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1.
The transport properties of Cs0.97Rb0.03H2PO4 have been studied using polycrystalline samples and single crystals. The mixed salt is isostructural with cesium dihydrogen phosphate and has slightly smaller unitcell parameters. The cation substitution increases the low-temperature ionic conductivity of the material by about two orders of magnitude but has an insignificant effect on the conductivity of the high-temperature phase. The low-temperature conductivity of single-crystal samples exhibits significant anisotropy, with σ a < σ b±c . The conductivity of the polycrystalline material is close to σ b±c . The substitution reduces the temperature of the superionic phase transition by 20°C and enhances the thermal stability of the high-temperature phase at low humidity (1 mol % H2O).  相似文献   

2.
Doped topological insulators (TI) Bi2?x Nd x Se3 single crystals were prepared by the self-flux method. The phase structure, magnetic properties, and electrical transport properties of the samples were studied. The X-ray diffraction (XRD) patterns of the sample indicate an incorporation of Nd into the Bi2Se3, and the crystal can be easily cleaved with silvery surface. The Bi2?x Nd x Se3 sample shows a giant magnetoresistance (MR) with different magnetic field. The positive magnetoresistance (MR) can reach 190 % at the field of 9 Tesla when the field is perpendicular to ab-plane of the crystal. In addition, at low magnetic fields, the MR exhibits a weak antilocalization (WAL) cusp.  相似文献   

3.
The temperature dependence of the optical transmission and small-angle light scattering with and without applied constant electric field was studied in relaxor single crystals of 0.91PbZn1/3Nb2/3O3-0.09PbTiO3 (PZN-PT 91/9) and 0.93PbZn1/3Nb2/3O3-0.07PbTiO3 (PZN-PT 93/7) solid solutions in the region of two phase transitions: (i) from cubic paraelectric to tetragonal ferroelectric phase at T=T c and (ii) from tetragonal ferroelectric to rhombohedral ferroelectric phase at T=T rt. In the absence of external electric field, only the phase transition at T c proceeds in both PZN-PT 91/9 and PZN-PT 93/7 crystals according to a percolation mechanism and is accompanied by the appearance of a sharp maximum in the small-angle light scattering intensity curve. In PZN-PT 93/7 crystals, the application of a relatively weak electric field induces an additional percolation type phase transition at T rt.  相似文献   

4.
We have performed partial HSO4 substitution in CsH2PO4 and studied the associated structural changes and the proton conductivity of the resultant (CsH2PO4)1 − x (CsHSO4) x solid solutions in the range x = 0.01–0.3. The results indicate that, at room temperature, the solid solutions are disordered. In the range x = 0.01–0.1, they are isostructural with the low-temperature phase of CsH2PO4 (sp. gr. P21/m), and their unit-cell parameters increase with x, whereas in the range x = 0.15–0.3 the solid solutions are isostructural with the high-temperature, cubic phase of CsH2PO4 (Pm3m), and their unit-cell parameter decreases. The conductivity of the (CsH2PO4)1 − x (CsHSO4) x solid solutions with x ≤ 0.3 depends significantly on their composition and increases at low temperatures by up to four orders of magnitude, approaching that of the superionic phase of CsH2PO4 in the range x = 0.15–0.3 because of the hydrogen bond weakening and increased proton mobility. The conductivity of the superionic phase decreases with increasing x by no more than a factor of 1.5–2, and the superionic phase transition, which occurs at 231°C in CsH2PO4, shifts to lower temperatures and disappears for x ≥ 0.15. The activation energy for low-temperature conduction decreases with increasing x: from 0.9 eV in CsH2PO4 to 0.48 eV at x = 0.1.  相似文献   

5.
Basing on electron spin resonance (ESR) data for Bi2Te3 doped by Mn ions we argue that this compound can be inhomogeneous and consists of two components with the different structures. Its main phase Bi 2?x Mn x Te 3 is intertwined with the microscopical inclusions of MnBi phase. The integral volume of these intermetal clusters is less than 1 % but nevertheless they exert the serious impact on the dynamic magnetic properties of the entire system. These inclusions are ferromagnetic with the Curie temperature of 630 K, while the main bulk phase Bi 2?x Mn x Te 3 has x= 0.05 orders at T c= 10 K (qualitatively this twophase picture is valid not only for this given x). Below this temperature two ferromagnetic phases coexist. Since the integral spontaneous polarization in MnBi phase is averaged out due to its random orientations in different clusters the time-reversal symmetry of Bi 2Te 3 doped by Mn ions is violated only at the low-temperature ferromagnetic transition.  相似文献   

6.
(1 − x) KNbO3 · xBiMg2/3Nb1/3O3 ceramic materials have been prepared by solid-state reactions. The materials with x < 0.3 have been shown to be perovskite solid solutions. Their average lattice parameter increases linearly with x. Like undoped KNbO3, the solid solutions undergo a low-temperature (rhombohedral → orthorhombic) ferroelectric phase transition. The transition temperature increases almost linearly with x. The dc electrical conductivity of the ceramics exhibits Arrhenius behavior. The activation energy for conduction rises sharply near the phase transition temperature.  相似文献   

7.
Lanthanum-doped lead zirconate titanate (PLZT) relaxor ceramics with (Pb0.91La0.09)(Zr0.65Ti0.35)O3 composition exhibits a repolarization-induced electroluminescence (EL) with a pronounced discrete character of emission. It is established that this behavior is related to the reorientation of nanodimensional polar regions in a strong pulsed electric field in the vicinity of a smeared phase transition. The temporal and temperature dependences of the EL intensity have been studied.  相似文献   

8.
The effects of Ba 2+ doping on the electrical and magnetic properties of charge-ordered Pr0.6Ca0.4MnO3 were investigated through electrical resistivity and AC susceptibility measurements. X-ray diffraction data analysis showed an increase in unit cell volume with increasing Ba 2+ content indicating the possibility of substituting Ba 2+ for the Ca-site. Electrical resistivity measurements showed insulating behavior and a resistivity anomaly at around 220 K. This anomaly is attributed to the existence of charge ordering transition temperature, \(T^{\mathrm {R}}_{\text {CO}}\) for the x = 0 sample. The Ba-substituted samples exhibited metallic to insulator transition (MI) behavior, with transition temperature, T MI, increasing from ~98 K (x = 0.1) to ~122 K (x = 0.3). AC susceptibility measurements showed ferromagnetic to paramagnetic (FM-PM) transition for Ba-substituted samples with FM-PM transition temperature, T c, increasing from ~121 K (x = 0.1) to ~170 K (x = 0.3), while for x = 0, an antiferromagnetic to paramagnetic transition behavior with transition temperature, T N, ~170 K was observed. In addition, inverse susceptibility versus T plot showed a deviation from the Curie–Weiss behavior above T c, indicating the existence of the Griffiths phase with deviation temperature, T G, increasing from 160 K (x = 0.1) to 206 K (x = 0.3). Magnetoresistance, MR, behavior indicates intrinsic MR mechanism for x = 0.1 which changed to extrinsic MR for x > 0.2 as a result of Ba substitution. The weakening of charge ordering and inducement of ferromagnetic metallic (FMM) state as well as increase in both T c and T MI are suggested to be related to the increase of tolerance factor, τ, and increase of e g ?electron bandwidth as average ionic radius at A-site, <r A> increased with Ba substitution. The substitution may have reduced MnO6 octahedral distortion and changed the Mn–O–Mn angle which, in turn, promotes itinerancy of charge carrier and enhanced double exchange mechanism. On the other hand, increase in A-site disorder, which is indicated by the increase in σ 2 is suggested to be responsible for the widening of the difference between T c and T MI.  相似文献   

9.
We have studied phase equilibria in the pseudoternary system Ag2Se-As2Se3-Bi2Se3 and constructed the 300-, 600-, and 800-K isothermal sections, a number of partial phase diagrams, and the liquidus projection of this system. The AgAsSe2-AgBiSe2 and As2Se3-AgBiSe2 joins are shown to be pseudobinary, and the Ag3AsSe3-AgBiSe2 and AgAs3Se5-AgAsSe2 joins are pseudobinary below the liquidus. Several in- and univariant peritectic, eutectic, and eutectoid equilibria and a broad region of AgBiSe2-based solid solutions are identified. The homogeneity region of the AgBiSe2-based phase has the largest extent along the AgAsSe2-AgBiSe2 join: 40 mol % (650 K) for the high-temperature form of AgBiSe2 and 20 mol % (300 K) for its low-temperature form.  相似文献   

10.
Phase equilibria in the pseudoternary system Ag2Se-AgAsSe2-AgBiSe2 have been studied using differential thermal analysis, X-ray diffraction, microhardness tests, and emf measurements on silver concentration cells with Ag4RbI5 as solid electrolyte. The results are used to construct the 300-, 600-, and 800-K isothermal sections, a number of partial phase diagrams, and the liquidus projection. Several in- and univariant peritectic and eutectic equilibria and a broad region of AgBiSe2-based solid solutions are identified. The homogeneity range of the high-temperature phase of AgBiSe2 reaches −50 mol % in width (650 K), and that of the low-temperature phase is 20 mol % in width (300 K) along the AgAsSe2-AgBiSe2 constituent binary. The melting points, lattice parameters, and microhardness of the solid solutions are determined.  相似文献   

11.
Epitaxial Sm0.35Pr0.15Sr0.5MnO3 thin films were deposited on LaAlO3 (LAO, (001)), SrTiO3 (STO, (001)), and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT, (001)) single-crystalline substrates by using pulsed laser deposition technique. In order to examine the strain effect on electronic and magnetic properties, films were studied by X-ray diffraction, electrical resistivity, and dc magnetization measurements. The film grown on LAO substrate is under compressive strain, and it undergoes ferromagnetic → paramagnetic transition at Curie temperature (T C) of ~ 165 K and metal → insulator transition at ~ 107 K. The films grown on STO and LSAT substrates are under tensile strain and have T C of ~ 120 and 130 K, respectively, and show metal → insulator transition at ~ 145 and 137 K, respectively. At T < T C, the zerofield and fieldcooled magnetization curves of all the films show a huge bifurcation. In the case of films on STO and LSAT substrates, hysteresis is also observed in fieldcooled cooling and warming magnetization vs. temperature measurement protocols at low magnetic field. All the signatures of the firstorder magnetic phase transition are absent in the case of film on LAO substrate. The occurrence and absence of firstorder magnetic phase transition in films on LAO, STO, and LSAT substrates, respectively, have been well explained through the substrateinduced film lattice strain.  相似文献   

12.
La0.45Dy0.05Ca0.5Mn0.9V0.1O3, prepared by solid-state route, was characterized using x-ray diffraction at room temperature. The Rietveld refinement shows that the sample crystallizes in orthorhombic structure with Pbnm space group. A secondary phase LaVO4 has been also detected. The temperature dependence of the magnetization was investigated to determine the characteristics of the magnetic transition. The sample exhibits a paramagnetic-ferromagnetic transition (PM-FM) at T C = 81 ± 0.7 K when temperature decreases. The study of the inverse of susceptibility reveals the presence of ferromagnetic clusters in the paramagnetic region. A metamagnetic transition was observed from the M(H) curves and the magnetic entropy change was calculated from magnetization curves at different temperatures in order to evaluate the magnetocaloric effect.  相似文献   

13.
Lead-free (Na0.5Bi0.5)0.88Ba0.12TiO3 ceramics have been prepared and studied by X-ray diffraction and by the complex dielectric response as a function of temperature, frequency and a.c. field intensity. Relaxor-like dielectric behaviour were induced by barium Ba dopping to Na0.5Bi0.5TiO3. It was shown, that relaxor-like characteristics can be enhanced by the increase of the a.c. field intensity. A sharp increase in the electric permittivity and dielectric loss on heating near 230 °C has been observed. This sharp increase in dielectric responses indicates a transformation between classical and relaxor ferroelectric phases. The X-ray diffraction study shows that this transformation corresponds to the first order phase transition from tetragonal to cubic. The use of (Na0.5Bi0.5)0.88Ba0.12TiO3 ceramics for device applications has been indicated.  相似文献   

14.
We have studied the properties of nanocrystalline ZrO2〈3 mol % Y2O3〉 and 90 wt % ZrO2〈3 mol % Y2O3〉-10 wt % Al2O3 powders prepared via hydrothermal treatment of coprecipitated hydroxides at 210°C. The results demonstrate that Al2O3 doping raises the phase transition temperatures of the metastable low-temperature ZrO2 polymorphs and that the structural transformations of the ZrO2 and Al2O3 in the doped material inhibit each other.  相似文献   

15.
WO3-doped zinc titanate ceramics were prepared by conventional mixed-oxide method combined with a chemical processing. The effects of WO3 addition on the low-temperature sintering behavior, phase transition and dielectric properties of zinc titanate ceramics were investigated. The results show that the densification temperature of ZnTiO3 ceramics can be reduced from 1150 to 900 °C with WO3 addition and chemical processing. Small amount of WO3 (<1.00wt %) accelerated the decomposition of hexagonal ZnTiO3 phase to cubic Zn2TiO4 phase, while excessive addition (for example, 3.00wt %) restrained the decomposition. At the same time, the phase transition temperature from hexagonal ZnTiO3 phase to cubic Zn2TiO4 is lowered by adding WO3. WO3 addition affects the dielectric properties of ceramics. The dielectric properties of WO3-doped zinc titanate ceramics were measured at different frequencies. The results showed the decreasing tendency with the increasing measuring frequencies for both the dielectric constants and the loss tangents, and there existed the best dielectric properties for 1.0% WO3-doped ceramics.  相似文献   

16.
The isobaric heat capacity of p-Sm2Zr2O7 (pyrochlore phase) has been determined in the temperature range 10–1400 K using adiabatic, differential scanning, and relaxation calorimetry, and its enthalpy increment, entropy, and reduced Gibbs energy have been calculated with allowance for the contributions of its low-temperature magnetic transformations.  相似文献   

17.
Structural changes in Sr9In(PO4)7 during the antiferroelectric (AFE) phase transition are studied by X-ray powder diffraction, electron microscopy, second-harmonic-generation, and dielectric measurements. Sr9In(PO4)7 complements a group of Ca3(VO4)2-type ferroelectric (FE) phosphates and vanadates and is the first example of an AFE material in this family. Antiparallel shifts of Sr atoms from their average positions and ordering of the P1O4 tetrahedra form two contributions in the structural mechanism of the AFE phase transition: a displacive contribution and an order-disorder constituent, respectively. The displacive and order-disorder type of structural changes may account for the obtained value of the Curie–Weiss constant (C ~ 104 K) which is in between the value usually observed for pure displacive (C ~ 105 K) and that for orderdisorder phase transitions (C ~ 103 K). The structural mechanism of the AFE phase transition in Sr9In(PO4)7 is very similar to that of the FE phase transition in Ca9R(PO4)7 and Ca9R(VO4)7. Both displacive and orderdisorder contributions are responsible for the physical properties of the Ca3(VO4)2-type materials.  相似文献   

18.
Structural, magnetic, magnetocaloric, and electrical properties are reported for mixed-valence manganite La0.67Pb0.13Na0.2MnO3. X-ray diffraction reveals that the sample crystallizes in the rhombohedric structure with the R-3c space group. The magnetic properties of the polycrystalline La0.67Pb0.13Na0.2MnO3 compound are discussed in detail, based on the susceptibility, magnetization, and isotherm. The sample presents a ferromagnetic property with T C= 275 K and a Griffiths phase at T G= 325 K which gives the existence of ferromagnetic clusters in the paramagnetic domain. A large deviation is usually observed between field cooled (FC) and zero field cooled (ZFC). M(T) is a low temperature below the blocking temperature. At 40 K, a spin-glass or a cluster-glass state is seen to arise from a ferromagnetic state. This is caused by the competition between the antiferromagnetic and ferromagnetic interactions. The electrical properties show the presence of a metal–semiconductor transition at T M?Sc. To understand the dependence of disorder with the transport mechanism, we used the phenomenological equation for resistivity under a percolation approach, which is dependent on the phase segregation of a paramagnetic semiconductor and ferromagnetic metallic regions.  相似文献   

19.
The phase transition sequence of SrBi2Ta2O9 (SBT) and the local microscopic dynamics near the ferroelectric transition are investigated using a shell model with parameters fitted to first-principle calculations. We show that the complex interplay between polar and nonpolar instabilities leads to the presence of two phase transitions. In this way the existence of an intermediate orthorhombic paraelectric phase, characterized by the rotation of the TaO6 octahedra, is demonstrated without using any explicit experimental data as input. The local polarization dynamics does not provide any indication of a relaxation process near the ferroelectric transition. Finally, dielectric and piezoelectric coefficients along crystallographic directions are investigated.  相似文献   

20.
The reentrant magnetic phase transition in Pr 0.5Sr0.41Ca0.09MnO3 perovskite is explained using the Ising spin model on the square lattice with mixed ferromagnetic and antiferromagnetic exchange interactions. It is shown using numerical calculations that this effect is strongly affected by the external magnetic field and lattice disorder.  相似文献   

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