退火温度对纳米PtSi/Si异质结形成的影响

采用XPS,XRD,AFM测试技术,研究退火温度对PtSi/Si异质结薄膜硅化物形成,分布及硅化物薄膜表面形貌的影响。测试结果表明,低温退火,薄膜中相分布顺序为Pt→Pt2Si→PtSi→Si,高温退火,相分布顺序为Pt→Pt2Si PtSi→PtSi→Si或Pt Pt2 Pt2Si PtSi→PtSi→Si。退火温度高,薄膜中晶粒尺寸大,表面粗糙。     

纳米级PtSi/P-Si(100)薄膜形成工艺研究

用XRD、XPS、TEM分析手段研究了在P－Si(100)上溅射的Pt膜,经不同工艺形成PtSi薄膜的物相及连续性。通过分析硅衬底预处理以及退火条件、气氛等对成膜质量的影响,找到形成超薄PtSi膜的工艺方法,制备出4nm连续薄膜。     

Pt扩散阻挡层对PZT/Si薄膜化学结构和性能的影响

运用XPS和AES研究了Pt扩散阻挡层对PZT薄膜／Si界面化学结构和性能的影响：在PZT薄膜和Si基底间增加Pt扩散阻挡层，可以抑制TiCx物种和TiSix物种的形成，促进PZT薄膜的形成反应。Pt扩散阻挡层的存在阻断了氧和Si的相互扩散反应，促进PZT物种形成钙钛矿型晶体结构，使得形成的PZT薄膜具有和体相材料相近的高介电常数和铁电性能。     

Si2O3粒径对传感器用L-MBE沉积Pt/ZnMgO/Si2O3导电性能和组织的影响北大核心CSCD

为了提高高温下声表面传感器导电稳定性,采用激光分子束外延方(L-MBE)法沉积制备Pt/ZnMgO/Si2O3三层薄膜,通过实验测试的方式研究Si2O3粒径对其导电性能和结构的影响,重点研究了薄膜受到高温作用时发生的导电性变化及其微观组织结构的转变。研究结果表明:不同Si2O3粒径下Pt/ZnMgO/Si2O3三层薄膜电阻表现为和温度相近的变化规律,当温度上升后都发生了缓慢增大。当薄膜表面Si2O3粒径为60μm时,电阻发生明显变化的温度依次为1100℃与1150℃。粒径达到90μm以上的薄膜经过保温后电阻保持基本恒定。对200μm粒径Si2O3膜薄膜进行热处理形成了平整表面,生成了许多小尺寸晶粒。随着Si2O3粒径降低,表面区域产生了更大外径尺寸的Pt颗粒,形成了部分Pt微孔。提高Si2O3粒径后,形成强度较低的Pt(111)衍射峰,以及更大半峰宽。Pt(111)衍射峰峰半高宽随Si2O3粒径增加表现出降低变化。     

Pt/Au/p-Si溅射薄膜组织结构特征

在p-Si衬底上,分别淀积5 nm Au膜和5nmPt膜,形成Pt/Au/p-Si结构,500℃退火后形成硅化物薄膜.采用X射线光电子谱和X射线衍射谱研究薄膜成分和相分布,利用原子力显微镜和高分辨电子显微镜观察薄膜表面形貌和界面结构.测试结果表明,薄膜中含有PtSi相和Au相,表面较平坦,PtSi相形成层状结构,Au原子聚集成岛状结构.     

磁头表面超薄DLC保护层厚度测量研究

研究了测量磁头表面超薄DLC薄膜和Si中间层厚度的方法,所用的设备有:AES,XPS,TEM.研究结果显示,XPS和AES测量的结果较为吻合,TEM的结果则存在较大差异.在TEM高分辩像下无法分清DLC和Si层,并对AES,XPS和TEM结果产生差异的原因进行了分析.     

(Pb0.90La0.10)Ti0.975O3/LaNiO3薄膜的射频磁控溅射制备和性能研究

采用射频磁控溅射技术,以LaNiO3(LNO)作为过渡层,在SiO2/Si(100)、Pt(111)/Ti/SiO2/Si(100)衬底上分别获得了(100)、(110)取向的(Pb0.90La0.10)Ti0.975O3(PLT)铁电薄膜.研究了LNO/Pt(111)/Ti/SiO2/Si(100)和LNO/SiO2/Si(100)基底对PLT薄膜微结构和铁电性能的影响.实验结果表明,与在LNO/Pt(111)/Ti/SiO2/Si(100)基底上沉积的(110)取向的PLT薄膜相比较,在LNO/SiO2/Si(100)基底上沉积的高度(100)取向的PLT薄膜具有更好的微结构和更高的剩余极化强度,其2Pr为40.4μC/cm2.     

红外用超薄PtSi膜的一种制备新方法

膜厚制约着PtSi红外探测器的量子效率。本文介绍了一种根据固相反应理论 ,在 1 0 - 4 Pa量级真空度条件下 ,采用真空退火、化学腐蚀手段制备超薄 (约 5 5nm)PtSi膜的新工艺方法 ,并用XRD ,XPS对所制备的样品进行了物相分析。该方法所需温度低 ,时间短 ,制得薄膜均匀性好     

a-Si∶H/Al/a-Si∶H三层复合膜的低温晶化研究

采用真空热蒸发与PECVD方法 ,在特殊设计的“单反应室双沉积法”薄膜沉积设备中沉积a Si∶H/Al/a Si∶H三层复合薄膜 ,并利用XRD ,XPS及SEM等方法对薄膜在不同温度退火后的晶化行为进行了研究。结果表明 ,随着热处理过程的进行 ,金属Al逐步向表面扩散 ,在金属Al锈导下a Si∶H层出现晶化的温度不高于 2 5 0℃。在Al层厚度低于 2 2nm时 ,a Si∶H向晶态硅转变的量随着Al层厚度的增加而增加 ,而当Al层厚度大于 2 2nm后 ,a Si∶H向晶态硅转变的量与Al层厚度无关     

高度取向的(Pb_(0.5)Sr_(0.5))TiO_3/LaNiO_3异质结构铁电薄膜性能

用sol-gel方法在Pt(111)/Ti/SiO2/Si(100)衬底上制备了具有LaN iO3(LNO)缓冲层的(Pb0.5Sr0.5)TiO3(PSrT50)/LNO/Pt异质结构铁电薄膜。X射线分析发现PSrT50薄膜在(100)方向高度取向,同时扫描电镜图像显示薄膜结构致密、表面平整。通过和直接在Pt上制备的、相同厚度的PSrT50薄膜比较,PSrT50/LNO/Pt结构薄膜在室温下具有更大的剩余极化(Pr=4.5μC/cm2)和更高的介电常数(rε=850)。同时,漏电流机理分析表明,PSrT50/LNO/Pt结构薄膜在低电场作用下呈现Pool-Frenkel发射效应,在高电场作用下则表现为空间电荷限制电流。     

Topographical, compositional and schottky characterization of PtSi/Si schottky diodes

PtSi ultra-thin films were grown on Si-wafer using pulsed laser deposition (PLD). As determined from X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), the compositional structures of the PtSi were discussed. Furthermore, the surface structure of these films was studied by atomic force microscopy (AFM). A possible growth mechanism is presented, on studying the variation of morphological features (i.e., roughness and size of crystallites) with annealing temperature and films thickness. In addition, by the AFM studies and schottky characterization measurements of PtSi films forming during various annealing processing, preferable preparing conditions are proposed to form the continuous and smooth PtSi thin film on Si substrate by PLD.     

Nano-cube MgO formed on silicon substrate using pulsed laser deposition

Nano-cube MgO particles were formed on Si substrates by deposition of an MgO target using pulsed laser deposition method. An epitaxial film grows on Si(001) substrate with its contraction of lattice constants. In this study, expecting high quality MgO film, the MgO film prepared in the oxygen pressure ranging from 75-400 mTorr at the high temperature of -750 degrees C. The deposited MgO showed the growth of (001) preferred orientation on the Si(001) substrate. However, X-ray Photoelectron Spectroscopy (XPS) indicated the MgO film did not form a continuous film on the Si surface. Interestingly, the surface morphology observed by an Atomic Force Microscopy (AFM) showed nano-cube MgO particles scattered on the smooth surface of Si substrate. After annealing the nano-cube MgO, the shape of MgO particles were changed from nano-cube to round shaped particles. The AFM image of the surface showed round shaped MgO nanoparticles scattered on rough surface. X-ray Diffraction (XRD) revealed the epitaxial growth of MgO(001) with cubic on cubic arrangement on the Si(001) substrate (MgO[100] parallel to Si[100]).     

脉冲激光法原位制备纳米二氧化硅杂化聚苯胺研究

用脉冲激光轰击法连续制备聚苯胺原位修饰的纳米二氧化硅,通过溶剂转换的方法,制备得到聚苯胺/纳米二氧化硅杂化薄膜材料,用标准四探针电性能测试,TEM、UV-Vis、TG、XRD、XPS等手段对其进行表征,探讨了纳米二氧化硅的加入对聚苯胺热、电方面产生的影响,结果表明,用本方法制备的纳米二氧化硅具有较小粒径,不团聚,能较好地分散于聚苯胺中与之形成杂化材料,纳米二氧化硅与聚苯胺分子链存在强烈的相互作用,破坏了聚苯胺的规整堆积,导致其热分解温度下降,导电载流子的浓度及迁移率减少,电导率值下降,而抗氧化性有所提高。     

硅基PtSi纳米薄膜制备及应用研究进展

PtSi红外探测器是一种重要的光电器件，在军事和民用方面均起着非常重要的作用。高质量硅基PtSi薄膜的制备是基础。本文介绍了溅射、分子束外延、脉冲激光沉积和激光分子束外延等制备PtSi薄膜的方法。并评述了PtSi红外探测器的最新应用研究进展及发展趋势。     

AFM Studies of Platinum Silicide Thin Films on Silicon Grown by Pulsed Laser Deposition

PtSi ultra-thin films were grown on Si-wafer using pulsed laser deposition(PLD).The surface structure of these films was studied by atomic force microscopy(AFM).In addition ,the compositional structure of the PtSi as deter-mined from X-ray photoelectron spectroscopy(XPS)is discussed.First report of a possible growth mechanism is presented, on studying the variation of morphological features(i,e,roughness and size of crystallites)with annealing temperatures and the film thicknesses..     

脉冲激光薄膜制备技术

脉冲激光薄膜沉积是近年来受到普遍关注的制膜新技术。简要介绍了脉冲激光薄膜沉积技术的物理原理、独具的特点和研究发展动态,并介绍了采用脉冲激光薄膜沉积技术制备硅基纳米PtSi薄膜的结果     

Reversible wettability of ZnO nanostructured thin films prepared by pulsed laser deposition

This work reports on the photoinduced wettability changes of high quality nanostructured ZnO films grown on Si by pulsed laser deposition (PLD) under different growth parameters. The wetting behavior of the resulting films can be reversibly switched from hydrophobic to hydrophilic, through alternation of UV illumination and dark storage. The kinetics of this wetting transition are studied by monitoring the time evolution of the corresponding contact angles. Finally, the influence of the film properties over the observed wetting response is discussed.     

ZnO(101) films by pulsed reactive crossed-beam laser ablation

We have employed pulsed reactive crossed-beam laser ablation (PRCLA) to deposit a (101) oriented ZnO film. In this method, a supersonic jet of oxygen pulse is made to cross the laser plume from a zinc metal target while being carried to the Si(111) substrate. The obtained deposit was nanocrystalline ZnO as confirmed by a host of characterization techniques. When the substrate was held at varying temperatures, from room temperature to 900°C, the crystallinity of the obtained films increased as expected, but importantly, the crystallographic orientation of the films was varied. High substrate temperatures produced the usual (001) oriented films, while lower substrate temperatures gave rise to increasingly (101) oriented films. The substrate held at room temperature contained only the (101) orientation. The film morphology also varied with the substrate temperature, from being nanoparticulate to rod-like deposits for higher deposition temperatures. Surprisingly, the (101) orientation showed reactivity with acetone forming carbonaceous nanostructures on the surface.     

Surface morphology of AlN films synthesized by pulsed laser deposition

Surface morphology of AlN films, synthesized on Si substrates by pulsed laser deposition, has been examined by recording atomic-force-microscopy (AFM) images. The influence of N₂ ambient pressure, ranging from 5 × 10⁻⁴ Pa to 10 Pa, is reflected well in the alteration of the surface roughness and size of crystallites of the AlN films. A tendency of a decrease in the surface roughness with increasing N₂ pressure was observed, which also correlates with the polycrystalline structure of the films. Deposition in vacuum resulted in the highest surface roughness due to the large size of crystallites emerging from the surface, while increasing the nitrogen pressure yielded smaller crystallites and a smoother film surface. The presented results could be useful for applications of pulsed laser deposited AlN in different optical and acoustic devices, where the crystalline quality of the AlN films and the surface is very important.