透明导电氧化物AZO薄膜的制备与性能研究

利用直流磁控溅射法,采用氧化锌铝(98%ZnO+2%Al2O3)为靶材,在普通载玻片上制备了AZO(Z n O:Al)薄膜。采用X射线衍射仪、场扫描电镜对薄膜的结构及表面形貌进行了分析,采用分光光度计和四探针法对薄膜的光电学性能进行了测试。结果表明:控制好工艺参数可以制备出致密、均匀并具有良好的光电性能的AZO薄膜;并计算了带隙能量和折射率。     

直流反应磁控溅射法制备WO_3薄膜及其氢敏特性研究

采用直流反应磁控溅射法,在未抛光的A l2O3基片上制备WO3薄膜,在干燥空气中经过热处理;利用SEM观察薄膜表面形貌;通过XRD测量,对薄膜的晶体结构进行分析;薄膜氢敏特性测试采用静态配气法。经过400℃热处理,当工作温度在270℃时,对体积分数为3×10-4氢气的灵敏度达到了77,稳定性较高,选择性好,响应时间很快,在15 s以内,是一种较理想的氢敏材料。     

高温压力传感器的力敏电阻条的制备

本文探讨了一种金属薄膜高温压力传感器的力敏电阻条的制作方法,采用氮化铝作铜村底和金属力敏电阻条之间的电绝缘层,利用铜金属在高温条件下也能够表现出压阻特性,制作力敏电阻条。通过直流磁控溅射制作力敏电阻条,并引线,封装,进行测试,最后反应出随压力的变化电阻的变化关系。     

基于PEM的反应磁控溅射镀膜机参数监控系统

实时在线监测磁控溅射反应气体的参数可有效保证镀膜质量;针对反应磁控溅射离子镀膜机反应气体的功能需求,分析了反应气体的控制原理,基于PEM方法提出了控制器方案和反应气体的参数监控方案,分析了监控系统的功能需求,自定义了串口通信协议,基于LabVIEW和串口设计了反应气体的参数监控系统系统,并与设计的控制器用于镀膜工艺试验;试验结果表明,基于PEM方法设计的反应气体参数监控系统功能正确,可为控制器和镀膜机提供参数调控依据,为提高硬质镀膜质量提供了一套有效的监控方法。     

退火处理对Ti-WO_3薄膜的结构和气敏特性的影响

用X射线衍射和透射电镜表征了直流磁控溅射法制得的Ti-WO3薄膜的晶型、晶格常数、粒径等。研究了退火对Ti-WO3薄膜气敏性质和微结构的影响,找出了最佳退火温度和工作温度;并对机理进行了分析。结果表明:450℃退火的薄膜的气敏效应很好,最佳工作温度在150℃左右;     

直流反应磁控溅射WO3薄膜气敏特性研究

用直流反应磁控溅射法制成纳米结构的WO3薄膜气敏传感器,通过XRD,SEM和XPS对该薄膜的晶体结构和化学成分进行分析,研究了不同基片上制备的WO3薄膜的氨敏特性与薄膜厚度、退火温度的关系.实验得到的薄膜粒径大小约30-50 nm,结果表明:在未抛光的三氧化二铝基片上沉积厚度为40 nm的WO3薄膜,经过400℃退火,在体积分数为5×10-5 NH3中的灵敏度达到300,而且气体选择性好,响应-恢复时间短,可以作为理想的氨敏元件.     

掺Pt的SnO2薄膜气敏特性研究

用直流磁控溅射法分别在si（111）基片及陶瓷基片上制备掺有Pt的Sn02薄膜,并进行500℃～700℃退火处理,对掺杂前后的薄膜进行XRD分析,测试各掺杂样品气敏特性。500℃退火后,掺杂样品对各种有机气体有较高的灵敏度,随着溅射时间的延长,气敏特性提高。700℃退火后,45min溅射的样品对氨气有很高的灵敏度和很好的选择性,最佳工作温度为220℃左右。随着掺杂时间延长,气敏特性降低。     

磁光记录材料温度特性研究

分析了磁光记录的温度特点，提出了实现磁光记录介质的宽温化技术的措施.并用射频磁控溅射技术制备出使用温度在－30℃～＋80℃的宽温非晶磁性记录介质。     

磁控溅射功率对掺Al氧化锌薄膜特性的影响

利用射频磁控溅射技术在石英玻璃衬底上制备掺Al氧化锌(AZO)薄膜,研究了不同溅射功率(75,120,160,200W)对AZO薄膜的结构、光学和电学特性的影响.结果表明:所制备的AZO薄膜具有良好的c轴择优取向,且随着溅射功率的增加,薄膜的表面颗粒尺寸逐渐增加;薄膜在可见光范围具有较高的透射率,吸收边在350～400...     

劳斯莱斯4S店贴膜焕新颜

作为世界上第一家采用磁控溅射技术商业化生产窗膜的公司,圣戈班舒热佳特殊镀膜有限公司,同时也是国际公认的汽车膜、建筑膜、太阳能背板和工业镀膜行业的领导者,全球磁控溅射膜的最大生产商。凭借着产品优越的性能与节能环保的理念,舒热佳建筑隔热防爆膜备受追捧。不久前刚在贵阳试营业的某劳斯莱斯展厅就是舒热佳建筑隔热防爆膜的收益者之一。     

The electrical and optical properties of AZO thin film under different post-annealing temperatures

In this study, the Aluminum element doped zinc oxide (Al:ZnO) thin film was deposited on the Corning glass substrate by RF magnetron sputtering technology and annealing treatment. After sputtering, all thin films are then annealed on nitrogen atmosphere and temperature of 300, 500 and 550 °C, respectively. The structural, electric and optical characteristics were then investigated. All films illustrate strong (002) for ZnO and (335) for Al preferential orientation by using XRD analysis. The lower resistivity can be observed at nitrogen annealing and temperature of 400 °C. The transmittance property of AZO thin film exhibited an excellent transparency in the visible light range. The transmittance reached to nearly 81.4 % for all Al:ZnO film. It can be clearly observed that the grain size of AZO thin film is very uniform by utilizing SEM technology.     

Room‐temperature deposition of thin‐film indium tin oxide on micro‐fabricated color filters and its application to flat‐panel displays

Abstract— Direct deposition of indium tin oxide (ITO) thin film on color filters is of practical use in the fabrication of state‐of‐the‐art flat‐panel displays. Room‐temperature dc magnetron sputtering of thin‐film ITO and issues related to the integration of ITO‐on‐glass panels containing micro‐fabricated color filters and other functional materials have been investigated. The resulting polycrystalline ITO exhibited good adhesion to the underlying color filters, as well as good optical transparency and high electrical conductivity. Application of this ITO deposition technology to color liquid‐crystal and organic light‐emitting diode displays will also presented.     

基于电子印刷工艺的薄膜热电偶研制

薄膜热电偶由于具有体积小、热容量小及响应速度快等优点成为近年来学者们研究的重点。薄膜制备常用的方法有射频溅射法、离子镀膜法以及直流脉冲磁控溅射法等,但这些方法操作设备复杂,制作时间长,效率低,成功率低且复现性差。用电子印刷工艺制备薄膜热电偶,将Au,Pt的溶液化微纳米材料印制在基板上,印刷成为Au-Pt薄膜热电偶,该方法操作方便快捷,对电极材料污染小。通过试验证明:采用电子印刷工艺制备的Au-Pt薄膜热电偶符合Au-Pt热电偶检定规程的要求,热电偶精度高,重复性和一致性好。     

射频磁控溅射法在玻璃基片上沉积CeO2 薄膜的研究

二氧化铈具有高折射率、介电常数和紫外吸收率,因此它广泛地应用于各种光学和电子器件.本文采用射频磁控溅射法在玻璃基片上沉积CeO2薄膜.溅射过程中,首先制备纯二氧化铈靶材,然后在不同的功率上调节不同的基片温度进行溅射.采用光电子能谱、X射线衍射、拉曼光谱和扫描电镜等测试方法表征薄膜的特性.     

浅谈光盘丝网印刷制版技术

光盘丝网印刷是整个光盘生产过程中的一个重要环节,而好的印刷质量与高质量的网版是密切相关的。本文从绷网张力、网框选用、制网过程各环节控制等探讨了高质量网版制作的要点。     

Video and optical recording

Technology has created new ways to store and distribute information. The optical disc is one of these emerging technologies. As a computer storage medium, the optical disc has greater capacity to store data than any present magnetic medium. Optical disc technology includes read-only optical videodisc for storing visual data, and read-write optical digital disc for storing digital data.     

纳米WO_3薄膜的光学性质及氢敏特性研究

采用磁控直流溅射法制备出纳米WO3薄膜,在N2气中进行退火处理。采用分光光度计、XRD等对退火前后的WO3薄膜进行了光学特性的分析。研究表明:在623 K进行退火处理的薄膜均匀、致密,呈现出较好的结晶态。采用光源激发对纯WO3薄膜在不同温度条件下的氢敏特性进行了研究,实验显示:WO3薄膜对H2的敏感性与温度有关,在348 K温度条件下,WO3薄膜的氢敏效应最好。     

多晶硅薄膜制备方法与压阻特性的研究

对磁控溅射和低压化学气相淀积(LPCVD)2种方法制备的多晶硅薄膜的电学和压阻特性进行了研究,并讨论了结晶化工艺对磁控溅射薄膜性质的影响。实验表明:LPCVD薄膜稳定性、重复性较好,应变系数可达到20以上;磁控溅射薄膜经适当结晶化工艺处理具有纳晶硅的结构特征,应变系数可达到80以上。利用扫描电镜(SEM)图片结合电阻率和应变系数的测试结果,讨论了2种方法制备出的多晶硅薄膜应用于压阻式力学量传感器的可行性。     

Fabrication of nanoscale tungsten tip arrays for scanning probemicroscopy-based devices

A new fabrication process for nanoscale tungsten tip arrays was developed for scanning probe microscopy-based devices. It is suitable to make a huge array on a device chip and is potentially compatible with CMOS technology. In this study, tungsten was selected as a tip material because of its hardness and conductivity. The newly developed fabrication process mainly consists of several important techniques: a combination of optical lithography and electron beam (EB) lithography to reduce the total exposure time with high resolution and chromium/tungsten/chromium (Cr/W/Cr) sandwich deposition and etching in which the first chromium layer is used as a mask and a second one is used as an etch stop. A periodic array of dots in an EB resist with a spot diameter of less than 50 nm was obtained by a combination of optical lithography and EB lithography with a positive resist (polymethylmethacrylate) in which all processing conditions were optimized carefully. A thin and uniform chromium film, deposited by ion-beam sputtering, allowed the use of thin polymethylmethacrylate (PMMA) film which led to the high resolution. The conditions of dc magnetron sputtering were also optimized in order to deposit a densely packed and low-resistivity film. The resulting tungsten tip arrays had a cylindrical shape with diameters of less than 60 nm and heights of 300 nm