Precise wavelength control for DFB laser diodes by novel corrugation delineation method

Precise wavelength control of a multiple-wavelength DFB InGaAsP strained MQW laser-diode (LD) array was achieved using weighted-dose allocation variable-pitch EB-lithography (WAVE) and highly uniform MOVPE. Multiple-wavelength 1.3 /spl mu/m /spl lambda//4-shifted DFB LD arrays with wavelength spacing of 2.0 nm were successfully demonstrated. The standard deviation of the wavelength was as low as 0.37 nm over 2-in wafers.     

Monolithic oxide-confined multiple-wavelength vertical-cavitysurface-emitting laser arrays with a 57-nm wavelength grading rangeusing an oxidized upper Bragg mirror

Monolithic, oxide-confined, multiple-wavelength vertical-cavity surface-emitting laser arrays with a very large periodic, wavelength grading span of 57 nm (from 968 to 1025 nm) have been achieved under room temperature, continuous-wave operation, with threshold currents of 4.5 mA±1.5 mA. Almost linear wavelength grading is achieved by organometallic vapor phase epitaxial growth on a patterned substrate. An extended wavelength range is achieved by minimizing the optical loss dispersion by scaling the growth rate of all the epilayers and using a selectively-oxidized upper DBR mirror with a flattened optical reflectance spectrum, plus the higher differential optical gain provided by compressively-strained In_0.2Ga_0.8As-GaAs quantum wells     

Multiwavelength DFB laser array transmitters for ONTCreconfigurable optical network testbed

We discuss the design, fabrication, and performance of experimental multiwavelength laser array transmitters that have been used in the reconfigurable optical network testbed for the Optical Network Technology Consortium (ONTC). The experimental four-node multiwavelength network testbed is SONET/ATM compatible. It has employed multiwavelength DFB laser arrays with 4 nm wavelength spacing for the first time. The testbed has demonstrated that multiwavelength DFB laser arrays are indeed practical and reproducible. For the DFB laser arrays used in such a network the precise wavelength spacing in the array and the absolute wavelength control are the most challenging tasks. We have obtained wavelength accuracy better than ±0.35 nm for all lasers, with some registered to better than ±0.2 nm. We have also studied the array yield of our devices and used wavelength redundancy to improve the array yield. Coupling efficiencies between -2.1 to -4.5 dB for each wavelength channel have been obtained. It is achieved by using specially designed lensed fiber arrays placed on a silicon V-grooved substrate to exactly match the laser spacing. The transmitter consisted of a multichip module containing a DFB laser array, an eight-channel driver array based on GaAs IC's, and associated RF circuitry     

Wavelength accuracy and output power of multiwavelength DFB laser arrays with integrated star couplers and optical amplifiers

In this letter, we report the static performance of multiwavelength DFB laser arrays with integrated star couplers and optical amplifiers built for the reconfigurable optical network testbed. By the use of wavelength redundancy and proximity effect, wavelength deviations of /spl plusmn/0.2 nm or less from the designated eight-wavelength comb have been achieved with high yield. Simultaneous operation of eight wavelengths has also been demonstrated. In spite of the inherent splitting loss of 13 dB, high output powers of about -13 dBm and 0 dBm per wavelength have been measured into a single-mode fiber without and with on-chip optical amplification, respectively.     

量子密钥分发和经典光通信波分复用共纤传输研究

研究了量子密钥分发和经典光通信波分复用共纤传输的技术难点和可行性。基于系统重复频率 40 MHz的诱骗态相位编码BB84协议量子密钥分发设备,提出了3种量子信号与经典光信号的波分复用共纤传输方案：单纤双向CWDM共纤传输方案,复用1 550.12 nm波长量子信号、1 310 nm波长时钟信号以及正向1 590 nm波长100 Mbit/s速率光信号和反向1 610 nm波长100 Mbit/s速率光信号,光纤传输距离70 km下密钥成码率达到1.2 kbit/s;双纤双向CWDM共纤传输方案,复用1 550.12 nm波长量子信号、1 610 nm波长时钟信号以及1个波长的同向光信号在1 310 nm波长OOK光信号速率10 Gbit/s,光纤传输距离55 km下,密钥成码率达到1.58 kbit/s;双纤双向DWDM共纤传输方案,复用1 550.12 nm波长量子信号、1 610 nm波长时钟信号以及2个同向波长各自为1 551.72 nm和1 552.52 nm,并模拟100 Gbit/s相干光通信DP-QPSK信号接收功率,光纤传输距离70 km下,密钥成码率达到1.16 kbit/s。     

Fabrication method for multiple wavelength vertical-cavity emitterarrays by SiNx layer thickness control

We report very narrow and equally spaced eight-channel multiple-wavelength vertical-cavity emitter arrays emitting from 855 to 862 nm with the average spacing of 0.91 nm. For the postgrowth wavelength adjustment, a binary-coded multistep ion beam etching technique is applied to control the thickness of a SiN_x tuning layer located on the first Al_0.15Ga_0.85As quarter-wave layer above the active region. Our result indicates the possibility of the precisely spaced vertical-cavity surface-emitting laser arrays using this kind of postgrowth wavelength adjustment technique     

Fabrication of large-area nano-scale patterned sapphire substrate with laser interference lithography

Periodic triangle truncated pyramid arrays are successfully fabricated on the sapphire substrate by a low-cost and high-efficiency laser interference lithography（LIL）system.Through the combination of dry etching and wet etching techniques,the nano-scale patterned sapphire substrate（NPSS）with uniform size is prepared.The period of the patterns is 460 nm as designed to match the wavelength of blue light emitting diode（LED）.By improving the stability of the LIL system and optimizing the process parameters,well-defined triangle truncated pyramid arrays can be achieved on the sapphire substrate with diameter of 50.8 mm.The deviation of the bottom width of the triangle truncated pyramid arrays is 6.8%,which is close to the industrial production level of 3%.     

High-performance densely packed vertical-cavity photonic integratedemitter arrays for direct-coupled WDM applications

High-performance multiple-wavelength photonic integrated InGaAs-GaAs MQW DBR VCSEL laser emitter arrays with a manufacturable planar scheme are demonstrated for low-cost multimode wavelength-division-multiplexing (WDM) local-area networks. Each array consists of eight pie-shaped bottom-emitting vertical-cavity lasers (VCL's) enclosed within a 60-μm-diameter circle for direct-coupling into a single multimode fiber. The arrays exhibit a wide 32.9-nm lasing wavelength span and relatively high 7.3-mW single-channel output. In particular, we have achieved a differential efficiency as high as 50.2% and a maximum wall-plug efficiency of 11.8%. These devices operate with multilateral modes and have a wide 3-dB spectral bandwidth of 1.7 nm in average, which makes them especially suitable for multimode fiber systems     

Wavelength shift in vertical cavity laser arrays on a patternedsubstrate

The authors demonstrate a spatially chirped emission wavelength in vertical cavity surface emitting laser (VCSEL) arrays grown by molecular beam epitaxy. The wavelength shift is due to a lateral thickness variation in the Al_0.2Ga_0.8As cavity, which is induced by a substrate temperature profile during growth. A 20 nm shift in lasing wavelength is obtained in a VCSEL array     

Control of Bragg grating resonant wavelength through its dependenceon the effective index of a waveguide

Fabrication tolerances for control of the Bragg wavelength of gratings in waveguides are studied. Techniques are demonstrated to hold the period of the grating constant to ±0.04 nm over the majority of the exposed wafer area, and ridge waveguides fabricated with standard thin film process equipment are found to have Bragg wavelengths constant to within ±0.2 nm. Additionally, adjacent ridges with differing widths are written in a single photomask/etch process step and found to controllably shift the Bragg wavelength over a 10-20-nm band suitable for a distributed Bragg reflector (DBR) laser array or a monolithic comb filter for wavelength division multiplexing (WDM) filtering/routing arrays     

Simple multiwavelength device fabrication technique using a single-grating holographic exposure

A simple technique, using a single-grating holographic exposure associated with localized selective etching steps, has been developed for multiwavelength device fabrication. Four-wavelength DBR laser arrays with a 5 nm Bragg wavelength spacing have been fabricated for wavelength division multiplexing (WDM) applications with this method. These devices exhibit uniformly low-threshold currents (10-15 mA), high-output powers (15 mW) and wide tunabilities (12 nm), leading to an overall accessible wavelength domain of 28 nm for the array.     

基于光纤光栅器件的聚合物微环传感信号解调

基于啁啾光纤光栅和长周期光栅,文章提出一种应用于聚合物微环传感器和微环传感器阵列的信号解调方法.通过调整长周期光栅的峰值波长来匹配感测范围,从而实现线性边沿滤波.该系统由全光纤器件组成,这种解调可以达到31 pm的高分辨率.双通道系统中,每个通道的波长带宽为2.4 nm.     

Resonant cavity-enhanced InGaAs-AlGaAs heterojunctionphototransistors with an optical design for high uniformity and yield

We present uniformity data on resonant cavity-enhanced InGaAs-AlGaAs heterojunction phototransistors (HPT's) with an optical design that promotes high uniformity and yield. The HPT's operate in the wavelength region where the GaAs substrate is transparent and the data show the HPT's to be suitable for vertical integration with optical emitters or modulators to form two-dimensional arrays of smart pixels operating in transmission mode. The absorbing region of the HPT consists of an InGaAs multiple-quantum-well structure where the quantum wells (QW's) have been distributed to make the total absorption in the cavity insensitive to growth variations as well as the spatial matching of the standing wave and absorbing QW's. Theoretically, we estimate the absorption to be 39%±1% of the incident optical power, even at wafer nonuniformities of 12.5%. With these nonuniformities, the resonant wavelength moves ±25 nm, making postgrowth tuning of the wavelength necessary. Experimentally, we show postgrowth tuning of the resonance wavelength without loss in uniformity. The arrays have good uniformity as well as very high responsivities. The average responsivity is 160 A/W ±15% from 927-955 nm. The standard deviation of a typical array is 0.5 nm in resonant wavelength and about 5% of the average responsivity. The difference between maximum and minimum values for an array is typically 3 nm in resonant wavelength and ±10% of the average responsivity     

Broad-band wavelength-tunable, single frequency, and single polarization bismuth oxide-based erbium-doped fiber laser

We demonstrate a broad-band wavelength-tunable Bismuth Oxide-based Erbium-doped fiber (Bi-EDF) laser covering both the conventional wavelength band and the long wavelength band. It features single frequency and single polarization oscillation; the former is obtained by making the cavity length short and incorporating an intracavity narrow-band fiber Fabry-Pe/spl acute/rot filter, and the latter is achieved with a sigma laser configuration using nonpolarization maintaining fibers. Tuning over 90 nm (1520-1610 nm) is achieved by utilizing the broad gain bandwidth of Bi-EDF amplifier.     

Oxide-confined monolithic, multiple-wavelength vertical-cavitysurface-emitting laser arrays with a 40-nm wavelength span

Monolithic, multiple-wavelength, vertical-cavity surface-emitting laser arrays grown by controlling the metal-organic chemical vapor deposition epitaxial growth rate on a patterned substrate, and using selective oxidation for current confinement, have been demonstrated with a periodic, graded wavelength span of 40 nm, Near room-temperature, electrically pumped continuous-wave lasing is achieved over the entire 40-nm range, with uniform threshold currents of 4.5 mA±1.0 mA, and with output powers ranging from 0.4-1.3 mW     

KrCl、XeCl准分子激光双振荡研究

采用Kr:Xe:HCl:He混合气体在同一个放电脉冲中获得了KrCl、XeCl激光双振荡,KrCl激光较XeCl激光早出现～12ns.在双振荡中Xe的分压强是很灵敏的.     

半导体激光抽运源大通道水冷热沉的接口设计

针对普通大功率半导体激光抽运源用大通道水冷热沉热阻高、工作时热沉表面在大通道水流方向存在明显温升进而导致加载其上的激光bar寿命不一致以及抽运源整体光谱宽度难以控制的问题,利用商用有限元软件ANSYS仿真获得抽运源工作时不同冷却水流量条件下热沉内部温度场分布,分析该结构热沉热阻系统的构成及整体热阻瓶颈所在。实际中通过改变冷却水接口结构,获得“入口效应”,提高了大通道热沉整体换热性能,进一步减小热沉表面温度梯度。利用所设计的新接口大通道水冷热沉获得3 bar线阵120 W连续(CW)输出半导体激光器抽运源,输出中心波长为807.7 nm,光谱宽度(FWHM)为2.8 nm。     

Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix

The optical properties of metal-semiconductor metamaterials based on an AlGaAs matrix are studied. The specific feature of these materials is that there are As and AsSb nanoinclusion arrays which modify the dielectric properties of the material. These nanoinclusions are randomly arranged in the medium or form a Bragg structure with a reflectance peak at a wavelength close to 750 nm, corresponding to the transparency region of the matrix. The reflectance spectra are studied for s- and p-polarized light at different angles of incidence. It is shown that (i) As nanoinclusion arrays only slightly influence the optical properties of the medium in the wavelength range 700–900 nm, (ii) chaotic AsSb nanoinclusion arrays cause strong scattering of light, and (iii) the spatial periodicity in the arrangement of AsSb nanoinclusions is responsible for Bragg resonance in the optical reflection.     

Erbium-doped optical fiber amplifiers pumped in the 660- and 820-nmbands

State-of-the-art erbium (Er)-doped optical fiber amplifiers (EDFA's) pumped in the 660- and 820-nm bands are described. We have demonstrated highly efficient EDFA's incorporating optimized 664- and 827-nm pump wavelengths and an Er-doped high numerical aperture (NA) fiber with thermally diffused expanded core (TEC) fiber ends. Gain coefficients of 3.8 and 1.3 dB/mW at respective wavelengths of 664 and 827 nm were achieved at a signal wavelength of 1535 nm. Noise figures of 3.1 and 4.1 dB at respective pump wavelengths of 670 and 827 nm were obtained at a signal wavelength of 1535 nm. A highly efficient Er-doped fiber amplifier module, in which an AlGaInP visible laser diode (LD) was used as the pump source, was successfully developed as a practical application of this technology. A maximum overall gain coefficient of 3.0 dB/mW was achieved at a signal wavelength of 1535 nm. The EDFA module realized a maximum overall signal gain of 33 dB at 1535 nm with a saturated output power of -1 dBm. A maximum saturated output power of 3.9 dBm was obtained at a signal wavelength of 1552 nm. The present EDFA design using a low-cost laser diode for optical disk memory use and a high NA Er-doped fiber has great potential for providing inexpensive, high-performance EDFA's     

Wavelength-graded horizontal cavity laser array with postgrowthadjustment of wavelength

Wavelength-graded emission from a visible red GaInP-AlGaInP laser diode array has been achieved with the contradirectional surface-mode coupling technique. The wavelength control is attained by postgrowth adjustment of the thickness of the surface waveguide. The horizontal cavity lasers show both edge and surface emission (beam divergence 0.12°). The thermal red-shift of the wavelength is 0.028±0.002 nm/K. They show single-mode emission with a typical spectral linewidth of 0.09 nm and a sidemode suppression ratio up to 29 dB. The wavelength spacing between the individual lasers is 0.76±0.08 nm yielding a total range across the array of 5.4 nm (from 681.5 to 686.9 nm)