Graphene-based photonic devices for soft hybrid optoelectronic systems

Graphene, a two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has attracted appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. One of these properties, graphene's outstanding tensile strength, allows graphene-based electronic and photonic devices to be flexible, stretchable, and foldable. In this work, we propose a novel platform technology and architecture of graphene-based flexible photonic devices for the development of high-performance flexible devices and components. We investigated the characteristics of the graphene-based plasmonic waveguide for the development of high-performance optical interconnection in flexible human-friendly optoelectronic devices. We concluded that graphene-based photonic devices have huge potential for the development of next-generation human-friendly flexible optoelectronic systems.     

Single-walled carbon nanotube thin film emitter-detector integrated optoelectronic device

We use the suspended single-walled carbon nanotube (SWNT) thin film technology to assemble the first prototype of an integrated optoelectronic SWNT device, a SWNT optocoupler in which a SWNT emitter and a SWNT detector couple two electrical circuits by the transmission of a signal through the optical channel. Our experiments show that the integrated SWNT emitter/SWNT detector is an ideal couple in which the broadband wavelength character of the emission matches the broadband detection capabilities.     

Chatoyant: a computer-aided- design tool for free-space optoelectronic systems

Chatoyant is a tool for the simulation and the analysis of heterogeneous free-space optoelectronic architectures. It is capable of modeling digital and analog electronic and optical signal propagation with mechanical tolerancing at the system level. We present models for a variety of optoelectronic devices and results that demonstrate the system's ability to predict the effects of various component parameters, such as detector geometry, and system parameters, such as alignment tolerances, on system-performance measures, such as the bit-error rate.     

Information metric as a design tool for optoelectronic imaging systems

The resolution of images acquired by a digital camera is limited to the camera's sampling interval. The images' visual quality is affected by the level of the degradations caused by the imaging process from acquisition to display, including quantization, coding, transmission, and digital filtering. The information metric is presented as a design and an assessment tool for high-resolution digital imaging systems and all their subsystems. It associates gains in the acquired information with improvements in resolution, sharpness, and clarity of the final image representation. It demonstrates the need to integrate a digital filtering module that accounts for the optoelectronic imaging degradations in the optoelectronic imaging design and assessment. It further demonstrates the metric's sensitivity by the assessment of the combined imaging processes as a unified system.     

Reliability issues in hybrid optoelectronic interconnect systems

New technologies such as optical interconnects have been developed to realize very high speeds and massive data throughput. However, key reliability problems must be solved before commercialization occurs. Addressing the reliability issue, this paper presents the performance degradation of hybrid optoelectronic interconnect systems due to coefficient of thermal expansion mismatch between the optoelectronic component and the microlens and low cycle thermal fatigue of flip-chip solder bond between the photodiode array and the receiver electronic circuitry.     

Computer-aided design for optoelectronic systems: introduction to the feature issue

Welcome to the first special issue of Applied Optics on computer-aided design for optoelectronic systems. This special issue stemmed from our realization of the need for dialogue between optoelectronic system designers and computer-aided-design developers, as well as from the realization that various research groups are developing or, in some instances, have already developed and commercialized such tools. Our goal for this special issue is to enhance this type of dialogue by showing to the optoelectronic system design community the current state of optoelectronic computer-aided-design tools.     

Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devices

Reactive ion etching (RIE) was used for the fabrication of GaAs/AlGaAs optoelectronic devices (laser diodes and photodetectors) for optical interconnect applications. Smooth, vertical sidewalls with a smooth surface at the field were obtained after optimizing RIE conditions in BCl₃-formed plasma. Accurate in-situ monitoring of the etching process was realized by laser interferometry end-point detection. This led to good process control and reproducibility of the demanding fabrication of the optoelectronic devices. The RIE etching process did not affect the electrical properties of the device by increasing the surface recombination currents. Lasers with etched mirrors exhibited a threshold current density of 970 A cm⁻², which is one of the best values ever reported. The feasibility of a simple technology for the fabrication of optoelectronic circuits, based on a BCl₃ RIE process for laser mirror etching, has been demonstrated.     

Heterogeneous modelling tools for integrated production systems

The general instability in the environment of enterprises is the main reason for their quest for more and more reactivity, in order to adapt their products in time to market. The consequences of this are changes in products, processes, and the organization of companies. Development of the 'information system' within manufacturing departments makes the efficiency of methods to manage this system a critical point. Our aim here is to develop this efficiency, making possible integrated use of several modelling tools within a single project. We provide a classification of links that are possible between modelling tools. This classification is partially applied to links between IDEF0 and CIM-OSA.     

Bistatic atmospheric optoelectronic communication systems (field experiments)

Some results of field experiments on atmospheric optoelectronic communication carried out in spring-summer-fall period in 2013 are considered. Experiments were performed to estimate the possibility of test signal transfer through bistatic communication channels extending up to 17 km under conditions of cloudless and cloudy atmospheres at radiation wavelength of 510.6 nm.     

用于大截面传像光纤束的折衍混合光学系统设计

在大截面传像束前置光学物镜设计中,采用“负-正”型式的像方远心光路结构,很好地解决了镜头轴外像差校正和像面照度均匀性问题,同时使镜头结构紧凑、小型化。给出了前置物镜设计实例:工作波长0.8~1.1μm,焦距5mm,相对孔径为1:3.84,光学长度为47mm,视场角为60°。在光学耦接镜设计中采用物方远心光路结构,引入二元光学透镜,通过理论计算和ZEMAX光学软件优化,给出工作波长0.8~1.1μm,焦距33.6mm,光学长度为63.5mm,采用一个衍射面的耦接镜设计实例。该设计结果适用于单丝直径16μm,截面直径6mm的光纤传像束。     

Polysiloxanes for optoelectronic applications

During the past few years, polysiloxanes have been extensively researched on optimizing the physical and electronic properties of organic polymer semiconductors. Polysiloxanes display their advantages including good solubility in common organic solvents, good film-forming ability, fair adhesion to various substrates and excellent resistance to thermal, chemical and irradiation degradations. In this review, we focus on the fundamental design and synthesis strategies of bonding polysiloxanes with organoelectronic groups. The characterization of polysiloxanes will be briefly introduced. Specifically, we summarize the recent advances of the utilization of polysiloxanes as organic light-emitting diodes (OLEDs), solar cells, electrical memories and liquid crystalline materials. Finally, several perspectives related to polysiloxanes materials for organoelectronic applications are proposed based on the reported progress and our own opinion.     

Development of a method and apparatus for measuring the light-reflecting characteristics of infrared optoelectronic systems

Questions related to the study of the light-reflecting characteristics of optoelectronic systems that function in the infrared domain are considered. A method and combined structural and functional optical apparatus scheme is proposed that makes it possible to perform measurements of the light-reflecting characteristics of modern infrared devices; a mathematical apparatus for processing the measurement results is also proposed. The expected value of the error of such measurements is determined. __________ Translated from Izmeritel’naya Tekhnika, No. 9, pp. 24–28, September, 2007.