钽阳极氧化膜的半导体性研究

用电容测量技术和电化学阻抗技术研究了高纯钽丝在稀磷酸(质量分数为0.01%,0.10%和1.00%)、氨水(pH=11)和饱和CO2水溶液(pH=4)中阳极氧化形成的氧化钽膜在酸性缓冲液(pH=2)中的半导体性和阻抗特性.实验结果表明,来自非磷酸系的阳极氧化钽膜呈现出双极性(p-n)半导体结构特征,而来自磷酸系的则表现...     

Influence of oxygen flow rate on microstructural,electrical and optical properties of indium tin tantalum oxide films

Indium tin oxide (ITO) and indium tin tantalum oxide (ITTO) films were deposited on glass substrates by magnetron sputtering technology with one or two targets. Properties of ITO and ITTO films deposited at different oxygen flow rates were contrastively studied. Ta-doping strengthens along the orientation of (400) plane and leads to better crystalline structure as well as to a decrease in surface roughness. The increase in oxygen flow rate increases sheet resistance and reduces carrier concentration, and ITTO films show higher carrier concentration. Certain oxygen flow rates can improve the visible light transmittance of films, but excessive oxygen can worsen the optical properties. The carrier concentration has an important influence on near-IR reflection, near-UV absorption and optical band gap. The optical band gap decreases with the increasing of oxygen flow rate, and ITTO films show wider optical band gap than ITO films. ITTO films prepared by co-sputtering reveal better optical–electrical properties and chemical and thermal stability than ITO films.     

Effects of annealing conditions on the properties of tantalum oxide films on silicon substrates

The formation of a SiO₂ layer at the Ta₂O₅/Si interface is observed by annealing in dry O₂ or N₂ and the thickness of this layer increases with an increase in annealing temperature. Leakage current of thin (less than 40 nm thick) Ta₂O₅ films decreases as the annealing temperature increases when annealed in dry O₂ or N₂. The dielectric constant vs annealing temperature curve shows a maximum peak at 750 or 800° C resulting from the crystallization of Ta₂O₅. The effect is larger in thicker Ta₂O₅ films. But the dielectric constant decreases when annealed at higher temperature due to the formation and growth of a SiO₂ layer at the interface. The flat band voltage and gate voltage instability as a function of annealing temperature can be explained in terms of the growth of interfacial SiO₂. The electrical properties of Ta₂O₅ as a function of annealing conditions do not depend on the fabrication method of Ta₂O₅ but strongly depend on the thickness of Ta₂O₅ layer.     

Effect of tantalum doping on the structural and optical properties of RF magnetron sputtered indium oxide thin films

Tantalum doped indium oxide films are prepared by RF magnetron sputtering technique and the films are annealed in air at 300 °C. The effect of Ta doping on the structural, morphological, and optical properties of the annealed films are studied using techniques like X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), EDX analysis, micro-Raman, UV–visible and photoluminescence spectroscopy and electrical measurements. The XRD patterns present a cubic bixbyite structure for all the films with preferred orientation along the (222) plane. The lattice constant estimation presents a reduction in lattice size with Ta doping. The W–H plot shows a tensile strain for all the films and also indicates the presence of strain induced broadening of the XRD peaks. The Raman spectra present all the characteristic modes of In₂O₃ cubic bixbyite phase. FESEM and AFM images show the uniform and dense distribution of smaller grains in the films. All the films show high transmittance (above 85%) in the 400–900 nm region. Electrical measurement shows a systematic increase of carrier concentration and electrical conductivity with increase in Ta doping concentration. Band gap energy increases with increase in Ta doping concentration. All the films show intense PL emission in the UV region.     

Phototransients in anodic tantalum oxide thin films

Phototransients under radiation of 274 nm have been studied in anodic tantalum oxide thin films. The area under the phototransient curves, the relaxation time end the decay time are found U> decrease with the applied field. For short times ΔI αexp ( ? t/r) with τ decreasing with field, while for longer times thore is a departure from exponential behaviour. These photo transients may be due to the drift of photoexcited electrons under the action of an applied field end their subsequent retrapping.     

Effect of a silicon nitride buffer layer on the electrical properties of tantalum pentoxide films

Ta₂O₅ films with a buffer layer of silicon nitride of various thicknesses were deposited on Si substrate by reactive sputtering and submitted to annealing at 700 °C in nitrogen atmosphere. The microstructure and the electrical properties of thin films were studied. It was found that with a buffer layer of silicon nitride the electrical properties of Si_xN_y/Ta₂O₅ film can be improved than Ta₂O₅ film. When the thickness of the buffer layer was 3 nm, the Si_xN_y/Ta₂O₅ film has the highest dielectric constant of 27.4 and the lowest leakage current density of 4.61 × 10⁻⁵ A/cm² (at −1 V). For the Si_xN_y (3 nm)/Ta₂O₅ film, the conduction mechanism of leakage current was also analyzed and showed four types of conduction mechanisms at different applied voltages.     

Effect of oxygen on the properties of encapsulated polycrystalline CdSe films

This paper presents a comprehensive study of the effects of annealing silicon dioxide encapsulated CdSe films in oxygen on the microstructure, resistivity, photosensitivity and energy levels. The energy levels were investigated by using the independent methods of thermally stimulated current, photocurrent spectral response, and Hall measurements. The film structure is wurtzite with grains of average size 0.35 μm, which extend through the thickness of the films. Annealing the films in oxygen at 450°C increases the resistivity from 10 ohm cm to 10⁶ ohm cm. The electron mobility, which has an activation energy of 0.08 eV, remains constant at about 100 cm² V⁻¹ s⁻¹ during the anneal steps. The change in the resistivity is due to a combination of thermal rearrangement and oxygen diffusing uniformly into the films. Various energy levels ranging from 0.11 eV to 1.3 eV were detected and the density of all these decreased on annealing.     

Electronic properties of the silicon-thermally grown tantalum oxide interface

MOS capacitance measurements showed that the Si-Ta2O5interface prepared by thermal oxidation at ∼530°C of vacuum deposited Ta film followed by a heat treatment at 350°C in N2-H2is characterized by a negative "oxide" charge (6 × 10¹¹e/cm^-2at flat-band) and by an interface state density of ∼ 1 × 10¹²cm^-2(eV)^-1. The room temperature instability is small. The breakdown strength is >8 × 10⁶V/cm.     

厚度对TaN薄膜电性能的影响研究

采用直流反应磁控溅射法制备了TaN薄膜,研究了薄膜厚度对TaN薄膜微观结构及电性能的影响。结果表明,薄膜厚度对TaN薄膜的表面形貌和相结构都没有影响,但会显著影响TaN薄膜的电学性能。在87~424 nm的范围内,随着薄膜厚度的增大,所制TaN薄膜的电阻率从555×10–6.cm减小到285×10–6.cm,方阻从84/□减小到9/□,电阻温度系数(TCR)从–120×10–6/℃增加到+50×10–6/℃。可以通过调节薄膜的厚度调节TaN薄膜的电阻率和TCR。     

Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing

The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta₂O₅) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic β-phase Ta₂O₅. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta₂O₅/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was <20 nA cm^?2 at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was Poole–Frenkel.     

Effects of annealing in O2 and N2 on the electrical properties of tantalum oxide thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition

The tantalum oxide thin films with a thickness of 14 nm were deposited at 95°C by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECRPECVD), and annealed at various temperatures (700∼850°C) in O₂ and N₂ ambients. The microstructure and composition of the tantalum oxide thin films and the growth of interfacial silicon oxide layer were investigated and were related to the electrical characteristics of the film. Annealing in an O₂ ambient led to a high dielectric constant (ε_r(Ta₂O₅) = 24) as well as a small leakage current (E_bd = 2.3 MV/cm), which were due to the improved stoichiometry and the decreased impurity carbon content. Annealing in an N₂ ambient resulted in poor and nonuniform leakage current characteristics. The as-deposited tantalum oxide films were crystallized into δ-Ta₂O₅ after annealing at above 750°C regardless of the ambient. The leakage current of the film abruptly increased after annealing at 850°C probably because of the stress caused by thermal expansion or contraction.     

Ce:YIG薄膜中氧空位对光吸收性能的影响

讨论了Ce替代石榴石薄膜制备条件对其光吸收性能的影响.通过引入氧空位概念,提出了溅射气氛中的氧含量对薄膜中Ce元素价态影响的理论模型.基于该模型,讨论了Ce：YIG晶体中氧空位的产生机理.研究表明,当晶格中存在过量氧空位时,会导致部分Fe^3＋被还原成Fe^2＋,使得薄膜的光吸收显著增大.实验结果证实,在Ce：YIG薄膜的晶化过程中,采用富氧气氛可以使得薄膜中Ce元素的价态以Ce^3＋离子为主而Ce^4＋离子含量较少,从而有效降低薄膜的光吸收.溅射气氛中的氧含量及后续热处理过程中氧含量的大小均会直接影响Ce：YIG薄膜的光吸收特性.     

退火温度对高介电常数Ta2O5薄膜电学性能的影响

利用磁控溅射法在硅(Si)衬底上沉积了Ta2O5薄膜,对薄膜进行了不同温度的退火处理,并利用X射线衍射仪对薄膜的微观结构进行了分析.然后在Si的背面和介电薄膜的上面沉积Pt电极,组成了金属—氧化物—半导体( MOS)电容器,对不同温度下退火得到的薄膜制备的MOS电容器的电学性能进行了研究.结果表明,薄膜在700℃开始结...     

Reduction of defect states of tantalum oxide thin films with additive elements

Electrical properties of tantalum oxide (Ta₂O₅) thin films formed by metalorganic decomposition have been studied with respect to their defect states. A shallow band of defect states, which are the origin of hole traps, is detected by thermally stimulated current. The defect states in the Ta₂O₅ films are fully suppressed with additive elements such as TiO₂ and WO₃. It is considered that oxygen vacancies are fully compensated by Ti⁴⁺ ions or W⁶⁺ ions that are substitutionally incorporated into Ta⁵⁺ sites.     

Dielectric properties of plasma polymerized films

Dielectric properties of plasma polymerized polyvinyl carbazole PVCa and butane films have been analysed in the frequency range 10 to 10s Hz. In order to explain the experimental data obtained, the Maxwell-Garnett (MG) and Bruggemann self-consistent (BSC) models were modified for the case of three-component composites. The dielectric parameters of butane films have been evaluated     

Mechanical properties of plasma polymer films

A characteristic surface structure is observed on the samples prepared by plasma polymerization of n-hexane and n-heptane microwave discharge. This typical structure depends on the deposition conditions. The interpretation of the structural changes was based on the nature of the plasma polymer, one result of which is the frost effect that we observed     

氧压对PLD制备掺铜ZnO薄膜光学性质的影响

为了研究生长氧压对ZnO薄膜的结构和光学性质的影响,采用脉冲激光沉积技术,在P-Si〈111〉衬底上制备了不同生长氧压下的掺铜ZnO薄膜.利用X射线衍射仪对样品的结构进行了分析,并用荧光分光光度计对样品的光致发光谱进行了测量.结果表明,所有样品均在2θ=34.3°附近出现ZnO(002)衍射峰,没有发现Cu的衍射峰,在...     

Effect of substrate bias on the properties of plasma deposited organosilicone (pp-HMDSN) thin films

Organosilicone thin films have been deposited by plasma polymerization (pp) in a plasma enhanced chemical vapor deposition (PECVD) system using hexamethyldisilazane (HMDSN:C6H19Si2N) as a monomer precursor, at different biases of the stainless-steel substrate holder. The substrate bias affected film thickness, surface morphology, chemical composition and photoluminescence (PL) emission. For a negatively biased substrate, it is found that the film thickness is the minimum, while the porosity and PL emission are the maximum. For a positively biased substrate, the thickness and the ratio of Si/N are the maximum which correspond to a blue shift of the PL emission in comparison with the case of non-biased grounded substrate. In addition, the characterization of the plasma using a single cylindrical Langmuir probe has been performed to obtain information about both the electron density and the positive ion energy, where it can be concluded that the ion energy plays a major role in determining film thickness.     

高频固体钽电解电容器电性能与钽粉

对高频固体钽电容器应特别关注高频阻抗、电感量、等效串联电阻、纹波电流等参数。研究这类电容器电性能参数与钽粉性能的关系表明：当前对钽粉应以提高化学纯度、增多品种和规格、改善性能,以满足制造不同用途的电容器的需要