微重力ZnTe：Cu 晶体生长及阴极荧光光谱(CL)分析

利用Te熔剂方法,在天宫二号飞船上成功地生长了ZnTe:Cu晶体.微重力下生长的晶体质量优于地面生长的晶体,相同实验条件下,天宫二号上生长的晶体尺寸明显大于地面尺寸.通过阴极荧光光谱(CL)无损检测技术测试了5 kV、15 kV、25 kV高压下的ZnTe:Cu晶体的阴极荧光图谱及光谱.     

嘉陵江水体平水期水质的三维荧光光谱监测分析

嘉陵江是重庆的重要饮用水源,其水质与城市居 民的生活和生态环境息息相关。为研究其水质及其变化,在重庆主城区嘉陵江段平水期3~5月,采用三维荧光技术对7个取样点的水体样品进行 分析,得到了溶解性有机质(DOM)含量变化引起的三维荧光光谱变化数据,水体样品存在 两个荧光峰分 布,荧光峰Ⅰ激发波长λ_ex=330~350nm,发射波长λ_em=400~450nm;荧光峰Ⅱ激发波长 E_ex=270~300nm, 发射波长λ_em=320~350nm。结果 表明,取样江段水样三维荧光谱中的荧光峰主要由类腐殖 质和类蛋白质形成;同时,由于受到气温、降雨、地理环境等因素的影响,3-5月各河段水 样的荧光指数(f450/50)分别 在1.41~1.57、1.30~1.47和1.42~1.68之间,由此可以判断,采样时 间段内水质污染主要是陆源性输入形成。     

有机白光LED光转换膜的荧光光谱

以AB胶(AB)及线性低密度聚乙烯(POLY)为分散系,将诺丹明6G(POLY)、核黄素(L)及溴甲酚紫(BCP)染料以不同浓度分散在其中,用热熔法制备了光转换膜,测量了它们在460nm及500nm激发下的荧光光谱。以POLY为分散系的膜荧光强度比以AB为分散系的膜低,AB是较好的分散系。L、R及AB质量比为1：1：10^3的膜有机光转换膜在500nm光激发下发出的荧光与剩余绿光的合成光偏橙黄色;L、R、BCP及AB质量比为1：1：1：10^4的有机光转换膜在460nm光激发下发出的荧光与剩余绿光的合成光偏蓝白;L、R、BCP及AB质量比为1：1：1：10^4的有机光转换膜在500nm光激发下发出的荧光与剩余绿光的合成光与白炽灯颜色接近。以氙灯为光源照射荧光膜,其荧光强度在1h内保持不变。     

导数同步荧光光谱结合遗传优化算法测定鸭蛋蛋清中庆大霉素含量

为实现鸭蛋蛋清中庆大霉素(GM)残留含量的快速测定与检测模型精度的提高,应用遗传算法(GA)筛选导数同步荧光光谱特征波长,用遗传-支持向量回归(GA-SVR)建立鸭蛋蛋清中GM残留含量的预测模型。首先分析了样本的三维同步荧光光谱和确定了本实验研究的波长差Δλ为120nm;然后利用sym5小波的2层分解对一阶导数同步荧光光谱进行去噪处理,并利用GA筛选出了14个荧光特征波长;最后利用GA优化了SVR的径向基核函数(RBF)参数(c,g,p),进而比较了GA-SVR、PLS和MLR 3种预测模型的预测能力,研究表明,以GA-SVR模型的预测能力最强,其预测集的决定系数(R2)和均方根误差(RMSEP)分别为0.983 0和1.149 4mg/L。实验结果表明,GA能有效筛选出鸭蛋蛋清中GM的荧光特征波长和提高GA-SVR模型预测精度。     

基于独立成分分析的复杂光谱的定量分析

基于独立成分分析(ICA)算法,对超短脉冲激光与气体相互作用所产生的复杂的非线性荧光光谱数据进行了有效的特征提取,进而对空气中含有的3种杂质气体在不同浓度下的光谱进行了预测,得到的结果与实测值相比较误差很小.对这3种气体共计27组光谱数据进行浓度值的定量预测,达到了满意的实验结果.     

枸杞中维生素B2固体粉末的荧光光谱检测研究

利用日本岛津RF-5301PC荧光分光光度计,对枸杞子粉末中的维生素B2(VB2)直接进行荧光光谱检测,采集的光谱范围在530～650nm波段。采用MATLAB数值微分和高斯函数拟合方法,得到在激发波长为480nm、峰值波长为563nm时的荧光光谱信息;通过数值积分和线性拟合,得到荧光强度沿波长的积分与VB2含量呈良好的线性关系,其相关系数为0.998 43。实验测定枸杞粉末VB2含量为1.28±0.17μg/g,并阐释了枸杞子粉末荧光光谱红移的原因。研究表明:这种固体粉末荧光光谱检测方法具有快速、直接、简单和环保等优点,对药品成份检测、食品安全监测等领域的应用具有重要的参考价值。     

磷酸铁锂/小尺寸石墨烯复合锂离子电池阴极材料的制备及储能特性

磷酸铁锂(LiFePO4,LFP)是一种良好的阴极材料,然而导电率低和锂离子扩散系数小的缺点限制了其在高倍率下的电化学性能.寻找规模化工艺制备高倍率的锂离子电池阴极材料,对于高倍率锂离子电池的制备和应用意义重大.采用模板刻蚀法制备尺寸小于200 nm的小尺寸氧化石墨烯(SGO),用湿法球磨和高温固相法有效地制备碳包覆的...     

Er3+/Yb3+共掺氟氧微晶玻璃的光谱性质及Judd-Ofelt理论分析

制备了新的Er3+/Yb3+共掺氟氧硅酸盐微晶玻璃,测试了荧光光谱、吸收光谱。研究了氟氧化物微晶玻璃中Er3+离子的上转换发光特性,采用Judd-Ofelt理论对样品光谱进行了分析,拟合得到了强度参数,Ω2=4.4756,Ω4=1.0059,Ω6=1.2098。计算了样品的辐射寿命、跃迁几率、荧光分支比等光谱参数。结果表明,样品通过热处理形成了氟化物微晶,降低了声子能量,提高了上转换效率。绿光、红光上转换荧光强度比玻璃样品增强约2到3倍。Judd-Ofelt理论分析表明Er3+/Yb3+共掺氟氧微晶玻璃具有较高的上转换效率,是制作微型激光器和三维立体显示的优良材料之一。     

Deep level electronic structure of ZnSe/GaAs heterostructures

We performed 1—2 keVcathodoluminescence measurements and He-Ne and HeCd excited photoluminescence studies of ZnSe/GaAs( 100) heterostructures grown by molecular beam epitaxy. Our goal was to investigate the deep level electronic structure and its connection with the heterojunction band offsets. We observed novel deep level emission features at 0.8, 0.98, 1.14, and 1.3 eV which are characteristic of the ZnSe overlayer and independent in energy of overlayer thickness. The corresponding deep levels lie far below those of the near-bandedge features commonly used to characterize the ZnSe crystal quality. The relative intensity and spatial distribution of the deep level emission was found to be strongly affected by the Zn/Se atomic flux ratio employed during ZnSe growth. The same flux ratio has been shown to influence both the quality of the ZnSe overlayer and the band offset in ZnSe/GaAs heterojunctions. In heterostructures fabricated in Se-rich growth conditions, that minimize the valence band offset and the concentration of Se vacancies, the dominant deep level emission is at 1.3 eV. For heterostructures fabricated in Zn-rich growth conditions, emission by multiple levels at 0.88,0.98, and 1.14 eV dominates. The spectral energies and intensities of deep level transitions reported here provide a characteristic indicator of ZnSe epilayer stoichiometry and near-interface defect densities.     

Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature

This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity and analyzes the optical characterization of cavity modes at room temperature. Single InAs/InGaAs quantum dots (QDs) layer was embedded in a GaAs waveguide layer grown on an Al_0.7Ga_0.3As layer and GaAs substrate. The patterning of the structure and the membrane release were achieved by using electron-beam lithography, reaction ion etching, inductively coupled plasma etching and selective wet etching. The micro-luminescence spectrum is recorded from the fabricated nanocavities, and it is found that some high-order cavity modes are clearly observed besides the lowest-order resonant mode is exhibited in spite of much high rate of nonradiative recombination. The variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed to improve the probability of achieving spectral coupling of a single QD to a cavity mode.     

Low temperature grown be-doped InAIP band offset reduction layer to p-type ZnSe

To solve the difficulty of achieving low resistance ohmic contact to p-type ZnSe, the use of an intermediate p-type InAlP layer to p-type ZnSe as a valence band offset reduction layer is studied by gas source molecular beam epitaxy. It is found that hole concentrations as high as 2 × 10¹⁸ cm⁻³ are easily obtained for p-type InAlP layers grown on GaAs even at low temperature of 350°C, although a higher Be cell temperature is required than that for a 500°C grown p-type InAlP due to the decreased electrical activity of Be in InAlP. Despite the very high Be concentrations, the Be precipitation/segregation is not observed. It was difficult to obtain the same hole concentration of InAlP layers grown on ZnSe as that on GaAs. However, the insertion of only several monolayers of GaAs between ZnSe and InAlP makes it possible to avoid faceting growth of InAlP and to improve the electrical properties of Be-doped InAlP grown on ZnSe. These results suggest that the Be-doped InAlP layer can be used as an intermediate layer to form the low resistance ohmic contact to p-type ZnSe.     

Degradation of ZnSe/ZnTe multiquantum well contacts to p-ZnSe

The work presented in this paper studied the degradation of ZnTe/ZnSe multiquantum well contacts to p-ZnSe under high current loading (1000 to 1500 A/cm²). During degradation, localized heating (up to 200°C > the bulk substrate and heat sink) was observed to occur at the point were electrical power was supplied. Auger data from degraded samples indicated that due to the localized heating, Zn and Te from the ZnTe layers and Zn from the ZnSe layer diffused through the Au metallization to the samples surface. In addition, thermal stress from the localized heating generated micro-cracks in the ZnSe which acted as high diffusivity paths for impurities. Rectangular defects were also found to form in the degraded region. These defects were oriented to the micro-cracks and had similar geometries as dislocation patches (dark line defects) which have been reported to form in the quantum well region of degraded ZnSe based laser devices. The similarities between the rectangular defects and dark line defects suggest the formation of similar dislocation patches in the quantum well region of the multiquantum well contacts.     

应变异质结ZnSe／Si2（110）的价带带阶的第一原理计算

本文从第一原理出发,用Linearized-Muffin-Tin(LMTO)能带方法对应变超晶格（ZnSe)n/(Si2)n(110)(n=2-7)进行自洽计算,在此基础上采用冻结势计算了应变异质结ZnSe/Si2(110)的价带带阶,得到其理论值为0．93eV,说明该异质结的价带带阶值较大,由其构成的量子阱对空穴运动有较强的限制作用。     

Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride

Traditional epitaxial growth of GaN by metalorganic vapor phase epitaxy (MOVPE) on mismatched substrates such as sapphire or SiC produces a columnar material consisting of many hexagonal grains ∼0.2–1.0 μm in diameter. The epitaxial-lateral-overgrowth (ELO) process for GaN creates a new material: single-crystal GaN. We have studied the ELO process for GaN grown by MOVPE in a vertical flow rotating substrate reactor. Characterization consisted of plan-view SEM and vertical-cross-section TEM studies, which revealed a large reduction in dislocation density in the overgrown regions of the GaN. Panchromatic and monochromatic cathodoluminescence images and spectra were used to study the spatial variation of the optical properties within the GaN ELO samples. The effects of growth temperature and stripe material on the overgrown layers were examined. Through the use of a higher substrate temperature during growth and the use of a SiN_x stripe material, the overgrown crystal shape has a smooth 2D top surface with vertical sidewalls. Applying a second ELO step, rotated by 60°, over a fully coalesced ELO layer yields a further reduction of defects in GaN overgrown surfaces.     

Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system

In a low-pressure metalorganic vapor phase epitaxy process, we used dc-plasma activated nitrogen to dope ZnSe, grown with ditertiarybutylselenide and dimethylzinc-triethylamine. The nitrogen concentration of up to 2 × 10¹⁸ cm⁻³ in the doped layers can be adjusted by the growth temperature, the dc-plasma power, and the N₂ dopant flow. Due to the high n-type background carrier concentration of the order of 10¹⁷ cm⁻³ in undoped samples, the doped layers show n-type conductivity or were semi-insulating because of an additional compensation by hydrogen incorporated with a concentration of the order of 10¹⁸ cm⁻³. A planar doping scheme was applied to reduce this hydrogen incorporation by one order of magnitude, although H₂ was used as carrier gas.     

The Use of Cathodoluminescence during Molecular Beam Epitaxy Growth of Gallium Nitride to Determine Substrate Temperature

In-situ cathodoluminescence (CL) measurement during growth of gallium nitride (GaN) by molecular beam epitaxy (MBE) was investigated for determining substrate temperature. Cathodoluminescence was easily observed from room temperature up to and beyond typical temperatures used during growth. Determination of the peak energy of the CL spectrum allows unambiguous determination of the substrate temperature. Temperature drift and reproducibility issues during growth of GaN were observed using the in-situ CL measurement.     

GaAs衬底上（ZnS）n／（ZnSe）n（001）超晶格的光学性质

本文用Ｌｉｎｅａｒｉｚｅｄ－Ｍｕｆｆｉｎ－Ｔｉｎ Ｏｒｂｉｔａｌｓ能带方法，计算ＧａＡｓ衬底上（ＺｎＳ）ｎ／（ＺｎＳｅ）ｎ（００１）超晶格的能带结构。计算中采用外加调整势进行带隙修正，从而得到较准确的能带结构和波函数。在此基础上计算了超晶格系统的光学介电函数虚部ε２（ω）。结果表明，该超晶格系统的光学性质结合了ＺｎＳ和ＺｎＳｅ体材料光学性质的特点，在相当宽的能量范围内有较好的光谱响应，并且该超晶格     

Electrical and photo-luminescence properties of ZnSe epitaxial layers grown on GaAs (100) by atmospheric pressure MOVPE: The role of substrate temperature

Epitaxial layers of ZnSe ranging in thickness from 5μm to 30 μm have been grown on GaAs (100) substrates over the temperature range 240° C to 340° C by atmospheric pressure MOVPE employing dimethylzinc and hydrogen selenide. An optimum growth temperature of 280 ± 5° C has been identified and when grown at this temperature the ZnSe epitaxial layers exhibit low resistivity (ρ_{298 K} ≤ 10 ohm · cm), a low compensation ratio (θ_{298 K} = 0.27), a carrier mobility (μ_{298 K}) of 250 ±10 cm²V^-1s^-1) and aren-type (n _{298 K} = 8.0 × 10¹⁴ cm^-3). The ratio of photoluminescence intensity measured at 298K and at 12 K is high (10⁴) and is dominated by a sharp emission due to excitons bound to neutral donors at 2.7956 eV. Mass spectrometric investigations of the chemical reactions occurring inside the reactor in the presence of the GaAs substrate indicate significant surface-controlled reactivity in the region of 280° C.