无线信元反向复用及动态容量调整技术研究

根据ATM无线链路组网需求,提出了适合无线链路反向复用的编码及动态容量调整技术。该技术适用于利用微波、散射和卫星等传输手段进行ATM/MPLS无线机动组网,编码纠错门限为2×10-3,当通信节点无线传输距离增大或信道传输质量变恶劣时,通过动态容量调整技术自动降低信号速率以提高业务传输质量,该项技术特别适合新一代宽带网络。     

视频流传输中的差错复原视频编码技术

视频压缩技术在采用预测技术、变换编码技术和可变长熵编码技术以减少冗余信息的同时,也降低了视频流的容错能力.传输信道中的差错,不仅严重损害了视频服务质量,甚至会使通信系统崩溃,因此,在有错信道上进行视频传输,差错复原视频编码技术就显得尤为重要.对差错复原视频编码技术进行了概括和总结,首先指出在视频传输过程中存在的由于传输错误而引发的比特流同步丢失及错误蔓延问题,然后研究了解决这些问题的差错复原视频编码方法,最后指出:可伸缩视频编码和多描述视频编码是差错复原视频编码的发展方向;多描述编码同多路径技术相结合,能显著提高压缩视频信号的错误恢复能力和传输信道的性能.     

无线ATM传输技术研究

从分析ATM业务传输的需求和技术指标出发,提出了适合E12、E22接口映射、传输的统一宏信元编码,并采用了抗衰落帧同步设计技术,该编码对纠正突发误码非常有效,纠错门限为2×10-3,适合具有衰落性能的微波、散射等无线信道传输。该设计拓宽了ATM无线传输组网的应用范围,适用于ATM技术无线机动组网。     

移动视频通信的差错控制技术

移动信道是易错、窄带信道,而压缩视频对信道传输差错的影响比较敏感,因此,移动视频通信的差错控制技术成为一个研究热点。该文从信源编码、信道编码方面探讨了移动视频通信的差错控制技术,并用软件实现了H.263+压缩视频在瑞利衰落移动信道上的模拟传输及差错控制,验证移动视频通信差错控制技术的有效性和鲁棒性。     

基于H．263视频解码的错误检测和掩盖

本文提出了一种应用于H．263视频编码传输的纠错方法,即基于H．263视频解码的错误检测和掩盖算法。这种算法可应用于公共交换电话网（PSTN）,Internet或移动信道的视频通信。模拟结果表明,这种纠错方法在不降低编码效率的前提下,使在有噪声干扰的信道上传输图像的质量有显著的改善。     

级连码的应用

本文简要介绍了级连码的应用。在战术通信网和其它通信系统中,通常用一个话路通道传输低速率数据。因而,信道冗余大。可利用载码通道的高冗余度,应用级连码纠错技术进行纠错实验证明,在信道误码率高达10~(-2)量级时,数据误码率可以改善四个量级以上。本文给出了经白高斯噪声信道测试的结果。     

一种基于不等纠错保护的图像传输方法

对噪声信道上的图像传输方法进行了研究,提出了一种新的基于不等纠错保护的图像传输方法,该方法在编码端利用纠错算术码对SPIHT码流进行不等纠错保护,根据SPIHT码流各个不同重要程度的部分采用不同禁用区间的纠错算术码进行不同程度的差错保护,相比传统的基于不等纠错保护图像传输方法而言,可获得近似连续可变的编码码率;在解码端,采用堆栈序列估计算法进行信道估计后再进行SPIHT解码,重建图像.实验结果表明,与经典的Guionnet不等纠错保护传输方法以及分离编码传输方法相比,所提出的传输方法具有较为明显的性能增益.     

MPEG-2视频系统纠错编解码的FPGA实现

针对MPEG-2传输流,提出了在通信信道传输时结合交织的纠错编解码方案,并完成硬件实现.纠错编码部分包括RS码、卷积交织和增信删余卷积码,采用硬件描述语言VHDL作设计输入,使用现场可编程门阵列FPGA实现.纠错解码部分主要采用专用解码芯片实现.结合了纠错技术的MPEG-2视频系统使传输误码率从10-2～10-3降低到10-7～10-8,该系统已经应用于实时监控中,性能良好.     

无线信道上实时视频传输的Turbo码纠错

提出了自动请求重传(ARQ)和Turbo码前向纠错的混合纠错方案,并将此方案与优先权编码传输方法巧妙地结合起来,既减少了视频数据量,又缩短了时延,达到实时传输的目的。实验结果表明,在无线信道上进行图像传输时,纠错性能好,适合于在分组丢失率较高的无线信道上传榆视频信号,而且信号的平均峰值信噪比与其他类似的方案相比要高0.8dB以上。     

级联码结合交织技术的纠错性能研究

本文将格状编码调制(TCM)技术与RS纠错码相结合,研究在数字传输系统中的纠错性能与抗干扰能力,给出了数据交织与非交织条件下差错控制系统的计算机模拟结果。模拟结果表明：采用级联码与交织技术可使信道传输的误码率从10^-3降至10^-7,编码增益提高35dB。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.