共查询到20条相似文献,搜索用时 15 毫秒
1.
Kazuki Tajima Yasusei Yamada Shanhu Bao Masahisa Okada Kazuki Yoshimura 《Vacuum》2010,84(12):1460-1465
An electrochromic switchable mirror on a flexible plastic sheet was developed taking into consideration practical use, low cost and high adaptability. The mirror has a multilayer of Mg4Ni/Pd/Al/Ta2O5/WO3, which was fabricated by DC magnetron sputtering on an ITO-coated PET sheet. In the previous research, when the mirror was exposed to air for a long period of time, its optical switching properties disappeared. This work focused on the mechanism of degradation of the mirror in different environments. When the mirror was stored in a desiccator for 50 days as a means of preservation, its switching speed was seven times higher as compared with the mirror exposed to air. It is also well known that oxygen and moisture in air easily penetrate PET sheets. The features of the PET sheet strongly affected the durability of the optical switching layer. When the state of the optical switching layer was changed to nonmetallic due to the formation of oxide and hydroxide, the optical switching properties almost disappeared. 相似文献
2.
Moon YK Kim WS Kim KT Shin SY Park JW 《Journal of nanoscience and nanotechnology》2012,12(4):3341-3345
Here we demonstrate the fabrication of SnO(x) thin-film transistors (TFTs), where SnO(x) thin films are deposited as an active channel layer by DC magnetron sputtering. We analyzed the effects of the oxygen partial pressure ratio and post-deposition heat treatment (PDHT) on the characteristics of the SnO(x) thin films. We found improved performance of the TFTs obtained by using interface modification with the optimized deposition condition of SnO(x) thin films. These results are helpful for fabricating oxide-TFTs, including simple binary oxide semiconductors, as an active channel layer. 相似文献
3.
4.
Pulsed DC magnetron sputtering was used in this study to prepare lead zirconate titanate (Pb(ZrxTi1−x)O3, PZT) thin films. A single metallic target was used for the deposition onto a Pt/Ti/SiO2/Si substrate and parameters such as: pulse frequency, duty cycle, O2/Ar flow ratio controlled so as to analyze the effect of the parameters on thin film deposition rate, crystalline structure and morphology. After the deposition, the thin film was annealed in a rapid thermal annealing (RTA) furnace. The experimental results showed that, when the pulse frequency was in the range of 10 kHz-100 kHz, along with the lowering of frequency and the oxygen argon flow rate ratio, the deposition rate gradually increased and the formation of PZT thin film perovskite phase was enhanced; however, if the oxygen argon flow rate ratio was too high, it caused the PZT thin film to generate a pyrochlore phase. However, when the duty cycle was in the range of 95%-75%, the highest deposition rate and better perovskite phase could be obtained in the range of 75%-80%. 相似文献
5.
6.
Indium-tungsten-oxide (IWO) films were prepared by dc magnetron sputtering at ambient substrate temperature (Ts). Characteristics of the films were compared with those of In2O3–SnO2 (ITO) thin films prepared under the same condition. The sputter-deposited IWO films have entirely amorphous structure with an average transmittance of over 85% in the visible range and exhibit a minimum resistivity of 3.2 × 10–4cm at W content [W/(In + W)] of 0.57 at.%. An in-situ heating X-ray diffraction measurement have shown that the crystallization temperature of IWO films is higher than those of ITO films (150–160C) and increases with increasing W content. This enabled a smooth amorphous surface of IWO films as compared with a rough surface of partially crystallized ITO films as revealed by an atomic force microscopy. IWO films are useful for transparent electrode of organic light emitting diode and polymer LCDs because of the low resistivity, high transparency and smooth surface obtainable by the conventional dc magnetron sputtering at room temperature. 相似文献
7.
Birkett M. Brooker J. Penlington R. Wilson A. Tan K. 《Science, Measurement & Technology, IET》2008,2(5):304-309
Thin film resistors have been manufactured to evaluate the electrical performance characteristics of AlCuMo thin films. The films were prepared on Al2O3 substrates at room temperature as a function of Mo concentration by DC magnetron sputtering and were then annealed at various temperatures in air and N2 atmospheres. The effect of annealing temperature on the electrical properties of the films was systematically investigated. Increase in Mo content produced a decrease in temperature coefficient of resistance (TCR), an increase in resistivity (r) and an improvement in long term stability (DV/V) of the films. TCR varied from negative to positive and further improvements in resistance stability of the films were also achieved through increasing annealing temperature in both air and N2 atmospheres. A temperature region is proposed where `near zero? TCR (ppm/8C) and long term stability of better than 0.2% can be realised. 相似文献
8.
《Vacuum》2013
Nanostructured vanadium oxide (nano-VOx) films were prepared on indium-tin oxide (ITO) glass substrate at low temperature by means of direct current (DC) reactive magnetron sputtering from pure vanadium target in Ar + O2 atmosphere. Field emission scanning electron microscope (SEM) reveals that the VOx film is composed of spheroidal nanoparticles whose diameters are in the range of 20–40 nm. This nano-VOx film shows a broad hysteresis loop whose width is as large as 41.6 °C. Moreover, the metal-insulator transition (MIT) can also be triggered by Joule heat produced by electrical current through the ITO sublayer. Compared to traditional heating of the sample by heating plate, this Joule heating is more efficient and convenient, which enables potential applications of this nano-VOx film on ITO conductive glass in compact storage devices. 相似文献
9.
直流磁控溅射制备铝薄膜的工艺研究 总被引:3,自引:0,他引:3
采用直流磁控溅射方法,以高纯Al为靶材,高纯Ar为溅射气体,在玻璃衬底上成功地制备了铝薄膜,并对铝膜的沉积速率、结构和表面形貌进行了研究。结果表明:A1膜的沉积速率随着溅射功率的增大先几乎呈线性增大而后缓慢增大;随着溅射气压的增加,沉积速率先增大,在一定气压时达到峰值后继续随气压的增大而减小。X射线衍射图谱表明Al膜结构为多晶态;用扫描电子显微镜对薄膜进行表面形貌的观察,溅射功率为2600W,溅射气压为0.4Pa时制备的Al膜较均匀致密。 相似文献
10.
靶基距对直流反应磁控溅射制备TiO2薄膜光学性质的影响 总被引:1,自引:0,他引:1
应用DC(直流)反应磁控溅射设备在硅基底上制备TiO2薄膜,在固定的电源功率下,氩气流量为42.6 sccm,氧流量为15 sccm,溅射时间为30 min的条件下,通过控制靶基距改变TiO2薄膜的光学性质.应用n&k Analyzer 1200测量,当靶基距增加时薄膜的平均反射率降低,同时反射低谷先短波后长波之后再短波;靶基距对消光系数k影响较大;随着靶基距的增加薄膜的折射率出现了下降的趋势,但当靶基距达到一定的量值时折射率的变化趋于稳定.通过XRD和SEM表征发现,随着靶基距的增加TiO2的晶体结构由金红石相向锐钛矿相转变,薄膜表面的颗粒度大小由粗大变得微小细密. 相似文献
11.
应用DC(直流)反应磁控溅射设备在硅基底上制备TiO2薄膜,在固定的电源功率下,氩气流量为42.6
sccm,氧流量为15 sccm,溅射时间为30 min的条件下,通过控制靶基距改变TiO2薄膜的光学性质.应用n&k
Analyzer 1200测量,当靶基距增加时薄膜的平均反射率降低,同时反射低谷先短波后长波之后再短波;靶基距对消光系数k影响较大;随着靶基距的增加薄膜的折射率出现了下降的趋势,但当靶基距达到一定的量值时折射率的变化趋于稳定.通过XRD和SEM表征发现,随着靶基距的增加TiO2的晶体结构由金红石相向锐钛矿相转变,薄膜表面的颗粒度大小由粗大变得微小细密. 相似文献
12.
A. Sivasankar Reddy P. Sreedhara Reddy S. Uthanna G. Mohan Rao 《Journal of Materials Science: Materials in Electronics》2006,17(8):615-620
Thin films of copper aluminum oxide (CuAlO2) were prepared on glass substrates by dc magnetron sputtering at a substrate temperature of 523 K under various oxygen partial
pressures in the range 1 × 10−4–3 × 10−3 mbar. The dependence of cathode potential on the oxygen partial pressure was explained in terms of oxidation of the sputtering
target. The influence of oxygen partial pressure on the structural, electrical and optical properties was systematically studied.
p-Type CuAlO2 films with polycrystalline nature, electrical resistivity of 3.1 Ω cm, Hall mobility of 13.1 cm2 V−1 s−1 and optical band gap of 3.54 eV were obtained at an oxygen partial pressure of 6 × 10−4 mbar. 相似文献
13.
采用直流反应磁控溅射的方法,溅射高纯钛靶在ITO石英衬底上制备了TiO2薄膜.用XRD、Raman光谱、AFM和紫外-可见光分光光度计分别测试了TiO2薄膜的结构、表面形貌和紫外-可见光透射谱,研究了工艺因素中溅射气压、氧氩比和退火温度对薄膜结构的影响.采用C(胶)/TiO2/ITO三层结构研究了锐钛矿TiO2薄膜的紫外光响应.实验结果表明:较低的溅射气压、合适的氧氩比和较高的退火温度有利于锐钛矿TiO2薄膜的结晶.在2 V的偏压下,锐钛矿TiO2薄膜的紫外光响应上升迟豫时间约为3 s,稳定光电流可达到2.1 mA,对紫外光的灵敏性和稳定的光响应表明TiO2薄膜有可能成为一种新的紫外光探测器材料. 相似文献
14.
直流反应溅射TiO2薄膜的制备及其性能研究 总被引:3,自引:1,他引:3
采用直流反应磁控溅射的方法,溅射高纯钛靶在ITO石英衬底上制备了TiO2薄膜.用XRD、Raman光谱、AFM和紫外-可见光分光光度计分别测试了TiO2薄膜的结构、表面形貌和紫外-可见光透射谱,研究了工艺因素中溅射气压、氧氩比和退火温度对薄膜结构的影响.采用C(胶)/TiO2/ITO三层结构研究了锐钛矿TiO2薄膜的紫外光响应.实验结果表明较低的溅射气压、合适的氧氩比和较高的退火温度有利于锐钛矿TiO2薄膜的结晶.在2
V的偏压下,锐钛矿TiO2薄膜的紫外光响应上升迟豫时间约为3 s,稳定光电流可达到2.1
mA,对紫外光的灵敏性和稳定的光响应表明TiO2薄膜有可能成为一种新的紫外光探测器材料. 相似文献
15.
Jung-pil Noh Gyu-bong Cho Ki-taek Jung Won-gyeong Kang Chung-wan Ha Hyo-jun Ahn Jou-Hyeon Ahn Tae-hyun Nam Ki-won Kim 《Materials Research Bulletin》2012,47(10):2823-2826
LiCoO2 thin films were fabricated on Al substrate by direct current magnetron sputtering method. The effects of Ar/O2 gas rates and annealing temperatures were investigated. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction, Raman scattering spectroscopy and field emission scanning electron microscopy. The as-deposited LiCoO2 thin films exhibited amorphous structure. The crystallization starts at the annealing temperature over 400 °C. However, the annealed films have the partially disordered structure without completely ordered crystalline structure even at 600 °C annealing. The electrochemical properties of the LiCoO2 films were investigated by the charge–discharge and cycle measurements. The 500 °C annealing film has the highest capacity retention rate of 78.2% at 100th cycles. 相似文献
16.
Highly conducting and transparent ZnO : Al thin films were grown by off-axis rf magnetron sputtering on amorphous silica substrates
without any post-deposition annealing. The electrical and optical properties of the films deposited at various substrate temperatures
and target to substrate distances were investigated in detail. Optimized ZnO : Al films have conductivity of 2200 S cm-1 and average transmission in the visible range is higher than 85%. The conductivity and mobility show very little temperature
dependence. 相似文献
17.
We have developed an all-solid-state switchable mirror of Mg4Ni/Pd/Ta2O5/WO3/ITO on glass. Each material of Mg4Ni, Pd, and Ta2O5 in the device acts as an optical switching, a proton injector and a solid electrolyte, respectively. The initial state of the device is a reflective state as a mirror and the state changes to a transparent one by applying voltage. In this work, solid electrolyte of Ta2O5 thin film was deposited on the WO3/ITO/glass substrate by reactive DC magnetron sputtering with Ar/O2 mixture gases. The effect of Ar/O2 ratio on the electrochemical property of Ta2O5 thin film and the optical switching property of the device were investigated. The film deposited at Ar/O2 of 4.7 had better electrochemical property than that of other films. The transmittance at a wavelength of 670 nm of the device using Ta2O5 thin film deposited at Ar/O2 of 4.7 was reached from the reflective state of 0.1% to the transparent state of 44% less than 15 s by applying voltage of 5 V. The device showed a stable durability of up to 1000 switching cycles. 相似文献
18.
Characterization of CNx films prepared by twinned ECR plasma source enhanced DC magnetron sputtering
The DC discharge of a planar magnetron was enhanced by twinned microwave electron cyclotron resonance plasma source. The magnetic cusp geometry formed in the processing chamber was used for plasma confinement. The sputtering discharge characteristics was investigated and a combined mode of voltage and current was observed at a pressure as low as 0.007 Pa. Carbon nitride thin films were synthesized using this method. Characterization of the films showed that the deposition rate was high, and the films were composed of a single amorphous carbon nitride phase with N/C ratio close to that of C3N4, with the bonding mainly of C---N type. 相似文献
19.
Ying Sun Yuanyuan Na Lihua Chu Yongchun Wen Man Nie 《Materials Research Bulletin》2010,45(9):1230-1233
Antiperovskite Mn3CuNx film was prepared by dc reactive magnetron sputtering. It is the first time to report an antiperovskite ternary nitride film. The composition and crystal structure were characterized by energy dispersive spectroscope (EDS), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). From the XRD pattern, it displays a (1 0 0) preferential orientation. A comparative study on the properties of Mn3CuNx film and the bulk sample was presented. The film exhibits an antiferromagnetic to paramagnetic transition around 135 K, similar with the bulk sample. With temperature, the resistivity of the film shows semiconductor-like behavior throughout the measured temperature region, whereas there is an abrupt drop around the magnetic transition for the bulk. The variable temperature XRD results indicate that the film did not display any structure transition and shows a normal linear thermal expansion property around the magnetic transition. 相似文献