共查询到18条相似文献,搜索用时 125 毫秒
1.
2.
3.
4.
5.
一种适用于高速电路中SSN抑制的紧凑型电磁带隙新结构 总被引:2,自引:2,他引:0
该文根据电磁带隙(EBG)结构的带隙形成机理以及共面EBG结构的等效电路,提出了一种适用于高速电路中同步开关噪声(SSN)抑制的紧凑型EBG结构,使用Ansoft HFSS对该结构进行仿真分析。仿真结果表明在抑制深度为-30 dB时,阻带范围为0.6-6.4 GHz,阻带带宽为5.8 GHz,与传统的L-bridge结构相比,阻带带宽增加了1.8 GHz,相对带宽增加了45%,实现了较低的带隙中心频率以及较宽的阻带带宽,并用Ansoft Designer通过时域仿真验证该结构具有较好的信号完整性。 相似文献
6.
7.
针对谐振电磁带隙(Electromagnetic Band Gap, EBG)结构带宽比较窄的问题,通过研究EBG的等效电路模型,提出了一种新颖的垂直级联型EBG结构.同时使用Ansoft HFSS软件对所设计的结构进行仿真分析及验证.仿真结果表明:新结构在抑制深度为-40 dB时,阻带范围为0.75~15.7 GHz,具有14.95 GHz噪声抑制的超带宽特性.与同尺寸的传统单过孔Mushroom EBG结构相比,带宽增加3.65 GHz,相对带宽提高32.3 %.新结构为改善EBG结构抑制噪声带宽提供一种理论参考的新方法. 相似文献
8.
本文通过对电磁带隙(EBG)结构等效电路的分析,研究了展宽其带隙带宽的方法,提出了一种新型的实现方法——组合单元法.以金属贴片表面螺旋电感的EBG结构为冽,验证了该方法的有效性和正确性,为解决EBG结构存在的带隙带宽较窄的问题提供了一种新的思路。 相似文献
9.
以磁性材料(JV-5)作为基板,设计双L型结构的微带天线,带宽是普通基板的2倍以上,尺寸缩小了40%。在此基础上引入电磁带隙(EBG)结构,设计了一种基于磁性基板EBG结构的微带天线,该EBG结构采用接地板腐蚀性,即在地板上腐蚀出周期H型和圆形结构,采用电磁仿真软件HFSS14.0进行仿真设计。结果显示,与非磁性材料做基板的微带天线相比,EBG结构磁性材料具有小型化和宽频化突出优点,相对带宽达到10%以上,增益方面略有降低,引入EBG结构后能在一定程度上减小了天线的尺寸同时增大了天线的带宽,改善了天线的增益和辐射特性。 相似文献
10.
以磁性材料(JV-5)作为基板,设计双L型结构的微带天线,带宽是普通基板的2倍以上,尺寸缩小了40%。在此基础上引入电磁带隙(EBG)结构,设计了一种基于磁性基板EBG结构的微带天线,该EBG结构采用接地板腐蚀性,即在地板上腐蚀出周期H型和圆形结构,采用电磁仿真软件HFSS14.0进行仿真设计。结果显示,与非磁性材料做基板的微带天线相比,EBG结构磁性材料具有小型化和宽频化突出优点,相对带宽达到10%以上,增益方面略有降低,引入EBG结构后能在一定程度上减小了天线的尺寸同时增大了天线的带宽,改善了天线的增益和辐射特性。 相似文献
11.
A novel compact electromagnetic bandgap structure is presented. The coplanar meander line inductance is adopted to increase the surface equivalent inductance in order to improve the bandwidth of the bandgap and reduce unit cell size. The measured results show that 54.1% relative bandwidth and 25.2% reduction in resonant frequency could be obtained. 相似文献
12.
设计了一种由对称L型缺陷微带结构实现的新型频率可调带通滤波器,并给出了相应的等效电路;对具有该结构的单频带带通滤波器的S参数频响特性进行了仿真与分析,并计算了耦合系数;依据上述结构设计制作了一种可调谐的双频带带通滤波器,并对其谐振频率的可调性进行了分析。结果表明:所制滤波器的谐振频率分别为2.4 GHz和3.5 GHz,相对带宽分别为4.63%和4.95%,有效电路尺寸仅为26.0 mm×1.2 mm。该L型缺陷微带结构带通滤波器具有结构简单紧凑、尺寸小、频率选择性好和谐振频率独立可调等优点。 相似文献
13.
《Photonics Technology Letters, IEEE》2006,18(18):1964-1966
A chirped phase-shifted structure is demonstrated for compact multiwavelength distributed feedback (DFB) fiber laser at room temperature for the first time. The chirped structure provides separated resonance cavities and then the stable multiwavelength operation. The equivalent phase shift method is demonstrated to realize the desired chirp and phase shifts simply and flexibly. A 44-pm-spaced dual-wavelength DFB fiber laser is then achieved experimentally, which is the narrowest spacing ever reported for a compact multiwavelength fiber laser. 相似文献
14.
Two kinds of compact electromagnetic band gap (EBG) structures are designed. A two layer compact EBG structure configured with cross spiral shape line inductors and interdigital capacitors is first presented. Because of its significantly enlarged equivalent inductor and capacitance, the period of the lattice is approximately 4.5% of the free space wavelength. By insetting several narrow slits in the ground plane, the bandwidth of the main bandgap is enhanced by nearly 19%. Further effort has been made for designing a three layer compact EBG structure. Simulation results show that its period is reduced by about 26% compared to that of proposed two layer EBG structure, and the bandwidth of the main bandgap is about 3 times as that of the proposed two layer EBG structure. The detailed designs including a two layer compact 3×7 EBG array with and without defect ground plane and the three layer EBG array are given and simulation results are presented. 相似文献
15.
为了实现高选择性的小型双频段滤波器,该文基于LC等效电路分析法和微波网络分析法,通过建立等效模型、进行等效电路分析及对传输模型的导纳矩阵分析,提出了一种工作在GSM/WLAN的新型低温共烧陶瓷(LTCC)双频滤波器结构。该结构采用介电常数5.9、层厚0.1 mm、型号为Ferro A6的LTCC介质基板加工,在7 mm × 7 mm × 0.5 mm的尺寸下实现了各通带两边都有传输零点的高选择性双频滤波特性。本研究丰富和发展了LTCC双频滤波器的设计方法。 相似文献
16.
17.
18.
Zlatica Marinkovi? Giovanni CrupiDominique M.M.-P. Schreurs Alina CaddemiVera Markovi? 《Microelectronic Engineering》2011,88(10):3158-3163
Nowadays, FinFET represents a new and promising transistor structure for the aggressive downscaling of the CMOS technology. Typically, the small-signal modeling for FinFET is based on compact models or on equivalent circuit representations. As an alternative to such approaches, a small-signal behavioral model based on artificial neural networks is developed in this paper. Particular attention is devoted to modeling the low-frequency kinks of the scattering parameters, due to the lossy silicon substrate. The model is efficient and accurate, as confirmed by the comparison between measured and simulated microwave behavior. 相似文献