垂直分层空时码的几种检测算法比较

垂直分层空时码（V-BLAST）是贝尔实验室提出的一种基于多入多出（MIMO）传输方式的空时码系统,其检测算法是MIMO系统的有效检测方法。首先介绍V-BLAST系统的信号模型,在此基础上应用不同的信号估计准则推导出不同的检测算法,最后通过仿真实验对各种算法的性能和优缺点进行了分析和比较。     

V-BLAST系统的一种最大分集检测算法

讨论了V-BLAST系统的算法，给出一种基于叠代信号处理算法（ISIP算法），可以看作是V-BLAST系统许多算法的一种延伸。该算法是利用接收端最大分集来改善V-BLAST系统每层接收信号的仿真结果显示，与原V—BLAST算法相比具有更好的误码性能。     

LTE下行链路信道采用扩展单环MIMO信道模型进行建模的研究

本文主要研究如何对LTE下行链路中的信道采用扩展的单环多入多出（Multiple Input Multiple Output,MIMO）信道模型进行建模,并进行性能的研究。在假设信道状态信息（Channel State Information,CSI）已知的情况下研究该扩展的单环MIMO模型的系统误符号率（Symbol Error Ratio,SER）性能,进而讨论天线的相关性对性能的影响,并分别针对采用空时块码（Space Time Block Code,STBC）、垂直分层空时码（Vertical-BLAST,V-BLAST）以及空频块码（Space Frequency Block Code,SFBC）编码的系统误符号（SER）性能进行比较。仿真结果显示,通过增加在eNodeB(eNB)端的天线元间距,能够得到比增加用户设备（UE）端天线元间距更优异的性能。从空时块码、垂直分层空时码、空频块码三种编码方式的比较中可以发现,空频块码（SFBC）的性能最优,垂直分层空时码（V-BLAST）的性能最差。     

垂直分层空时码系统信号检测算法的研究

主要介绍了基于多输入多输出（MIMO）传输方式的垂直分层空时码系统（V—BLAST）空时码系统的检测算法,并把它与传统的MIMO信号检测算法进行了分析和比较,仿真得出相关结论。     

多入多出(MIMO)分层空时码算法研究

概述了一种新的编码和信号处理技术—分层空时码(BLAST)的编解码算法,并比较了各自的优缺点。由于D-BLST的计算复杂度太大,重点分析了工程上具有实用价值的V-BLAST算法,文章的最后给出了仿真结果和结论。     

完美空时分组码及其高性能解码算法

根据完美空时分组码（STBC）的结构特点提出了等效的垂直-贝尔实验室空时（V-BLAST）模型，在对该模型进行最小均方误差-判决反馈均衡（MMS-DFE）预处理之后，提出一种有边界约束的Fano解码器。该解码器可达到几乎最大似然（ML）性能，在很大的信噪比区域范围内其复杂度比目前典型的解码器低，而且该解码器可用于发射天线数大于接收天线数的系统。直接在复数域计算和处理，该解码器适用于任何星座形式。该解码器可用于任何能等效成V-BLAST模型的空时系统。仿真结果表明了该解码器的有效性。     

MIMO-OFDM系统中V-BLAST检测算法的比较

V-BLAST是一种基于多输入多输出传输的空时码系统，其检测算法是MIMO—OFDM系统的有效检测方法。本文介绍了应用于MIMO—OFDM信号检测的多种V-BLAST检测算法，并根据MATLAB仿真结果对各种算法的性能和优缺点进行了分析和比较。     

基于Golden检测算法的V-BLAST性能仿真分析

垂直分层空时码系统(V-BLAST)是贝尔实验室提出的一种基于多输入多输出(MIMO)传输方式的空时码系统。本文介绍了V-BLAST的系统模型、信道容量和Golden检测算法,并把该算法的仿真结果和单发单收系统的性能进行了比较。仿真结果显示V-BLAST系统比传统通信系统的频谱利用率要高。     

STBC-VBLAST混合系统的研究

针对贝尔实验室分层空时码（BLAST）容量性能好和正交空时分组码（STBC）分集增益高的特点,阐述了两系统混合研究的优点和可能。首先简要地介绍了三种常见BLAST发射空时数据流结构的工作原理,分析了3种常用的BLAST混合STBC的系统结构。以垂直BLAST（VBLAST）为对象,总结了常见的VBLAST的译码算法。然后介绍了QR译码原理,提出了一种基于QR分解的循环迭代算法,并将其引入STBC-VBLAST混合系统。仿真实验表明：STBC-VBLAST混合系统在保留VBLAST高频谱利用率的同时,也改善了系统的抗衰落性能,适当的循环迭代次数,系统抗衰落性能改善更加明显。最后综述了STBC-VBLAST混合系统未来应用和实现可能遇到的问题和面临的挑战。     

一种新型的非正交空时编码设计

空时分组码和BLAST系统是两种利用多发多收传输的典型的空时编码系统．但由于空时分组码受正交条件限制，传输效率得不到提高，而BLAST系统存在差错传播制约着误码率的下降．综合了这两种系统的优点，提出了一种非正交空时分组编码设计，并将其描述为空时分组BLAST系统、仿真结果表明，新系统在不同信道环境、不同调制方式和天线数目的情况下部具有良好性能，可以显著改善空时分组码和BLAST系统的性能。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.