Improvement on Frequency Performance of SOI SiGe HBT

Based on the advantages of SOI technology, the frequency performance of SiGe HBT with SOI structure has been simulated. Compared with bulk SiGe HBT, the results show that the buried oxide layer （BOX） can reduce collector-base capacitance CCB with the maximum value 89.3%, substrate-base capacitance CSB with 94. 6%, and the maximum oscillation frequency is improved by 2.7. The SOl structure improves the frequency performance of SiGe HBT, which is adaptable to high-speed and high power applications.     

基于SOI结构的SiGe HBT频率特性研究

基于SOI技术原理,模拟仿真了SOI结构SiGe HBT的频率特性,并与相同条件下体SiGe HBT频率特性进行了比较分析。仿真结果显示,SOI结构中埋氧层BOX的引入,可使SOI结构SiGe HBT集电极-基极电容Ccb和衬底-基极电容Csb最大降幅分别达94.7%和94.6%,且最高振荡频率fmax增加2.7倍。研究结果表明,SOI结构大幅度改善了SiGe HBT的频率性能,适用于高速、高功率集成电路技术。     

A base transport model for ultra-thin-base SiGe HBT

The characteristics of parameters such as carrier temperature and diffusion coefficient in ultra-thin-base SiGe heterojunction bipolar transistors (HBTs) are analysed according to the solution of the Boltzmann equation; a new model of base transport in SiGe HBTs, different from traditional ones is described.     

Analytical current-voltage relations for compact SiGe HBT models.I. The “idealized” HBT

Based on the generalized integral charge control relation (GICCR), analytical current-voltage relations for “true” SiGe heterojunction bipolar transistors (HBTs) are derived, which are well suited for compact physically based transistor models. For this, the weighted minority charge in the collector, which proved to be of dominating influence at high current densities, is calculated from simple physical expressions. They contain the operating point as well as physical and technological parameters. The model equations, which serve as a basis for a new physically based compact SiGe HBT model called SIGEM, are verified up to high current densities by numerical device simulations. It is shown that not only the static behavior but also the small-signal parameters y₂₁ and y₂₂, which are more sensitive to potential model errors, are well described even far within the high-current region. In this first part of the paper, the work is restricted to HBTs with idealized and simplified doping profile. In the second part [2] it is shown how these equations can also he applied to HBTs with modified, more practical doping profiles and how the model parameters can be extracted     

A SiGe HBT Translinear Harmonic Mixer

A novel even-order harmonic mixer is proposed. Based on the translinear loop of BJT/HBTs, frequency doubling and single-to-differential conversion circuits have been employed in the design of harmonic mixer. The proposed mixer has been verified in a SiGe HBT process by SpectreRF simulations.     

SiGe HBT基区渡越时间研究

对基于SiGe HBT基区本征载流子浓度和电子迁移率依赖于掺杂、基区Ge组分分布和速度饱和效应的基区渡越时间进行了研究。结果表明,相同Ge组分条件下,基区渡越时间bτ随WB由100 nm减薄到50 nm,降低了74.9%;相同WB,Ge组分为0.15比0.1 Ge组分的bτ减小了33.7%。该研究与其他文献的结果相吻合,可为SiGe HBT基区设计提供一定的理论指导。     

一种高电流增益的SiGe HBT的研制

研制了一种平面集成多晶发射极SiGe HBT。经测量,在室温下电流增益β大于1500,最大达到2800,其Vceo为5V,厄利（Early）电压VA大于10V,βVh乘积达到15000以上。这种器件对多晶硅发射极砷杂质浓度分布十分敏感。     

SiGe HBT技术进展

首先论述了 Si Ge技术的优势、发展历史和应用领域 ,并介绍了 Si Ge工艺和器件的进展 ,最后详细描述了 Si Ge IC的进展     

SiGe HBT高频噪声等效模型研究

对硅锗异质结双极型晶体管（SiGe HBT）等效高频噪声模型进行了研究,在建模过程中,SiGe HBT的等效电路为小信号准静态等效电路,使用二端口网络噪声相关矩阵技术从实测噪声参数提取基极和发射极的散粒噪声,提取结果与几种散粒噪声模型进行对比分析,重点研究半经验模型建立过程,对半经验模型与常用的噪声模型使用CAD仿真验证,结果表明了半经验模型的有效性、更具准确性,该半经验模型能够用到不同工艺SiGe HBT的高频噪声模拟。     

一种新型双多晶自对准结构的高压功率SiGe HBT

为了改善高压功率SiGe HBT的综合性能,应用图形外延SiGe工艺,研制出了一种新型的双多晶自对准SiGe HBT器件.相对于双台面结构的SiGe HBT而言,该结构的SiGe HBT在发射极总周长不变的情况下,其发射结面积减少超过50%,集电结面积减少近70%,BVCBO也提高了近28%.经测试,器件的结漏电和直流增益等参数均符合设计要求.     

2D-simulation and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI

We report a novel BiCMOS compatible lateral SiC N-emitter, SiGe P-base Schottky metal-collector NPM HBT on SOI. The proposed lateral NPM HBT performance has been evaluated in detail using 2-dimensional device simulation by comparing it with the equivalent NPN HBT and homojunction silicon NPM BJT structures. Based on our simulation results, it is observed that while both the lateral NPM and NPN HBTs exhibit high current gain, high cut-off frequency compared to the homojunction NPN BJT, the lateral NPM HBT has the additional benefit of suppressed Kirk effect and excellent transient response over its counterpart lateral NPN HBT. The improved performance of the proposed NPM HBT is discussed in detail and a CMOS compatible process is suggested for its fabrication.     

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating temperature. To the authors' knowledge, these SiGe LNAs exhibit the lowest broadband noise of any Si-based LNA reported to date.     

A 2.7-V SiGe HBT variable gain amplifier for CDMA applications

A monolithic SiGe HBT variable gain amplifier with high dB-linear gain control and high linearity has been developed for CDMA applications. The VGA achieves a 30-dB dynamic gain control with a control range of 0-2.7 Vdc in 824-849 MHz band. The maximum gain and attenuation are 23 dB and 7 dB, respectively. Input/output VSWRs keep low and constant despite change in the gain-control voltage. At a low operation voltage of 2.7 V, the VGA produces a 1-dB compression output power of 13 dBm and /spl plusmn/885-kHz ACPR of -57 dBc at a 5-dBm output power.     

应用于射频前端的高Q值SiGe HBT有源电感

针对传统的共基-共射(CB-CE)回转器有源电感的品质因子Q值低等缺点,应用Cascode结构把CB-CE有源电感改进为共基-共射-共基(CB-CE-CB)有源电感,推导出等效电路及等效阻抗表达式。最后基于Jazz 0.35μm SiGe BiCMOS工艺,利用ADS软件完成电路设计与仿真,应用Cadence Virtuoso平台完成版图设计。改进之后的有源电感,通过改变外加偏置条件,实现了电感值和品质因子Q值的可调,电感值可调范围为0.35～2.72 nH,Q值最大值可达1 172,版图面积仅为51μm×35μm。该有源电感应用于射频电路中,可取代无源电感。与无源电感相比,品质因子Q值明显提高,版图面积大大减小,更利于集成。     

A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications

The linearity of a silicon-germanium (SiGe) HBT power amplifier (PA) is analyzed with the help of a power-dependent coefficient Volterra technique. The effect of emitter inductance is included and the dominant sources of nonlinearity are identified. A dynamic current biasing technique is developed to improve the average power efficiency for wide-band code-division multiple-access (WCDMA) PAs. The average power efficiency is improved by more than a factor of two compared to a typical class-AB operation, while the power gain keeps roughly constant. The measured adjacent channel power ratio with 5and 10-MHz offsets at 23.9-dBm average channel output power are -33 and -58.8 dBc, respectively, and satisfies the Third-generation partnership project WCDMA specifications. The output power at the 1-dB compression point is 25.9 dBm     

SiGe BiCMOS工艺中HBT的关键制造工艺研究

研究了0.18 μm SiGe BiCMOS中的核心器件SiGe HBT的关键制造工艺,包括集电极的形成、SiGe基区的淀积、发射极窗口的形成、发射极多晶的淀积、深孔刻蚀等,指出了这些制造工艺的难点和问题,提出了解决办法,并报导了解决相关难题的实验结果.     

Ultrahigh-performance 8-GHz SiGe power HBT

This letter has demonstrated the state-of-the-art SiGe power heterojunction bipolar transistors (HBTs) operating at 8 GHz. In a common-base configuration, a continuous wave output power of 27.72 dBm with a concurrent power gain of 12.19 dB was measured at a peak power-added efficiency of 60.6% from a single SiGe HBT with a 3-/spl mu/m emitter finger stripe width and a 1340 /spl mu/m/sup 2/ total emitter area. The highest power-performance figure of merit (FOM) of 3.8/spl times/10/sup 5/ mW/spl middot/GHz/sup 2/ achieved from the device was resulted from using an optimized SiGe heterostructure and a compact device layout, which is made possible with a heavily doped base region.     

一种具有高电流增益的平面集成SiGe HBT

研制了一种平面集成多晶发射极SiGe HBT。经测量,在室温下电流增益β大于1 500,最大达到2 800,其Vceo为5 V,厄利(Early)电压VA大于10 V,βVA乘积达到15 000以上。这种器件对多晶硅发射极砷杂质浓度分布十分敏感。