solid solution with a pure perovskite structure. Moderate additive of KN (x ≤ 0.02) in BNBT-xKN ceramics enhance their piezoelectric and ferroelectric properties. Three dielectric anomaly peaks are observed in BNBT-0.00KN, BNBT-0.01KN and BNBT-0.02KN ceramics. With the increment of KN in BNBT-xKN ceramics, the dielectric anomaly peaks shift to lower temperature. BNBT-0.01KN ceramic exhibits excellent piezoelectric properties and strong ferroelectricity: piezoelectric coefficient, d₃₃ = 195 pC/N; electromechanical coupling factor, k_t = 58.9 and k_p = 29.3%; mechanical quality factor, Q_m = 113; remnant polarization, P_r = 41.8 μC/cm²; coercive field, E_c = 19.5 kV/cm.     

Effects of Mn substitution on ferro- and piezoelectric properties of Bi0.86Sm0.14FeO3 thin films

The Bi_0.86Sm_0.14FeO₃ (BSFO) and Bi_0.86Sm_0.14Fe_1 − xMn_xO₃ (BSFMO) (x = 0.01, 0.03, 0.05) thin films were deposited on indium tin oxide/glass substrates via a metal organic deposition method. 1 at.% Mn doping leads to an evident reduction of the leakage current in BSFO film. More importantly, the Bi_0.86Sm_0.14Fe_0.99Mn_0.01O₃ film exhibits the lowest coercive field (E_c = 272 kV/cm), the largest remanent polarization (P_r = 53.6 μc/cm²) and the remanent out-of-plane piezoelectric coefficient (d₃₃ = 146 pm/V). However, further increase of Mn doping content results in the deterioration of the charge retaining capability and the piezoelectric properties of the films. The negative influence of high Mn doping contents was discussed based on the structure change and the contribution of irreversible movement of non-180° domain walls in the aged films.     

Effect of Ag-doping on crystal structure and high temperature thermoelectric properties of c-axis oriented Ca3Co4O9 thin films by pulsed laser deposition

Ag-doped Ca₃Co₄O₉ thin films with nominal composition of Ca_3−xAg_xCo₄O₉ (x = 0∼0.4) have been prepared on sapphire (0 0 0 1) substrates by pulsed laser deposition (PLD). Structural characterizations and surface chemical states analysis have shown that Ag substitution for Ca in the thin films can be achieved with doping amount of x ≤ 0.15; while x > 0.15, excessive Ag was found as isolated and metallic species, resulting in composite structure. Based on the perfect c-axis orientation of the thin films, Ag-doping has been found to facilitate a remarkable decrease in the in-plane electrical resistivity. However, if doped beyond the substitution limit, excessive Ag was observed to severely reduce the Seebeck coefficient. Through carrier concentration adjustment by Ag-substitution, power factor of the Ag-Ca₃Co₄O₉ thin films could reach 0.73 mW m⁻¹ K⁻² at around 700 K, which was about 16% higher than that of the pure Ca₃Co₄O₉ thin film.     

Growth, crystal structure and optical properties of layered dibarium cadmium diborate, Ba2Cd(BO3)2

A novel dibarium cadmium diborate, Ba₂Cd(BO₃)₂, has been successfully synthesized by standard solid-state reaction. Large sheet-like crystal with size up to 20 mm × 15 mm × 0.7 mm has been obtained using top-seed solution growth method. Ba₂Cd(BO₃)₂ crystallizes in the monoclinic space group C2/m with a = 9.6305(4) Å, b = 5.3626(3) Å, c = 6.5236(2) Å, β = 118.079(3)°, Z = 2. The crystal structure is composed of isolated [BO₃] triangles, [CdO₆] octahedra and [BaO₉] polyhedra. CdO₆ are vertex-connected with six BO₃ to form infinite _∞[Cd(BO₃)₂] layers extending in (0 0 1) plane, and two rows of Ba atoms closely occupy two side of _∞[Cd(BO₃)₂] layers to forming stoichiometric sheets. IR and transmittance spectrum of Ba₂Cd(BO₃)₂ were reported.