Electrical and photoelectric properties of electrodeposited <Emphasis Type="Italic">n</Emphasis>-Si/<Emphasis Type="Italic">n</Emphasis>-Cd<Subscript>1 - <Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>x</Subscript>S heterojunctions

n-Si/n-Cd_{1 - x} Zn_xS heterojunctions are produced by electrodepositing Cd_{1 - x} Zn_xS (0 x 0.6) films on silicon substrates, and their electrical and photoelectric properties are studied. The results demonstrate that the spectral response of the heterojunctions depends strongly on the film composition and heat-treatment conditions. The highest photosensitivity is achieved at x = 0.6 by heat treatment at 350°C for 7 min: V _OC = 0.5 V and I _SC = 3.8 mA/cm² under illumination of 1500 lx at 300 K.Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 276–280.Original Russian Text Copyright © 2005 by Mamedov, Gasanov, Amirova.This revised version was published online in April 2005 with a corrected cover date.This revised version was published online in April 2005 with a corrected cover date.     

Impact-ionization-stimulated electroluminescence in isotype <Emphasis Type="Italic">n</Emphasis>-GaSb/<Emphasis Type="Italic">n</Emphasis>-AlGaAsSb/<Emphasis Type="Italic">n</Emphasis>-GaInAsSb heterostructures

We have studied electroluminescence in n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures with isotype heterojunctions, in which the quantum efficiency of emission is increased due to the additional production of electron-hole pairs as a result of the impact ionization that takes place near the heterointerface. The impact ionization in such heterostructures is possible due to the presence of deep wells in the energy band structure.     

Long-wavelength photodiodes based on <Emphasis Type="Italic">n</Emphasis>-GaSb/<Emphasis Type="Italic">n</Emphasis>-GaInAsSb/<Emphasis Type="Italic">p</Emphasis>-AlGaAsSb heterostructures

Photodiodes sensitive in the wavelength ranges 1–2.5 μm and 1–4.8 μm at room temperature have been created on the basis of n-GaSb/n-GaInAsSb/p-AlGaAsSb double-junction heterostructures of two types. The broadband photosensitivity of the diode structures of both types is indicative of the complete separation of photogenerated electron-hole pairs in the staggered n-p heterojunction (n-GaInAsSb/p-AlGaAsSb). The noise characteristics of photodetectors based on the proposed diode structures have been studied. Prospects of the use of these devices in thermophotovoltaic cells for low-temperature radiation sources are considered.     

Photoacoustic Studies of Cd<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>Be<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se Mixed Crystals

This paper reports the results of photoacoustic measurements of Cd_1-xBe_xSe mixed crystals grown by the high pressure Bridgman method with varying concentrations of Be (0.1 < x < 0.2). For examining continuous wave photoacoustic spectra, a piezoelectric transducer (PZT) and an open cell were used. An increase of the energy gap with increasing x has been observed. The thermal diffusivity values were estimated using the dependence of the amplitude and phase of the PA signal on the light modulation frequency.Paper presented at the Fifteenth Symposium on Thermophysical Properties, June 22–27, 2003, Boulder, Colorado, U.S.A.     

Thermodynamic modeling of BC<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> chemical vapor deposition from mixtures of <Emphasis Type="Italic">N</Emphasis>-trimethylborazine and nitrogen

Thermodynamic modeling of the chemical vapor deposition of boron-carbonitride-based films in the B-C-N-H-O system using mixtures of N-trimethylborazine and nitrogen is carried out for reduced pressures (13.3 and 1.33 Pa) and a wide temperature range (300–1300 K). The source of oxygen impurities in this system is a residual pressure of 0.40 Pa. The results indicate that films of various compositions can be grown. The conditions for the deposition of BC _x N _y films are identified.     

Synthesis and properties of Na<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>CoO<Subscript>2</Subscript> (<Emphasis Type="Italic">x</Emphasis> = 0.55, 0.89) oxide thermoelectrics

Na_xCoO₂ (x = 0.55, 0.89) sodium cobaltites have been prepared by solid-state reactions; their structural parameters have been determined; their microstructure has been studied; and their thermal (thermal expansion, thermal diffusivity, and thermal conductivity), electrical (electrical conductivity and thermoelectric power), and functional (power factor, thermoelectric figure of merit, and self-compatibility factor) properties have been investigated in air at temperatures from 300 to 1100 K. The results demonstrate that, with increasing sodium content, the electrical conductivity and thermoelectric power of the materials increase and their thermal conductivity decreases. As a result, the power factor and thermoelectric figure of merit of the Na_0.89CoO₂ ceramic at a temperature of 1100 K reach 0.829 mW/(m K²) and 1.57, respectively. The electron and phonon (lattice) contributions to the thermal conductivity of the ceramics have been separately assessed, and their linear thermal expansion coefficients have been evaluated.     

Effect of a thin <Emphasis Type="Italic">a</Emphasis>-SiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>: H film on plasmonic properties of gold nanoparticles

Data on the optical properties of a nanocomposite material constituted by gold nanoparticles covered with a thin film of amorphous hydrogenated silicon suboxide have been obtained for the first time. The thin film was deposited by gas-jet electron-beam plasma chemical-vapor deposition. As gold particles situated on the surface of quartz glass are covered with a thin a-SiO _x : H film, their plasmonic resonance peak is shifted to longer wavelengths. The calculations made in the study demonstrated a good agreement with the experiment.     

The Activation Energy <Emphasis Type="Italic">U</Emphasis>(<Emphasis Type="Italic">T</Emphasis>,<Emphasis Type="Italic">H</Emphasis>) in Y-based Superconductors

Based on the Arrhenius equation, a method to calculate the activation energy from the resistance transition is proposed for high temperature superconductors. This method is applied to the Y-based superconductors. The activation energy is found to be U(T,H)∼(1−T/T _c )^4.8(H/H ₀)^−3.8 of YBCO crystal, and U(T,H)∼(1−T/T _c )^3.3(H/H ₀)^−2.2 of Er doped MTG YBCO crystal, respectively. With the obtained activation energy U(T,H), the lower part of the experimental curve ρ(T,H) and its derivative can be reproduced.      

Facile fabrication of NiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>H<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> films and their unique electrochromic properties

The electrochromic (EC) NiO _x H _y films were fabricated through a facile sol–gel method. The formation of high quality NiO _x H _y films came from adding the xerogel back into the sol and prolonging the annealing time at gradually increasing temperature up to 250 °C. Scanning electron microscopy and atomic force microscopy characterizations indicated films were compact, homogenous, and smooth. Glance angle X-ray diffraction investigation testified NiO _x H _y films were of poor crystallization. The Fourier transform infrared, and thermogravimetry and differential thermal analysis showed that films contained the mixture of NiO, Ni(OH)₂, NiOOH, water, and organic substance. With the increasing of the xerogel ratio, the optical absorbance and reflectance of films had larger differences between the colored and bleached state, respectively. The film with the xerogel ratio of 1:5 showed excellent EC properties with a transmittance contrast as high as 60.88% at λ = 560 nm, which was higher than other sol–gel nickel oxide films reported.     

Y-junction bamboo-like CN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> nanotubes

The method for the production of multiwall Y-junction bamboo-like CN _x nanotubes by the resistive heating of graphite is described. Different branched bamboo-like CN _x nanotubes have been observed. The possible mechanism of the formation of branched nanotubes is proposed.     

Synthesis and microwave dielectric properties of Zn<Subscript>1+<Emphasis Type="Italic">x</Emphasis></Subscript>Nb<Subscript>2</Subscript>O<Subscript>6+<Emphasis Type="Italic">x</Emphasis></Subscript>

We have studied the formation of zinc niobate, ZnNb₂O₆, with the columbite structure and the microstructure and microwave dielectric properties of Zn_1+x Nb₂O_6+x ceramics. The results demonstrate that, in the range 0.005 ≤ x ≤ 0.03, the excess zinc reduces the porosity of the material and increases its microwave quality factor Q. For x ≥ 0.03, the Q of the ceramics decreases because of the formation of an additional, zinc-enriched phase. Sintering in an oxygen atmosphere is shown to improve the dielectric properties of stoichiometric ZnNb₂O₆.     

Speed of sound in <Emphasis Type="Italic">n</Emphasis>-hexane, <Emphasis Type="Italic">n</Emphasis>-octane, <Emphasis Type="Italic">n</Emphasis>-decane,and <Emphasis Type="Italic">n</Emphasis>-hexadecane in the liquid state

This paper describes an improved experimental facility for measuring the speed of sound in liquids with an accuracy of up to 0.1%. Measurements of the speed of sound in liquid n-hexane, n-octane, n-decane, and n-hexadecane at temperatures of 298–433 K and pressures of 0.1–100 MPa have been made. It has been shown that in the possible comparison range the obtained values of the speed of sound are in good agreement with the literature data. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 81, No. 4, pp. 732–736, July–August, 2008.     

Optical,Structural, and Photocarrier Studies of Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>(CdTe)<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>O<Subscript><Emphasis Type="Italic">z</Emphasis></Subscript> Thin Films

In this research quaternary alloy thin films made of Cu, CdTe, and O have been grown and characterized. The samples used in this investigation were grown simultaneously by reactive RF co-sputtering and by introducing oxygen and argon in the chamber during growth and changing the power in the Cu target from 10 W to 50 W. The carrier distribution as a function of the position was studied by using energy dispersive spectroscopy–scanning electronic microscopy (EDS–SEM), micro-Raman spectroscopy, and photocarrier images. Structural characterization was carried out by using X-ray diffraction. According to the results, a lateral carrier distribution was found in all samples and a new phase identified as Cu₂Te was revealed for samples grown at 50 W.     

Investigation of mechanical and superconducting properties of iron diffusion-doped <Emphasis Type="Italic">Bi</Emphasis>-<Emphasis Type="Italic">2223</Emphasis> superconductors

The mechanical and superconducting properties of the Fe diffusion-doped (Bi-Pb)-2223 superconductor have been investigated. First, iron was evaporated on Bi-2223 superconductor and then the Fe layered superconductor was annealed at 830 °C for 10, 30 and 60 h. Static Vickers hardness, dc electrical resistivity, X-ray diffraction and scanning electron microcopy have been carried out to assess the effects of Fe doping. These measurements indicates that Fe doping, in comparison with the undoped samples, increased the critical transition temperature, and improved formation of high T _c phase, while decreasing the number and size of voids. Moreover, both microhardness and grain size were also enhanced by increasing the amount of diffusion. The values of microhardness were found to be load dependent. In addition, we have investigated the indentation size effect (ISE) behavior using some models such as the Kick’s law, modified proportional specimen resistance (MPRS) model and the Hays- Kendall (HK) approach. Among them, both HK and MPRS models are successful. In this study, the possible reasons of noticed improvement on mechanical and physical properties due to iron diffusion are discussed.     

Influence of graded interfaces on the exciton energy of type-I and type-II Si/Si<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript> Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> quantum wires

The exciton properties of Si/Si _1-x Ge _x cylindrical quantum wires (QWRs) are calculated using the variational method and taking into account the existence of an interface layer between the materials. We consider two possibilities for the conduction band lineup, type-I and type-II. Our numerical results show that an interfacial fluctuation of 15Å in a Si _0.85 Ge _0.15 (Si_0.70Ge_0.30) type-I (type-II) wire of 50Å wire radius leads to an exciton energy blue shift of the order of 10 (10) meV.     

Synthesis of nanostructured Pt<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ni/C and Pt<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Co/C catalysts and their activity in the reaction of oxygen electroreduction

Nanostructured Pt _x Ni/C and Pt _x Co/C catalysts (1 ≤ x ≤ 3) containing from 27 to 40 wt % of metal with the average size of metal (alloy) particles from 2.6 to 4.7 nm are obtained using the methods of liquid-phase synthesis. Addition of a doping component is found to yield a decrease in the average nanoparticle sizes and an improved activity of materials in oxygen electroreduction reactions. The obtained catalysts are characterized by high specific activity as compared to commercial Pt/C materials. The stability of electrocatalysts to selective dissolution of the doping component is evaluated.     

Project of laser-pumped quantum <Emphasis Type="Italic">M</Emphasis><Subscript><Emphasis Type="Italic">X</Emphasis></Subscript> magnetometer

The possibility of creating a new scheme of a laser-pumped quantum magnetometric device based on a double-beam M _X magnetometer is considered. The proposed system ensures the simultaneous measurement of the modulus of the Earth’s magnetic field vector (with an absolute accuracy of 0.02 nT) and two angles of deviation of this vector with an absolute accuracy and sensitivity of not worse than 0.4″ (0.1 nT) at a measurement time of τ = 1 s. In contrast to the known analogous systems, the proposed scheme does not require generating additional magnetic fields.     

Synthesis,growth, optical,mechanical and electrical properties of <Emphasis Type="Italic">L</Emphasis>-lysine <Emphasis Type="Italic">L</Emphasis>-lysinium dichloride nitrate (<Emphasis Type="Italic">L</Emphasis>-LLDN) single crystal

Semi-organic nonlinear optical material, L-lysine L-lysinium dichloride nitrate (2C₆H₁₅N₂O₂⁺_{2}^{+} · H⁺ · NO₃^-_{3}^{-} · 2Cl⁻) was synthesized at room temperature. Single crystals of L-LLDN were grown by slow cooling solution growth technique. The grown crystal was confirmed by powder X-ray diffraction analysis. The crystalline perfection of the grown single crystal was characterized by high-resolution X-ray diffraction (HRXRD) studies. The cut-off wavelength was determined by UV-vis transmission spectral analysis. The frequency doubling of the grown crystal was confirmed by powder second harmonic generation (SHG) measurement. The refractive index and birefringence of the crystal were determined using He–Ne laser source. Mechanical property of the crystal was determined by Vickers hardness tester. The frequency and temperature dependence of dielectric constant (ε _r), dielectric loss (tan δ) and a.c. conductivity (σ _ac) were also measured.     

Synthesis and characterization of <Emphasis Type="Italic">n</Emphasis>-ZnO:Al/CoPc/<Emphasis Type="Italic">p</Emphasis>-Si structures

Photosensitive structures of the n-ZnO:Al/CoPc/p-Si type were synthesized for the first time using vacuum sublimation of cobalt phthalocyanine (CoPc) and magnetron sputtering of a ZnO:Al target. The maximum photoresponse is observed when the structure is illuminated from the side of the ZnO layer and amounts to ?400 V/W at T = 300 K. Mechanisms of current transfer and peculiarities of the photosensitivity spectrum are considered. It is suggested that the new photosensitive structures can be used in multiband photoconverters of natural radiation with a broad working spectral range.     

Nernst Signal in High-<Emphasis Type="Italic">T</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> Superconductors

The time-dependent Ginzburg–Landau equation with thermal noise is used to calculate the Nernst signal e _N , describing the Nernst effect, in type-II superconductor in the vortex-liquid regime. The Gaussian method used is an elaboration of the Hartree–Fock method. An additional assumption often made in analytical calculations that only the lowest Landau level significantly contributes to physical quantities of interest in the high-field limit is lifted by including all the Landau levels. The values of e _N are in good quantitative agreement with experimental data for temperature close to T _c on Bi₂Sr₂CaCu₂O_8+δ and Bi₂Sr₂Ca₂Cu₃O_10+δ .