乙醇溶液电沉积La-Ni合金工艺研究

以氯化镍、氯化镧为主盐,以柠檬酸铵为络合剂的乙醇镀液中可以实现电沉积La-Ni合金镀层。研究表明,镀液中[La^3 ]/[Ni^2 ]比值增加,升高镀液温度,提高电流密度均可使镀层La含量提高。最佳镀液组成及工艺条件下,镀层La含量为15％左右,镀层光亮、结晶细致,镀液分散能力、覆盖能力良好,阴极电流效率可达70％,SEM、XRD分析表明镀层为非晶态,XPS分析表明,镀层中镍、镧的化学状态为Ni、LaH2和少量的La、La2O3。通过对镀液的循环伏安曲线测量,初步探讨了La与Ni共沉积的机理,其共沉积特性符合诱导共沉积规律。     

Cu2O半导体薄膜在酸性条件下的电化学沉积

在酸性溶液中在透明导电玻璃(ITO)基体上电化学沉积Cu2O薄膜.通过实验研究了电沉积工艺条件对电沉积Cu2O薄膜的影响.X射线衍射(XRD)和扫描电镜(SEM)对薄膜的微观结构和表面形貌进行了分析.结果表明,水浴温度较高时,酸性镀液中Ac-HAc共轭缓冲体系的反应速率提高,可以有效抑制铜单质的生长;镀液中铜离子的浓度...     

电镀高饱和磁感应(Bs)CoNiFe软磁薄膜研究

研究了电沉积 CoNiFe 合金薄膜镀液中主盐离子浓度对膜层磁性能的影响。用振动样品磁强计(VSM)和四探针等方法测试分析了膜层的物理性能。结果表明膜层的物理性能与合金镀液中的主盐离子浓度密切相关,镀液中Ni2 、Fe2 、Co2 浓度分别为0.2、0.012和0.063mol/L时,电沉积的 CoNiFe合金膜层的电磁性能较佳。其饱和磁化强度 Bs 达 1.9T,矫顽力Hc 为91.5A/m,电阻率为45μΩ·cm,在 1MHz下磁导率μi 为602。     

碱性镀液电沉积非晶-纳米晶Ni-Mo合金工艺探讨

用非晶态合金和纳米晶合金作电极材料各有利弊,而用酸性溶液制备的Ni-Co合金镀层存在内应力较大且电流效率低等不足.为此,采用电沉积技术在碱性镀液中制备了非晶-纳米晶Ni·Mo合金,利用X射线衍射(XRD)、扫描电镜(SEM)、能谱(EDS)、极化曲线等研究了电沉积工艺对镀层Mo含量、结构及形貌的影响.结果表明:镀层Mo含量随镀液中钼酸盐浓度增加而增加,随柠檬酸盐浓度增加、镀液温度升高、电流密度增大先增加后减小,pH值对镀层结构有显著影响;镀层Mo含量在21.00%～26.00%时,Ni-Mo合金镀层为非晶与纳米晶混合结构,非晶态相含量占60%以上,纳米晶的晶粒尺寸较小,镀层表面均匀、颗粒细小、致密性较高;10.0 g/LNa2MoO4·2H2O,64.0 g/L Na3C6H5O7·H2O,pH值10.0,电流密度5～8 A/dm2,温度35℃时,获得的镀层为非晶与纳米晶混合结构,且表面质量较好.     

计算机求定CoFeB薄膜动力学参数研究

根据化学镀CoFeB薄膜试验得到镀液中反应物浓度、pH值、温度以及对应沉积速率。利用回归分析的研究方法,建立了沉积速率的多元线性回归分析的数学模型：y=b0＋^r∑i=1biχi沉积量与反应物浓度、pH值等实验数据的相关性用剩余方差S来表征,借助于计算机编程运算,求出回归系数与回归系数的估计值b0-6、估计值的置信区间、残差r、残差的置信区间rint。研究上述诸因素所对应的反应动力学参数,求出了镀液沉积速率的方程式：v=k[Co^2＋]^0.82[Fe]^0.38[BH^-4]^1.62[OH^-]^0.83[L1]^-1.02[L2]^-0.95exp（-Ea/RT）以及通过上述的线形回归分析和实验验证可以得到化学镀CoFeB最佳配方。     

NdCl3镀液浓度对电镀CoNdNiMnP永磁薄膜阵列磁性能的影响

基于轻稀土元素-Nd与过渡金属元素-Co之间的铁磁耦合作用提高电镀CoNiMnP永磁薄膜阵列的磁性能,在电镀时引入稀土Nd元素进入CoNiMnP永磁薄膜阵列中,通过改变镀液中NdCl3的浓度而改变CoNdNiMnP薄膜中的Nd含量.对镀液中NdCl3浓度与薄膜磁性能的关系进行了分析与测试,结果表明室温下,在电流密度为5mA/cm2时,具有垂直各向异性的CoNdNiMnP永磁薄膜阵列被成功地电镀得到.随着NdCl3浓度的增加,薄膜的磁性能提高,当NdCl3浓度增加到0.25×103g/cm3时,薄膜的磁性能达到最大值,继续增加镀液中NdCl3浓度,薄膜阵列的磁性能不再增加.     

工艺条件对硫脲-酒石酸-柠檬酸三配位体系化学镀锡沉积速度的影响

为了提高硫脲、酒石酸、柠檬酸三配位体系化学镀锡的沉积速度和镀液稳定性,考察了硫脲单配位体系、硫脲-酒石酸及硫脲-柠檬酸双配位体系、硫脲-酒石酸-柠檬酸三配位体系镀锡液中配位剂浓度对沉积速度的影响,并研究了三配位体系主盐浓度、还原剂浓度、镀液温度、pH值、沉积时间对沉积速度的影响,优化了工艺条件,探讨了最优工艺制备的镀层...     

在电沉积锌—铁合金镀液中柠檬酸的作用

用循环伏安法研究了柠檬酸对Ｚｎ－Ｆｅ合金电沉积的影响，结果表明，镀液中加入柠檬酸后使Ｚｎ－Ｆｅ合金电沉积的阴极极化增大。从含有柠檬酸的Ｚｎ－Ｆｅ合金镀液中获得的Ｚｎ－Ｆｅ合金镀层的阳极溶解峰与纯Ｚｎ镀层，从简单盐中获的Ｚｎ－Ｆｅ合金镀层相比，其峰电位正移，使Ｚｎ－Ｆｅ合的耐蚀性提高。     

硫酸盐电沉积Zn-Fe合金工艺的研究

通过正交试验研究了酸性硫酸盐体系电沉积低铁含量的Zn-Fe合金镀层工艺,结果表明该体系的镀液配方简单,镀液稳定,操作简便,成本低廉。以柠檬酸钠和柠檬酸分别为络合剂和缓冲剂的镀液pH值稳定。通过Hull糟试验还发现,该镀液的电流密度范围宽,镀层结晶细致、光亮平整。     

稀土在氯化物体系电沉积锌-铁合金中的作用

为了研究稀土在电沉积锌-铁合金中对镀层和镀液的作用,通过在镀液中添加LaCl3后,对镀层组分、厚度、耐蚀性的改变,镀液稳定性、分散力以及阴极极化作用的影响进行了研究.结果发现,稀土的加入有利于提高镀液稳定性、分散能力和减薄镀层,使锌-铁合金镀层的耐蚀性在中性5%NaCl溶液中有较大提高.研究表明,稀土盐的加入能改善镀液性能,改变镀层成分和锌-铁合金电沉积的阴极极化行为,同时提高镀层的耐腐蚀性.     

Anodic deposition of colloidal iridium oxide thin films from hexahydroxyiridate(IV) solutions

A facile, in-situ deposition route to stable iridium oxide (IrO(x)·nH(2)O) nanoparticle thin films from [Ir(OH)(6)](2-) solutions is reported. The [Ir(OH)(6)](2-) solution, made by alkaline hydrolysis of [IrCl(6)](2-), is colorless and stable near neutral pH, and forms blue IrO(x)·nH(2)O nanoparticle suspensions once it is adjusted to acidic or basic conditions. IrO(x)·nH(2)O nanoparticle thin films are grown anodically on glassy carbon, fluorine-doped tin oxide, and gold electrodes by electrolyzing [Ir(OH)(6)](2-) solutions at +1.0-1.3 V versus Ag/AgCl. The thickness of the IrO(x)·nH(2)O films can be controlled by varying the concentration of [Ir(OH)(6)](2-) , the deposition potential, and/or the deposition time. These thin films are stable between pH 1 and 13 and have the lowest overpotential (η) for the oxygen evolution reaction (OER) of any yet reported. Near neutral pH, the Tafel slope for the OER at a IrO(x)·nH(2)O film/Au rotating disk electrode was 37-39 mV per decade. The exchange current density for the OER was 4-8 × 10(-10) A cm(-2) at a 4 mC cm(-2) coverage of electroactive Ir.     

Synthesis of β-Mo(2)C thin films

Thin films of stoichiometric β-Mo(2)C were fabricated using a two-step synthesis process. Dense molybdenum oxide films were first deposited by plasma-enhanced chemical vapor deposition using mixtures of MoF(6), H(2), and O(2). The dependence of operating parameters with respect to deposition rate and quality is reviewed. Oxide films 100-500 nm in thickness were then converted into molybdenum carbide using temperature-programmed reaction using mixtures of H(2) and CH(4). X-ray diffraction confirmed that molybdenum oxide is completely transformed into the β-Mo(2)C phase when heated to 700 °C in mixtures of 20% CH(4) in H(2). The films remained well-adhered to the underlying silicon substrate after carburization. X-ray photoelectron spectroscopy detected no impurities in the films, and Mo was found to exist in a single oxidation state. Microscopy revealed that the as-deposited oxide films were featureless, whereas the carbide films display a complex nanostructure.     

Nano-polycrystalline vanadium oxide thin films prepared by pulsed laser deposition

Nano-polycrystalline vanadium oxide thin films have been successfully produced by pulsed laser deposition on Si(100) substrates using a pure vanadium target in an oxygen atmosphere. The vanadium oxide thin film is amorphous when deposited at relatively low substrate temperature (500 degrees C) and enhancing substrate temperature (600-800 degrees C) appears to be efficient in crystallizing VOx thin films. Nano-polycrystalline V3O7 thin film has been achieved when deposited at oxygen pressure of 8 Pa and substrate temperature of 600 degrees C. Nano-polycrystalline VO2 thin films with a preferred (011) orientation have been obtained when deposited at oxygen pressure of 0.8 Pa and substrate temperatures of 600-800 degrees C. The vanadium oxide thin films deposited at high oxygen pressure (8 Pa) reveal a mix-valence of V5+ and V4+, while the VOx thin films deposited at low oxygen pressure (0.8 Pa) display a valence of V4+. The nano-polycrystalline vanadium oxide thin films prepared by pulsed laser deposition have smooth surface with high qualities of mean crystallite size ranging from 30 to 230 nm and Ra ranging from 1.5 to 22.2 nm. Relative low substrate temperature and oxygen pressure are benifit to aquire nano-polycrystalline VOx thin films with small grain size and low surface roughness.     

钼酸钡薄膜的室温电化学制备工艺技术研究

采用恒电流型电化学技术在室温环境下制备出了结晶良好的致密的钼酸钡薄膜；深入研究了沉积时间、PH值对薄膜生长的影响，找到了比较适宜的制备工艺；分析讨论了沉积时间对晶格常数的影响。在本实验条件下，溶液的碱度调控在13～14之间时，可以通过阳极氧化法得到结晶良好的BaMoO4薄膜；当电流密度为1mA／cm^2及电极间距为2cm时，如果要得到致密的薄膜，沉积时间必须在100min以上。     

Substrate dependent structural and magnetic properties of pulsed laser deposited Fe3O4 thin films

Nanocrystalline iron oxide thin films have been deposited on various substrates such as quartz, MgO(100), and Si(100) by pulsed laser deposition technique using excimer KrF laser (248 nm). The orientations, crystallite size and lattice parameters were studied using X-ray diffraction. The XRD results show that the films deposited on MgO and Si substrates are highly oriented and show only (400) and (311) reflections respectively. On the other hand, the orientation of the films deposited on quarts substrate changed from (311) to (400) with an increase in the substrate temperature from 400 degrees C to 600 degrees C, indicating thereby that the film growth direction is highly affected with nature of substrate and substrate temperature. The surface morphology of the deposited films was studied using Atomic Force Microscopy (AFM) and spherical ball like regular features of nanometer size grains were obtained. The magnetic properties were studied by Superconducting Quantum Interference Device (SQUID) magnetometer in the magnetic field +/- 6 Tesla. The magnetic field dependent magnetization (M-H) curves of all the Fe3O4 thin films measured at 5 K and 300 K show the ferrimagnetic nature. The electrochemical sensing of dopamine studied for these films shows that the film deposited on MgO substrate can be used as a sensing electrode.     

Reduction of Coercivity of Fe-N Soft Magnetic Film by Heat Treatment

200 nm thick Fe-N magnetic thin films were deposited on glass substrates by RF sputtering. The as-deposited films havehigh saturation magnetization but their coercivity is also higher than what is needed Therefore it is very important to reducecoercivity.The samples were vacuum annealed at 250℃ under 12000 A/m magnetic field. When the N content was in therange of 5～7 at. pct, the thin films consisted of α'+α" after heat treatment and had excellent soft magnetic properties of4πM_s=2.4 T, H_C<80 A/m. However, the thickness of a recording head was 2 μm, and H_c increased as thickness increased.In order to reduce the H_c, the sputtering power was raised from 200 W to 1000 W to reduce the grain size. 2 μm Fe-N thin     

Characterization of ZnO：Al Films Deposited on Organic Substrate by r.f. Magnetron Sputtering

Transparent conducting Al-doped zinc oxide (ZnO:AI) films with good adhesion have been deposited on polyimide thin film substrates by r.f. magnetron sputtering technique at low substrate temperature (25-180℃). The structural, optical and electrical properties of the deposited films were investigated. High quality films with electrical resistivity as low as 8.5×10-4 Ω·cm and the average transmittance over 74% in the wavelength range of the visible spectrum have been obtained. The electron carrier concentrations are in the range from 2.9×1020 to 7.1×1020 cm-3 with mobilities from 4 to 8.8 cm2 V-1s-1. The densities of the films are in the range from 4.58 to 5.16 g/cm-3.     

Thin molybdenum oxide films produced by molybdenum pentacarbonyl 1-methylbutylisonitrile with plasma-assisted chemical vapor deposition

Molybdenum oxide thin films were prepared by plasma-enhanced chemical vapor deposition of molybdenum pentacarbonyl 1-methylbutylisonitrile. This precursor is an interesting alternative for the commonly used molybdenum hexacarbonyl, because the substance is liquid at room temperature, offers sufficient volatility and stability to air and water. The film growth was monitored in situ by a soft X-ray reflectivity measurement. The films were deposited with different plasma gases (hydrogen and oxygen) under different conditions and analysed by Auger electron spectroscopy, X-ray diffraction and spectral ellipsometry.     

Laser-induced molybdenum oxide formation by low energy (nJ)-high repetition rate (MHz) femtosecond pulses

Experimental results on femtosecond (fs) laser-induced oxidation of molybdenum (Mo) thin films are presented. The Mo thin films were deposited on fused silica substrates by the magnetron DC-sputtering technique. The as-deposited thin films were characterized by X-ray diffraction, which indicates that bbc-molybdenum was grown. The films were irradiated in ambient air, using a femtosecond Ti:Sapphire laser (800 nm, 60 fs pulse duration, 70 MHz and 6.5 nJ per pulse). The molybdenum thin films were laser scanned in the form of several millimeters long straight line traces, by using a per pulse laser fluence well below the (previously reported) ablation threshold. Optical Microscopy (OM) and Scanning Electron Microscopy (SEM) were used to study the laser-induced optical and morphology changes on the exposed zone. Energy Dispersive Spectrometry (EDS) and Micro-Raman Spectroscopy (MRS) were used to determine the degree of oxidation and the phase change across the laser irradiated paths on the Mo thin film. Under the above described experimental conditions our results show that it is possible to laser-induce a specific oxide phase from the molybdenum starting material. Our micro-Raman results clearly demonstrate that the fs-laser irradiation induces the m-MoO₂ and o-Mo₄O₁₁ crystalline phases at the directly laser irradiated trace and its close proximity.     

Preparation and characterization of Cu–In–S thin films by electrodeposition

In this paper, we report the preparation and characterization of Cu–In–S thin films on stainless steel prepared by electrodeposition technique. The electrolytic bath used for preparation of the thin films consists of metal salts dissolved in a buffer solution. This buffer solution can control the formation and composition of thin films. In order to get adequate crystalline of CuInS₂ thin films, the as deposited films were annealed in N₂-atmosphere. Samples were characterized using X-ray diffraction (XRD), electron probe micro-analysis (EPMA), and scanning electron microscopy (SEM). The band-gap value of the material was estimated using optical transmittance and reflectance data on thin films deposited on commercial glass/indium tin oxide (ITO) substrates. It was found that the band-gap of the films is close to 1.5 eV.