Enthalpy measurements of La2Te3O9 and La2Te4O11

Enthalpy increment measurements on La₂Te₃O₉(s) and La₂Te₄O₁₁(s) were carried out using a Calvet micro-calorimeter. The enthalpy values were analyzed using the non-linear curve fitting method. The dependence of enthalpy increments with temperature was given as: H°(T) − H°(298.15 K) (J mol⁻¹) = 360.70T + 0.00409T² + 133.568 × 10⁵/T − 149 923 (373 ? T (K) ? 936) for La₂Te₃O₉ and H°(T) − H°(298.15 K) (J mol⁻¹) = 331.927T + 0.0549T² + 29.3623 × 10⁵/T − 114 587 (373 ? T (K) ? 936) for La₂Te₄O₁₁.     

Formation of planar waveguide in BiB3O6 crystal by MeV carbon implantation

Non-leaky planar waveguide structure has been fabricated in x-cut BiB₃O₆ crystal by 6 MeV C³⁺ ion implantation at a dose of 1 × 10¹⁴ ions/cm². The effective refractive indices of the waveguide are measured at a wavelength of 632.8 nm. We perform a computer code based on the finite difference method to reconstruct the refractive index profiles of n_x and n_y of this waveguide. The beam propagation method is used to calculate the electric and magnetic field profiles in the waveguide region from the reconstructed refractive index profiles. Our simulated data show that the refractive index increased waveguide layer can confine the mode completely.     

Reactivity of hydrogen peroxide towards Fe3O4, Fe2CoO4 and Fe2NiO4

The kinetics of CRUD oxidation by H₂O₂ has been studied using aqueous suspensions of metal oxide powder. Fe₃O₄, Fe₂CoO₄ and Fe₂NiO₄ were used as model compounds for CRUD. In addition, the activation energies for the reaction between H₂O₂ and the three CRUD models were determined. The rate constants at room temperature were determined to 6.6 (±0.4) × 10⁻⁹, 3.4 (±0.4) × 10⁻⁸ and 1.6 × 10⁻¹⁰ m min⁻¹ for Fe₃O₄, Fe₂CoO₄ and Fe₂NiO₄, respectively. The corresponding activation energies are 52 ± 4, 44 ± 5 and 57 ± 7 kJ mol⁻¹, respectively. The mechanism of the reaction is briefly discussed indicating that the final solid product in all three cases is Fe₂O₃. In addition to the experimental studies, the theoretical grounds for kinetics of reactions in particle suspensions are discussed. The theoretical discussion is also used to explain the somewhat unexpected trends in reactivity observed experimentally.     

Electrical properties of annealed, fully metamict REE2FeBe2Si2O10

The electrical properties of annealed, fully metamict gadolinite REEFe²⁺Be₂Si₂O₁₀ are studied as a function of annealing temperature. Changes due to annealing are also probed by ⁵⁷Fe Mössbauer spectroscopy and X-ray diffraction. The electrical conductivity measured at f = 100 Hz between 110 and 750 K varies markedly, ranging from 10⁻¹⁰ to 10⁻⁶ S m⁻¹ for untreated samples and 10⁻⁹ to 10⁻³ S m⁻¹ for sample annealed in argon at 1373 K. Average measured activation energies for electrical conduction are 0.47 and 0.63 eV for ranges of 400-450 K and 500-600 K, respectively. The dielectric permittivity shows strong dispersion effects above 235 K. After high temperature annealing, the electrical conductivity shows a marked dispersion below 604 K. The combination of polaron hopping and hydroxyl anion migration is proposed for the electrical conduction mechanism.     

Alpha-decay induced amorphization of Cm-doped Gd2TiZrO7

The sample of pyrochlore-based ceramic doped with a ²⁴⁴Cm isotope with a target composition Gd_1.935Cm_0.065 TiZrO₇ was prepared by cold pressing and sintering. The pyrochlore structure phase was predominant in the sample but minor perovskite and gadolinium zirconate (ideally Gd₂Zr₂O_7−x) were also present. The Ti/Zr pyrochlore phase was rendered amorphous at a dose of 4.6 × 10¹⁸ α-decays/g (0.60 dpa). Volume expansion of the pyrochlore lattice was found to be 2.7 vol.% at a dose of 3.85 × 10¹⁸ α-decays/g.     

Electron impact ionisation of encapsulated Tc@C60 and Tc@C70

The present study shows simultaneous surface ionisation and electron impact ionisation during the formation and investigation of endohedral fullerenes ^99mTc@C₆₀ and ^99mTc@C₇₀. The endohedral fullerenes were generated using a mass spectrometer with a triple rhenium filament as an ion source. The ionisation energies (IE) determined were: 8.52 ± 0.25 eV for ^99mTc@C₆₀ and 9.57 ± 0.25 eV for ^99mTc@ C₇₀.     

Oxygen potential measurements of Am0.5Pu0.5O2−x by EMF method

The dependence of the oxygen potentials on oxygen non-stoichiometry and temperature of Am_0.5Pu_0.5O_2−x has been obtained by the electromotive force (EMF) method with the cell: (Pt) air |Zr(Ca)O_2−x| Am_0.5Pu_0.5O_2−x (Pt). The x value of Am_0.5Pu_0.5O_2−x was changed at 1333 K over 0.02 < x ? 0.25 by the coulomb titration method. The temperature dependence of the oxygen potential was also measured over the range of 1173-1333 K. It was found that the oxygen potential decreased from −80 to −360 kJ mol⁻¹ with increasing x from 0.021 to 0.22 at 1333 K and that it remained almost constant at −360 kJmol⁻¹ around x = 0.23. It was concluded that Am_0.5Pu_0.5O_2−x should be composed of the single fluorite-type phase over 0.02 < x ? 0.22 and the mixed phases of fluorite-type and (Am, Pu)₉O₁₆ at around x = 0.23.     

Reduction of UO2 by H2

The reactivity of H₂ towards UO₂²⁺ has been studied experimentally using a PEEK coated autoclave where the UO₂²⁺ concentration in aqueous solution containing 2 mM carbonate was measured as a function of time at p_H2∼40 bar. The experiments were performed in the temperature interval 74-100 °C. In addition, the suggested catalytic activity of UO₂ on the reduction of UO₂²⁺ by H₂ was investigated. The results clearly show that H₂ is capable of reducing UO₂²⁺ to UO₂ without the presence of a catalyst. The reaction is of first order with respect to UO₂²⁺. The activation energy for the process is 130 ± 24 kJ mol⁻¹ and the rate constant is k_298K=3.6×10⁻⁹ l mol⁻¹ s⁻¹. The activation enthalpy and entropy for the process was determined to 126 kJ mol⁻¹ and 16.5 J mol⁻¹ K⁻¹, respectively. Traces of oxygen were shown to inhibit the reduction process. Hence, the suggested catalytic activity of freshly precipitated UO₂ on the reduction of UO₂²⁺ by H₂ could not be confirmed.     

Electronic sputtering of Gd3Ga5O12 and Y3Fe5O12 garnets: Yield, stoichiometry and comparison to track formation

The results of present paper have shown that sputtering of yttrium iron garnet (Y₃Fe₅O₁₂) under swift heavy ions in the electronic energy loss regime is non-stoichiometric. Here we are presenting additional experimental results for gadolinium gallium garnet (Gd₃Ga₅O₁₂) as target. The irradiations were performed with different ions (⁵⁰Cr (589 MeV), ⁸⁶Kr (195 MeV) and ¹⁸¹Ta (400 MeV)) impinging perpendicularly to the surface. As earlier, the sputtering yield was determined by collecting the emitted gadolinium and gallium atoms on a thin aluminium foil, placed upstream above the target and analyzing the Al catcher by Rutherford backscattering. Also for Gd₃Ga₅O_12, the emission of Gd and Ga is non-stoichiometric. Sputtering appears above a critical electronic stopping power of S_th = 11.6 ± 1.5 keV/nm, which is larger than the threshold for track formation, in agreement with other amorphisable materials. In addition, the angular distribution of the sputtered species was measured for Y₃Fe₅O₁₂ and Gd₃Ga₅O₁₂ using 200 MeV Au ions impinging the surface at 20° relatively to the surface. For the two garnets the ratio of Y/Fe (and Gd/Ga) varies with the angle of emitted species and the stoichiometry seems to be preserved only for an emission perpendicular to the surface.     

Light ion irradiation effects on stuffed Lu2(Ti2−xLux)O7−x/2 (x = 0, 0.4 and 0.67) structures

We have recently synthesized “stuffed” (i.e., excess Lu) Lu₂(Ti_2−xLu_x)O_7−x/2 (x = 0, 0.4 and 0.67) compounds using conventional ceramic processing. X-ray diffraction measurements indicate that stuffing more Lu³⁺ cations into the oxide structure leads eventually to an order-to-disorder (O-D) transition, from an ordered pyrochlore to a disordered fluorite crystal structure. At the maximum deviation in stoichiometry (x = 0.67), the Lu³⁺ and Ti⁴⁺ ions become completely randomized on the cation sublattices, and the oxygen “vacancies” are randomized on the anion sublattice. Samples were irradiated with 400 keV Ne²⁺ ions to fluences ranging from 1 × 10¹⁵ to 1 × 10¹⁶ ions/cm² at cryogenic temperatures (∼77 K). Ion irradiation effects in these samples were examined by using grazing incident X-ray diffraction. The results show that the ion irradiation tolerance increases with disordering extent in the non-stoichiometric Lu₂(Ti_2−xLu_x)O_7−x/2.     

Amorphisation of ZnAl2O4 spinel under heavy ion irradiation

ZnAl₂O₄ spinels have been irradiated with several ions (Ne, S, Kr and Xe) at the IRRSUD beamline of the GANIL facility, in order to determine irradiation conditions (stopping power, fluence) for amorphisation. We observed by transmission electron microscopy (TEM) that with Xe ions at 92 MeV, individual ion tracks are still crystalline, whereas an amorphisation starts below a fluence of 5 × 10¹² cm⁻² up to a total amorphisation between 1 × 10¹³ and 1 × 10¹⁴ cm⁻². The coexistence of amorphous and crystalline domains in the same pristine grain is clearly visible in the TEM images. All the crystalline domains remain close to the same orientation as the original grain. According to TEM and X-ray Diffraction (XRD) results, the stopping power threshold for amorphisation is between 9 and 12 keV nm⁻¹.     

Radiation effects on PbO-Al2O3-B2O3-SiO2 glasses by FTIR spectroscopy

The infrared absorption spectra of PbO-Al₂O₃-B₂O₃-SiO₂ glasses have been measured in the spectral range 600-4000 cm⁻¹ before and after absorbed dose of 50 Gy, 4 kGy and 50 kGy to investigate the structural change due to irradiation. The structural change due to composition has also been discussed. The experimental results clearly indicate that after irradiation, a significant change in structure of lead alumino borosilicate glass network is observed. It was shown that BO₄ groups decreases and BO₃ groups increases with the increase of Al₂O_3.     

Interface strain study of thin Lu2O3/Si using HRBS

The interface of thin Lu₂O₃ on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. Among them, Lu₂O₃ has been found to have the highest lattice energy and largest band gap, making it a good candidate for an alternative high-k gate dielectric. HRBS depth profiling results have shown the existence of a thin (∼2 nm) transitional silicate layer beneath the Lu₂O₃ films. The thicknesses of the Lu₂O₃ films were found to be ∼8 nm and the films were determined to be non-crystalline. Angular scans were performed across the [1 1 0] and [1 1 1] axis along planar channels, and clear shifts in the channeling minimum indicate the presence of Si lattice strain at the silicate/Si interface.     

Effect of Ag and Li ion irradiation on superconducting Tl2Ca2Ba2Cu3O10 single crystals

The effect of irradiation by 50 MeV Li³⁺ and 200 MeV Ag¹⁵⁺ ions on single crystals of Tl₂Ca₂Ba₂Cu₃O₁₀ (Tl2223) superconductor has been investigated at different fluences. Isothermal magnetization hysteresis loops have been recorded at different temperatures using a SQUID magnetometer and the effect of irradiation on the critical current density, irreversible field, second magnetization peak and pinning force has been studied. Irradiation by 200 MeV Ag¹⁵⁺ ions resulted in increased hysteresis and irreversibility field while no change in second magnetization peak position and critical temperature was observed. A broadening in the hysteresis loop before the second magnetization peak was also observed for the crystals irradiated by Li³⁺ ions. Annealing of irradiated crystals at 500 °C resulted in reduction of point defects created by Li³⁺ ions.     

In situ studies of ion irradiated inverse spinel compound magnesium stannate (Mg2SnO4)

Magnesium stannate spinel (Mg₂SnO₄) was synthesized through conventional solid state processing and then irradiated with 1.0 MeV Kr²⁺ ions at low temperatures 50 and 150 K. Structural evolutions during irradiation were monitored and recorded through bright field images and selected-area electron diffraction patterns using in situ transmission electron microscopy. The amorphization of Mg₂SnO₄ was achieved at an ion dose of 5 × 10¹⁹ Kr ions/m² at 50 K and 10²⁰ Kr ions/m² at 150 K, which is equivalent to an atomic displacement damage of 5.5 and 11.0 dpa, respectively. The spinel crystal structure was thermally recovered at room temperature from the amorphous phase caused by irradiation at 50 K. The calculated electronic and nuclear stopping powers suggest that the radiation damage caused by 1 MeV Kr²⁺ ions in Mg₂SnO₄ is mainly due to atomic displacement induced defect accumulation. The radiation tolerance of Mg₂SnO₄ was finally compared with normal spinel MgAl₂O₄.     

Thermoelectric power studies of ferromagnet U2ScB6C3

The thermoelectric power (TEP) of a ferromagnet U₂ScB₆C₃ (T_C = 61 K) has been measured in the temperature range 5-300 K. The TEP is positive over the whole measured temperature range and reaches a relatively large value at room temperature of 29 μV/K. Below 30 K and above 200 K the TEP follows a straight line S(T) ∼AT, with slope of 0.23 and 0.085 μV/K², respectively. The change in the slope can be explained by the electron-phonon interaction renormalization effects or spin-reorientation associated with a change in the electronic structure. Analysing the temperature dependence of the ratio [S(T)/T]/[S_300 K/300] and taking into account the specific heat data, we suggest that spin fluctuations are another important factor in determining the thermoelectric power behaviour of U₂ScB₆C₃.     

Swelling and optical properties of Si3N4 films irradiated in the electronic regime

Silicon nitride layers of 140 nm thickness were deposited on silicon wafers by low pressure chemical vapour deposition (LPCVD) and irradiated at GANIL with Pb ions of 110 MeV up to a maximum fluence of 4 × 10¹³ cm⁻². As shown in a previous work these irradiation conditions, characterized by a predominant electronic slowing-down (S_e = 19.3 keV nm⁻¹), lead to damage creation and formation of etchable tracks in Si₃N₄. In the present study we investigated other radiation-induced effects like out of plane swelling and refractive index decrease. From profilometry, step heights as large as 50 nm were measured for samples irradiated at the highest fluences (>10¹³ cm⁻²). From optical spectroscopy, the minimum reflectivity of the target is shifted towards the high wavelengths at increasing fluences. These results evidence a concomitant decrease of density and refractive index in irradiated Si₃N₄. Additional measurements, performed by ellipsometry, are in full agreement with this interpretation.     

Effect of 200 MeV Ag ion irradiation on structural and electrical transport properties of Fe3O4 thin films

Thin films of Fe₃O₄ have been deposited on single crystal MgO(1 0 0) and Si(1 0 0) substrates using pulsed laser deposition. Films grown on MgO substrate are epitaxial with c-axis orientation whereas, films on Si substrate are highly 〈1 1 1〉 oriented. Film thicknesses are 150 nm. These films have been irradiated with 200 MeV Ag ions. We study the effect of the irradiation on structural and electrical transport properties of these films. The fluence value of irradiation has been varied in the range of 5 × 10¹⁰ ions/cm² to 1 × 10¹² ions/cm². We compare the irradiation induced modifications on various physical properties between the c-axis oriented epitaxial film and non epitaxial but 〈1 1 1〉 oriented film. The pristine film on Si substrate shows Verwey transition (T_V) close to 125 K, which is higher than generally observed in single crystals (121 K). After the irradiation with the 5 × 10¹⁰ ions/cm² fluence value, T_V shifts to 122 K, closer to the single crystal value. However, with the higher fluence (1 × 10¹² ions/cm²) irradiation, T_V again shifts to 125 K.     

Test irradiations of full-sized U3Si2-Al fuel plates up to very high fission densities

In the course of the licensing procedure of the ‘Forschungsneutronenquelle Heinz Maier-Leibnitz’, i.e. the new 20 MW high-flux research reactor FRM II in Garching near Munich, extensive test irradiations have been performed to qualify the U₃Si₂-Al dispersion fuel with a relatively high density of highly enriched uranium (93 wt% of ²³⁵U) up to very high fission densities. Two of the three FRM II type fuel plates used in the irradiation tests contained U₃Si₂-Al dispersion fuel with HEU densities of 3.0 gU/cm³ or 1.5 gU/cm³ (‘homogeneous plates’) and one plate had two adjacent zones of either density (‘mixed plate’). They were irradiated in the French MTR reactors SILOE and OSIRIS in the years before 2002. The local plate thickness was measured on certain tracks along the plates during interruptions of the irradiation. The maximum fission density obtained in the U₃Si₂ fuel particles was 1.4 × 10²² f/cm³ and 1.1 × 10²² f/cm³ in the 1.5 gU/cm³ and 3.0 gU/cm³ fuel zones, respectively. In the course of the irradiations, the plate thickness increased monotonically and approximately linearly, leading to a maximum plate thickness swelling of 14% and 21% and a corresponding volume increase of the fuel particles of 106% and 81%, respectively. Our results are discussed and compared with the data from the literature.     

Optical properties of InxGa1−xP/InP grown at high fluence Ga implantation on InP using focused ion beam

Single-crystalline InP(1 0 0) substrate was implanted by 30 keV Ga⁺ ions with fluences of 1 × 10¹⁶-1.5 × 10¹⁷ cm⁻² followed by post-annealing treatment at 750 °C to recover implantation-induced structural defects and activate dopants into the lattices. The optical property, composition, and microstructure of the Ga⁺-implanted InP were studied by Raman spectroscopy and transmission electron microscopy (TEM). Raman spectra show that the In_xGa_1−xP phase is formed at a critical fluence of 7 × 10¹⁶ cm⁻². The newly grown phase was identified with the appearance of Ga rich TO_InP and In rich TO_GaP modes of a random alloy in the 1 bond-2 phonon mode configuration along with TEM structural identification.