Multisubband electron mobility in a parabolic quantum well structure under the influence of an applied electric field

We study the multisubband electron mobility in a barrier delta doped AlχGal-χAs parabolic quantum well structure under the influence of an applied electric field perpendicular to the interface plane. We consider the alloy fraction χ = 0.3 for barriers and vary x from 0.0 to 0.1 for the parabolic well. Electrons diffuse into the well and confine within the triangular like potentials near the interfaces due to Coulomb interaction with ionized donors. The parabolic structure potential, being opposite in nature, partly compensates the Coulomb potential. The external electric field further amends the potential structure leading to an asymmetric potential profile. Accordingly the energy levels, wave functions and occupation of subbands change. We calculate low temperature electron mobility as a function of the electric field and show that when two subbands are occupied, the mobility is mostly dominated by ionised impurity scattering mediated by intersubband effects. As the field increases transition from double subband to single subband occupancy occurs. A sudden enhancement in mobility is obtained due to curtailment of intersubband effects. Thereafter the mobility is governed by both impurity and alloy disorder scatterings. Our analysis of mobility as a function of the electric field for different structural parameters shows interesting results.     

一种用于高压电平位移电路结构的准三维模拟方法

A new quasi-three-dimensional （quasi-3D） numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.     

方形半导体量子线中光吸收的横向斯塔克效应

The ground and few excited states of the electrons confined in a square GaAs quantum wire(QW) subjected to an external transverse electric field are investigated using the finite difference method within the effective-mass approximation. When the transverse electric field is applied along a side of the square quantum wire, the calculation of the eigenstates of the quantum wire has an exactly solvable problem whose solutions involve the linear combinations of two independent Airy functions. Compared with the exact analytical results using Airy functions, the results obtained by the use of the finite difference method in terms of the eigenstates of the particle in the QW are in excellent agreement. Subsequently, it is considered that the eigenstates of the particle depend on the orientations of the electric field with respect to the center axis of the QW. It is interesting that the peak value of the energy is found for the field directed along the diagonal in the QW, which can lead to a large energy shift. Meanwhile, dependence of the optical absorption phenomenon in the square QW on the optical field and applied electric field is investigated. It is shown that the optical absorption spectrum depends highly upon the polarization of the optical field and the applied electric field intensities and orientations.     

Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings

Arbitrary magnetic field modulations to the semiconductor pump with both the Rashba and Dresselhaus spin-orbit couplings (SOC) are studied. The pump is driven by double time-dependent delta potentials, which are formed in the interfaces between the semiconductor region and two normal leads. Based on the Floquet scattering approach, our calculations show that various currents can be pumped by couplings of the magnetic fields and the SOCs. Pure spin currents modulated by the arbitrary magnetic fields are discussed in detail.     

Delay and Energy Consumption Oriented UAV Inspection Business Collaboration Computing Mechanism in Edge Computing Based Electric Power IoT

With the development of Internet of things(IoT) technology and smart grid infrastructure,edge computing has become an effective solution to meet the delay requirements of the electric power IoT. Due to the limitation of battery capacity and data transmission mode of IoT terminals, the business collaboration computing must consider the energy consumption of the terminals. Since delay and energy consumption are the optimization goals of two co-directional changes, it is difficult to find a busines...     

THE BOUNDARY ELEMENT METHOD IN EM-MWD

The linear boundary element method for electromagnetic fields is taken to deal withthe excitation of a non-symmetrical electric dipole in a lossy half space.A simple and practicalalgorithm is offered to the Measurement While Drilling with Electromagnetic waves(EM-MWD),The calculation for two models under the low frequency limits are compared with the experimentsand the results calculated with the theory of stationary current fields.     

Electronic structures and transport properties of BN nanodot superlattices of armchair graphene nanoribbons

The electronic and transport properties of embedded boron nitride(BN) nanodot superlattices of armchair graphene nanoribbons are studied by first-principles calculations.The band structure of the graphene superlattice strongly depends on the geometric shape and size of the BN nanodot,as well as the concentration of nanodots.The conduction bands and valence bands near the Fermi level are nearly symmetric,which is induced by electron-hole symmetry.When B and N atoms in the graphene superlattices with a triangular BN nanodot are exchanged,the valance bands and conduction bands are inverted with respect to the Fermi level due to electron-hole symmetry.In addition,the hybridization ofπorbitals from C and redundant B atoms or N atoms leads to a localized band appearing near the Fermi level.Our results also show a series of resonant peaks appearing in the conductance.This strongly depends on the distance of the two BN nanodots and on the shape of the BN nanodot. Controlling these parameters might allow the modulation of the electronic response of the systems.     

CuPc/C60 heterojunction thin film optoelectronic devices

The optoelectronic properties of heterojunction thin film device with ITO/CuPc/C60/Al structure have been investigated through analyzing their current–voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device CuPc acts as an optically active layer, C60 as the electron–transporting layer and ITO and Al as electrodes. It is observed that under illumination, the excitons are formed, which subsequently drift towards the interface with C60, where an internal electric field is present. The excitons that reach to the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at electrode–organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons.     

Research on Electric Field Confinement Effect in Silicon LED Fabricated by Standard CMOS Technology

The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.’s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices is N well-P+ junction.P+ area is the wedge-shaped structure,which is embedded in N well.The leaf-type silicon LED device is a combination of the three wedge-shaped LED devices.The main difference between the two devices is their different electrode distribution,which is mainly in order to analyze the application of electric field confinement(EFC).The devices’ micrographs were measured with the Olympus IC test microscope.The forward and reverse bias electrical characteristics of the devices were tested.Light measurements of the devices show that the electrode layout is very important when the electric field confinement is applied.     

A charge pump for driving CMOS active pixel reset

To overcome the limitation of low image signal swing range and long reset time in four Iransistor CMOS active pixel image sensor, a charge pump circuit is presented to improve the pixel reset performance. The charge pump circuit consists of two stage switch capacitor serial voltage doubler. Cross-coupled MOSFET switch structure with well close and open performance is used in the second stage of the charge pump. The pixel reset transistor with gate voltage driven by output of the pump works in linear region, which can accelerate reset process and complete reset is achieved. The simulation results show that output of the charge pump is enhanced from 1.2 to 4.2 V with voltage ripple lower than 6 inV. The pixel reset time is reduced to 1.14 ns in dark. Image smear due to non-completely reset is elIminated and the image signal swing range is enlarged. The charge pump is successfully embedded in a CMOS image sensor chip with 0.3 × 10^6 pixels.     

Determination of the Photon Lifetime for DFB Lasers

The photon lifetime of the distributed feedback (DFB) laser is obtained through the relations between cavity photon flux and power associated with the electric fields. The solution of the coupled wave equations provides the propagation parameters and the amplitude gain coefficients for which numerical and approximate solutions are obtained. Using the photon lifetime the threshold condition of the DFB laser within a fixed mirror cavity is determined. The evaluation of both Fabry-Peacuterot and DFB modes is shown by the calculation, using two different photon lifetimes, of all modal concentrations, with the Fermi energy as the independent variable. The current density is also evaluated using the Fermi energy and threshold current is identified as the value when the Fermi energy clamps     

Tunneling currents in mesoscopic rings

Persistent currents and currents circulating along an imperfect mesoscopic ring threaded by an external magnetic field are investigated. We study the effect of the Coulomb interaction on a ring with a double-barrier structure within it for two situations: an isolated ring and a ring connected to two reservoirs at different chemical potentials. For the case of the isolated ring the magnetic flux plays the role of the electric field in the standard mesoscopic heterostructures. For the isolated ring the ground state is obtained using a Lanczos algorithm. The persistent current, the total spin of the ground state and the charge distribution are calculated. The current exhibits a bistable behavior. The Coulomb blockade is, to some extent, masked by the Kondo effect. For the ring connected to leads, the presence of the double-barrier structure modifies substantially the interference phenomena shown by perfect rings due to the Bohm-Aharonov effect. The behavior of the current as a function of the magnetic flux is also affected by the Kondo effect.     

Diakoptic theory for multielement antennas

A theory is presented for the analysis of multielement antennas which consist of interconnected, conductive structure elements of electrically small dimensions. The theory is based on the retarded electromagnetic potentials which permit a diakoptic approach to the problem. The antenna is broken up into its individual structure elements. Each element is assumed to be excited by currents which are impressed at its terminals, i.e., junctions with adjacent elements (current coupling) and by the electric fields of the currents and charges on all the other elements (fieid coupling). Both excitations are treated independently. Each impressed current produces a "dominant" current distribution, a characteristic of the element, which can be readily computed. Current coupling is formulated by "intrinsic" impedance matrices which relate the scaler potentials at the terminals of an element, caused by its dominant current distributions, to the impressed currents of the element. Field coupling produces "scatter" currents on all the elements and is formulated by a "fieid-coupling" matrix which relates the scalar potentials at the terminals, caused by field coupling, to the impressed currents at all the terminals. Intrinsic and "field-coupling" matrices are combined to form the "complete" impedance matrix of the diakopted antenna. Enforcing continuity of the currents and equality of the scalar potentials at all the interconnections between the elements yields a system of linear equations for the junction currents and the input impedance of the antenna. Current coupling dominates field coupling. Fieid coupling is primarily affected by the dominant current distributions of the elements, and in general the scatter currents have negligible effect on it. Although detailed numerical investigations will be presented in another paper, a simple example is included here to demonstrate that the diakoptic theory yields very good results even if greatly simplified assumptions are made.     

强电场对NiO电子结构性质的影响研究

基于平面波密度泛函理论研究了电场强度为10V?nm-1下立方结构氧化镍的电子结构性质。结果表明:立方相氧化镍在电场强度10V?nm-1下呈现导体的能带结构,价带上移到导带,态密度谱图在多个能量取得最值,局域化效应增强,费米能级附近的态密度增大为原系统的2倍多。费米能级上的载流子浓度由4 e/eV增大到15 e/eV,这源于Op、Nis、Nid态对费米面的贡献。强电场下的电子在不同量子状态之间显示了明显的转移,介电函数计算表明强电场下体系在0.32 eV附近具有最大的吸收,吸收峰峰值66.89。强电场明显调控了NiO的电学、光学和场致光吸收性能。     

Development of a Peltier Current Lead for the 200-m-Class Superconducting Direct Current Transmission and Distribution System

Reducing cryogenic heat leaks is critical for superconducting applications. Reduction of heat leak at the terminals is essential for uses with short-length applications, where cryogenic losses at the terminals dominate. We are developing a 200-m-class superconducting direct current (DC) transmission and distribution system (CASER-2), and have used a Peltier current lead (PCL) for heat insulation at the terminals. The PCL consists of thermoelectric elements and copper leads, which enhance the performance of superconducting systems. As DC flows through the current lead, thermoelectric elements on opposite terminations of a superconducting line can be used to decrease the heat ingress to the cryogenic environment (n-type on one end, p-type on the opposite end). During the current feeding and cooling test, a large temperature difference was observed across thermoelectric elements in the PCL. This demonstrates that we have successfully insulated the heat leak at the current lead. During the fourth cooling test, we established a new PCL design with p-type elements at terminal B, and then compared the performance of the terminals. Several improvements were implemented, including balancing the resistances of the PCL to enhance the stability of the superconducting systems.     

外电场作用下InP电子结构与光学性质的计算

磷化铟(InP)已成为光电器件和微电子器件不可或缺的重要半导体材料。采用基于密度泛函理论框架下的第一性原理平面波赝势方法,计算了不同外电场作用下InP超胞的电子结构和光学性质。计算结果表明:未加电场时InP的能隙值为0.876eV,随着z轴方向的外电场增大,该值逐渐减小,当电场强度达到1.0×10⁸V/cm时,InP的禁带宽度几乎为0。InP导带区域的总态密度随着外电场增大逐渐向费米面偏移,态密度跨度变小,而价带与导带的情况恰恰相反。外电场对介电函数虚部的影响主要体现在低能量区域(0~7eV),而在较高能量区域内可忽略不计。外电场对InP吸收系数的影响主要集中在近红外波段。     

量子化介观RLC电路的热真空态与期望值

鉴于介观RLC(电阻-电容-电感)电路中的电流要产生焦耳热，应考虑有限温度下的电路量子效应。对于处在热环境中的平衡态，任何力学量的期望值可由系综平均表示。 在此基础上，利用有序算符内的积分技术，首次求出介观RLC电路所对应的热真空态，最后，借助于理论计算，储存在元件与消耗在元件上的系综平均能量可由热真空态的纯态期望值来代替。     

介观L-C电路中电容、电感和外源流突变所产生的量子压缩

对于LC电路量子化方案所得到的哈密顿量，采用有序算符内的积分技术（IWOP技术）进行分析与讨论了在电容、电感、外源流在突变时所产生的量子压缩效应，结果表明：电容突变反映在正交相 呈现压缩效应；电感突变反映在另一正交相 呈现压缩效应；而外源流的非线性突变反映出来的是数-相压缩。     

Model of temperature dependence for gain shape of erbium-dopedfiber amplifier

The problem of modeling the temperature dependence of erbium-doped fiber amplifier (EDFAs) is important for multichannel optical WDM systems. A physical model is presented in this paper, which could be used to predict the gain change under temperature variations for such systems. Some of the input parameters for the model are the erbium energy sublevel density, excitation coefficients from lower sublevels to upper sublevels of erbium ions, and electron distribution over energy levels. It is difficult to measure these parameters. In order to use the model for gain shape calculations, some simplifications are demonstrated. These simplifications lead to two numerical models, which are shown to be consistent with experimental data with reasonable accuracy, and are based only on two spectral measurements for different temperatures. Both numerical models were tested for the signal band and the 980 nm pump band of a typical erbium-doped fiber