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1.
Self-aligned high-frequency InP/InGaAs double heterojunction bipolar transistors (DHBTs) have been fabricated on a Si substrate. A current gain of 40 was obtained for a DHBT with an emitter dimension of 1.6 μm×19 μm. The S parameters were measured for various bias points. In the case of I C=15 mA, f T was 59 GHz at V CE=1.8 V, and f max was 69 GHz at V CE=2.3 V. Due to the InP collector, breakdown voltage was so high that a V CE of 3.8 V was applied for I C=7.5 mA in the S -parameter measurements to give an f T of 39 GHz and an f max of 52 GHz 相似文献
2.
Lee W.-S. Enoki T. Yamahata S. Matsuoka Y. Ishibashi T. 《Electron Devices, IEEE Transactions on》1992,39(12):2694-2700
A self-aligned process is developed to obtain submicrometer high-performance AlGaAs/GaAs heterojunction bipolar transistors (HBTs) which can maintain a high current gain for emitter sizes on the order of 1 μm2. The major features of the process are incorporation of an AlGaAs surface passivation structure around the entire emitter-base junction periphery to reduce surface recombination and reliable removal of base metal (Ti/W) deposits from the sidewall by electron cyclotron resonance (ECR) plasma deposition of oxide and ECR plasma etching by NF3. A DC current gain of more than 30 can be obtained for HBTs with an emitter-base junction area of 0.5×2 μm2 at submilliampere collector currents. The maximum f T and f max obtained from a 0.5×2 μm2 emitter HBT are 46 and 42 GHz, respectively at I C=1.5 and more than 20 GHz even at I C=0.1 mA 相似文献
3.
Rabinzohn P.D. Usagawa T. Mizuta H. Yamaguchi K. 《Electron Devices, IEEE Transactions on》1991,38(2):222-231
The bipolar/FET characteristics of the 2DEG-HBT are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f T is determined mainly by the collector transit time of holes and by the charging time of the extrinsic base-collector capacitance C bcEXT. The charging times of the emitter and base regions and the base transit time are shown to be negligible. A high cutoff frequency F T (88 GHz) and current gain h FE (760) are obtained for an emitter size of 1×10 μm2, and undoped collector thickness of 150 nm, and a collector current density J c of 105 A/cm2. The FET operation of the same 2DEG-HBT structure shows a threshold voltage V th of 0.74 V, the transconductance G mmax of 80 mS/mm, and maximum cutoff frequency F Tmax of 15 GHz. The dependence of the device performance on material parameters is analyzed extensively from a device design point of view 相似文献
4.
An In0.41Al0.59As/n+-In0.65 Ga0.35As HFET on InP was designed and fabricated, using the following methodology to enhance device breakdown: a quantum-well channel to introduce electron quantization and increase the effective channel bandgap, a strained In0.41Al0.59As insulator, and the elimination of parasitic mesa-sidewall gate leakage. The In0.65Ga0.35As channel is optimally doped to N D=6×1018 cm-3. The resulting device (L g=1.9 μm, W g =200 μm) has f t=14.9 GHz, f max in the range of 85 to 101 GHz, MSG=17.6 dB at 12 GHz V B=12.8 V, and I D(max)=302 mA/mm. This structure offers the promise of high-voltage applications at high frequencies on InP 相似文献
5.
Peransin J.-M. Vignaud P. Rigaud D. Vandamme L.K.J. 《Electron Devices, IEEE Transactions on》1990,37(10):2250-2253
The 1/f noise in normally-on MODFETs biased at low drain voltages is investigated. The experimentally observed relative noise in the drain current S I/I 2 versus the effective gate voltage V G=V GS-V off shows three regions which are explained. The observed dependencies are S I/I 2∝V G m with the exponents m =-1, -3, 0 with increasing values of V G. The model explains m =-1 as the region where the resistance and the 1/f noise stem from the 2-D electron gas under the gate electrode; the region with m =0 at large V G or V GS≅0 is due to the dominant contribution of the series resistance. In the region at intermediate V G , m =-3, the 1/f noise stems from the channel under the gate electrode, and the drain-source resistance is already dominated by the series resistance 相似文献
6.
A theoretical investigation of Si/Si1-xGex heterojunction bipolar transistors (HBTs) undertaken in an attempt to determine their speed potential is discussed. The analysis is based on a compact transistor model, and devices with self-aligned geometry, including both extrinsic and intrinsic parameters, are considered. For an emitter area of 1×5 μm2, an f t of over 75 GHz and f max of over 35 GHz were computed at a collector current density of 1×10 5 A/cm2 and V CB of 5 V 相似文献
7.
Sato H. Vlcek J.C. Fonstad C.G. Meskoob B. Prasad S. 《Electron Device Letters, IEEE》1990,11(10):457-459
Collector-up InGaAs/InAlAs/InP heterojunction bipolar transistors (HBTs) were successfully fabricated, and their DC and microwave characteristics measured. High collector current density operation (J c>30 kA/cm2) and high base-emitter junction saturation current density (J 0>10-7 A/cm2) were achieved. A cutoff frequency of f t=24 GHz and a maximum frequency of oscillation f max=20 GHz at a collector current density of J 0 =23 kA/cm2 were achieved on a nominal 5-μm×10-μm device 相似文献
8.
Kusano C. Masuda H. Mochizuki K. Ishikawa Y. Kawata M. Mitani K. Miyazaki M. 《Electron Devices, IEEE Transactions on》1993,40(1):25-31
A new basic ohmic contact technology for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is presented. The effect of the device parameters on the high-frequency performance of HBT ICs for 10-Gb/s systems is analyzed, and it is shown that, at a cutoff frequency (f T) of 40 GHz or more, reducing base resistance or collector capacitance is more effective than increasing f T for obtaining high-frequency performance. A process is developed for fabricating base electrodes with a very low ohmic contact resistivity, ~10-7 Ω-cm2, by using a AuZn/Mo/Au alloy, which provides the required high performance. Self-aligned AlGaAs/GaAs HBTs, with a 2.5-μm×5-μm emitter, using a AuZn/Mo/Au alloy base metal and an undoped GaAs collector, are shown to have an f T and a maximum oscillation frequency of about 45 and 70 GHz, respectively, at 3.5 mA. An AGC amplifier with a 20-dB gain and a bandwidth of 13.7 GHz demonstrates stable performance 相似文献
9.
The usual approximate expression for measured f T =[g m/2π (C gs+C gd)] is inadequate. At low drain voltages just beyond the knee of the DC I -V curves, where intrinsic f t is a maximum for millimeter-wave MODFETs, the high values of C gd and G ds combine with the high g m to make terms involving the source and drain resistance significant. It is shown that these resistances can degrade the measured f T of a 0.30-μm GaAs-AlGaAs MODFET from an intrinsic maximum f T value of 73 GHz to a measured maximum value of 59 GHz. The correct extraction of maximum f T is essential for determining electron velocity and optimizing low-noise performance 相似文献
10.
Seabaugh A.C. Beam E.A. III Taddiken A.H. Randall J.N. Kao Y.-C. 《Electron Device Letters, IEEE》1993,14(10):472-474
The authors report the first co-integration of resonant tunneling and heterojunction bipolar transistors. Both transistors are produced from a single epitaxial growth by metalorganic molecular beam epitaxy, on InP substrates. The fabrication process yields 9-μm2-emitter resonant tunneling bipolar transistors (RTBTs) operating at room temperature with peak-to-valley current ratios (PVRs) in the common-emitter transistor configuration, exceeding 70, at a resonant peak current density of 10 kA/cm2, and a differential current gain at resonance of 19. The breakdown voltage of the In0.53Ga0.47As-InP base/collector junction, V CBO, is 4.2 V, which is sufficient for logic function demonstrations. Co-integrated 9-μm2-emitter double heterojunction bipolar transistors (DHBTs) with low collector/emitter offset voltage, 200 mV, and DC current gain as high as 32 are also obtained. On-wafer S -parameter measurements of the current gain cutoff frequency (f T) and the maximum frequency of oscillation (f max) yielded f T and f max values of 11 and 21 GHz for the RTBT and 59 and 43 GHz for the HBT, respectively 相似文献
11.
CW measurement of HBT thermal resistance 总被引:2,自引:0,他引:2
Measurements of the temperature dependence of β and V BE were made on AlGaAs-GaAs HBTs and used to determine device thermal resistance. The measurements were CW and not switched or pulsed in order to have a simpler procedure. With base doping greater than 1019 cm-3, HBTs have negligible base-width modulation (i.e., flat I C versus V CE characteristics) which makes CW thermal resistance measurement especially direct and simple 相似文献
12.
Hayden J.D. Mele T.C. Perera A.H. Burnett D. Walczyk F.W. Lage C.S. Baker F.K. Woo M. Paulson W. Lien M. See Y.-C. Denning D. Cosentino S.J. 《Electron Devices, IEEE Transactions on》1992,39(7):1669-1679
A high-performance 0.5-μm BiCMOS technology has been developed. Three layers of polysilicon are used to achieve a compact four-transistor SRAM bit cell size of less than 20 μm2 by creating self-aligned bit-sense and V ss contacts. A WSix polycide emitter n-p-n transistor with an emitter area of 0.8×2.4 μm2 provides a peak cutoff frequency (f T) of 14 GHz with a collector-emitter breakdown voltage (BV CFO) of 6.5 V. A selectively ion-implanted collector (SIC) is used to compensate the base channeling tail in order to increase f T and knee current without significantly affecting collector-substrate capacitance. ECL gate delays as fast as 105 ps can be obtained with this process 相似文献
13.
Kabza H. Ehinger K. Meister T.F. Meul H.-W. Weger P. Kerner I. Miura-Mattausch M. Schreiter R. Hartwig D. Reisch M. Ohnemus M. Kopl R. Weng J. Klose H. Schaber H. Treitinger L. 《Electron Device Letters, IEEE》1989,10(8):344-346
A double-poly-Si self-aligning bipolar process employing 1-μm lithography is developed for very-high-speed circuit applications. Epilayer doping and thickness are optimized for breakdown voltages and good speed-power performance. Shallow base-emitter profiles are obtained by combining low-energy boron implantation and rapid thermal annealing (RTA) for the emitter drive-in. A transit frequency f T =14 GHz at V BC=-1 V and a current-mode-logic (CML) gate delay of 43 ps at 30 fJ are achieved. For an emitter size of 1.0×2.0 μm2 a minimum power-delay product of 15 fJ is calculated. Circuit performance capability is demonstrated by a static frequency divider operating up to 15 GHz 相似文献
14.
Greenberg D.R. del Alamo J.A. Harbison J.P. Florez L.T. 《Electron Device Letters, IEEE》1991,12(8):436-438
Molecular beam epitaxy (MBE)-grown L g=1.7-μm pseudomorphic Al0.38Ga0.62As/n+-In0.15Ga 0.85As metal-insulator-doped channel FETs (MIDFETs) are presented that display extremely broad plateaus in both f T and f max versus V GS, with f T sustaining 90% of its peak over a gate swing of 2.6 V. Drain current is highly linear with V GS over this swing, reaching 514 mA/mm. No frequency dispersion in g m up to 3 GHz was found, indicating the absence of electrically active traps in the undoped AlGaAs pseudoinsulator layer. These properties combine to make the pseudomorphic MIDFET highly suited to linear, large-signal, broadband applications 相似文献
15.
Chen Y.-K. Temkin H. Tanbun-Ek T. Logan R.A. Nottenburg R.N. 《Electron Device Letters, IEEE》1989,10(4):162-164
Buried p-buffer double heterostructure modulation-doped field-effect transistors (BP DH-MODFETs) with an InGaAs quantum-well channel were fabricated with high transconductance and good breakdown voltage, by placing the metal gate directly on Fe-doped InP insulating layer. Excellent extrinsic DC transconductance of 560 mS/mm and a high gate-to-drain diode breakdown voltage (greater than 20 V) were achieved at room temperature with FETs of 1.2-μm gate length. Unity currently gain cutoff frequency f T of 24 GHz and maximum oscillation frequency f max of 60 GHz were demonstrated for a drain to source voltage V DS=4 V, which corresponds to an average electron velocity of 2.2×107 cm/s in the quantum well 相似文献
16.
The fabrication and characterization of a 0.25-μm-gate, ion-implanted GaAs MESFET with a maximum current-gain cutoff frequency f t of 126 GHz is reported. Extrapolation of current gains from bias-dependent S -parameters at 70-100% of I dss yields f 1's of 108-126 GHz. It is projected that an f 1 of 320 GHz is achievable with 0.1-μm-gate GaAs MESFETs. This demonstration of f 1's over 100 GHz with practical 0.25-μm gate length substantially advances the high-frequency operation limits of short-gate GaAs MESFETs 相似文献
17.
Busta H.H. Pogemiller J.E. Zimmerman B.J. 《Electron Devices, IEEE Transactions on》1993,40(8):1537-1542
The field at the tip of a field emitter triode can be expressed by E =βV g+γV c, where V g and V c the gate and collector voltages, respectively. For small gate diameters and tips below or in the plane of the gate and/or large tip-to-collector distances, γV c<<βV g. The-device is operated in the gate-induced field emission mode and the corresponding I -V c curves are pentode-like. By increasing the gate diameter and/or recessing the gates from the tips, collector-assisted operation can be achieved at reasonable collector voltages. Results are presented for two devices with gate diameters of 3.6 and 2.0 μm. By obtaining γ at different emitter-to-collector distances, I -V c and transconductance g m-V g curves are calculated and compared with experimental results. It is shown that as a consequence of collector-assisted operation, the transconductance of a device can be increased significantly 相似文献
18.
Scherrer D. Kruse J. Laskar J. Feng M. Wada M. Takano C. Kasahara J. 《Electron Device Letters, IEEE》1993,14(9):428-430
The low-power microwave performance of an enhancement-mode ion-implanted GaAs JFET is reported. A 0.5-μm×100-μm E-JFET with a threshold voltage of V th=0.3 V achieved a maximum DC transconductance of g m=489 mS/mm at V ds=1.5 V and I ds=18 mA. Operating at 0.5 mW of power with V ds=0.5 V and I ds =1 mA, the best device on a 3-in wafer achieved a noise figure of 0.8 dB with an associated gain of 9.6 dB measured at 4 GHz. Across a 3-in wafer the average noise figure was F min=1.2 dB and the average associated gain was G a=9.8 dB for 15 devices measured. These results demonstrate that the E-JFET is an excellent choice for low-power personal communication applications 相似文献
19.
AlGaAs/GaAs collector-up heterojunction bipolar transistors (HBTs) with a heavily carbon-doped base layer were fabricated using oxygen-ion implantation and zinc diffusion. The high resistivity of the oxygen-ion-implanted AlGaAs layer in the external emitter region effectively suppressed electron injection from the emitter, allowing collector current densities to reach values above 105 A/cm 2. For a transistor with a 2-μm×10-μm collector, f T was 70 GHz and f max was as high as 128 GHz. It was demonstrated by on-wafer measurements that the first power performance of collector-up HBTs resulted in a maximum power-added efficiency of as high as 63.4% at 3 GHz 相似文献
20.
Very-high-performance common-emitter InP/InGaAs single heterojunction bipolar transistors (HBTs) grown by metalorganic molecular beam epitaxy (MOMBE) are reported. They exhibit a maximum oscillation frequency (f T) of 180 GHz at a current density of 1×105 A/cm2. this corresponds to an (R BC BC)eff=f T/(8πf 2max) delay time of 0.12 ps, which is the smallest value every reported for common-emitter InP/InGaAs HBTs. The devices have 11 μm2 total emitter area and exhibit current gain values up to 100 at zero base-collector bias voltage. The breakdown voltage of these devices is high with measured BV CEO and BV CEO of 8 and 17 V, respectively 相似文献