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1.
研究了Ti的加入对Sn0.7Cu无铅钎料润湿性能以及钎料/Cu界面微观组织的影响.结果表明:在Sn0.7Cu中添加微量Ti,提高了钎料的润湿性能,可使铺展面积提高5%左右,当钎焊时间为3s时,界面金属间化合物(IMC)形貌由原来的扇贝状变为锯齿状;随着钎焊时间延长,Sn0.7Cu/Cu和Sn0.7Cu0.008Ti/C...  相似文献   

2.
研究了采用Zn-3Al钎料钎焊Al/Cu异质金属时,钎焊温度对接头冶金反应行为及性能的影响。结果表明,在400℃超声钎焊时,接头的钎缝层由不均匀分布的α-Al和CuZn5树枝状晶以及Zn-Al共晶基体组成,接头的Cu界面处形成了较厚的扇贝状CuZn5金属间化合物层和Cu基扩散层。增加钎焊温度到440℃时,接头的钎缝层转变为由均匀弥散分布的CuZn5、α-Al和Al4.2Cu3.2Zn0.7相组成,接头Cu界面处的金属间化合物层则由CuZn5相转变为锯齿状的Al4.2Cu3.2Zn0.7相。进一步增加钎焊温度至480℃引起了接头显微组织的粗化和钎缝层中缩孔的形成。性能测试表明,与在400℃和480℃超声钎焊相比,在440℃超声钎焊获得的Cu/Al接头有着最佳的拉伸强度值(78.9 MPa)和抗腐蚀性  相似文献   

3.
采用热弹塑性有限元方法,在考虑了材料性能参数随温度变化情况下,分析了采用Ag—Cu—Ti钎料钎焊A12O3陶瓷与Ni金属丝的钎焊接头,在钎焊和随后再次加热过程中产生的应力大小和分布情况,计算中着重考虑了钎料对接头残余应力的影响。分析结果表明,在钎料与陶瓷的界面处存在着较大的残余拉应力,影响了钎焊接头的连接强度,并可能在界面的陶瓷侧产生裂纹。通过试验对比,认为在此类连接结构中,钎料是造成接头形成较大残余应力的主要因素。同时。选择合适厚度的钎料会降低钎焊接头的残余应力,改善接头连接强度。  相似文献   

4.
铝软钎焊时钎料元素的化学选择吸附作用   总被引:2,自引:0,他引:2  
铝软钎焊的关键问题是钎焊接头耐蚀性差。本文以普通 Pb—Sn 软钎料为基体,加入能与 Al 形成界面化合物的合金元素改变钎焊接头界面电极电位和改善钎料与母材间的结合,从而提高铝软钎钎焊接头的耐蚀性。试验研究表明:加入合金元素 Ag的 Pb—Sn 钎料钎焊 Al 时,Ag 向 Al 表面的化学选择吸附作用明显,由于形成 Ag—Al 化合物使耐蚀性显著提高。本文还提出不同工艺因素对铝软钎焊接头耐蚀性影响的试验结果。  相似文献   

5.
对In40Pb60的铟基近共晶钎料钎焊金属基板钎焊界面(即Cu/Ni/Au/InPb/Ag/Ni/Al结构)进行研究。分析钎焊界面焊点处显微结构及各层成分及厚度,对钎焊焊点进行高温老化,利用SEM对焊点钎料成分与界面形成的金属间化合物进行检测,并进行剪切力学性能测试。结果表明,短时间的老化后焊点AuIn_2和AgIn_2金属间化合物的生成使得焊点力学性能有一定提高,但IMC层不宜过厚,厚度过大焊点的剪切性能会随老化的推进略有下降,应该控制脆性物质的生成使得焊点力学性能达到最高。  相似文献   

6.
本文研究了Cu—Sn—Ti,Cu—In—Ti,Cu—Cr,Cu—Ge—Ti铜基活性钎料钎焊Si_3N_4陶瓷与钢。结果表明,四种铜基无银钎料均可实现Si_3N_4陶瓷与钢的连接,Cu—Sn—Ti,Cu—In—Ti的钎焊接头的剪切强度较高,它们合适的钎焊工艺参数分别为1373K×600s,1323K×600s。钎焊接头的X射线衍射分析,波谱分析表明活性钎料连接陶瓷与金属的机制是钎料中活性元素(Ti、Cu)向陶瓷界面扩散并与之发生化学反应而实现接合。  相似文献   

7.
军用高可靠电子器件的组装工艺复杂性要求开发适用于低温钎焊的钎料.对InSnPb和InSnPbAu钎料在Cu/Ni/Au体系钎焊界面进行研究.利用DSC、SEM对钎料热性能和焊点界面显微组织进行检测,并进行剪切强度测试.结果表明,焊点金属间化合物为AuIn2.两种钎料剪切强度均满足军用标准,InSnPb略高于InSnPb...  相似文献   

8.
镀锌板激光钎焊钎缝成形和接头质量研究   总被引:1,自引:0,他引:1  
本文以CuSi3为钎料,电镀锌钢板为母材,CO2激光为热源,对卷对接接头进行了激光填丝钎焊研究。试验过程中,通过改变钎焊工艺参数及激光入射方式,研究了镀锌钢板激光填丝钎焊在不同热输入下的钎缝外观成形规律。结果表明,激光功率和光斑直径是影响钎缝成形最重要的因素;倾斜入射激光可以改善钎缝成形质量。此外,对不同热输入和同一接头不同部位的界面结合情况和界面元素的分布进行了SEM观察和电子探针分析。结果表明,随着钎焊线能量的增加,Si、Mn元素容易在界面处出现偏聚;相对于接头上部,接头下部钎料与母材结合微弱,界面更容易出现Si、Mn、Zn元素的富集。  相似文献   

9.
《印制电路信息》2005,(8):71-72
新型Al-Si-Cu-Ge系钎料研究该文研究了用于铝合金钎焊的新型Al-Si-Cu-Ge系钎料,通过快冷工艺制备出厚度为90微米到150微米的钎料薄带。对钎料熔化温度区间及金相组织进行了分析和判定,结果表明:与Al-9.6Si-20Cu相比,铅料熔化温度大幅度降低,普通铅料和快冷铅料的固相线相差30度,液相线相差约5度左右,普通铅料的微观组织主要由Al-Si-Cu-Ge、Al-Si-Ge和Al-Cu共晶相、Si-Ge先析出相及θ(Al2Cu)相组成,快冷铅料晶粒尺寸范围约1 ̄5微米。(张福礼等,电子工艺技术,2005/3,共4页)印制电路板的抗干扰设计以印制电路板的电磁兼容性为核心,分…  相似文献   

10.
Ni基钎料激光钎焊金刚石磨粒界面显微结构及形成机理   总被引:1,自引:0,他引:1  
采用Ni基合金钎料,在Ar气保护条件下,对金刚石磨粒进行了激光钎焊试验研究.采用扫描电镜(SEM)和能谱仪(EDS)及X射线衍射仪(XRD)分析金刚石磨粒与Ni基钎料结合界面的组织结构与物相组成,并探讨了钎料与金刚石界面处碳化物的形成机理.测试结果表明,激光钎焊过程中在金刚石表面附近形成的富cr层与金刚石表面的C元素反应生成碳化物Cr3C2,通过反应热力学与动力学分析显示界面反应产物可以依靠置换反应形成,使金刚石磨粒与钎料实现了牢固结合.  相似文献   

11.
通过改良座滴法研究了Ag-Cu-Ti/ZrO2陶瓷体系的润湿行为和界面特征[1]。采用ADSA(axisymmetric drop shape analysis)-SESDROPD分析软件,X射线衍射仪(XRD),场发射扫描电镜(FESEM)以及配有能谱仪(EDS)的扫描电镜(SEM)测量表征了温度变化下,不同Ti含量的Ag-Cu-Ti合金在ZrO2陶瓷基板上的润湿性及其界面微观结构的影响规律。结果表明:Ag-Cu-Ti/ZrO2陶瓷体系的润湿机制为反应性润湿。Ag-Cu-Ti合金在ZrO2陶瓷基板上的润湿性随Ti含量的增加逐渐改善。Ag54Cu43Ti4合金熔体在ZrO2陶瓷基板上的润湿性对温度具有明显的反常依赖性,Ag53Cu41Ti6合金的润湿性较好。随温度的升高,Ag54Cu43Ti4/ZrO2和Ag53Cu41Ti6/ZrO2界面反应产物TiO反应层逐渐增厚,Cu3Ti3O反应层有逐渐变薄的趋势。Ag50Cu40Ti10/ZrO2的界面,出现大块状的金属间化合物Cu3Ti3O,容易使合金和陶瓷界面发生剥离。  相似文献   

12.
The microstructure of the ultrasmall eutectic Bi-Sn solder bumps on Au/Cu/Ti and Au/Ni/Ti under-bump metallizations (UBMs) was investigated as a function of cooling rate. The ultrasmall eutectic Bi-Sn solder bump, about 50 μm in diameter, was fabricated by using the lift-off method and reflowed at various cooling rates using the rapid thermal annealing system. The microstructure of the solder bump was observed using a backscattered electron (BSE) image and the intermetallic compound was identified using energy dispersive spectroscopy (EDS) and an x-ray diffractometer (XRD). The Bi facet was found at the surface of the ultrasmall Bi-Sn solder bumps on the Au/Cu/Ti UBM in almost all specimens, and the interior microstructure of the bumps was changed with the solidification rate. The faceted and polygonal intermetallic compound was found in the case of the Bi-Sn solder bump on the Au (0.1 μm)/Ni/Ti UBM, and it was confirmed to be the (Au1−x−yBixNiy)Sn2 phase by XRD. The intermetallic compounds grown form the Au (0.1 μm)/Ni/Ti UBM interface, and they interrupted the growth of Bi and Sn phases throughout the solder bump. The ultrasmall eutectic Bi-Sn solder bumps on the Au (0.025 μm)/Ni/Ti UBM showed similar microstructures to those on the Au/Cu/Ti UBM.  相似文献   

13.
The effect of a reflow process and under bump metallurgy (UBM) systems on the growth of intermetallic compounds (IMC) of the 57Bi/43Sn and 37Pb/63Sn solder bump/UBM interfaces was investigated. The selected UBM systems were sputtered Al/Ti/Cu, sputtered Al/NiV/Cu, Al/electroless Ni/immersion Au, and Al/Ti/electroless Cu. An alloy electroplating method was used for the solder bumping process. The microstructure and composition of intermetallic compound (IMC) phases and their morphologies were examined using scanning electron microscopy and X-ray diffraction. The Cu6Sn5 η'-phase IMC appeared on all Cu containing UBM cases with Pb/Sn and Bi/Sn solders and the Cu 3Sn ϵ-phase was detected only with Pb/Sn solder bumps. The Ni3Sn4 IMC was found to be the main IMC phase between Ni and solder. The Ni3Sn secondary IMC was also detected on the electroless Ni UBM with PbSn solder after ten times reflow. Through the bump shear test, Al/NiV/Cu, Al/elNi/Au, and Al/Ti/elCu UBMs showed good stability with Bi/Sn and Pb/Sn solder in terms of metallurgical aspects  相似文献   

14.
为了提高不锈钢桨叶的表面耐磨蚀性能,采用激光合金化技术在1Cr18Ni9Ti不锈钢表面制备了Mn-Al2O3和Mn-Al2O3-NiWC合金化层,原位获得均由枝晶、共晶和未熔氧化铝颗粒组成的高锰钢基复合耐磨蚀涂层,并通过正交试验研究了两种合金化层的显微组织和耐磨蚀性能。结果表明,所有的正交参量下激光合金化Mn-Al2O3均可提高不锈钢的耐磨性,但耐蚀性有的提高,有的降低;参量因素对合金化层耐磨性的影响顺序为Al2O3添加量、扫描速率、激光功率,对耐蚀性的影响次序则恰恰相反;Al2O3添加量决定了Mn-Al2O3复合涂层中硬质相的含量,从而决定了涂层硬度和耐磨性;两种合金化层表面均发生晶界腐蚀、晶粒内和晶界处的点蚀,其耐蚀性与其多种组织、物相及各自的化学成分和耐蚀性及组织均匀性相关。  相似文献   

15.
黄亮  陈卫民  安兵  吴懿平 《电子工艺技术》2010,31(3):125-127,131
使用单辊法制备Au20Sn箔材,通过XRD衍射仪测试其晶态结构和相组成;采用差热分析法(DTA)测试其熔化温度;应用环境扫描显微镜(ESEM)观察其常温下微观组织。对比了单辊法制备的金锡焊料和叠层法制备的金锡焊料焊接光纤接头和大功率LED固晶接头的显微结构。结果表明:单辊法工艺可以制备Au20Sn箔材,其物理性能和显微组织都与理论的Au20Sn焊料一致;单辊法制备的金锡焊料的焊接性能比叠层法制备的焊料好。  相似文献   

16.
添加适量稀土元素钇后,镁铝合金高温力学性能会得以改善。本文利用光学显微镜(OM)、X射线衍射仪(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM),对693 K保温24 h的Mg-9.0wt.%Al-2.2 wt.%Zn-6.1wt.%Y铸态合金样品的微结构进行了研究。实验结果表明,显微组织相组成是基体α-Mg、晶界处γ-Mg17Al12、晶胞内的Al2Y、τ-Mg32(Al,Zn)49及-Al5Mg11Zn4相。确定了-Al5Mg11Zn4相与α-Mg基体间的取向关系是(10 10)α//(106),[51053]α//[010]。  相似文献   

17.
本文采用简易湿化学法制备二氧化锡/多壁碳纳米管复合材料(SnO2/MWNTs)。利用X射线衍射仪(XRD)和透射电子显微镜(TEM)技术对其形貌、成分及微观结构进行表征,并对复合材料进行锂离子电池性能的测试。结果表明,SnO2纳米颗粒均匀地负载在多壁碳纳米管的管壁,复合材料表现出良好的循环稳定性和较高的比容量。  相似文献   

18.
Flip chip solder bumps were produced on Cu contact applying Sn-9Zn-xAl Pb-free solder by dipping method. The solder bumps were tested under 85 C/85% RH (relative humidity) or at 150 C for 1000 hours to explore the shear strength and the interfacial interaction behavior. Experimental results revealed that Al and Zn, while not Sn, diffuse to the Cu/solder interface during the extended period test. A thin layer of Al4.2Cu3.2Zn0.7 compound, characterized by XRD, was formed at the interface of the as-produced solder bump. This compound which resulted from the gathering of Al at the interface, provides a barrier to Sn diffusion toward Cu substrate and, thus, no Cu-Sn compound was detected. This is the first time to find a Sn-containing solder which, in contact with Cu, does not form Cu-Sn intermetallic compound during heat treatment and, thus, the Sn-Zn-Al solder is termed an inherent barrier solder.  相似文献   

19.
We demonstrate nanostructural evolution resulting in highly increased photoluminescence in silicates doped with Er3+ ions. High-resolution transmission electron microscopy (HRTEM) imaging, nano-energy dispersed X-ray (NEDX) spectroscopy, X-ray diffraction (XRD) and photoluminescence analysis confirm the local composition and structure changes of the Er3+ ions upon thermal annealing. We studied two types of amorphous nanopowder: the first is of the composition SiO2/18Al2O3/2Er2O3 (SAE), synthesized by combustion flame-chemical vapor condensation, and the second is with a composition of SiO2/8Y2O3/2Er2O3 (SYE), synthesized by sol-gel synthesis (composition in mol%). Electron diffraction and HRTEM imaging clearly show the formation of nanocrystallites with an average diameter of approximately 8 nm in SAE samples annealed at 1000 degrees C and SYE samples annealed at 1200 degrees C. The volume fraction of the nanocrystalline phase increased with each heat treatment, eventually leading to complete devitrification at 1400 degrees C. Further XRD and NEDX analysis indicates that the nanocrystalline phase has the pyrochlore structure with the formula Er(x)Al(2-x)Si2O7 or Er(x)Y(2-x)Si2O7 and a surrounding silica matrix.  相似文献   

20.
以硝酸锆(Zr(NO3)4·5H2O),乙酸铅(Pb(CH3COO)2·3H2O),钛酸四丁酯(Ti(OC4H9)4)和聚乙烯吡咯烷酮(PVP)为原料,采用sol-gel和静电纺丝法,结合烧结工艺首次制备了在准同型相界附近的类单晶PZT纳米纤维.利用热重分析、X射线衍射仪、扫描电镜和透射电镜等表征方法,对类单晶PZT纤维的热分解过程、晶体结构、微观相貌和形成机理等进行了分析和解释.研究结果表明:经过400℃预退火0.5h以及750℃烧结2h后,可形成具有类单晶结构的PZT纳米纤维,纤维直径约在80 ~ 100 nm左右,晶体结构为典型的钙钛矿相.形成这种类单晶结构的主要机理是在预退火期,有机物充分分解形成无规则非晶网络,随着烧结温度的升高,取向基本一致的小晶粒经历了形核、长大、吞噬,最终形成类单晶纳米纤维.在准同型相界附近的类单晶PZT纳米纤维在纳米压电器件和微机电系统领域具有广泛的应用前景.  相似文献   

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