离子注入法掺杂聚乙炔的初步探索

聚乙炔(CH)x是一种简单的共轭有机导电高分子材料。1975年日本白川首先用高浓度的Ti(OBu)_4-AlEt_3体系在-78℃下定向聚合得到了均匀的、具有高结晶度的顺式(CH)x薄膜。1977年白川与美国MacCDiarmid等合作,发现掺杂能改善(CH)x的导电性能。后来又发现掺入不同的杂质可使(CH)x显示n型或P型半导体的特性。聚乙炔薄膜具有物理上准一维金属膜型的一些特殊性质,因而引起物理学家的广泛兴趣。1980年美国Su、Schrieffer和Heeger提出了聚乙炔的孤立子(Soliton)导电模型,并用这种模型成功地阐述了一些实验现象。(CH)x的原料便宜,合成简单,具有广阔的应用前景。人们预期可以把聚乙炔应用于制备太阳能电池、蓄电池及塑料半导体器件等。     

聚苯胺的离子注入掺杂研究

研究了聚苯胺的离子注入掺杂对导电性的影响。用红外和紫外谱法探讨了聚苯胺的氧化态，本征态和还原态经离子注入后，其结构可能发生的变化。结果表明，聚苯胺的三种态的离子注入均为还原过程。讨论了离子注入掺杂的导电机制。     

离子注入植物种子的生物效应研究

用３５－１８０ｋｅＶ离子束对玉米、水稻、小麦、黑麦等材料种子进行了氮或磷离子注入。结果发现，在被处理的当代种子中，发芽率，生长速度，植物株型等方面均出现了变异；对染色体行为的观察发现有丝分裂基本正常，减数分裂出现异常，对注入离子在种子内的分布进行了ＲＢＳ测量，并以ＴＲＩＭ程序进行理论估算。对离子束作为诱变源的前景及机理进行了讨论。     

钇离子注入不锈钢的抗腐蚀研究

叙述了在复旦大学加速器实验室３０ｋｅＶ同位素分离器上建立的一套离子注入装置。在该装置上已获得几十微安的Ｙ、Ｃｅ、Ｈｏ、Ｓｍ、Ｎｄ、Ｌａ、Ｙｂ等稀土离子束流。被离子注入的面积为φ２０ｍｍ，表面均匀性好于３％，并对Ｙ离子注入不锈钢以改善其抗腐蚀性能进行了初步研究。     

中国科学院物理研究所的离子束分析及离子注入改性研究

介绍了中国科学院物理研究所离子束研究室的主要设备、分析方法、离子注入材料改性研究以及近年来在半导体材料、高Ｔｃ超导材料、环保等领域中的研究工作。     

离子注入磁记录材料的试验研究

离子注入用于金属材料表面改性,特别是提高金属表面的耐磨损、耐腐蚀能力的试验研究已开始向工业应用的方向过渡。目前这方面的研究成果已在英国、美国、日本、苏联等国申请了专利,其中用于磁头表面处理的专利申请就占有两项。为此,我们分别试验了硼离子、氮离子注入坡莫合金磁头材料,研究其组织、结构的变化,测量了坡莫合金离子注入前后的磁性能、表面硬度、表面光洁度、耐磨损性能以及成品磁头离子注入前后的电声性能,取得了一些初步的试验结果。     

离子注入胞嘧啶核苷酸的释磷动力学研究

离子注入下胞嘧啶（ＣＭＰ）核苷酸释放无机磷具有快反应和慢反应两种方式。研究了温度对慢反应过程的影响,发现辐射诱发的不稳定磷酸酯释磷反应的特殊模式：在３５３Ｋ以下和３６８Ｋ条件下分别遵循一级反应和二级反应方式,给出了反应的支这方程和速率常数。     

POLYMER DIODES MADE OF ION IMPLANTED POLYACETYLENE FILMS

Polyacetylene films were doped with FeCl3 and implanted with 30 k'eV K+ ions. Physical changes to the films were examined by a series of measurements, which include the four-probe test, infrared ray absorption and 2 MeV He+ particle elastic recoil dettection and Rutherford backscattering. The chemical dopants (Fe+++ and Cl-) were redistributed after the implantation and the different species (K+. Fe+++ and Cl-ions) formed p - n junctions at the implantation depths. The implanted films exhibited desirable Ⅰ-Ⅴ characteristics, with current densities as high as 600 mA/cm- at 3V and back - to - forward ratio of current over 300. The polymer diodes kept their behavior for over 60 days. Discussions on the results were given in detail.     

Raman scattering studies of oxygen implanted CdS thin films prepared by vacuum evaporation

CdS thin films prepared by vacuum evaporation method were implanted with oxygen ions at the energy of 80 keV to different doses. Raman scattering studies of the as-deposited and implanted films reveal the shift in the Raman peak position of A₁(LO) mode towards higher wave number on implantation. The area under the peak increases with dose initially, and then decreases at higher doses. The shift of the Raman peak to higher wave numbers has been attributed to the replacement of sulphur atoms by the lighter oxygen atoms.     

离子注入SOI薄膜材料的制备及性能

ＳＯＩ－ＣＭＯＳ电路具有高速度、低功能、抗辐照等优点。用氧、氮离子注入硅中,得到性能良好的ＳＩＭＯＸ和ＳＩＭＮＩ薄膜材料。用扩展电阻、霍耳效应和深能级瞬态谱等多种方法研究了ＳＯＩ材料表面界面的电学性能。并对各种方法进行了讨论。结果显示,用分步注入和分步退火制备的ＳＯＩ材料大大地改善了材料的电学性能。     

Carbon ion-implanted optical waveguides in Nd:YLiF4 crystal: Refractive index profiles and thermal stability

We report on the optical planar waveguides in Nd:YLiF₄ laser crystals fabricated by 6.0 MeV C³⁺ ion implantation at doses of 1 × 10¹⁵ or 2.5 × 10¹⁵ ions/cm², respectively. The refractive index profiles, which are reconstructed according to the measured dark mode spectroscopy, show that the ordinary index had a positive change in the surface region, forming non-leaky waveguide structures. The extraordinary index is with a typical barrier-shaped distribution, which may be mainly due to the nuclear energy deposition of the incident ions into the substrate. In order to investigate the thermal stability of the waveguides, the samples are annealed at temperature of 200–300 °C in air. The results show that waveguide produced by higher-dose carbon implantation remains relatively stable with post-irradiation annealing treatment at 200 °C in air.     

Modification of DLC films by Ni ions implantation

Enhanced diamond-like carbon (DLC) multilayer films were produced by a method of alternating the magnetic filtered vacuum cathode arc deposition and the metal vapor vacuum arc (MEVVA) implantation of Ni⁺ ions. The microstructure and mechanical properties of these multilayer films were studied by XPS, Raman, SEM, AFM, XRD, nano-intender and internal stress measurement. The results reveal that with the increasing dose of implanted Ni⁺ ions, the sp³ contents are declining and reduction of the nanohardness and release of the internal stress are observed.     

Pb离子辐照注碳a-SiO2薄膜的光致发光性能

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,进行120 keV C离子注入和950 MeV Pb离子辐照,用荧光光谱分析样品发光特性的改变.结果发现,C离子注入和高能Pb离子辐照均能显著影响样品的发光特性,且荧光光谱的改变强烈依赖于注入和辐照剂量,预示不同注入和辐照剂量将导致不同的发光结构形成.对注入和辐照造成薄膜...