宽电压输入可自动均流的PWM型LED驱动器

为了满足LED驱动在宽电压范围内的性能,设计了一种基于Boost-Buck PFC电路的LED驱动器.当输入交流电压变化范围较宽时,PFC的输出依然可以稳定在较低值,可确保功率器件始终保持较小的开关应力.同时,为了满足LED的调光功能,并确保大功率照明场合LED串并联应用的稳定性,各LED并联支路增加了独立调光模块,可根据不同的应用场合工作在独立线性调光、独立PWM调光以及线性PWM复合调光模式,并且通过电流和温度信息的采集各支路可实现自动均流.最后以两路LED并联为基础,搭建实验样机,实现了各支路之间的独立调光以及自动均流.     

LED汽车前照灯驱动电路设计与仿真

随着大功率LED性价比的提高,输出光流量的增加,使LED应用在汽车前照灯成为可能。在输入电压在10～14V之间变化,负载采用8颗700mA大功率白光LED的条件下确定驱动方式、拓扑结构和调光方式,设计一种基于LTC3783芯片PWM控制LED亮度的恒流I。ED汽车前照灯驱动电路,并用LTspiceIV软件对电路进行了仿真。结果表明,输入电压在10～14V变化时输出电流为一个710mA均值,有0．7％纹波的电流,电流精度为2．1％,输出电压为28．6V,输出功率为20w,电路转换效率为91％。有PWM信号输入时,电路输出一个与PWM信号相同占空比的电流。通过调节PWM信号的占空比实现LED亮度的控制。     

白光LED的PWM驱动方式分析

白光由于所具有的低成本、长寿命和小体积的特性,正在迅速成为照明和背光源的选择,其驱动电路的研究受到广泛关注.LED实现调光功能的方法可分为2种:模拟调光和PWM调光.采用模拟调光技术的缺点是:随着正向电流改变会产生色偏现象,而PWM调光通过开启和关闭LED来改变正向电流导通时间以达到亮度调整的效果.本文将说明如何利用PWM来调整亮度,设计了适合照明应用的LED驱动电路,经使用取得了良好的照明效果.     

带PWM调光功能的白光LED驱动芯片系列

SB42511、SB42520和SB4282的输入电压为6～25V,输出电流可达1A;内置温度保护电路,限流保护电路和PWM调光电路;在串接多个LED时的效率可以达到95％以上;可以进行PWM调光,通过外接PWM信号调整LED的输出电流,在100Hz～2kHz范围内可以达到良好的调光效果;另外,SB42511、SB42520芯片内部的自举电路采用独特的控制方法,不需要外接肖特基,     

高亮度LED的高效率电流驱动电路

本文介绍调整高亮度LED电流的简单电路.它包括一个流行的高集成降压开关稳压器,此开关稳压器能精确地控制LED电流.MAX5035是工作在125KHz固定频率的DC/DC转换器,其宽范围的输入电压(7.5V～76V)特别适合于汽车应用.对于亮度控制,它能实现模拟(线性调光)或低频占空比调制(PWM调光).     

一种用于开关电源的新型模拟调光电路

设计了一种用于LED驱动电源的模拟调光电路。该调光电路由外部控制产生一个占空比可调的振荡信号来线性改变恒流的基准电压;基准电压的改变会产生对功率管开关信号（PWM）占空比的调节,从而实现LED电源输出电流的线性调节。基于TSMC₀.5μm BCD工艺,用Hspice进行仿真,结果表明:这种线性调光电路能精确控制流过负载LED的电流,实现对LED灯的线性调光。     

高效率、高调光比LED恒流驱动电路的设计

文中提出了一种宽电压输入、高效率、高调光比LED恒流驱动电路。在迟滞电流控制模式下,该电路具有结构简单、动态响应快、不需要补偿电路等优点。通过外部引脚,可以方便的进行LED开关、模拟调光和PWM调光。LED恒流驱动电路基于CSMC的1μm40VCDMOS工艺,采用HSPICE进行仿真验证,结果表明在8～30V输入电压范围内,电路输出电流最大可达1.2A,输出电流精度可控制在5.5%以内,电源效率可高达97%。     

一种无电解电容的新型削峰填谷电路

传统AC/DC变换器存在的电解电容与LED寿命相差甚远,而且大量存在的电解电容严重影响LED系统的稳定性。基于此,文中提出一种前级Boost型单级LED驱动器,通过增加一个选择性开关器件以优化传统填谷电路的不足。添加的开关器件在低压输入下打开,并在高压输入下关闭,以保证全载范围内达得到最优性能;同时,减小了高电压输入的开关应力。此外,该驱动器采用脉宽调制(PWM)调光技术,克服了轻载时固有的电压应力问题。本文介绍了驱动器的工作原理、设计过程以及控制策略。最后,在PSIM仿真平台和样机实验进行了验证,结果表明所提驱动器的可行性。     

一种高性能可智能控制型LED路灯驱动电源的设计

本文针对传统驱动电源电能损耗大、效率和智能化程度低的缺点,设计了一款适用于大功率LED路灯的高性能可智能控制型驱动电源。本文选择了多级驱动方案,即功率因数校正(PFC)电路、LLC谐振控制电路和多路恒流输出的三级式结构。本文采用合理的设计,优化了功率校正因数,增大了输入电压范围,提高了整机效率,使输出电流在全负载范围内更加稳定,同时增加了PWM调光控制功能,可根据外界环境的变化智能控制LED路灯的亮度,从而达到进一步节能减排的效果。     

降低亮度再现真实色彩PWM调光增强LED显示器色纯度

调光功能的实现方法可分为两种:模拟和PWM.采用模拟调光技术的缺点是LED会随着正向电流改变而产生色偏现象;而PWM调光通过开启和关闭LED来改变正向电流导通时间以达到亮度调整效果.本文将说明如何利用PWM来调整LED亮度(又称为灰阶调光),同时继续保持原有色纯度以创造出更完美的画质.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.