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采用气态源分子束外延(GSMBE)技术在InP衬底上生长发光波长为131μm的InAsP/InGaAsP应变补偿多量子阱和在GaAs衬底上生长GaAs/AlGaAs分布布拉格反射镜(DBR) ,并用直接键合技术将生长在InP基上的InAsP/InGaAsP应变补偿多量子阱结构组装到GaAs衬底上生长的DBR结构上,对其微结构和发光等特性进行了比较系统的研究.发现500~620℃的高温键合过程和后续的剥离工艺不仅没有引起量子阱发光效率的降低,反而由于键合过程中的退火改进了晶体质量,大大提高了量子阱的发光强度,其中620℃退火处理后的光致发光强度是原生样品的3倍. 相似文献
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采用气态源分子束外延(GSMBE)技术在InP衬底上生长发光波长为1.31μm的InAsP/InGaAsP应变补偿多量子阱和在GaAs衬底上生长GaAs/AlGaAs分布布拉格反射镜(DBR),并用直接键合技术将生长在InP基上的InAsP/InGaAsP应变补偿多量子阱结构组装到GaAs衬底上生长的DBR结构上,对其微结构和发光等特性进行了比较系统的研究.发现500~620℃的高温键合过程和后续的剥离工艺不仅没有引起量子阱发光效率的降低,反而由于键合过程中的退火改进了晶体质量,大大提高了量子阱的发光强度,其中620℃退火处理后的光致发光强度是原生样品的3倍. 相似文献
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采用气态源分子束外延(GSMBE)技术在InP衬底上生长发光波长为1.31μm的InAsP/InGaAsP应变补偿多量子阱和在GaAs衬底上生长GaAs/AlGaAs分布布拉格反射镜(DBR),并用直接键合技术将生长在InP基上的InAsP/InGaAsP应变补偿多量子阱结构组装到GaAs衬底上生长的DBR结构上,对其微结构和发光等特性进行了比较系统的研究.发现500~620℃的高温键合过程和后续的剥离工艺不仅没有引起量子阱发光效率的降低,反而由于键合过程中的退火改进了晶体质量,大大提高了量子阱的发光强度,其中620℃退火处理后的光致发光强度是原生样品的3倍. 相似文献
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对不同衬底上外延生长的HgCdTe薄膜进行了倒易点二维图测试,分析了外延层与衬底之间的结构取向关系以及晶格常数的失配现象.通过测定Cd1-yZnyTe衬底上的HgCdTe外延层的应变弛豫状况,获得了晶格匹配条件时衬底Zn组分的准确值.实验结果还表明:HgCdTe外延层与晶格失配的衬底之间存在着倾角,该倾角随失配度的增大而增大;当衬底失配度较小时,非对称倒易点二维图显示外延层并不处于全应变状态,而是处于应力部分释放状态;相反,当外延层晶格失配产生的应力全部释放时,外延层包含着较大的失配位错,摇摆曲线半峰宽展宽较大。 相似文献
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Chong-Yi Lee Meng-Chyi Wu Hung-Pin Shiao Tian-Tsorng Shi Wen-Jeng Ho 《Solid-state electronics》1999,43(12):2141-2146
In this article, we describe the growth and characterization for 1.3 μm InAsP/InP strained multiple quantum well (SMQW) laser diodes (LDs) with separate confinement heterostructure grown at 580°C by metalorganic chemical vapor deposition. The grown strained single quantum well (SSQW) stack and strained multiple quantum well (SMQW) structures are characterized using double-crystal X-ray diffraction and photoluminescence (PL) to confirm the structural and optical qualities for practical device applications. The InAsP/InP SSQW stack grown at 580°C appears to be extremely abrupt, uniform, free of misfit dislocations and narrow PL half width. Although the InAsP/InP SMQWs grown at 580°C maintain its structural integrity throughout the deposition sequence, the slightly broader PL half width for InAsP/InP SMQW structure is attributed to the dislocations resulted from a large net strain. Laser emission can be achieved by using the InAsP/InP SMQWs and the lasing wavelength is in a good agreement with our designed structure. The experimental data of broad-area and ridge waveguide LDs are described in detail. 相似文献
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InAsP/InP multiquantum well structures were grown by solid source molecular beam epitaxy using either As2 or As4 over a substrate temperature range of 420–535°C. All quantum wells had similar arsenic compositions with a 2.2% standard
deviation regardless of arsenic species or growth temperature. This temperature insensitivity of arsenic incorporation in
InAsP is in sharp contrast to InGaAsP in which arsenic composition is very sensitive to both substrate temperature and gallium
percentage in the compound. The insensitivity of arsenic incorporation in InAsP to substrate temperature may result from growth
in a phosphorus rich condition with indium as the only available cation. 相似文献
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An experimental way for the thermal characterization of semiconductor lasers based on I-V method under pulse driving conditions has been developed, with which the thermal characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide MQW laser chips have been investigated. The results show that, by measuring and analyzing the I-V characteristics under appropriate pulse driving conditions at different heat sink temperatures, the thermal resistance of the laser diodes could be easily deduced. The driving current and junction voltage waveforms of the laser chips under different pulse driving conditions are also discussed. 相似文献
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利用新型全固源分子束外延技术 ,对 1 .5 5 μm波段的 In As P/ In Ga As P应变多量子阱结构的生长进行了研究。实验表明 ,较低的生长温度或较大的 / 束流比有利于提高应变多量子阱材料的结构质量 ,而生长温度对材料的光学特性有较大的影响。在此基础上生长了分别限制多量子阱激光器结构 ,制作的氧化物条形宽接触激光器实现了室温脉冲工作 ,激射波长为 1 5 63 nm,阈值电流密度为 1 .4k A/ cm2 。这是国际上首次基于全固源分子束外延的 1 .5 5 μm波段 In As P/ In Ga As P多量子阱激光器的报道 相似文献
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S. P. Ahrenkiel M. W. Wanlass J. J. Carapella L. M. Gedvilas B. M. Keyes R. K. Ahrenkiel H. R. Moutinho 《Journal of Electronic Materials》2004,33(3):185-193
Low-bandgap, lattice-mismatched GaxIn1−xAs (GaInAs) grown using InAsyP1−y (InAsP) compositional-step grades on InP is a primary choice for lightabsorbing, active layers in high-efficiency thermophotovoltaic
(TPV) devices. The GaInAs/InAsP double heterostructures (DHs) show exceptional minority carrier lifetimes of up to several
microseconds. We have performed a characterization survey of 0.4–0.6-eV GaInAs/InAsP DHs using a variety of techniques, including
transmission electron microscopy (TEM). Dislocations are rarely observed to thread into the GaInAs active layers from the
InAsP buffer layers that terminate the graded regions. Nearly complete strain relaxation occurs in buried regions of the InAsP
grades. The buffer-layer strain prior to deposition of the active layer is virtually independent of the net misfit. Foreknowledge
of this buffer-layer strain is essential to correctly lattice match the buffer to the GaInAs active layer. 相似文献
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LI Dai-zong YU Zhuo CHEN Bu-wen HUANG Chang-jun LEI Zhen-lin YU Jin-zhong WANG Qi-ming 《半导体光子学与技术》1999,5(3):134-138
Using double crystal X-rays diffraction (DCXRD) and atomic force microscopy (AFM), the results of Ge x Si 1- x grown by UHV/CVD from Si 2H 6 and SiH 4 are analyzed and compared. Adsorbates can migrate to the energy-favoring position due to the slow growth rate from SiH 4. In this case, a Si buffer that isolates the effect of substrate on epilayer could not be grown, which results in a pit penetrating into epilayer and buffer. The FWHM is 0.055° in DCXRD from SiH 4. The presence of diffraction fringes is an indication of an excellent crystalline quality. The roughness of the surface is improved if grown by Si 2H 6; however, the crystal quality of the Ge x Si 1- x material became worse than that from SiH 4 due to much larger growth rate from Si 2H 6. The content of Ge is obtained from DCXRD, which indicates the growth rate from Si 2H 6 is largest, then GeH 4, and that from SiH 4 is least. 相似文献
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Uncooled 10 Gbit/s direct modulation of high-power 1.3 μm InAsP/InGaAsP directly modulated multiple quantum well distributed feedback (DFB) lasers is demonstrated. High resonant frequencies and high efficiency at 85°C are obtained due to the high epitaxial quality of ternary, aluminium-free, quantum wells. Floor-free transmission on 90 and 140 ps/nm within ITU recommendations are demonstrated 相似文献
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C. A. Tran J. T. Graham J. L. Brebner R. A. Masut 《Journal of Electronic Materials》1994,23(12):1291-1296
We present results of the growth of InAsxP1−x/InP strained heterostructures by low pressure metalorganic vapor phase epitaxy. A large incorporation of arsenic into the
InAsP ternary was observed using tertiarylbutylarsine as precursor. High resolution x-ray diffraction, photoluminescence,
and optical absorption measurements for InAsP/InP strained multiple quantum wells reveal that the InAsP/InP interface is very
sensitive to growth interruption. A systematic study of a growth in terruption sequence designed to improve the InAs/InP interface
was carried out. For nonoptimal growth interruption procedures a large density of interface states is created, probably as
a consequence of compositional modifications within the interface region. We find that the absorption spectrum may reveal
a significant density of interface states. Thus, photoluminescence on its own is insufficient to characterize the interface
roughness even for structures showing narrow low-temperature photoluminescence peaks. We also observe an enhancement of the
As content for structures grown on InP (001) relative to those simultaneously grown on InP(001) two degrees off toward [100],
which suggests that the composition of As in the ternary is limited by its surface diffusion. 相似文献
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C. Bocchi C. Ferrari P. Franzosi G. Fornuto S. Pellegrino F. Taiariol 《Journal of Electronic Materials》1987,16(4):245-250
X-ray double crystal diffractometry has been used to assess the crystal quality of InGaAsP/ InP single heterostructures grown
by liquid phase epitaxy. Diffraction profiles have been obtained in the parallel non-dispersive configuration, using Cu Kα1 radiation, 004 symmetric reflection and a perfect InP crystal as a monochromator. Several structures, with different lattice
mismatches, ranging from positive to negative values, have been investigated. The epilayer Bragg peak was found to be as narrow
as theoretically predicted, if thickness effects are taken into account. Pendellosung fringes have been observed at the low
angle side of the peak, thus the epilayer thickness could be measured. Finally, the sample curvature has been evaluated from
the broadening of the substrate Bragg peak and, when the broadening was sufficiently large, a good agreement with that calculated
from the elastic theory has been found. All the results demonstrate that the structures investigated are characterized by
a very high crystal quality. 相似文献
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An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed. 相似文献