CIGS将进入快速增长期

a-Si、CdTe和CIGS是目前薄膜呔阳能电池主流技术,而大部分CIGS（铜铟镓硒）电池都采用真空蒸镀方式生产——称为共蒸镀（co-evaporation）,将主要材料铜铟镓与硒加热在真空中沉积于基板,这种工艺要实现大面积且均匀的铜铟镓硒膜具有相当的挑战性。     

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我国铜铟镓硒薄膜太阳能电池研制取得突破天津滨海新区的国家863铜铟镓硒薄膜太阳能电池中试基地中试工艺设备与大面积材料和器件开发取得了进展,成功研制出有效面积为804 cm~2的玻璃衬底铜铟镓硒薄膜太阳能电池组件,其光电转换     

CdS纳米薄膜的水浴法制备与表征

CdS是一种直接能隙半导体，其带隙约为2．42eV，是一种良好的太阳能电池窗口层材料和过渡层材料。化学水浴法沉积CdS薄膜具有工艺简单，成本低廉，成膜均匀、致密以及可大面积生产等优点。本文通过对化学水浴法沉积CdS薄膜的研究，阐述了CdS膜的生成和生长过程及其机理，并不断优化此方法中的各种工艺参数，得到了适合做铜铟镓硒薄膜太阳能电池过渡层的CdS薄膜，并对该薄膜的形貌、结构和性能进行了分析。     

我国研制的804cm~2铜铟镓硒太阳能电池组件光电转换率达到7%

南开大学信息技术科学学院作为国家863铜铟硒太阳能薄膜电池中试基地,日前成功研制出有效面积为804cm~2的玻璃衬底铜铟镓硒太阳能电池组件,经电子18所质量检验中心标准测试,其光电转换率达到7%。这一成果表明,我国已基本掌握了制造铜铟镓硒薄膜太阳能电池设备、工     

基于激光诱导击穿光谱技术的铜铟镓硒薄膜中元素含量比的快速定量分析方法

采用单靶磁控溅射方法在不同溅射时间下制备了铜铟镓硒薄膜,并且利用激光诱导击穿光谱技术实现对铜铟镓硒薄膜中元素含量比的快速定量分析。结果表明:随着溅射时间延长,Ga与(In+Ga)的谱线强度比值以及薄膜的禁带宽度同步变化,均呈先减小后增大的规律;铜铟镓硒薄膜的激光诱导击穿光谱图以及谱线分析、几种元素辐射强度比值的快速定量分析都表明,激光诱导击穿光谱技术能够间接地实现对铜铟镓硒薄膜中元素含量比的快速检测,能够在铜铟镓硒薄膜的性能分析以及制备参数优化方面发挥辅助作用。     

基于激光诱导击穿光谱技术的铜铟镓硒纳米薄膜的分析探测研究

铜铟镓硒薄膜中4种元素的含量比对薄膜的性能有非常大的影响。采用磁控溅射方法在不同工作气压下制备了铜铟镓硒薄膜,利用激光诱导击穿光谱(LIBS)技术实现了铜铟镓硒薄膜中Ga含量与(In+Ga)含量之比以及Cu含量与(In+Ga)含量之比的定量分析。分析了不同工作气压下制备的铜铟镓硒薄膜中元素谱线的强度,结果表明:IGa/I(In+Ga)与薄膜的禁带宽度是对应的,均随工作气压的增加而先增大后减小,当工作气压为2.0Pa时,获得了最大的薄膜禁带宽度;ICu/I(In+Ga)与能谱仪测得的浓度变化一致。LIBS技术能够实现薄膜中元素含量比例的快速检测,不同元素谱线强度的相对比值能够间接反映薄膜中元素含量的比值,验证了LIBS技术在薄膜分析方面的潜力,为优化磁控溅射制备铜铟镓硒薄膜的工作参数提供了方法和技术支持。     

共享单车和铜铟镓硒薄膜太阳电池注定有缘

本文结合铜铟镓硒薄膜太阳电池的优点,分析了该种电池在共享单车领域的应用优势,在此基础上,分析了该种电池在共享单车领域的市场前景以及目前国内产量供给情况.     

CIGS薄膜太阳能电池结构分析

阐述了影响铜铟镓硒(CIGS)薄膜太阳能电池性能和效率的技术因素,包括CIGS半导体材料的晶体结构、电池的结构组成、衬底材料的选择以及CIGS薄膜的Na掺杂等。分析了多元共蒸发法、硒化法沉积CIGS吸收层以及化学水浴法沉积Cd S缓冲层的具体工艺和特征,介绍了柔性CIGS薄膜太阳能电池的卷对卷技术,最后就CIGS薄膜太阳能电池的研发与商业化生产中遇到的挑战及解决方法进行了分析与归纳。     

CuInSe2薄膜的化学溶液制备方法

采用了一种低成本化学溶液法制备铜铟硒(CuInSe_2,CIS)薄膜.研究了预退火温度、硒化温度及基片衬底等实验参数对材料性能的影响.采用硝酸铜和氯化铟配置前驱体溶液,旋涂法制膜,后经480℃硒化退火得到CIS薄膜.XRD测试结果表明薄膜结晶性良好,具黄铜矿结构;SEM测试结果显示薄膜由较大晶粒组成,表面相对平整致密;EDX测试显示薄膜组分相对合理,略贫Cu而富Se.采用此薄膜为吸收层制备CIS原型薄膜太阳能电池,其光电测试显示单层CIS光伏响应达到1.6%.     

铝掺杂对铜铟铝硒粉末微结构及光吸收影响的研究

铜铟铝硒(Cu(In_(1–x)Al_x)Se_2,CIAS)因其成本比铜铟镓硒低而成为目前备受关注的一种太阳电池材料。本文采用溶剂热法制备出含有不同铝掺入量的CIAS四元化合物粉末。利用XRD、SEM、XPS和紫外-可见光光吸收谱系统研究铝掺入对铜铟铝硒化合物的微观结构及光吸收的影响。研究表明铝掺杂对铜铟铝硒的微观结构有着显著影响,适当的铝掺入有利于铜铟铝硒晶体生长,当铝掺入比例x为0.4时,晶体在(112)晶面择优生长最为明显,并且随铝掺入量的增加可导致其禁带宽度增加,这有利于太阳电池优化设计。     

Fabrication of high-quality ZnS buffer and its application in Cd-free CIGS solar cells

This paper provides the fabrication of Cd-free Cu（In,Ga）Se2 （CIGS） solar cells on soda-lime glass substrates. A high quality ZnS buffer layer is grown by chemical bath deposition （CBD） process with ZnSO4-NH3-SC （NH2）2 aqueous solution system. The X-ray diffraction （XRD） result shows that the as-deposited ZnS film has cubic （111） and （220） diffraction peaks. Scanning electron microscope （SEM） images indicate that the ZnS film has a dense and compact surface with good crystalline quality. Transmission measurement shows that the optical transmittance is about 90% when the wavelength is beyond 500 nm. The bandgap （Eg） value of the as-deposited ZnS film is estimated to be 3.54 eV. Finally, a competitive efficiency of 11.06% is demonstrated for the Cd-free CIGS solar cells with ZnS buffer layer after light soaking.     

CIGS Thin Films for Cd-Free Solar Cells by One-Step Sputtering Process

Cu(In_1?x Ga _x )Se₂ (CIGS) thin films were deposited by a one-step radio frequency (RF) magnetron sputtering process using a quaternary CIGS target. The influence of substrate temperature on the composition, structure, and optical properties of the CIGS films was investigated. All the CIGS films exhibited the chalcopyrite structure with a preferential orientation along the (112) direction. The CIGS film deposited at 623 K showed significant improvement in film crystallinity and surface morphology compared to films deposited at 523 and 573 K. To simplify the manufacturing procedure of solar cells and avoid the use of the toxic element Cd, the properties of ZnS films prepared by RF sputtering were also investigated. The results revealed that the sputtered ZnS film exhibits good lattice matching with the sputtered CIGS film with significantly lower optical absorption loss. Finally, all-sputtered Cd-free CIGS-based heterojunction solar cells with the structure SLG/Mo/CIGS/ZnS/AZO/Al grids were fabricated without post-selenization. Furthermore, the results demonstrated the feasibility of using a full sputtering process for the fabrication of Cd-free CIGS-based solar cell.     

Effect of MoSe2 on the performance of CIGS solar cells

A CuIn1-xGaxSe2 (CIGS) thin film solar cell model with MoSe2 transition layer was established, using SCAPS-1D software. The influence of MoSe2 interface layer formed between absorption layer CIGS and the back contact Mo on the solar cell performance was investigated.By changing the doping concentration,thickness and bandgap of MoSe2 layer, it is found that the MoSe2 and the variation of parameters have a significant effect on the electrical characteristics and photovoltaic parameters of CIGS thin film solar cells. Based on the energy band, the interfaces of Mo/MoSe2 and MoSe2/CIGS are analyzed. It is considered that Mo/MoSe2 is a Schottky contact, MoSe2/CIGS is an ohmic contact. When suitable parameters of MoSe2 layer are formed into the interface, it will provide a new path for designing CIGS solar cells with thinner absorption layer.     

High-efficiency cadmium-free Cu(In,Ga)Se2 thin-filmsolar cells with chemically deposited ZnS buffer layers

Cadmium-free Cu(In,Ga)Se₂ (CICS) thin-film solar cells with a MgF₂/ZnO:Al/CBD-ZnS/CIGS/Mo/SLG structure have been fabricated using chemical bath deposition (CBD)-ZnS buffer layers and high-quality CICS absorber layers grown using molecular beam epitaxy (MBE) system. The use of CBD-ZnS, which is a wider band gap material than CBD-CdS, improved the quantum efficiency of fabricated cells at short wavelengths, leading to an increase in the short-circuit current. The best cell at present yielded an active area efficiency of 16.9% which is the highest value reported previously for Cd-free CIGS thin-film solar cells. The as-fabricated solar cells exhibited a reversible light-soaking effect under AM 1.5, 100 mW/cm² illumination. This paper also presents a discussion of the issues relating to the use of the CBD-ZnS buffer material for improving device performance     

Effect of bath temperature on the properties of CuInxGa1-x Se2 thin films grown by the electrodeposition technique

Electrodeposition is a promising and low cost method to synthesize CulnxGa1-xSe2 (CIGS)thin films as an absorber layer for solar cells. The effect of bath temperature on the properties of CIGS thin films was investigated in this paper. CIGS films of 1 μm thickness were electrodeposited potentiostatically from aqueous solution, containing trisodium citrate as a complexing agent, on Mo/glass substrate under a voltage of-0.75 V, and bath temperatures were varied from 20 to 60 ℃. The effects of bath temperature on the properties of CIGS thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy. XRD revealed the presence of the CuIn0.7Ga0.3Se2 phase, the optimal phase for application in solar cells. The grain dimensions and crystallizability increase along with the increase of the bath temperature, and the films become stacked and homogeneous. There were few changes in surface morphology and the composition of the films.     

Fabrication and characterization of thin-film Cu (In,Ga) Se2 solar cells on a PET plastic substrate using screen printing

Chalcopyrite copper indium gallium diselenide (CIGS) ink was prepared by dissolving copper, indium, gallium acetylacetonate and Se powder in oleylamine using the hot injection methods. CIGS films were deposited on a PET plastic substrate by a screen-printing technique using CIGS ink with a Ga content ranging from 0.3 to 0.6. X-ray diffraction patterns reveal that the films exhibit a chalcopyrite-type structure. The crystalline grain sizes of the films decrease with increasing Ga content. AFM data shows that the root mean square (RMS) surface roughness of the CIGS film decreases with increasing Ga content. The effects of the Ga content in the CIGS absorber layer on the optical properties of the corresponding thin films and solar cells were studied. The band-gap energies of the CIGS thin films increased with an increasing Ga/(In+Ga) ratio. The short-circuit current (I_SC) of the solar cell decreased linearly with the Ga/(In+Ga) ratio, while the open-circuit voltage (V_OC) increased with this ratio. The solar cell exhibited its highest efficiency of 4.122% at a Ga/(In+Ga) ratio of 0.3.     

Improvement of the cell performance in the ZnS/Cu(In,Ga)Se2 solar cells by the sputter deposition of a bilayer ZnO : Al film

ZnS is a candidate to replace CdS as the buffer layer in Cu(In,Ga)Se₂ (CIGS) solar cells for Cd‐free commercial product. However, the resistance of ZnS is too large, and the photoconductivity is too small. Therefore, the thickness of the ZnS should be as thin as possible. However, a CIGS solar cell with a very thin ZnS buffer layer is vulnerable to the sputtering power of the ZnO : Al window layer deposition because of plasma damage. To improve the efficiency of CIGS solar cells with a chemical‐bath‐deposited ZnS buffer layer, the effect of the plasma damage by the sputter deposition of the ZnO : Al window layer should be understood. We have found that the efficiency of a CIGS solar cell consistently decreases with an increase in the sputtering power for the ZnO : Al window layer deposition onto the ZnS buffer layer because of plasma damage. To protect the ZnS/CIGS interface, a bilayer ZnO : Al film was developed. It consists of a 50‐nm‐thick ZnO : Al plasma protection layer deposited at a sputtering power of 50 W and a 100‐nm‐thick ZnO : Al conducting layer deposited at a sputtering power of 200 W. The introduction of a 50‐nm‐thick ZnO : Al layer deposited at 50 W prevented plasma damage by sputtering, resulting in a high open‐circuit voltage, a large fill factor, and shunt resistance. The ZnS/CIGS solar cell with the bilayer ZnO : Al film yielded a cell efficiency of 14.68%. Therefore, the application of bilayer ZnO : Al film to the window layer is suitable for CIGS solar cells with a ZnS buffer layer. Copyright © 2012 John Wiley & Sons, Ltd.     

Preparation of CuInxGa1−xSe2 solar cells by electron beam evaporation of powdered evaporants

Cu(In,Ga)Se₂ (CIGS) thin films were deposited by electron beam evaporation of ball-milled powders containing various amounts of gallium. The effects of the gallium concentration in the Cu(In,Ga)Se₂ on the structure, surface morphology and optical properties of the films were investigated using X-ray diffraction, energy-dispersive X-ray analysis, atomic force microscopy and optical spectroscopy. All of the films, which were deposited at 450 °C, were polycrystalline and exhibited a chalcopyrite structure with a (112) preferred orientation. The optical constants of the films were calculated. The grain size, the roughness and the band gap increased with increasing amounts of gallium in the films. A glass/TCO/CdS/CIGS/Au solar cell with 12.87% efficiency was prepared directly from the powdered material.     

Theoretical simulation of performances in CIGS thin-film solar cells with cadmium-free buffer layer

Copper indium gallium selenium (CIGS) thin film solar cells have become one of the hottest topics in solar energy due to their high photoelectric transformation efficiency. To real applications, CIGS thin film is covered by the buffer layer and absorption layer. Traditionally, cadmium sulfide (CdS) is inserted into the middle of the window layer (ZnO) and absorption layer (CIGS) as a buffer layer. However, the application of the GIGS/CdS thin film solar cells has been limited because of the environmental pollution resulting from the toxic cadmium atom. Although zinc sulfide (ZnS) has been proposed to be one of the candidates, the performance of such battery cells has not been investigated. Here, in this paper, we systematically study the possibility of using zinc sulfide (ZnS) as a buffer layer. By including the effects of thickness, concentration of a buffer layer, intrinsic layer and the absorbing layer, we find that photoelectric transformation efficiency of ZnO/ZnS(n)/CIGS(i)/CIGS(p) solar cell is about 17.22%, which is qualified as a commercial solar cell. Moreover, we also find that the open-circuit voltage is~0.60 V, the short-circuit current is~36.99 mA/cm² and the filled factor is~77.44%. Therefore, our results suggest that zinc sulfide may be the potential candidate of CdS as a buffer layer.     

Cu-In-Ga-Se nanoparticle colloids as spray deposition precursors for Cu(In, Ga)Se2 solar cell materials

The use of nanoparticle colloids for spray deposition of Cu(In,Ga)Se₂ (CIGS) precursor films and subsequent fabrication of CIGS solar cells has been investigated. According to this approach, amorphous Cu-In-Ga-Se nanoparticle colloids were first prepared by reacting a mixture of CuI, InI₃, and GaI₃ in pyridine with Na₂Se in methanol at reduced temperature. Purified colloid was sprayed onto heated molybdenum-coated sodalime glass substrates to form Cu-In-Ga-Se precursor films. After thermal processing of the precursor films under a selenium ambient, CIGS solar cells were fabricated. Cu-In-Ga-Se colloids and films were characterized by inductively coupled plasma atomic emission spectroscopy, thermogravimetric analysis, transmission electron microscopy, x-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy. Standard current-voltage characterization was performed on the CIGS solar cell devices with the best film exhibiting a solar conversion efficiency of 4.6%.