磁化等离子体的并行三维JEC-FDTD算法及其应用

 给出了三维磁化等离子体的电流密度卷积－时域有限差分(JEC-FDTD)算法的迭代公式,指出该算法与一般FDTD算法实现并行时的不同:增加了电流密度的迭代,以及并行计算时在子域交界面上增加了一些数据的交换.并实现了基于MPI (Message Passing Interface)的并行JEC-FDTD算法.然后用计算涂覆等离子体的金属球的雷达散射截面(RCS)的算例验证了并行程序的可靠性,并测试了并行程序在某集群上的并行效率.最后计算了涂敷磁化等离子体的全尺寸飞机的单站RCS.结果表明并行JEC-FDTD算法是可靠的,而且并行效率高,能计算各向异性磁化等离子体的电大尺寸目标的散射.     

地下目标散射的FDTD计算

该文给出了一种利用时域有限差分法(FDTD),结合各向异性完全匹配层(UPML)以及互易原理,计算地下目标雷达散射截面的计算方法。通过数值实验,对这种计算方法的数值性能作了仔细研究。给出了一批新的不同电尺寸、不同形状、不同介电常数地下目标的雷达散射截面计算结果。     

网络并行FDTD方法分析电大目标电磁散射

本文应用基于消息传递(Message Passing)模式的网络并行计算系统来实现并行FDTD方法.通过区域分割技术将FDTD计算区域分割成多个子域进行分别计算,各个子区域在边界处与其相邻的子区域进行切向场值的数据交换以使整个迭代进行下去,从而实现FDTD并行计算.我们采用PVM并行平台来实现并行FDTD算法.计算结果表明了本方法的正确性和有效性.     

三维电磁散射的网络并行FDTD计算和加速比分析

应用计算机局域网,采用基于消息传递PVM平台和区域分解技术,实现了三维电磁散射的并行FDTD计算.给出了在FDTD两个相邻子区域交界面上所需要传递数据量的估算和分析.在一个实际的计算机局域网环境下,测试了网络并行FDTD计算三维机翼目标散射时的并行加速比和并行效率.实际上,并行加速比和效率不仅与局域网的硬件性能有关,而且与子区域的划分和PVM通信原语的使用等软件设计有关.最后,讨论并行计算中的附加通信量、网络通信性能和负载平衡对FDTD并行计算的影响.     

基于并行MLFMA的SAR舰船目标RCS计算

为提高合成孔径雷达（SAR）图像仿真效果,针对SAR图像中舰船目标雷达散射截面（RCS）计算的精度和效率问题,在利用几何建模方法构建三维舰船模型的基础上,采用并行多层快速多极子算法（MLFMA）计算了舰船目标RCS并分析了该算法的并行加速比。仿真实验表明,并行MLFMA算法适用于高频范围内较大尺寸舰船目标RCS的计算,比物理光学法（PO）和物理光学与矩量混合算法（PO—MOM）具有更高的计算精度且并行方案能明显提高求解目标RCS的效率。     

改进共形FDTD算法及其在RCS计算中的应用

本文首先提出一种结合了三角近似与改进局部网格的共形FDTD算法,然后将该算法应用于金属目标的雷达散射截面计算。实验结果表明,该算法简单高效,不需要通过减小时间步长的方式就能得到较高精度的稳定解。     

电各向异性介质FDTD并行算法的研究

基于消息传递模式的网络并行计算系统和区域分割技术成功地实现了电各向异性介质FDTD并行算法,并用此程序代码计算了电大目标的RCS.经测试,该程序代码并行效率达到87%.根据电各向异性介质FDTD迭代式,电场某一节点的计算,需牵涉到其周围28个节点的电磁场值,详细分析了该情况下并行算法中的数据通讯规律,并实现了局域网内各节点机的协同并行计算.数值结果表明了该算法和程序的正确性及优越性.     

基于MPI实现粗糙地面电磁散射并行FDTD计算

提出了在由微机互连构成的机群(COW)并行计算系统上应用信息传递的方式实现粗糙地面散射并行FDTD算法.综合考虑了区域分割和负载平衡因素,并详细分析了子区域在普通网格和吸收边界处与相邻子区域的场值的数据传递,提高了二维粗糙地面FDTD并行计算效率.解决了在计算电大尺寸粗糙地面散射时产生的内存不足和计算耗时长等瓶颈问题.理论分析和数值计算结果验证了该算法的正确性;当计算电大尺寸的粗糙地面散射时,并行效率提升明显,即当参与计算的处理器数量达到6个时,并行效率仍然可以保持在90%以上.     

FDTD并行算法实现及其数据通信优化

应用计算机局域网,采用基于消息传递（MPI）方式和区域分割技术,实现了FDTD的并行计算。以无限长线电流源在自由空间辐射为算例,对并行FDTD算法进行了验证。结果表明并行算法和串行算法计算结果一致,并有效提高了计算效率。最后通过减少通信数据量、优化数据交换方式及通信和计算重叠的方法,使并行算法的数据通信得到优化,并行计算效率明显提高。     

基于OpenMP的电磁场FDTD多核并行程序设计

探讨了基于OpenMP的电磁场FDTD多核并行程序设计的方法,以期实现该方法在更复杂的算法中应用具有更理想的性能提升。针对一个一维电磁场FDTD算法问题,对其计算方法与过程做了简单描述。在Fortran语言环境中,采用OpenMP＋~粒度并行的方式实现了并行化,即只对循环部分进行并行计算,并将该并行方法在一个三维瞬态场电偶极子辐射FDTD程序中进行了验证。该并行算法取得了较其他并行FDTD算法更快的加速比和更高的效率。结果表明基于OpenMP的电磁场FDTD并行算法具有非常好的加速比和效率。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.