Influence of arsenic overpressure on Light-Output and degradation behavior of GaAsP: Se Led’s

GaAsP: Se LED’s exhibit low quantum efficiencies if diffused under high arsenic overpressure. A high arsenic pressure during the diffusion process on the other hand results in small rates of initial degradation. If GaAsP: Se LED’s are annealed at 600° C under arsenic overpressure their light-output decreases substantially depending on the selenium doping concentration. A similiar dependence on the selenium doping concentration was observed for the process of light-output degradation in GaAsP: Se LED’s. It is proposed that gallium-vacancy selenium complexes are responsible for the observed phenomena.     

First direct observation of EL2-like defect levels in annealed LT-GaAS

Nonstoichiometric arsenic-rich GaAs grown at low temperatures by molecular beam epitaxy (LT-GaAs) has been found to be semi-insulating after high-temperature annealing. The origin of this technologically important conversion is not yet fully understood. In order to study this effect, we performed photocurrent measurements on p-LT GaAs-n diodes in the spectral range between 0.75 and 1.5eV at 8K. The photocurrent spectra revealed the following features which are unique to the EL2 level: photoquenching, characteristic photoionization transitions to conduction band minima and a presence of a broad band due to the effect of auto-ionization from the excited state. Moreover, modeling of the optical excitation process using realistic band structure demonstrates that these features cannot be explained by “internal photoemission” originating from As precipitates, as the “buried Schottky barrier model” predicts. This is the first direct experimental evidence for the existence of EL2-like defect levels and their importance for understanding the optical and electronic properties of annealed LT-GaAs.     

1990 Electronic Materials Conference

Silicon doped epitaxial layers of InP have been prepared by low pressure metalorganic chemical vapour deposition, using disilane as the source of silicon. Trimethylindium and phosphine were used as the source reactants for the growth. The doping characteristics for the epitaxial growth were investigated at substrate temperatures in the range 525–750° C and for doping levels in the range 4 × 10¹⁶−2 × 10¹⁹ cm⁻³. The results indicated that the Si doping level is proportional to the disilane flow rate. The Si incorporation rate increases with temperature, but becomes temperature-independent forT > 620° C. Comparison between Si concentrations determined by Secondary Ion Mass Spectroscopy, donor levels determined by Hall effect measurements, and optical measurements at 7 K indicates that approximately 50% of the Si in the InP is in the form of electrically inactive species. Uniform doping over 5 cm wafer dimensions has been obtained for growth atT = 625° C.     

Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers

Radiative characteristics of semiconductor stripe-contact lasers operating under quenching conditions of Fabry-Perot-mode lasing are studied. It is found that reversible turning off of Fabry-Perot-mode lasing is caused by switching to closed-mode lasing. Radiative characteristics of the closed mode are controlled by the mode structure with the close-to-zero loss for radiation output, which covers the entire crystal. The main threshold conditions of closed-mode lasing are a decrease in interband absorption in the passive region and an increase in the modal gain of the closed-mode lasing line. It is shown that a decrease in interband absorption in the passive region can be provided by both spontaneous emission from the injection region and lasing-mode photons. An increase in the modal gain of the closed-mode lasing line is provided by shifting the energy minima of the conduction band and maxima of the valence band of the injection region with respect to the energy bands of the passive region.     

Influence of high substrate doping levels on the threshold voltageand the mobility of deep-submicrometer MOSFETs

The high levels of substrate doping needed in deep-submicrometer MOS devices affect device properties strongly. The authors present a detailed experimental study of high-doping effects on the threshold voltage, which is shown to be affected by the quantum-mechanical splitting of the energy levels in the conduction band. A simple expression to account for these effects is proposed and the consequences for device scaling and design are discussed. Furthermore, the increasing levels of substrate doping and high normal electric fields affect the channel mobility through Coulomb and surface-roughness scattering. Several empirical models for the surface mobility are compared with the characteristics of experimental devices     

Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE

Oxygen related defects in Al-containing materials have been determined to degrade luminescence efficiency and reduce carrier lifetime and affect the performance of light emitting diodes and laser diodes utilizing these materials. We have used the;metal-organic source diethylaluminum ethoxide (DEAlO) to intentionally incorporate oxygen-related defects during growth of Al_0.5In_0.5P by metal-organic vapor phase epitaxy (MOVPE). The incorporated oxygen forms several energy levels in the bandgap with energies of 0.62 eV to 0.89 eV below the conduction band detected using deep level transient spectroscopy. Secondary ion mass spectroscopy measurements of the total oxygen concentration in the layers shows a direct correlation to the measured trap concentrations. Several other energy levels are detected that are not correlated with the oxygen content of the film. The possible origin of these additional levels is discussed.     

Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure

Using contactless electroreflectance (CER) and piezoreflectance at 300 K we have characterized a GaAs/GaAs_1?xP_x multiple quantum well (MQW) structure, “GaAs” (nominal) and GaAsP epilayers grown by chloride transport chemical vapor deposition on GaAs (001) substrates. From a detailed lineshape fit to the CER data from the epilayers we have determined the energies of the fundamental band gap and hence the phosphorous composition. The nominal “GaAs” epilayers were found to have phosphorous compositions of about 2.5–3.2%, a result of the phosphorous diffusion between growth chambers in the reactor. The GaAs_1?xP_x epilayer had x=0.29. For the GaAs_0.97P_0.03/GaAs_0.71P_0.29MQW comparison between the experimentally observed energies of a number of quantum transitions with a theoretical envelope function calculation, including the effects of strain in the barriers, made it possible to evaluate the unstrained conduction band offset parameter Q_c=0.50±0.05. Our value for this parameter is discussed in relation to other works. Atomic force microscopy was employed to investigate the surface morphology of the 230 Å GaAsP top layer of the MQW in addition to a 2000 Å GaAsP epilayer. From the absence of any cross-hatch pattern associated with misfit dislocations on the former we concluded that the GaAsP in the MQW is pseudomorphic. On the other hand the 2000 Å epilayer exhibited signs of strain relaxation.     

Determination of deep levels in semiconductors from C-V measurements

A method is presented that allows deep level density and energy of impurities in semiconductors to be routinely determined from simpleC-Vmeasurements of Schottky barriers. The method is particularly useful for material having levels with very long time constants that are not accessible by noise spectra measurements. The technique is illustrated by measurements of epitaxial n-GaAs which show a donor level at 0.83 eV below the conduction band.     

Theoretical study on enhanced differential gain and extremelyreduced linewidth enhancement factor in quantum-well lasers

Low-chirp lasing operation in semiconductor lasers is addressed in a theoretical investigation of the possibility of reducing the linewidth enhancement factor (α factor) in quantum-well (QW) lasers to zero. It is shown that in reducing the α factor it is essential that lasing oscillation be around the peak of the differential gain spectrum, not in the vicinity of the gain peak. The condition for such lasing oscillation is analytically derived. The wavelength dependence of the material gain, the differential gain, and the α factor are calculated in detail taking into account the effects of compressive strain and band mixing on the valence subband structure. The effect of p-type modulation doping in compressively strained QWs is discussed. It is shown that the α factor, the anomalous dispersion part in the spectrum, crosses zero in the region of positive material gain, which makes is possible to attain virtual chirpless operation by detuning     

Reflectivity dependence of the lasing photon energy in GaAs junction lasers at 77°K

The reflectivity dependence, of the lasing photon energy in GaAs junction lasers at 77° K is studied. It is found that the lasing photon energy decreases with increasing values of the laser reflectivity.     

Gallium-induced deep level in Pb1−x GexTe alloys

Galvanomagnetic properties of gallium-doped Pb_1?x Ge_xTe (0.04≤x≤0.08) alloys were studied. It is shown that gallium doping induces a deep impurity level in the alloy band gap; the energy position of this level depends on the germanium content in the alloy. A model assuming that doping with gallium results in the emergence of two defect levels in the energy spectrum of the alloys is proposed.     

Thermoelectric Properties and Electronic Structure of Bi- and Ag-Doped Mg<Subscript>2</Subscript>Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> Compounds

Mg₂Si_1−x Ge _x compounds were prepared from pure elements by melting in tantalum crucibles. The reaction was conducted under an inert gas in a special laboratory setup. Samples for thermoelectric measurements were formed by hot pressing. Structure and phase composition of the obtained materials were investigated by x-ray diffraction (XRD). Morphology and chemical composition were examined by scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS), respectively. Thermoelectric properties, i.e., the Seebeck coefficient, the electrical conductivity, and the thermal conductivity, were measured in the temperature range of 500 K to 900 K. The effect of Bi and Ag doping on the thermoelectric performance of Mg-Si-Ge ternary compounds was investigated. The electronic structures of binary compounds were calculated using the Korringa–Kohn–Rostoker (KKR) method. The effects of disorder, including Ge substitution and Bi or Ag doping, were accounted for in the KKR method with coherent potential approximation calculations. The thermoelectric properties of doped Mg₂Si_1−x Ge _x are discussed with reference to computed density of states as well as the complex energy band structure.     

Effects of Zn-vapor heat treatments on the edge emission and deep-center luminescence of ZnTe

Using cathodoluminescence measurements at 80–300K, we have investigated the effects of Zn-vapor heat treatments on the injection level dependence, frequency response, and temperature dependence of the edge emission and the extrinsic deepcenter luminescence of vapor-phase-grown ZnTe. The results are compared to those from the same material in its as-grown condition. Zn-vapor heat treatments greatly enhance the 1.8 eV deep-center band and make it the dominant spectral feature at all temperatures investigated. The resulting band shows little change in shape or energy with injection level, and the temperature dependence of the band does not suggest thermal exchange between a participating energy level and a band edge. While the energy of the 1.8 eV band does decrease with increasing temperature, it does not match the variation of the band gap with temperature. It is found that the 1.8 eV band broadens with increasing temperature in a way satisfactorily explained by configurationcoordinate modeling. The kinetics of the 1.8 eV band show complex detail, both at 80K and 300K, but microsecond-magnitude exponential components are dominant. In contrast, the kinetics of the edge emission are much faster. However, despite the difference in kinetics, the intensities of the 1.8 eV band and the edge emission at 80K scale closely with each other over a wide range of injection levels. This remarkable result indicates that the edge emission and deep-center luminescence processes do not involve independent competition for injected carriers in Zn-fired ZnTe.     

Optical properties of photochromatic sulfur-doped chlorosodalite

Synthetic.photochromic sulfo-chlorosodalite, 6(NaAlSiO₄) ·2 NaCl(S), has been thoroughly investigated by measurements of optical absorption, photo-luminescence and cathodoluminescence. Depending on the sulfur ion form and concentration, the doped sodalite exhibits either sensitive tene-brescence or photoluminescence with long wavelength UV excitation. The photo-induced color absorption peaks at 5260A at 300°K with absorption coefficient, Δα_max >200 cm⁻¹ . This is by far the highest photo-induced absorption observed for synthetic chlorosodalite. At 80°K, the peak position of the absorption does not show significant shift within instrumental accuracy. In photoluminescence, the emission spectra as well as the excitation spectra are studied at both 300 and 78°K. Four characteristic spectral bands (IR, blue, red, and a band with oscillation in wavelength) are observed. The oscillatory S₂ ^- ion emission band starting about 2.35 eV and extending to lower energy and the IR band peaked at 1.4 eV are most efficiently excited by 3660A (3.4 eV), whereas the blue luminescence peaked at 2.7 eV has an excitation threshold of 3.9 eV. The red band is often masked by the oscillatory band and can be observed by higher energy excitation. The red and blue bands are also observable in the cathodoluminescence measurements of the sulfur-doped samples but not the undoped samples. Correlating the absorption, luminescence, and excitation spectral results, a quantitative model is derived to interpret the nature and the role of sulfur ions in the photochromic chlorosodalite material.     

掺镱光纤激光器温度特性分析

温度对于光纤激光器的影响是多方面的,着重对光纤吸收截面、发射截面及激光器激射波长的温度特性进行了深入的研究,更加精确、全面地描述温度对光纤激光器系统的影响。当温度变化时,掺镱光纤各子能级上的粒子数分布发生变化,从而导致相应的吸收截面和发射截面发生变化。通过拟合方法可以得到光纤吸收截面与温度的关系。并利用任意温度下,吸收截面与发射截面的特定关系式,得到发射截面在各温度点上的取值。进一步推导出了激射波长与工作温度、光纤长度、腔的损耗、掺杂浓度等系统参数的关系;并将不同工作温度下激射波长的计算结果与实验结果比较,得到两种方法下的相似结论。     

Spectroscopy of impurity levels by measuring the microplasma turn on probabilities in GaP/Zn,O/diodes

The modifying effects of the avalanche breakdown on the space charge density of the depletion layer of GaP/Zn,O/p-n junctions have been studied by the double square pulsed method. The thermal-emission time constant of the impurity levels may be determined from measurements of the microplasma turn-on probability vs the time interval between the two pulses. By making these measurements at various temperatures, one can find the activation energy and also the thermal-capture cross-section of the impurity levels. The analysis of the breakdown-voltage variation with time and temperature permits one to draw conclusions about the type of the individual levels (minority or majority-carrier trap) and also about the impurity impact ionization. Five impurity centers were identified in the temperature interval 77–140°K; among them two centers which might be responsible for the anomalous short minority carrier lifetime, i.e., the low quantum efficiency of the red GaP lamps.     

InAs/GaAs自组织量子点激发态的激射

将覆盖层引入生长停顿的量子点结构作为激光器有源区来研究量子点激光器受激发射机制 .由于强烈的能带填充效应 ,光致发光谱和电致发光谱中观察到对应于量子点激发态跃迁的谱峰 ,大激发时其强度超过基态跃迁对应的谱峰 .最后激发态跃迁达到阈值条件 ,激射能量比结构相似但不含量子点的激光器低 ,表明量子点激光器中首先实现受激发射是量子点的激发态     

染料掺杂胆甾相液晶激光器的特性研究

研制了染料掺杂胆甾相液晶激光器,测试分析了器件激光输出特性。将激光染料DCM、手性剂S-811、液晶TEB30A按一定比例混合,注入摩擦取向的液晶盒中,形成平面态排列的胆甾相液晶激光器件。利用532 nm波段的Nd:YAG脉冲倍频激光泵浦液晶器件,获得了禁带边沿激光输出,测量分析了激光能量阈值特性与激光光斑能量分布特点。液晶激光器在光子禁带边沿607 nm和680 nm处获得激光输出,线宽小于0.5 nm。在液晶器件中,光子禁带边缘处光子态密度最大,此处器件阈值较低,容易产生激光辐射。     

The nature of the deep levels responsible for photoelectric memory in GaAs/AlGaAs multilayer quantum-well structures

The electron capture parameters and photoionization cross section of the unintentional deep levels, which are responsible for photoelectrical memory in GaAs/AlGaAs multilayer quantum-well structures, have been found from an analysis of the kinetics of the excess current during and after optical illumination of these structures. The dependence of the photoionization cross section on the photon energy, the capture cross section, and the energy barrier for capture of an electron from the bottom of the conduction band indicate that the unintentional deep levels are DX centers formed by the silicon impurity. These DX centers probably appear during growth of the structures as a result of silicon diffusion from the quantum wells along as-grown defects. Fiz. Tekh. Poluprovodn. 32, 1213–1218 (October 1998)     

Effect of tin content on the electrical and optical properties of sprayed silver sulfide semiconductor thin films

Silver sulfide (Ag₂S) thin films have been deposited on glass substrates by t spray pyrolysis using an aqueous solution which contains silver acetate and thiourea as precursors. The depositions were carried out at a substrate temperature of 250 °C. Structural studies by means of X-ray diffraction show that all tin (Sn)-doped Ag₂S thin films crystallized in a monoclinic space group with noticeable changes in the crystallites' orientation. The discussion of some structural calculated constants has been made with Sn doping in terms of microhardness measurements. Moreover, the optical analysis via the transmittance, reflectance as well as the photocurrent reveals that the direct band gap energy (E_gd) decreases (E_gd varies from 2.34 to 2.16 eV) and the indirect band gap energy (E_gi) increases (E_gi varies from 0.98 to 1.09 eV) slightly as a function of Sn content. Electrical study shows that Sn doping changes the electrical conductivity and proves the thermal activation of electrical conduction.