定向沉积法对Nd2Fe14B薄膜形态和磁性能的影响

采用直流励磁性溅射法制备Nd2Fe14B稀土磁薄膜。通过对衬底预热，在溅射过程中持续动态加热并保湿10min，实现定向沉积。主要考虑了该方法对薄膜磁性能的影响。结果表明薄膜取向度良好，有明显柱状生长迹象。薄膜矫顽力大磊提高，H1/HII比值改善。在预热湿度200℃逐渐加热到500℃并保湿10min时，薄膜磁性能最佳。     

倾斜溅射对CoFeB薄膜条纹磁畴结构与磁各向异性的影响

利用倾斜溅射的方法制备了非晶Co Fe B磁性薄膜,研究了倾斜溅射对非晶Co Fe B磁性薄膜条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律。结果表明,倾斜溅射可以有效地降低Co Fe B非晶薄膜条纹磁畴结构出现的临界厚度,无倾斜溅射时,Co Fe B薄膜出现条纹磁畴结构的临界厚度大于240 nm,倾斜溅射时,出现条纹磁畴结构的临界厚度小于240 nm。磁性测试结果表明,对于具有条纹磁畴结构的Co Fe B薄膜,倾斜溅射不仅可以提高磁性薄膜的面内静态磁各向异性的强度,同时还可以增强面内转动磁各向异性与垂直磁各向异性的强度。随着倾斜溅射角度的逐渐增大,磁各向异性的强度均呈现增大的趋势。XRD和TEM观测结果证明,Co Fe B薄膜趋于非晶结构,同时,SEM观察结果表明,Co Fe B薄膜虽然不存在长程有序的晶体结构,但依然可以形成柱状结构,由于倾斜溅射技术,形成的柱状结构呈倾斜状态,从而增强了薄膜的垂直磁各向异性,导致条纹磁畴结构的出现。     

退火对TbCo薄膜结构和磁性能的影响

研究了真空退火对TbCo薄膜结构和磁性能的影响。结果表明：薄膜从溅射态的非晶薄膜转化为退火态的微晶薄膜，并以(100)面择优取向，其c轴平行于基片。在真空退火不改变TbCo薄膜的成分的条件下，发现TbCo薄膜从溅射态的垂直磁化膜转化为退火态的面内膜。     

SmCo非晶及纳米晶薄膜的磁性及微结构

稀土过渡族金属磁性薄膜作为高密度磁记录材料引起科技界的广泛关注。作为磁记录介质要求具有小的磁粒尺寸才可能有高的记录密度。通过溅射制出非晶膜，再通过控制回火使其晶化得到小的磁粒尺寸是比较好的方法。我们用多靶磁控溅射制备出非晶SmCo薄膜，研究其晶化和磁性能及微结构之间的变化关系。并对其磁性变化规律进行了讨论。     

钴镍基磁性薄膜的研究现状及进展

介绍了广泛应用于电子行业的钴镍基磁性薄膜,讨论了磁性薄膜的分类、制备方法、钴镍基磁性薄膜的应用领域以及当前研究的发展趋势。磁性薄膜按其性能的不同一般可以分为软磁薄膜、磁记录薄膜、磁光记录薄膜等。其制备方法有溅射法、电镀法、化学镀法等。钴镍基磁性薄膜的研究主要集中在稀土介入、纳米领域以及非晶态镀层领域,可以看出这些领域也是钴镍基磁性薄膜今后的研究方向。     

退火温度对SmCo非晶薄膜显微结构和磁性能的影响

用直流磁控溅射方法制备了非晶态的SmCo磁性薄膜，并通过不同的退火处理使其具有不同晶粒大小的晶化组织和磁性能。用透射电镜(TEM)及电子衍射分析薄膜在不同状态下的微观组织形貌和相结构，用振动样品磁强计(VSM)分析薄膜的磁性能变化规律。结果表明，溅射态薄膜为非晶，在400℃退火薄膜已晶化，在450℃退火时晶粒均匀细小且磁性能优良；500℃以上退火时出现不均匀粗大晶粒，对应的磁性能降低。同时探讨了SmCo磁控溅射非晶磁性薄膜晶化过程的组织结构和磁性能变化的关系。     

磁性薄膜的制备

目前制造磁性薄膜的方法,可分为四大类。第一类称为真空蒸镀法,有电阻加热法、电子束加热法、激光束加热法,还有真空电弧蒸镀法。第Th类是溅射成漠法,这类方法包括磁控管溅射技术,4极等离子溅射技术,对向靶材溅射法,离子束溅射法和离子束堆积法。第三大类是CVD法和LPE法,CVD法即化学气相沉积法而LPE法则是液相外延生长法（Liguiphaseepitaxialgfowth）。第四类是电镀法,它包括电镀磁性合金膜法,还有电镀铁氧体膜法。磁性薄膜的制备     

SmCo薄膜的不均匀晶化及其磁性能

采用不同的磁控溅射和回火工艺制备了SmCo磁性薄膜.用能谱仪对不同工艺溅射的样品进行了化学成分分析; 用透射电子显微镜和振动样品磁强计(VSM)研究了薄膜的显微结构和磁性能.结果表明: 溅射态的薄膜为非晶态并具有软磁特征; 当回火温度位于400～ 450℃之间时, 薄膜的微观组织均匀细小, 且随着回火温度增加, 矫顽力增大, 并在450℃回火的样品中得到了最大的矫顽力.回火温度500℃后, 薄膜微观组织中晶粒出现了不均匀粗化, 矫顽力明显降低.     

掺杂Ti对Fe－N薄膜结构与磁性的影响

用对向靶溅射仪制备出含多量Ｆｅ（１６）Ｎ２相的（Ｆｅ，Ｔｉ）－Ｎ薄膜，研究了掺杂Ｔｉ对Ｆｅ－Ｎ薄膜结构与磁性的影响，在溅射Ｆｅ－Ｎ薄膜时加入适量的Ｔｉ可提高Ｆｅ－Ｎ薄膜中Ｆｅ（１６）Ｎ２相的含量．Ｔｉ含量（原子分数）在０—２５％时薄膜饱和磁化强度均高于纯Ｆｅ的值；Ｔｉ浓度为１０％时，薄膜磁化强度高达２．６８Ｔ，比纯Ｆｅ的饱和磁化强度值高２０％．     

掺杂Ti对Fe—N薄膜结构与磁性的影响

用对向靶溅射仪制备出含多量Ｆｅ（１６）Ｎ２相的（Ｆｅ，Ｔｉ）－Ｎ薄膜，研究了掺杂Ｔｉ对Ｆｅ－Ｎ薄膜结构与磁性的影响，在溅射Ｆｅ－Ｎ薄膜时加入适量的Ｔｉ可提高Ｆｅ－Ｎ薄膜中Ｆｅ（１６）Ｎ２相的含量．Ｔｉ含量（原子分数）在０—２５％时薄膜饱和磁化强度均高于纯Ｆｅ的值；Ｔｉ浓度为１０％时，薄膜磁化强度高达２．６８Ｔ，比纯Ｆｅ的饱和磁化强度值高２０％．     

铁基多层纳米磁性薄膜的组织与磁性能研究

利用表面刻蚀镀膜技术制备了铁基多层纳米磁性薄膜,通过刻蚀镀膜控制参数的调整,可以精确地控制薄膜的厚度。然后对薄膜进行退火处理,使薄膜晶化。最后,对薄膜磁性能进行了测量。     

国内外磁控溅射靶材的研究进展

磁控溅射以溅射温度低、沉积速率高的特点而被广泛应用于各种薄膜制造中,如单层或复合薄膜、磁性或超导薄膜以及有一定用途的功能性薄膜等,在科学领域以及工业生产中发挥着不可替代的作用。在介绍磁控溅射原理的基础上,阐述了靶材刻蚀机理,针对传统磁控溅射系统中靶材利用率低、刻蚀形貌不均匀等现状,从改善靶面磁场分布和模拟靶材刻蚀形貌两方面对国内外最新的研究进展进行总结与分析。研究表明,通过改变磁体的空间布置或增加导磁片能有效改善靶面磁场分布,采用适当的运动部件实现磁场和靶材的相对运动能有效扩展靶材的溅射面积,提高靶材利用率。在靶材刻蚀模拟中,通过改变溅射过程中的工艺条件(磁场强度、工作电压等)来研究靶面等离子特性,结果显示靶材刻蚀形貌会随着磁场强度的增加而变窄,靶材刻蚀速率会随工作电压的增大而增大等,这些研究成果对磁控溅射工艺参数的优化具有指导意义。最后,对靶材冷却系统的设计、靶材表面处理等对溅射过程的影响进行了简要展望。     

功率对磁控溅射TbDyFe薄膜磁致伸缩性能的影响

采用直流磁控溅射工艺制备TbDyFe磁致伸缩薄膜，通过考察薄膜成分及其微结构，分析研究了溅射功率对薄膜磁致伸缩性能的影响。结果表明，同一薄膜内部成分相当均一，但不同溅射功率条件下的薄膜成分相异。溅射功率较低，薄膜内部微柱状体结构导致了磁各向异性的产生，磁致伸缩性能下降；溅射功率提高到120W，微柱状体结构消失，薄膜内部趋于均一连续，磁致伸缩性能较好。     

Synthesis of TbCu7-type Structural SmCo-based Films for Microelectromechanical System Applications

微机电系统(MEMS)的发展要求Si基片上的永磁薄膜具有良好的热稳定性。采用磁控溅射工艺在单晶Si(100)基片上沉积了SmCo基永磁薄膜,研究了溅射参数对薄膜沉积速率、微观结构、晶体结构和磁性能的影响。结果表明:通过调整溅射参数可以获得TbCu7型结构的SmCo基永磁薄膜。该薄膜具有良好的晶粒取向和微观结构,因而获得了较好的面内磁性能,其反磁化过程主要受控于畴壁钉扎机制。     

Influence of Oblique Sputtering on Stripe Magnetic Domain Structure and Magnetic Anisotropy of CoFeB Thin FilmsEI北大核心CSCD

Magnetic anisotropy is one of the most important fundamental properties of magnetic thin film. The strength of magnetic anisotropy determines the ferromagnetic resonance frequency of magnetic films in the high-frequency applications. Because of the directionality of conventional static magnetic anisotropy in magnetic film, the high-frequency device usually shows an obvious directionality. When the microwave magnetic fi eld deviates from the perpendicular direction of magnetic anisotropy, the devices cannot reveal their best performance. The magnetic film with a stripe magnetic domain structure displays an in-plane rotatable magnetic anisotropy, which can be an important strategy to solve the problem of magnetic fi eld orientation dependent performance in high-frequency device. Therefore, the magnetic domain, the magnetic anisotropy, and the high-frequency behaviors for magnetic fi lms with a stripe magnetic domain structure have received extensive attention. Previously, most of the studies focused on the stripe magnetic domain structure of polycrystalline thin films. However, less attention was paid on amorphous magnetic thin films. Since the amorphous magnetic films have no long-range ordered crystal structure, no magnetocrystalline anisotropy, no grain boundary defects resistance hindering the domain wall displacement, they usually show excellent soft magnetic properties and have been widely applied in high-frequency devices. CoFeB alloy is one of the most important amorphous magnetic materials and has been extensively applied in various spintronic devices. In this work, amorphous CoFeB magnetic thin films were prepared by using a method of oblique sputtering technique at room temperature. The influences of oblique sputtering on the stripe magnetic domain structure, the in-plane static magnetic anisotropy, the in-plane rotational magnetic anisotropy, and the perpendicular magnetic anisotropy of the amorphous CoFeB films were studied by scanning probe microscope, vibrating sample magnetometer, ferromagnetic resonance. It is found that the method of oblique sputtering could effectively reduce the critical thickness for the appearance of stripe magnetic domain in amorphous CoFeB films. For a non-oblique sputtered CoFeB film, the critical thickness for the appearance of the stripe magnetic domain is above 240 nm. In contrast, after been subjected to the oblique sputtering, the critical thickness becomes below 240 nm. The different magnetic characterizations indicate that for the growth of CoFeB films with stripe magnetic domain structure, the oblique sputtering could not only enhance the strength of in-plane static magnetic anisotropy, but also improve the in-plane rotational magnetic anisotropy and the perpendicular magnetic anisotropy. All of the magnetic anisotropies are increased with the angle of oblique sputtering. The observation results of XRD and TEM prove that the prepared CoFeB thin films tend to amorphous structure. The characterization of SEM observation indicates that although the amorphous CoFeB films do not possess long-range ordered crystalline structure, they still could form a kind of columnar structure. The slanted columnar structure of CoFeB films could significantly increase the perpendicular magnetic anisotropy, thus lead to the appearance of stripe magnetic domain structure.     

低温磁控溅射与普通多弧离子镀TiN薄膜的摩擦学性能比较

采用低温磁控溅射和普通多弧离子镀分别在冷作模具钢基体上制备了TiN薄膜，用纳米压痕法测量了薄膜的表面硬度，并比较了低温磁控溅射与普通多弧离子镀TiN薄膜的摩擦学性能。试验表明，低温磁控溅射TiN薄膜具有与普通多弧离子镀TiN薄膜相近的表面硬度，在多种试验条件下，低温磁控溅射TiN薄膜都有较好的摩擦学性能，摩擦副的磨损率低，摩擦因数小且变化平稳，磨损表面光滑。     

Effect of fabrication parameters on the microstructure,in-plane anisotropy and magnetostriction of Fe-Ga thin films

The microstructure,in-plane anisotropy,and magnetic properties of Fe-Ga thin films were investigated by X-ray diffraction analysis,vibrating sample magnetometer,and capacitive cantilever method.The in-plane induced anisotropy is well formed by the applied magnetic field during sputtering,and the anisotropy field Hk decreases with the sputtering power increasing.The coercivity of Fe-Ga thin films decreases with increasing power when the sputtering power is less than 60 W and increases when the power is larger than 60 W.The magnetostriction of the thin films reaches 66 × 10-6 at the sputtering power of 60 W.Excellent Fe-Ga films,which exhibit good field sensitivity,low coercivity and high magnetostriction,have been fabricated at the power of 60 W,and they can be used as the materials of magnetostrictive transducers.     

制备工艺对超磁致伸缩Fe-Ga合金薄膜表面形貌的影响

采用JZCK-600F型多功能镀膜设备制备了Fe-Ga合金薄膜,研究了溅射工艺对Fe-Ga合金薄膜沉积速率及表面形貌的影响。用SEM、EDS研究了Fe-Ga合金薄膜的表面形貌和薄膜成分。当其他工艺参数不变时,溅射时间、溅射功率是影响Fe-Ga合金薄膜的厚度和生长速率的主要因素。随溅射时间和功率的增加,薄膜厚度和沉积速率也随之增加,并且薄膜厚度与溅射时间和功率呈现出正比例关系;但是薄膜厚度过大,加大的内应力会使薄膜剥离。溅射功率过大时,内应力同样会使薄膜内部出现裂纹。所制备Fe-Ga合金薄膜的磁畴图像明暗对比明显。磁畴形状呈现不太规则的团圈状,类似珊瑚结构。薄膜的结晶化生长良好,薄膜形貌为较均匀致密的颗粒状结构。优化的薄膜溅射工艺参数为溅射功率80 W、溅射工作气压0.6 Pa、溅射时间60 min、Ar气工作流量25 mL/min。采用此优化工艺制备的Fe-Ga合金磁致伸缩薄膜悬臂梁偏移量为69.048 μm,可满足制备微器件所需性能。     

ZrN及其多层膜的性质和耐腐蚀性能

用磁过滤电弧制备了ZrN和ZrN／TiN多层膜，磁控溅射制备了ZrN薄膜。结果表明，ZrN／TiN多层膜，由于纳米多层化作用，硬度高于ZrN和TiN的26GPa和2lGPa，平均值达到34．5GPa。X射线衍射分析表明，ZrN／TiN多层膜由ZrN和TiN组成。过滤电弧制备的ZrN和ZrN／TiN多层膜的结合力为8lN和77N，磁控溅射制备的ZrN薄膜的结合力为26N。极化曲线的结果显示，过滤电弧制备的ZrN和ZrN／TiN多层膜的耐腐蚀性显著优于磁控溅射制备的ZrN薄膜，讨论了两种方法制备薄膜性能差异的原因。     

STRUCTURE AND FERROMAGNETIC RESONANCE OF Fe/Cu SUPERLATTICES

Metallic Fe/Cu superlattice films on glass substrates were prepared by a dc-magnetionsputtering system.The modulation behaviors and the crystal structures of the films were ex-amined by X-ray diffraction and transmission electron microscopy(TEM)respectively.Their magnetic properties were studied by means of ferromagnetic resonnance spectrometerand the vibrating sample magnetometer.The results show that there exists a strong magneticcoupling between the neighbouring Fe layers and it is the coupling that affectes the magneticproperties of these superlattice films.