电沉积CIGS薄膜太阳电池的研究进展及现状

CIGS薄膜太阳电池以其优异的光电性能倍受研究者关注。简要介绍了CIGS薄膜的结构及其优异性能,着重阐述了电化学沉积法制备CIGS薄膜的反应原理与目前国内外电沉积法制备CIGS薄膜太阳电池研究的最新进展,并展望了CIGS太阳电池发展所面临的难题及将来研究的方向。     

CIGS薄膜太阳能电池缓冲层材料的研究进展

CIGS薄膜太阳能电池的缓冲层为低带隙CIGS吸收层与高带隙ZnO窗口层之间形成过渡,减少两者带隙的晶格失配和带隙失调,并可防止溅射ZnO窗口层时给CIGS吸收层带来损害等,对提高CIGS薄膜太阳能电池效率起了重要作用.介绍了CIGS薄膜太阳能电池缓冲层材料的分类和制备工艺,主要阐述了CdS、ZnS及In2S3薄膜缓冲层材料及化学水浴法、原子层化学气相沉积法、金属化合物化学气相沉积法等制备工艺的研究现状,最后指出CIGS太阳能电池缓冲层在制备工艺、环境保护及大规模工业化生产中遇到的问题,并展望了其发展方向.     

CIGS薄膜太阳能光伏产业发展现状

Cu(In,Ga)Se2(CIGS)薄膜太阳能电池以其柔性、低成本、发电性能稳定等优势成为硅基光伏电池的最佳替代品。概述了CIGS薄膜电池特性,列举了国内外产业发展状况。同时对CIGS薄膜电池产业化存在的问题和未来研发方向做了简要的总结和预测。     

铜铟镓硒(CIGS)薄膜太阳能电池的研究进展

综述了CIGS薄膜太阳能电池近年来的研究进展。概述了CIGS薄膜的组织结构、性能特性及其之间的联系;介绍了CIGS薄膜吸收层的多种制备方法,如多元共蒸发法、溅射后硒化法、电沉积法、喷涂高温分解法等;概述了Na掺杂对CIGS电池性能的促进作用及其机理;总结了柔性衬底CIGS薄膜太阳能电池的研究情况;最后从理论和实验研究方面展望了CIGS薄膜太阳能电池的研究方向。     

脉冲激光沉积溅射工艺对CIGS薄膜成分和结构的影响

采用脉冲激光沉积溅射法在玻璃衬底上制备Cu-In-Ga预制膜,后经硒化、退火处理,得到CIGS薄膜。采用X射线衍射仪表征了薄膜的晶体结构,采用扫描电子显微镜和能量散射谱观察和分析了薄膜的表面形貌和元素成分,采用光电子能谱分析了薄膜表面的化学价态。结果表明,预制膜采用玻璃/In/Cu-Ga的叠层顺序且溅射脉冲数为In靶60000,Cu-Ga靶50000的溅射方式,可制备出沿(112)晶向择优生长的CIGS薄膜。     

CIGS薄膜太阳能电池吸收层制备工艺综述

CIGS薄膜太阳能电池具有高光吸收系数、高转化效率、高稳定性等优点,已经成为太阳能电池领域的研究热点。其小样品最高转化效率已达19.9%,可与多晶硅电池的转化效率(20.3%)媲美;其大面积电池组件转化效率一般在10%～15%范围内,根据各膜层材料组分及制备工艺的不同而有所变化。综述了CIGS薄膜太阳能电池吸收层的各种制备工艺及其产业化进程。     

电沉积制备CIS薄膜太阳能电池材料

电沉积法制备CIS薄膜因具有可实现大面积制备,成本低,制备效率高以及污染小等优点而得到了重点研究,是最有应用前途的薄膜太阳能电池材料之一.概述了电沉积制备CIS薄膜太阳能电池材料的原理、制备工艺,同时介绍了CuInSe2薄膜太阳能电池材料的发展概况.     

铜铟硒(CIS)薄膜太阳电池研究进展

介绍了CIS太阳能基本结构和特点，介绍了CIS电池的实验室和工业上的制备方法和工艺；着重阐述了CIS电池的研究历史和现阶段研究情况和性能，尤其说明了国外大公司和研究机构的研究情况，并对国内的研究情况做了简要介绍。     

CIGS薄膜太阳能电池研究现状及发展前景

CIGS薄膜太阳能电池具有优良的特性,而且其性能和品质还在不断的提高。一些技术发达的国家对CIGS 薄膜太阳能电池都投入巨资进行研究和开发。国内一些有资金实力的企业和一些有眼光的企业家对具有巨大商业和应用前景的CIGS高新技术产生了极大的兴趣,另外,从技术上、资源上和成本上来讲,我国发展CIGS 太阳能薄膜电池都是可行的。所以,应该考虑加大科研投入。     

氮气流量对CIGS薄膜结构和形貌的影响

采用中频交流磁控溅射方法,在Mo层上沉积了CuInGa(CIG)预制膜.以N2为载气,采用固态硒化法制备获得了Cu(In1-xGax)Se2(CIGS)吸收层薄膜,考察了N2流量对CIGS薄膜结构和形貌的影响.采用SEM和EDS观察和分析了薄膜的表面形貌和成分,采用XRD表征了薄膜的组织结构.结果表明,在不同的N2流量下制备的CIGS薄膜,均具有单一的黄铜矿相结构,薄膜具有(112)面的择优取向.当Ar流量为0.40m3/h时,薄膜表面结构致密,晶粒大小均匀,并且Cu、In、Ga原子含量,处于制备弱p型CIGS薄膜的理想范围.     

CIGS薄膜太阳能电池吸收层的非真空制备工艺研究进展

综述了CIGS薄膜非真空制备工艺的研究现状,主要包括电化学沉积法、纳米颗粒沉积法、化学反应法和其他方法,指出了其主要问题和发展方向.非真空制备工艺制备CIGS薄膜一般包括两个步骤:第一,利用各种非真空工艺制备出预制层薄膜;第二,对预制层进行退火处理结晶成CIGS薄膜.相对于真空制备工艺,非真空制备工艺制备CIGS薄膜可大大降低CIGS薄膜太阳能电池的生产成本,越来越多地受到研究者和厂商的关注.     

铜铟硒薄膜的外延生长和表面重构及其电池性能研究

在GaAs的(110)、(001)和(111)A、(111)B等极性晶面上, 通过铜铟共溅-硒蒸镀的方法, 分布外延生长出(220/204)、(001)和(112)结晶取向的单晶CIS薄膜. 系统考察了CIS薄膜外延生长的结晶取向和表面微结构, 发现了这些CIS外延薄膜均需表面重构化而形成比表面能低的CIS(112)晶面, 结合晶体结构研究了各种晶面和比表面能的相关性. 通过各种衬底下不同结晶取向的CIS薄膜的太阳能电池组装, 发现当CIS薄膜生长具有(220/204)结晶取向时电池器件性能最好、效率最高, 说明可通过控制CIS薄膜的沉积条件和选用合适取向的衬底, 增加吸收层(220/204)的结晶取向, 从而显著提高CIS薄膜太阳电池的光电性能.     

薄膜太阳电池的研发现状和产业发展

在人类社会可持续发展的进程中,必须解决好能源危机与环境保护等问题.在各国政府的大力扶持和相关鼓励政策的刺激和推动下,太阳能光伏产业得到了迅猛发展,光伏组件的成本不断降低,应用领域迅速扩大.其中,薄膜太阳电池由于其用料少、工艺简单、能耗低、成本有一定优势而越来越被业界所接受,近3年来薄膜太阳电池产业得到了较快发展,全球薄膜太阳电池产量从2007年的400 MW增长到2008年的890 MW,同比增长120%以上.目前已经能进行产业化大规模生产的薄膜电池主要有3种:硅基薄膜太阳电池、铜铟镓硒薄膜太阳电池(CIGS)和碲化镉薄膜太阳电池(CdTe).对上述3类薄膜太阳电池的特性、发展历史、研发现状以及产业发展状况作了介绍,对研究与产业中存在的问题以及未来研究方向也提出了看法.     

Manufacturing and application of CIS solar modules

The pilot production of Cu(In,Ga)Se₂ (CIS) modules at Würth Solar has progressed steadily, and the pilot line could be transferred successfully into a continuous operation reaching maximum capacity in 2005 of 1.5 MW_p. Best modules on the standard size of 60 cm × 120 cm reached 85 W_p, which corresponds to 13% aperture area efficiency. The average module efficiency has been steadily improved reaching values between 11% and 12% in the year 2005. The overall process yield of the pilot line could be increased and stabilised at high values well above 80%.In April 2005 the Würth Group has decided to invest in a new production line with a starting capacity of 15 MW_p/a. This capacity will be available at the end of 2006. The new building at the new location in Schwäbisch Hall/Germany will be ready in mid 2006.The long-time reliability of Würth Solar CIS modules could be proven by passing successfully the certified test according to EN61646 and by stable operation in the field for several years. Additionally, outdoor results with CIS modules in various applications show high energy ratings which are at least as good as the best c-Si systems. Furthermore, various CIS module types have been developed for building integration and other applications.     

Single-graded CIGS with narrow bandgap for tandem solar cells

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se₂ with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe₂ base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.     

CIGS电池、靶材及单靶溅射工艺研究进展

综述了蒸发法、溅射后硒化法、单靶直接溅射法制备CIGS光吸收层的工艺和电池性能,比较了它们的优缺点;详细介绍了粉末冶金参数(如烧结温度、压力、时间)对制备CIGS靶材致密度、成分均匀性的影响;着重阐述了单靶溅射工艺参数(如衬底温度、溅射功率、工作气压)对沉积的CIGS薄膜的相结构、形貌、光学及电学性能的影响。     

High voltage Cu(In,Ga)S2 solar modules

Sulfurcell (SC) has been running a pilot production for thin-film solar modules using CuInS₂-chalcopyrite (CIS) as absorber material since 2004. Since then production technology has been constantly improved with module power values exceeding 64 W, corresponding to an aperture area efficiency level of about 9%. Small area (0.5 cm2) cells cut out of such CIS modules reach maximum efficiencies close to 11%. Strong efforts have been made to develop a new sequential Cu(In,Ga)S₂ (CIGS) process suitable for production of large-scale CIGS solar modules thereby enabling module efficiencies above 10%. CIGS-based solar cells are—quite similar to CIS-based modules—prepared from sputtered metals subsequently sulfurized using rapid thermal processing in sulfur vapor. Such Cu(In,Ga)S₂ solar cells reach material record efficiencies about 13%. The cells are characterized by high open-circuit voltages up to 890 mV. Based on the results of the “Helmholtz Zentrum Berlin” (HZB), Sulfurcell has successfully scaled this process to our typical module size of 125 cm × 65 cm and is currently piloting the process for mass production. This paper will give an overview of electrical and structural parameters of world's first large-scale CIGS modules. CIGS module and cell parameters will be compared with standard CIS module and cell parameters and measured CIGS efficiency temperature coefficients will be compared with typical temperature coefficients of modules based on established PV technologies.