共查询到19条相似文献,搜索用时 187 毫秒
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通过实验分析Na2SiO3和Na3PO4混合溶液对〈100〉晶向的单晶Si片的各向异性腐蚀过程,探讨了Na2SiO3溶液和Na2SiO3、Na3PO4混合溶液对表面织构化的影响机制,并且对制绒前Si片的电化学清洗过程和混合溶液的反应温度和反应时间等参数的变化对金字塔绒面微观形貌的影响做了分析。最终通过大量实验得到,用质量分数为4%的Na2SiO3和2%的Na3PO4混合溶液在78℃腐蚀60min,单晶Si片表面可获得最佳反射率为11.98%的减反射绒面。单晶Si片表面的反射率优于单独使用Na2SiO3溶液腐蚀,更重要的是制得了很好的均匀性表面。 相似文献
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多晶Si太阳电池新型制绒工艺研究 总被引:2,自引:0,他引:2
提出一种采用二次酸腐蚀的多晶Si制绒新方法,首先在HF/HNO3的富HNO3体系中对Si片进行一次腐蚀,之后在富HF体系中进行二次腐蚀,以优化表面织构,减少光在Si表面的反射损失。制绒后,用扫描电子显微镜(SEM)对Si片进行了表面形貌分析,用Carry 5000紫外-可见-近红外分光光度计测量反射谱线,得到未镀减反射膜(ARC)的二次腐蚀制绒的最低反射率为20.34%,比一次腐蚀制绒(22.70%)低2.36%。将二次腐蚀新工艺应用于太阳电池工业制备中,对电池输出参量进行检测分析。结果表明,经过二次腐蚀工艺处理的太阳电池开路电压(VOC)、短路电流(JSC)和效率η均比采用一次腐蚀工艺的太阳电池有不同程度的提高,制成的太阳电池最高效率为14.93%。 相似文献
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采用Ag离子辅助化学刻蚀法制备了多晶黑硅薄片,使用NaOH溶液处理多晶黑硅表面,增大其表面纳米孔直径,使SiNx薄膜能够均匀覆盖整个黑硅表面,提高黑硅的钝化效果,进而提高多晶黑硅电池光电转化效率.通过反射谱仪、扫描电子显微镜(SEM)、太阳电池测试系统等测试和表征不同扩孔时间对多晶黑硅各方面性能的影响.结果表明:未被NaOH扩孔处理的多晶黑硅的反射率最低,为5.03%,多晶黑硅太阳电池的光电转化效率为16.51%.当多晶黑硅被NaOH腐蚀40 s时,反射率为10.01%,电池的效率为18.00%,比普通多晶硅太阳电池的效率高2.19%,比未被扩孔处理的多晶黑硅太阳电池的效率高1.49%. 相似文献
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研究了GaAs/Si疏水性直接键合技术中GaAs表面化学活化关键工艺,对比分析了不同体积分数的HF和HCl溶液作为表面活性处理剂时对GaAs表面进行活化处理的结果。发现用HCl和H2O溶液处理GaAs晶片得到的表面均方根粗糙度要优于用HF处理得到的结果,并且将处理过的GaAs晶片与Si片进行直接键合,发现用HCl进行表面活化的GaAs晶片与Si片键合的成功率要高于用HF进行表面活化的GaAs和Si键合。在200,300和400℃条件下,采用HCl和H2O体积比为1∶10的溶液处理的GaAs晶片与Si片都成功键合,并且200℃条件下键合后的界面质量较好。 相似文献
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用于太阳能电池的多晶硅激光表面织构化研究 总被引:3,自引:0,他引:3
介绍了利用激光制备多晶硅表面织构的研究结果。采用激光在硅片表面刻蚀,然后利用化学方法去除残渣和损伤,制得均匀的表面陷光结构。通过扫描电子显微镜,HitachiU-4100分光光度计和Semilab WT2000少子寿命仪分析了表面织构化后硅片的表面形貌、反射率和少子寿命。通过调节激光和化学腐蚀参数得到很好的陷光效果,表面反射率最低可以降到约10%。但是激光刻蚀对硅片性能仍有一定损伤,有待改进。激光表面织构为多晶硅的减反射处理提供有效的途径。 相似文献
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《Electron Devices, IEEE Transactions on》1976,23(10):1195-1197
High-efficiency silicon solar cells have been reported that use a surface alteration to reduce reflection. The process here reported purposely alters the cell surface with an anistropic etching in ternary mixtures of KOH, H2 O, and ethyl glycol. Wafers were "sensitized" with a carbon compound to insure etching uniformity. It is suggested that the organic compound creates SiC nucleation sites, which in turn facilitates the formation of a tetrahedral structure on the cell surface. This structure promotes multiple interaction of the light beam between millions of pyramids per square centimeter on the surface. The surface geometry increases the light absorption and reduces reflectivity, thus increasing the cell efficiency. 相似文献
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Fatima Toor Jihun Oh Howard M. Branz 《Progress in Photovoltaics: Research and Applications》2015,23(10):1375-1380
We produce low‐reflectivity nanostructured ‘black’ silicon (bSi) using copper (Cu) nanoparticles as the catalyst for metal‐assisted etching and demonstrate a 17.0%‐efficient Cu‐etched bSi solar cell without any vacuum‐deposited anti‐reflection coating. The concentration ratio of HF to H2O2 in the etch solution provides control of the nanostructure morphology. The solar‐spectrum‐weighted average reflection (Rave) for bSi is as low as 3.1% on Cu‐etched planar samples; we achieve lower reflectivity by nanostructuring of micron‐scale pyramids. Successful Cu‐based anti‐reflection etching requires a concentration ratio [HF]/[H2O2] ≥ 3. Our 17.0%‐efficient Cu‐etched bSi photovoltaic cell with a pyramid‐texture has a Rave of 3% and an open circuit voltage (Voc) of 616 mV that might be further improved by reducing near‐surface phosphorus (P) densities. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献
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为了获得具有高质量光学表面的非球面碳化硅反射镜,需对碳化硅反射镜表面进行改性。介绍了离子束辅助沉积硅的碳化硅表面改性技术。对改性样片表面硅改性层的机械性能、光学加工性、表面粗糙度及反射率等特性进行研究。实验结果表明,碳化硅表面的硅改性层具有优良的机械性能和良好的光学加工性。光学抛光后,碳化硅表面硅改性层的表面粗糙度为0.85nm[均方根(RMS)值],在可见光波段反射率最高可达98.5%(镀银反射膜)。采用数控加工方法对口径为Ф600mm的表面改性离轴非球面碳化硅反射镜进行加工,最终反射镜面形精度的RMS值达到0.018λ(λ=0.6328μm),满足高精度空间非球面反射镜的技术指标要求。 相似文献
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N. A. Baidakova V. A. Verbus E. E. Morozova A. V. Novikov E. V. Skorohodov M. V. Shaleev D. V. Yurasov A. Hombe Y. Kurokawa N. Usami 《Semiconductors》2017,51(12):1542-1546
Dependences of the etch rates for KOH and HF:H2O2:CH3COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the structures with Ge(Si) self-assembled nanoislands. In the framework of the proposed approach the Ge(Si) nanoislands serve as a mask for selective etching of Si in a mixture of an aqueous solution of KOH with isopropyl alcohol, followed by the islands removal from the surface by the selective etching in HF:H2O2:CH3COOH. It was demonstrated experimentally that such approach allows to produce the submicron relief on a silicon surface, which leads to the significant decrease of the reflectivity in a wide spectral range. It is believed that the proposed method of surface relief formation can be used to improve the efficiency of the thin-film solar cells based on the crystalline silicon. 相似文献
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Etching was performed on(100) silicon wafers using silicon-dissolved tetramethylammonium hydroxide (TMAH) solutions without the addition of surfactant.Experiments were carried out in different TMAH concentrations at different temperatures for different etching times.The surface phenomena,etching rates,surface morphology and surface reflectance were analyzed.Experimental results show that the resulting surface covered with uniform pyramids can be realized with a small change in etching rates during the et... 相似文献
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A maskless etching technique that is useful for manufacturing solar cells and microelectronics was examined using surface discharge plasma operated at atmospheric pressure. In this study, in order to investigate the obvious etching characteristics of Si using surface discharge plasma, we observed the grooves obtained by etching Si substrates under He/CF4 and Ar/CF4 conditions. The etching rate using Ar was faster than when using He. Further, the choice of gas was found to influence the direction along which etching progressed. Based on the results, the characteristics and mechanisms of Si etching were discussed. 相似文献
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为了提高低浓度下四甲基氢氧化铵(TMAH)体硅刻蚀的质量,通过对质量分数为5%的TMAH进行研究,发现合适的过硫酸铵(AP)添加方式和添加量能够在不降低刻蚀速率的条件下提高体硅刻蚀质量。通过SEM,EDS和XRD对AP的作用机理进行深入分析,发现加入AP能使刻蚀底面生成"伪掩膜",并确定其成分为低温石英晶体。这些"伪掩膜"能够选择性地覆盖于刻蚀底面金字塔小丘的交界区域,使刻蚀底面相对凹陷的部分被保护,而金字塔顶相对凸出的部分则被刻蚀,从而在宏观上达到了降低粗糙度的效果。在此基础上得到了"两步法"的优化刻蚀工艺,结合该工艺已成功制备出深度485μm,平均刻蚀速率1.01μm/min,底面粗糙度仅为0.278μm硅杯微结构。 相似文献