共查询到19条相似文献,搜索用时 46 毫秒
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采用多弧离子镀膜技术在硬质合金基体表面沉积TiN涂层,研究了气体总流量对TiN涂层表面形貌和力学性能的影响。通过SEM观察涂层表面形貌,利用ImageJ图像处理软件对涂层的像素分布进行统计和分析,并通过自动划痕仪和纳米压痕仪对涂层的力学性能进行表征。结果表明,随着气体总流量的增加,涂层表面大颗粒的数量和尺寸均在增加,涂层附着力先增大后减小,而显微硬度先减小后增大;当气体总流量为300mL/min时,涂层气坑数量最多,附着力最大,为106.4N;当气体总流量为100mL/min时,涂层显微硬度最大,为HV3 021。 相似文献
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采用阴极弧离子镀法在GH4169合金表面制备了TiAlSiN涂层,通过扫描电镜和能谱仪分析了其表面和界面的形貌和能谱,用轮廓仪测试了涂层表面粗糙度.在往复式摩擦磨损试验机上进行了涂层摩擦与磨损实验,通过能谱仪分析了涂层表面磨损后点能谱和面能谱,考察了TiAlSiN涂层的摩擦因数和磨损性能,对其磨损机理进行了讨论.实验结果显示涂层表面组织结构较为致密,表面粗糙度为194.57 nm;涂层主要成分为Ti、Al、Si和N元素,Si原子细化了TiN和AlN晶粒;涂层结合界面发生了化学反应和成分的相互扩散,其结合形式为化学结合;涂层摩擦因数平均值为0.493,磨损形式为磨粒磨损;磨损痕迹面扫描结果表明,磨损后Al和Ti形成的氮化物减少,Si和N原子无明显的减少现象,涂层耐磨性增强主要依赖于Si和N形成的化合物. 相似文献
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用内外靶配置的多弧-磁控溅射技术在单晶硅和硬质合金上制备Ti-Si-N纳米复合涂层,研究衬底偏压和Si靶溅射电流对涂层结构和力学性能的影响,经过实验参数优化,在偏压为-150 V、Si靶电流为15 A的沉积条件下,得到Si的原子分数为6.3%的Ti-Si-N纳米复合涂层。X射线衍射、X射线光电子能谱和透射电镜分析表明,涂层中含有晶态TiN和非晶Si3N4,纳米尺寸的TiN颗粒镶嵌在非晶Si3N4基体结构中。纳米硬度计测试表明涂层的显微硬度为40 GPa,摩擦学实验表明其摩擦因数为0.89,可满足Ti-Si-N纳米复合涂层的工业化应用要求。 相似文献
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采用多弧离子镀技术在TC11钛合金基体上沉积了TiAlN涂层。金相截面组织观察和扫描电镜表面形貌照片显示,制备出的膜层连续、光滑、孑L隙率低、组织致密;X射线衍射分析表明,膜层的相结构中大致含有以下组成相:(Ti,A1)N、Ti2A1N、Ti。用EDS能谱分析对膜层中的元素含量进行了测定,发现Al元素出现了成分负偏析。性能测试表明,TiAlN膜具有较高的硬度和膜/基结合力。 相似文献
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20钢离子镀TiN的组织和性能 总被引:1,自引:1,他引:0
以20钢作为研究对象,运用多弧离子镀的方法,表面制备了氮化钛涂层.通过用磨损试验和组织观察,探讨性能和组织之间的关系.结果表明,高硬度的基体对表面氮化钛形成良好支撑,有助于改善涂层的耐磨性.20钢表面沉积TiN涂层,可以提高表面的硬度,在较低载荷下能够明显降低摩擦系数、磨损量,改善耐磨性. 相似文献
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悬浮液等离子喷涂(SPS)采用液相送料的方式,解决了纳米级粉末在热喷涂过程中送料困难的问题,同时,可沉积具有纳米级或亚微米级的柱状晶或垂直裂纹等结构的涂层。本文综述了近些年SPS制备热障涂层的相关研究进展。对SPS的原理和工艺特点进行了介绍;阐述了SPS制备热障涂层典型微结构,包括垂直裂纹和柱状晶结构的沉积机理;探讨了悬浮液特性(包括固含量、粘度、表面张力)、喷涂工艺参数(包括喷枪类型、喷涂距离)、基材表面粗糙度等对SPS沉积涂层微结构、热物理性能、热循环性能等的影响。最后,对SPS未来的发展及研究趋势进行了展望。 相似文献
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为了研制一种连铸结晶器耐高温耐磨材料,采用超音速等离子喷涂法在纯铜板上制备了氧化钇部分稳定的氧化锆(YPSZ)涂层.利用X射线衍射仪、扫描电镜、彩色3D激光显微镜和图形软件(Image-pro Plus3.0)对YPSZ涂层的微观组织进行表征,通过销盘式磨损仪在室温干摩擦条件下测试了涂层的耐磨性能及化学硬化对涂层耐磨性能的影响.研究发现YPSZ涂层完全由t’-ZrO2相组成,其断口形貌由柱状晶和一定量的部分熔融颗粒组成,截面组织形态表现出较好的完整性,涂层孔隙率为1.2%,表面粗糙度为6.457μm.磨损实验表明化学硬化前YPSZ涂层与刚玉球对磨时的摩擦因数在0.5~0.6之间,平均磨痕宽度为3638.8μm,磨损体积为1.25508×10-2mm3,磨损机制为脆性断裂导致的磨粒磨损;化学硬化后YPSZ涂层的磨痕宽度和磨损体积均有大幅降低,脆断程度也更轻,其磨损性能得到极大改善. 相似文献
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Hard amorphous silicon carbonitride coatings for wear resistance have been produced by d.c. plasma‐enhanced chemical vapour deposition on pure iron at 573 K. Compared with most plasma assisted processes work was conducted under a relatively high pressure of 130 Pa. The advantages of this technique are an amorphous film structure, high deposition rates (up to 2 μm/min), high hardness and simple equipment. Hexamethyldisilazan (HMDSN) was used as precursor and argon, hydrogen, nitrogen and ammonia as process gases. The dependence of the coatings on the process parameters (process gas and d.c. power) was investigated. The characterization of the samples was carried out mainly by Fourier transform infrared spectrometry (FTIR), electron probe microanalysis (EPMA) and hardness measurement. Samples show clearly the infrared spectra absorption bands characteristic of SiC and Si3N4, with traces of hydrogen bonding. The material structure shows a strong dependence on the process gas and the d.c. power. However, for argon and hydrogen were deposited carbon‐rich SiC films with low nitrogen content. Nitridic films with low carbon content were deposited using nitrogen and especially ammonia. The hardness of the produced coatings was about 10 ‐ 55 GPa. 相似文献
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Ceramics (alumina) coating on sevaral materials has been successfully achieved at room temperature by gas - assisted deposition ( GAD) technique. In the GAD process the alumina powder was accelerated by jet flow with velocity of - 1000 m/s and impaeted to a substrate, thereby a fiat and dense film was deposited up to 10 μm on the substrate without arty additional heating. The crystal structttre of the alumina in an obtained GAD films seemed as amorphous like. The crystalline phase was recovered by post nnnenling at 1 300 ℃ , however, the matrix resulted in a hollow structure. 相似文献
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Andrew A. Cochran James B. Stephenson 《Metallurgical and Materials Transactions B》1970,1(10):2875-2880
The Bureau of Mines investigated the formation of boron and boron-carbide coatings by vaporphase reactions. Optimum parameters were determined for hydrogen reduction of boron trichloride and for the formation of boron-carbide coatings on graphite by reaction with the deposited boron. At 1300°C, about 85 pct of the boron was deposited. Tungsten substrates did not react with the boron deposit; other substrates reacted to various extents. The hydrogen reduction of boron tribromide was briefly investigated. Boron carbide was deposited at 1300°C by adding methane to the boron trichloride-hydrogen feed gas. The chemical composition of the vapor-deposited boron carbide approximated B4C. A method of etching B4C was developed to study its microstructure. When boron was deposited on graphite at 1500°C, very hard, uniform, strongly adherent coatings of B4C were formed that might be useful in applications such as rocket nozzles and chemical reaction and processing vessels. 相似文献
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The vacuum thermal evaporation technique was used to simultaneously deposit zinc coatings onto interstitial free steel plates and single-crystal silicon wafers ... 相似文献
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Gas-flame deposition of corrosion-resistant coatings 相似文献