Electrical characterization of benzocyclobutene polymers for electric micromachines

An approach using interdigitated capacitors for electrical characterization of CYCLOTENE, a spin-on low-k benzocyclobutene (BCB)-based polymer is introduced and the effect of moisture uptake is investigated. The dielectric constant of CYCLOTENE is extracted from capacitance measurements with a systematic error less than 0.1%, giving an average value of 2.49 with a standard deviation of 1.5%. The dielectric constant increases by 1.2% after a humidity stress of 85% RH at 85/spl deg/C. The I-V characteristics of CYCLOTENE show a dependency of breakdown strength and leakage current on the geometrical dimensions of the device under test. A breakdown strength of 225V//spl mu/m and 320 V//spl mu/m for 2-/spl mu/m and 3-/spl mu/m finger spacing, respectively, and a leakage current of a few to tens of pA are measured. The I-V characteristics degrade drastically after the humidity stress, showing a breakdown strength of 100 V//spl mu/m and 180 V//spl mu/m for 2-/spl mu/m and 3-/spl mu/m finger spacing, respectively, and a maximum increase in the leakage current as large as one order of magnitude. The maximum performance and long-term reliability of an electric micromachine are adversely affected by the degradation of the breakdown voltage and the leakage current after moisture absorption. It is expected, however, that the electrical efficiency is improved using BCB-based polymers with negligible dependency on moisture absorption.     

Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (/spl lambda/=0.98 /spl mu/m)

We conduct a theoretical analysis of the design, fabrication, and performance measurement of high-power and high-brightness strained quantum-well lasers emitting at 0.98 /spl mu/m. The material system of interest consists of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. Some key parameters of the laser structure are theoretically analyzed, and their effects on the laser performance are discussed. The laser material is grown by metal-organic chemical vapor deposition and demonstrates high quality with low-threshold current density, high internal quantum efficiency, and extremely low internal loss. High-performance broad-area multimode and ridge-waveguide single-mode laser devices are fabricated. For 100-/spl mu/m-wide stripe lasers having a cavity length of 800 /spl mu/m, a high slope efficiency of 1.08 W-A, a low vertical beam divergence of 34/spl deg/, a high output power of over 4.45 W, and a very high characteristic temperature coefficient of 250 K were achieved. Lifetime tests performed at 1.2-1.3 W (12-13 mW//spl mu/m) demonstrates reliable performance. For 4-/spl mu/m-wide ridge waveguide single-mode laser devices, a maximum output power of 394 mW and fundamental mode power up to 200 mW with slope efficiency of 0.91 mW//spl mu/m are obtained.     

Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD

1.3- and 1.55-/spl mu/m vertical-cavity surface-emitting lasers (VCSELs) on InP have been realized. High-reflectivity AlGaInAs-InP lattice matched distributed Bragg reflectors (DBRs) were grown on InP substrates. 1.7 (for 1.3 /spl mu/m) and 2.0 (for 1.55 /spl mu/m) mW single mode power at 25/spl deg/C, 0.6 mW single mode power at 85/spl deg/C and lasing operation at >100/spl deg/C have been achieved. 10 Gbit/s error free transmissions through 10 km standard single mode fiber for 1.3-/spl mu/m VCSELs, and through 15 km nonzero dispersion shift fiber for 1.55-/spl mu/m VCSELs, have been demonstrated. With the addition of an SOA, 100 km error free transmission at 10 Gbit/s also has been demonstrated through a negative dispersion fiber. No degradation has been observed after over 2500-h aging test.     

Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET

The temperature-dependent characteristics of an InGaP/InGaAs/GaAs heterostructure field-effect transistor (HFET), using the (NH/sub 4/)/sub 2/S/sub x/ solution to form the InGaP surface passivation, are studied and demonstrated. The sulfur-passivated device shows significantly improved dc and RF performances over a wide temperature range (300-510 K). With a 1/spl times/100-/spl mu/m/sup 2/ gate-dimension HFET by (NH/sub 4/)/sub 2/S/sub x/ treatment, the considerably improved thermal stability over dc performances including lower temperature variation coefficients on the turn-on voltage (-1.23 mV/K), the gate-drain breakdown voltage (-0.05 mV/K), the gate leakage current (1.04 /spl mu/A/mm/spl middot/K), the threshold voltage (-1.139 mV/K), and the drain-saturation-current operating regimes (-3.11/spl times/10/sup -4//K) are obtained as the temperature is increased from 300 to 510 K. In addition, for RF characteristics, the sulfur-passivated device also shows a low degradation rate on drain-saturation-current operating regimes (-3.29/spl times/10/sup -4//K) as the temperature is increased from 300 to 400 K. These advantages provide the promise for high-speed high-frequency high-temperature electronics applications.     

High-power/high-brightness diode-pumped 1.9-/spl mu/m thulium and resonantly pumped 2.1-/spl mu/m holmium lasers

We report high power (>36 W) with beam propagation factor M/sup 2//spl sim/2 in a diode end-pumped Tm:LiYF/sub 4/ (Tm:YLF) laser generating output near the 1.91-/spl mu/m region. Using the 1.91-/spl mu/m emission and high brightness achieved with the Tm:YLF laser we resonantly end-pump the Holmium /sup 5/I/sub 7/ manifold in Ho:YAG and demonstrate /spl sim/19 W of continuous-wave (CW) output. The diode-to-Holmium optical to-optical conversion efficiency achieved is /spl sim/18%. Using a CW pumped and repetitively Q-switched configuration, the Tm:YLF pumped Ho:YAG laser achieves >16 W of output power with an M/sup 2//spl sim/1.48 at 15 kHz. A Q-switched frequency range of 9 to >50 kHz is also achieved.     

GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy

High-efficiency optical emission past 1.3 /spl mu/m of GaInNAs on GaAs, with an ultimate goal of a high-power 1.55-/spl mu/m vertical-cavity surface-emitting laser (VCSEL), has proven to be elusive. While GaInNAs could theoretically be grown lattice-matched to GaAs with a very small bandgap, wavelengths are actually limited by the N solubility limit and the high In strain limit. By adding Sb to the GaInNAs quaternary, we have observed a remarkable shift toward longer luminescent wavelengths while maintaining high intensity. The increase in strain of these new alloys necessitates the use of tensile strain compensating GaNAs barriers around quantum-well (QW) structures. With the incorporation of Sb and using In concentrations as high as 40%, high-intensity photoluminescence (PL) was observed as long as 1.6 /spl mu/m. PL at 1.5 /spl mu/m was measured with peak intensity over 50% of the best 1.3 /spl mu/m GaInNAs samples grown. Three QW GaIn-NAsSb in-plane lasers were fabricated with room-temperature pulsed operation out to 1.49 /spl mu/m.     

1.3-/spl mu/m-range GaInNAsSb-GaAs VCSELs

1.3-/spl mu/m-range GaInNAsSb vertical-cavity surface-emitting lasers (VCSELs) with the doped mirror were investigated. GaInNASb active layers that include a small amount of Sb can be easily grown in a two-dimensional manner as compared with GaInNAs due to the suppression of the formation of three-dimensional growth in MBE growth. The authors obtained the lowest J/sub th/ per well (150 A/cm/sup 2//well) for the edge-emission type lasers due to the high quality of GaInNAsSb quantum wells. Using this material for the active media, the authors accomplished the first continuous wave operation of 1.3-/spl mu/m-range GaInNAsSb VCSELs. For the reduction of the threshold voltage and the differential resistance, they used the doped mirror grown by metal-organic chemical vapor deposition (MOCVD). By three-step growth, they obtained 1.3-/spl mu/m GaInNAs-based VCSELs with the low threshold current density (3.6 kA/cm/sup 2/), the low threshold voltage (1.2 V), and the low differential resistance (60 /spl Omega/) simultaneously for the first time. The back-to-back transmission was carried out up to 5 Gb/s. Further, the uniform operation of 10-ch VCSEL array was demonstrated. The maximum output power of 1 mW was obtained at 20/spl deg/C by changing the reflectivity of the front distributed Bragg reflector mirror. GaInNAsSb VCSELs were demonstrated to be very promising material for realizing the 1.3-/spl mu/m signal light sources, and the usage of the doped mirror grown by MOCVD is the best way for 1.3-/spl mu/m VCSELs.     

Multilayer (Al,Ga)N structures for solar-blind detection

We report on solar-blind metal-semiconductor-metal (MSM) detectors fabricated on stacks of (Al,Ga)N layers with different Al mole fraction. These structures were grown by molecular beam epitaxy on sapphire substrates to allow backside illumination and a low-temperature GaN buffer layer. They consist of a 0.3-0.4-/spl mu/m active layer grown on a thick (Al,Ga)N window layer (/spl ap/1 /spl mu/m) that is transparent at the wavelength of interest. Different Al contents were used in the window layer. We observed that, in general, samples with a high Al content were cracked, which is explained in terms of mechanical strain. MSM photodetectors fabricated on these samples showed large leakage currents that were correlated with the crack density. In order to reduce the strain and eliminate the cracks, we inserted an AlN layer between the buffer and window layer. A crack-free sample was obtained and the solar-blind photodetector fabricated on this structure showed record performance.     

Single-mode 1.27-/spl mu/m InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers

The 1.27-/spl mu/m InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current varies from 1.8 to 1.1 mA and the slope efficiency falls less than /spl sim/35% from 0.17 to 0.11 mW/mA as the temperature is raised from room temperature to 75/spl deg/C. The VCSELs continuously operate up to 105/spl deg/C with a slope efficiency of 0.023 mW/mA. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is estimated to be 10.7 GHz with modulation current efficiency factor of /spl sim/5.25GHz/(mA)/sup 1/2/. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25/spl deg/C to 70/spl deg/C. We also accumulated life test data up to 1000 h at 70/spl deg/C/10 mA.     

High-speed InSb photodetectors on GaAs for mid-IR applications

We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06/spl times/10/sup -6/ cm/sup 2/ to 2.25/spl times/10/sup -4/ cm/sup 2/ measured at 77 K and room temperature. Detectors had high zero-bias differential resistances, and the differential resistance area product was 4.5 /spl Omega/ cm/sup 2/. At 77 K, spectral measurements yielded high responsivity between 3 and 5 /spl mu/m with the cutoff wavelength of 5.33 /spl mu/m. The maximum responsivity for 80-/spl mu/m diameter detectors was 1.00/spl times/10/sup 5/ V/W at 4.35 /spl mu/m while the detectivity was 3.41/spl times/10/sup 9/ cm Hz/sup 1/2//W. High-speed measurements were done at room temperature. An optical parametric oscillator was used to generate picosecond full-width at half-maximum pulses at 2.5 /spl mu/m with the pump at 780 nm. 30-/spl mu/m diameter photodetectors yielded 3-dB bandwidth of 8.5 GHz at 2.5 V bias.     

The impact of LOC structures on 670-nm (Al)GaInP high-power lasers

We investigate the potential of large optical cavity (LOC)-laser structures for AlGaInP high-power lasers. For that we study large series of broad area lasers with varying waveguide widths to obtain statistically relevant data. We study in detail I/sub th/, /spl alpha//sub i/, /spl eta//sub i/, and P/sub max/, and analyze above-threshold behavior including temperature stability and leakage current. We got as expected for LOC structures minimal /spl alpha//sub i//spl les/1 cm/sup -1/ resulting in /spl eta//sup d/=1.1 W/A for 64/spl times/2000 /spl mu/m/sup 2/ uncoated devices. We obtain total output powers /spl ges/3.2 W (qCW) and /spl ges/1.5 W (CW) at 20/spl deg/C.     

Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers

We show that even in quantum-dot (QD) lasers with very low threshold current densities (J/sub th/=40--50 A/cm/sup 2/ at 300 K), the temperature sensitivity of the threshold current arises from nonradiative recombination that comprises /spl sim/60% to 70% of J/sub th/ at 300 K, whereas the radiative part of J/sub th/ is almost temperature insensitive. The influence of the nonradiative recombination mechanism decreases with increasing hydrostatic pressure and increasing band gap, which leads to a decrease of the threshold current. We also studied, for the first time, the band gap dependence of the radiative part of J/sub th/, which in contrast increases strongly with increasing band gap. These results suggest that Auger recombination is an important intrinsic recombination mechanism for 1.3-/spl mu/m lasers, even in a very low threshold QD device, and that it is responsible for the temperature sensitivity of the threshold current.     

Single-mode distributed feedback and microlasers based on quantum-dot gain material

Quantum-dot gain material fabricated by self-organized epitaxial growth on GaAs substrates is used for the realization of 980-nm and 1.3-/spl mu/m single-mode distributed feedback (DFB) lasers and edge-emitting microlasers. Quantum-dot specific properties such as low-threshold current, broad gain spectrum, and low-temperature sensitivity could be demonstrated on ridge waveguide and DFB lasers in comparison to quantum-well-based devices. 980-nm DFB lasers exhibit stable single-mode behavior from 20/spl deg/C up to 214/spl deg/C with threshold currents < 15 mA (1-mm cavity length). Utilizing the low-bandgap absorption of quantum-dot material miniaturized monolithically integrable edge-emitting lasers could be realized by deeply etched Bragg mirrors with cavity lengths down to 12 /spl mu/m. A minimum threshold current of 1.2 mA and a continuous-wave (CW) output power of >1 mW was obtained for 30-/spl mu/m cavity length. Low-threshold currents of 4.4 mA could be obtained for 1.3-/spl mu/m emitting 400-/spl mu/m-long high-reflection coated ridge waveguide lasers. DFB lasers made from this material by laterally complex coupled feedback gratings show stable CW single-mode emission up to 80/spl deg/C with sidemode suppression ratios exceeding 40 dB.     

Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers

The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilute-nitride GaAs-based near 1.3-/spl mu/m lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experiment shows that the linewidth enhancement factor is independent on the nitride content, and is in the range 1.7-2.5 for /spl lambda/=1.22--1.34 /spl mu/m dilute-nitride GaAs-based lasers. Differential gain and index with respect to either current or carrier concentration are reduced in dilute-nitride devices.     

Evaluation of spherical particle sizes with an asymmetric illumination microscope

A polarized microscope system is used to perform goniometric measurements of light scattered by small particles. The light incident angle on a sample of monodispersed latex microspheres is increased sequentially and a microscope objective lens collects scattered light from the samples. Light is only collected at angles greater than the objective lens numerical aperture (NA) so that only light scattered by the spheres is collected. The experimental results were modeled with a Mie theory-based algorithm. Experiments conducted with microspheres of diameter 1.03, 2.03, and 6.4 /spl mu/m show that, by decreasing the objective lens NA from NA=0.55 to NA=0.0548, a more distinguishable scattering pattern is detectable. From these highly shaped curves, we found that the size of a sphere of nominal diameter 2.03 /spl mu/m was 2.11 /spl plusmn/0.06 /spl mu/m and a 6.4 /spl mu/m sphere was 6.34 /spl plusmn/0.07 /spl mu/m.     

On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers

We analyze the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs. Building on the method of Tansu and coworkers, we find evidence that the characteristic temperatures for the threshold current T/sub 0/ and external efficiency T/sub 1/ are balanced by a combination of monomolecular recombination and temperature destabilizing mechanism(s) near room temperature. At elevated temperatures, the destabilizing process(es) dominate, due to increased threshold current density J/sub th/. While it is difficult to definitively identify carrier leakage, Auger recombination, or a combination of the two as the responsible mechanism(s), results indicate that carrier leakage certainly plays a role. Evidence of intervalence band absorption was also found; T/sub 1/ was reduced, but J/sub th/ and T/sub 0/ were not significantly degraded. Conclusions are corroborated by supporting measurements of the Z-parameter with bias, spontaneous emission spectrum, and band-offsets. Spontaneous emission measurements show evidence of weak Fermi-level pinning within the active region at threshold, indicating a form of carrier leakage. This is consistent with the characteristic temperature analysis and a leakage mechanism is proposed. This process is partially responsible for the greater temperature sensitivity of device parameters and the poor internal efficiency. Methods for reducing the effects of each parasitic mechanism are also described.     

GaAs-based modulation-doped quantum-well infrared photodetectors for single- and two-color detection in 3-5 /spl mu/m

Double-barrier quantum-well infrared photodetectors are promising for operation in the midinfrared region. In this paper, we present a series of novel molecular beam epitaxy (MBE)-grown devices based on modulation-doped (MD) AlGaAs-AlAs-GaAs structures that exhibit a remarkable responsivity at zero bias (0.05 A/W) at 4.6 /spl mu/m. Since the photovoltaic properties are strongly dependent on the symmetry of the potential profile, we have systematically varied the position of the dopant in the barriers for a series of single-color detectors. Low-temperature photocurrent spectra and current-voltage (I-V) characteristics (in the dark and under illumination) show that the location of the dopant is a relevant design parameter, due to its role in the photovoltaic behavior (i.e., the presence or absence of zero bias signal). The performance of the MD devices is compared with that of a detector with doping in the center of the well and otherwise the same structure. In particular, the responsivity and detectivity seem to be higher for the MD detectors than for well-doped samples, especially when the dopant is located in the barrier closest to the substrate. Therefore, we have chosen that MD dopant profile when designing and growing, to our knowledge, the first 3-5 /spl mu/m two-color detector, with simultaneous detection at 3.8 and 4.4 /spl mu/m.     

Electron mobility in dense argon gas at several temperatures

The mobility /spl mu/ of excess electrons in dense Argon gas was measured as a function of the applied electric field E and of the gas density N at several temperatures in the range 142.6 < T < 200 K, encompassing the critical temperature T/sub c/ = 150.86 K We report here measurements up to N /spl ap/ 7 nm/sup -3/, close to the critical density, N/sub c/ /spl ap/ 8.1 nm/sup -3/. At all temperatures, and up to moderately high densities, the density-normalized mobility /spl mu/N shows the usual electric field dependence in a gas with a Ramsauer-Townsend minimum due to the mainly attractive electron-atom interaction. /spl mu/N is constant and field independent for small E, shows a maximum for a reduced field E/N /spl ap/ 4 mTd, and then decreases rapidly with the field. The zero field density-normalized mobility /spl mu//sub 0/N, for all T > T/sub c/, shows the well known anomalous positive density effect, i.e., /spl mu//sub 0/N increases with increasing N. Below T,, however, /spl mu//sub 0/N does not show the expected effect, but features a broad maximum. This appears to be a crossover behavior between the positive density effect shown for T > T, and the small negative effect previously observed for T /spl ap/ 90 K However, the data at all temperatures confirm the interpretation of the anomalous density effect as being essentially due by the density-dependent quantum shift of the electron ground state kinetic energy in a disordered medium as a result of multiple scattering (MS) processes, although other MS processes influence the experimental outcome.     

The effect of electric field strength on the induction charge of freely levitating particles

Many industrial processes such as electrostatic separation, fluidization, and coating rely upon induction charging of fine particles. This paper considers the effects of electric field strength on the magnitude of the induction charge on freely levitating particles. The charging time and charge on a freely levitating particle depend on a number of properties, mainly the electric field strength, particle size, density, and resistivity. A charging model showing the dependence upon the electric field strength is presented and analyzed, along with a model of the levitation process. A high-speed digital imaging system was used to measure individual particle motion during levitation. Using these data along with the developed models, it was possible to determine the charge on the particle. Semiconductive particles with a mass mean diameter (MMD) of 156 /spl mu/m were used in these experiments and tested at electric fields of 6.8, 8.5, 15, and 21 kV/cm, respectively. In addition, some experiments using particles 97-/spl mu/m and 412-/spl mu/m MMD at an electric field of 15 kV/cm were carried out to confirm the results obtained for the 156-/spl mu/m particles. It was found that the particle charge was dependent upon both the charging time and electric field strength. In particular, for high electric fields the particle did not achieve its saturation charge before liftoff occurred. This shows that higher electric field strength is not necessarily the optimum condition for levitation of semiconductive particles.     

Surface-plasmon quantum cascade microlasers with highly deformed resonators

We report the demonstration of surface-plasmon microcylinder quantum cascade lasers with circular and deformed resonators. An improved self-alignment fabrication technique was developed that allows the use of wet etching, necessary to achieve smooth and clean surfaces, in combination with the deposition of the surface-plasmon-carrying metal layer up to the very edge of the resonator, where the optical mode is mostly located. The diameter of the microcylinders ranges from 75 to 180 /spl mu/m while their deformation coefficient /spl epsiv/ ranges from /spl epsiv/=0 to /spl epsiv/=0.32. Circular microcylinder lasers show a reduction of /spl sim/50% of the threshold current density with respect to devices with standard ridge-waveguide resonators. On the other hand, highly deformed microcylinder lasers exhibit a complex mode structure, suggesting the onset of chaotic behavior.