过渡金属掺杂单层MoS_2的第一性原理计算

利用基于密度泛函理论的第一性原理平面波赝势方法分别计算了本征及过渡金属掺杂单层MoS_2的晶格参数、电子结构和光学性质。计算结果显示,过渡金属掺杂所引起的晶格畸变与杂质原子的共价半径有联系,但并不完全取决于共价半径的大小。分析能带结构可以看到,Co、Ni、Cu、Tc、Re和W掺杂使能带从直接带隙变成了间接带隙。除了Cr和W以外,其它掺杂体系的禁带区域都出现了数目不等的新能级,这些杂质能级主要由杂质的d、S的3p和Mo的4d轨道组成。掺杂对MoS_2的光学性质也产生了相应的影响,使MoS_2的静态介电常数、介电函数虚部峰值、折射率和光电导率峰值呈现不同程度的增加。     

S、Mn共掺杂锐钛矿相TiO2电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势方法研究了纯锐钛矿相TiO2,S、Mn分别单掺杂及共掺杂TiO2的晶体结构、杂质形成能、电子结构、光学性质和带边位置。计算结果表明,掺杂后TiO2的晶格发生畸变,原子间的键长、原子的电荷量以及晶体体积都发生变化,导致晶体中八面体偶极矩增大,从而有利于光生电子-空穴对的分离;S掺杂在TiO2的价带顶部形成杂质能级,Mn掺杂在TiO2的导带下方和费米能级附近形成杂质能级,共掺杂后TiO2禁带宽度变窄,光学吸收带边发生红移,TiO2在可见光区有明显的吸收;同时S、Mn共掺杂后TiO2的带边位置发生了明显变化,氧化还原能力增强,有利于提高光催化效率     

不同浓度硼掺杂石墨烯吸附多层金原子的第一性原理研究

石墨烯与金属间过高的接触电阻严重影响了其在微纳电子领域的应用,B掺杂可以有效降低石墨烯的接触电阻。利用第一性原理研究了不同浓度B掺杂对石墨烯吸附多层Au原子的影响。首先计算了不同浓度B掺杂石墨烯的结合能,验证了掺杂石墨烯的稳定性;然后对掺杂石墨烯进行了结构优化并在其表面置入多层Au原子,计算了吸附模型的吸附能、赝能隙、局部态密度、电荷密度分布和电荷转移量。B掺杂浓度分别为1.39%,4.17%,6.94%,9.72%,12.50%和15.28%。结果表明:随着B掺杂浓度的提高,石墨烯吸附多层Au原子体系的赝能隙变宽,吸附能增加,结构稳定性得到提升;B原子与Au原子间杂化作用明显,具有较高的电荷密度和电荷转移量,可有效地降低石墨烯与多层Au原子间的接触电阻;但掺杂浓度为15.28%时,由于浓度过高吸附模型中石墨烯几何结构变形过大。     

S和La共掺杂对锐钛矿相TiO_2微观结构和性能的影响

基于密度泛函理论的第一性原理平面波超软赝势方法研究了纯TiO2、S和La分别单掺杂及共掺杂锐钛矿相TiO2的晶体结构、电子结构、光学性质及带边位置,结果表明,S掺杂后TiO2的晶格常数、原子间的键长和原子电荷都发生了变化,导致掺杂后的八面体偶极矩增加,从而有利于光生电子-空穴对的分离,提高TiO2的光催化性能;S掺杂TiO2禁带中出现杂质能级,从而将TiO2的光谱响应红移至可见光区;La掺杂TiO2杂质能级出现在导带而非禁带中,带隙有所减小,吸收光谱的阈值波长发生了一定的红移;而S、La共掺杂TiO2的光谱响应范围向可见光区明显拓展,且氧化还原能力增强,因此S、La共掺杂可显著提高TiO2光催化性能。     

S和Al掺杂单层g-C3N4电子结构与光学性质的第一性原理研究

g-C₃N₄是一种典型的聚合物半导体材料，在可见光下就能完成对半导体要求较高的光催化反应。采用基于密度泛函理论的第一性原理平面波超软赝势方法研究了单层g-C₃N₄、S单掺g-C₃N₄、Al单掺g-C₃N₄和S-Al共掺g-C₃N₄的形成能、电子结构及光学性质。结果表明：S掺杂空隙I位置、Al掺杂N2位置时，杂质原子最易掺入g-C₃N₄体系。与单层g-C₃N₄相比，掺杂后的体系均发生了晶格畸变以及红移现象，拓展了体系的光吸收范围，可推测出S、Al掺杂能够提高g-C₃N₄体系的光催化性。其中，S-Al共掺杂体系的光催化性是最优的，原因是共掺杂体系的分子轨道有较强的离域性，有利于提高载流子的迁移率，并且共掺杂能使单掺杂引入的深能级变浅，减少杂质能...     

非金属阳离子掺杂锐钛矿相TiO2的第一性原理研究

采用基于第一性原理的平面波超软赝势方法研究了非金属阳离子掺杂锐钛矿相TiO2的晶体结构、杂质形成能、电子结构及光学性质.计算结果表明掺杂后发生的晶格畸变、原子间的键长及原子的电荷量的变化,导致了晶体中的八面体偶极矩增大,使光生电子-空穴对能有效分离; 掺杂离子的p态电子与O2p态、Ti3d态杂化形成杂质能级、价带宽化,从而导致TiO2的禁带宽度变窄、光吸收曲线红移到可见光区.这些计算结果很好地解释了非金属阳离子掺杂锐钛矿相TiO2在可见光下具有优良的光催化性能的内在原因.     

Zr和Mo双掺杂γ-TiAl基合金的稳定性与延性预测

采用基于密度泛函理论的第一性原理方法,计算研究了Zr和Mo原子双掺杂γ-TiAl合金体系的几何结构、总能量、原子平均形成能、弹性性质、电荷密度分布和布居数。通过对形成能的计算和分析,预测各双掺杂体系均具有能量稳定性,并且Zr原子始终倾向于替代Ti原子,Mo原子的替代倾向不明显。通过对轴比、弹性模量比、电荷密度分布、电荷布居数以及重叠布居数的综合分析,发现Ti_(11)ZrAl_(11)Mo和Ti_(11)MoAl_(11)Zr体系的延性相比纯γ-TiAl体系均有较大改善,并且双掺杂体系的改善效果较单掺杂更为突出。根据弹性模量比和布居数的分析结果预测,Ti_(12)Al_(10)ZrMo可能是一种延性较好的材料。     

Al和S共掺杂金红石型TiO2第一性原理研究

利用密度泛函理论体系下的第一性原理平面波超软赝势法,研究Al单掺杂和S单掺杂以及Al/S共掺杂金红石相TiO_2的能带结构、态密度和光学性质。结果表明:Al单掺杂导致禁带宽度减小为1.79eV,并且在价带上方形成了一条杂质能带;S单掺杂导致费米能级上移靠近导带,直接带隙减小为0.816eV;Al/S共掺杂导致能带结构中出现了3条杂质能带,直接带隙约0.841eV,杂质能级主要由Al原子的3p轨道和S原子的3p轨道组成。Al/S共掺杂后使TiO_2的吸收带产生红移,在可见光区具有较大的吸收系数,能够增强电子传输能力和抑制电子空穴对复合。     

空位缺陷对单层MoS2力学性能的影响

利用经典分子动力学方法,通过对单层MoS_2力学行为进行单轴拉伸仿真模拟,研究空位缺陷对结构力学性能的影响。结合第一性原理计算,初步探索了单层MoS_2的宏观力学行为与其微观电子结构变化的关联影响。模拟结果表明:空位缺陷使单层MoS_2的力学性能严重劣化,且其影响程度随空位缺陷类型的不同而存在差异,与V_S相比,V_(S2)对上述力学性能的影响更为显著,浓度为0.4%的V_S及V_(S2)缺陷可使MoS_2断裂极限下降10%和23%,且降幅随缺陷浓度的增加而增加。此外,单轴拉伸与V_S、V_(S2)等空位缺陷的存在,均可显著降低单层MoS_2的禁带宽度,这可能与拉伸和空位缺陷均能引起Mo-d和S-p轨道杂化强度与Mo-S键键强的减弱有关。     

缺陷对RRAM材料阻变机理的影响

基于密度泛函理论(DFT)的第一性原理和VASP仿真软件,分析了阻变随机存储器(RRAM)阻变效应的物理机制。对比计算了单斜晶相HfO2中Ag掺杂体系、氧空位缺陷体系和Ag及氧空位缺陷共掺杂复合缺陷体系的能带、态密度、分波电荷态密度面和形成能,结果表明在相同浓度下Ag掺杂体系能形成导电通道,而氧空位缺陷体系不能形成导电通道;共掺杂体系中其阻变机制以Ag传导为主,氧空位缺陷为辅,且其形成能变小,体系更加稳定。计算共掺杂体系的布居数和迁移势垒,得出在氧空位缺陷存在的前提下,Ag—O键长明显增加,Ag离子的迁移势垒变小,电化学性能增强。进一步计算了缺陷间的相互作用能,其值为负,表明缺陷间具有相互缔合作用,体系更加稳定。     

离子束辅助沉积MoS2复合膜的XPS和ESR特性分析

通过IBAD技术制备了MoS2 Ag(Cu)复合膜 ,并利用XPS和ESR考察了复合膜的氧化情况。发现在RH为 6 0 %的大气环境下 ,Cu的掺入加速了MoS2 的氧化 ,相反Ag的加入却使MoS2 的氧化受到抑制 ;XPS发现MoS2 Cu复合膜中存在Mo6 ,ESR却并没发现中间态Mo5 ;而XPS没有检测到MoS2 Ag膜中有Mo6 ,ESR却发现Mo5 。这说明Mo5 受化学环境影响较大     

Quasi-freestanding,striped WS2 monolayer with an invariable band gap on Au(001)

Revealing the structural/electronic features and interfacial interactions of monolayer MoS2 and WS2 on metals is essential to evaluating the performance of related devices.In this study,we focused on the atomic-scale features of monolayer WS2 on Au(001) synthesized via chemical vapor deposition.Scanning tunneling microscopy and spectroscopy reveal that the WS2/Au(001) system exhibits a striped superstructure similar to that of MoS2/Au(001) but weaker interfacial interactions,as evidenced by experimental and theoretical investigations.Specifically,the WS2/Au(001) band gap exhibits a relatively intrinsic value of ～ 2.0 eV.However,the band gap can gradually decrease to ～ 1.5 eV when the sample annealing temperature increases from ～370 to 720 ℃.In addition,the doping level (or Fermi energy) of monolayer WS2/Au(001) varies little over the valley and ridge regions of the striped patterns because of the homogenous distributions of point defects introduced by annealing.Briefly,this work provides an in-depth investigation into the interfacial interactions and electronic properties of monolayer MX2 on metal substrates.     

Thermal conduction across the one-dimensional interface between a MoS<Subscript>2</Subscript> monolayer and metal electrode

The thermal conductance across the one-dimensional (1D) interface between a MoS2 monolayer and Au electrode (edge-contact) has been investigated using molecular dynamics simulations.Although the thermal conductivity of monolayer MoS2 is 2-3 orders of magnitude lower than that of graphene,the covalent bonds formed at the interface enable interfacial thermal conductance (ITC) that is comparable to that of a graphene-metal interface.Each covalent bond at the interface serves as an independent channel for thermal conduction,allowing ITC to be tuned linearly by changing the interfacial bond density (controlling S vacandes).In addition,different Au surfaces form different bonding configurations,causing large ITC variations.Interestingly,the S vacancies in the central region of MoS2 only slightly affect the ITC,which can be explained by a mismatch of the phonon vibration spectra.Further,at room temperature,ITC is primarily dominated by phonon transport,and electron-phonon coupling plays a negligible role.These results not only shed light on the phonon transport mechanisms across 1D metal-MoS2 interfaces,but also provide guidelines for the design and optimization of such interfaces for thermal management in MoS2-based electronicdevices.     

Light‐Emitting Diodes with Cu‐Doped Colloidal Quantum Wells: From Ultrapure Green,Tunable Dual‐Emission to White Light

Copper‐doped colloidal quantum wells (Cu‐CQWs) are considered a new class of optoelectronic materials. To date, the electroluminescence (EL) property of Cu‐CQWs has not been revealed. Additionally, it is desirable to achieve ultrapure green, tunable dual‐emission and white light to satisfy the various requirement of display and lighting applications. Herein, light‐emitting diodes (LEDs) based on colloidal Cu‐CQWs are demonstrated. For the 0% Cu‐doped concentration, the LED exhibits Commission Internationale de L'Eclairage 1931 coordinates of (0.103, 0.797) with a narrow EL full‐wavelength at half‐maximum of 12 nm. For the 0.5% Cu‐doped concentration, a dual‐emission LED is realized. Remarkably, the dual emission can be tuned by manipulating the device engineering. Furthermore, at a high doping concentration of 2.4%, a white LED based on CQWs is developed. With the management of doping concentrations, the color tuning (green, dual‐emission to white) is shown. The findings not only show that LEDs with CQWs can exhibit polychromatic emission but also unlock a new direction to develop LEDs by exploiting 2D impurity‐doped CQWs that can be further extended to the application of other impurities (e.g., Mn, Ag).     

Photocatalytic decomposition of methylene blue via Fenton mechanisms by silicon wafer doped with Au and Cu: a theoretical and experimental study

In this work, we studied the photocatalytic and the structural aspects of silicon wafers doped with Au and Cu submitted to thermal treatment. The materials were obtained by deposition of metals on Si using the sputtering method followed by fast heating method. The photocatalyst materials were characterized by synchrotron-grazing incidence X-ray fluorescence, ultraviolet-visible spectroscopy, X-ray diffraction, and assays of H₂O₂ degradation. The doping process decreases the optical band gap of materials and the doping with Au causes structural changes. The best photocatalytic activity was found for thermally treated material doped with Au. Theoretical calculations at density functional theory level are in agreement with the experimental data.     

Temperature‐Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures

The existence of defects in 2D semiconductors has been predicted to generate unique physical properties and markedly influence their electronic and optoelectronic properties. In this work, it is found that the monolayer MoS₂ prepared by chemical vapor deposition is nearly defect‐free after annealing under ultrahigh vacuum conditions at ≈400 K, as evidenced by scanning tunneling microscopy observations. However, after thermal annealing process at ≈900 K, the existence of dominant single sulfur vacancies and relatively rare vacancy chains (2S, 3S, and 4S) is convinced in monolayer MoS₂ as‐grown on Au foils. Of particular significance is the revelation that the versatile vacancies can modulate the band structure of the monolayer MoS₂, leading to a decrease of the bandgap and an obvious n‐doping effect. These results are confirmed by scanning tunneling spectroscopy data as well as first‐principles theoretical simulations of the related morphologies and the electronic properties of the various defect types. Briefly, this work should pave a novel route for defect engineering and hence the electronic property modulation of three‐atom‐thin 2D layered semiconductors.     

Comparison of electronic structures of doped ZnS and ZnO calculated by a first-principle pseudopotential method

Electronic band calculations of doped and undoped ZnO and ZnS have been done using density functional theory under the local density approximation so as to clarify the reason of the difference in behaviors of doped ZnO and ZnS. The reason why the electrical conductivity of ZnS is difficult to be increased by doping was discussed. In the case of doped ZnS, an impurity level was generated at deep position below the bottom of the conduction band of the host ZnS lattice and Fermi level was located at this impurity level. On the contrary, the shape of the density of states curve and the band structures of doped and undoped ZnO are alike with each other and the donor band is hybridized with the conduction band of the ZnO host material. This seems to result in contribution of doped electrons to electrical current in the case of doped ZnO.     

First-principles study of silicon nanocrystals: structural and electronic properties, absorption, emission, and doping

Total energy calculations within the Density Functional Theory have been carried out in order to investigate the structural, electronic, and optical properties of un-doped and doped silicon nanostructures of different size and different surface terminations. In particular the effects induced by the creation of an electron-hole pair on the properties of hydrogenated silicon nanoclusters as a function of dimension are discussed in detail showing the strong interplay between the structural and optical properties of the system. The distortion induced on the structure by an electronic excitation of the cluster is analyzed and considered in the evaluation of the Stokes shift between absorption and emission energies. Besides we show how many-body effects crucially modify the absorption and emission spectra of the silicon nanocrystals. Starting from the hydrogenated clusters, different Si/O bonding at the cluster surface have been considered. We found that the presence of a Si--O--Si bridge bond originates significative excitonic luminescence features in the near-visible range. Concerning the doping, we consider B and P single- and co-doped Si nanoclusters. The neutral impurities formation energies are calculated and their dependence on the impurity position within the nanocrystal is discussed. In the case of co-doping the formation energy is strongly reduced, favoring this process with respect to the single doping. Moreover the band gap and the optical threshold are clearly red-shifted with respect to that of the pure crystals showing the possibility of an impurity based engineering of the absorption and luminescence properties of Si nanocrystals.     

Effect of doping on structural and optical properties of ZnO nanoparticles: study of antibacterial properties

Sol-gel method was successfully used for synthesis of ZnO nanoparticles doped with 10 % Mg or Cu. The structure, morphology and optical properties of the prepared nanoparticles were studied as a function of doping content. The synthesized ZnO:(Mg/Cu) samples were characterized using XRD, TEM, FTIR and UV-Vis spectroscopy techniques. The samples show hexagonal wurtzite structure, and the phase segregation takes place for Cu doping. Optical studies revealed that Mg doping increases the energy band gap while Cu incorporation results in decrease of the band gap. The antibacterial activities of the nanoparticles were tested against Escherichia coli (Gram negative bacteria) cultures. It was found that both pure and doped ZnO nanosuspensions show good antibacterial activity which increases with copper doping, and slightly decreases with adding Mg.     

The ion implantation of ZnS

The properties of ZnS single crystals doped by the Ag ion implantation (an acceptor) and zinc (a donor) were investigated. The annealing of the Ag doped samples in H₂ resulted in an occurrence of the “silver” luminescence centres with the photoluminescence maximum at 454 nm. The doped layer depth is ～500Å at the ion energy of 45 keV. At the annealing of the samples in the S and ZnS vapours the doped layer acquires the p-type conductivity. The doping of n-type ZnS crystals by Zn ions increases their conductivity. At the smooth decrease in the ion beam energy the “ohmic” contact is obtained on the samples.