纳米铁粉烟幕对1.06μm和10.6μm激光的消光特性研究

在烟幕性能测试评价实验室中测试分析了纳米铁粉作为烟幕干扰材料对1.06μm和10.6μm激光的消光特性.在容积为20m3的烟箱中分别喷撒30g纳米铁粉,通过测量其在不同时刻的激光透过率和烟幕质量浓度,测得纳米铁粉对1.06μm和10.6μm激光的质量消光系数分别为1.833m2·g-1,1.474m2·g-1,表明纳米铁粉对双波长激光均具有显著的干扰效果.     

纳米碳纤维烟幕红外消光性能研究

利用烟幕箱测试分析了纳米碳纤维作为烟幕干扰材料的红外消光性能.在容积为20 m3烟幕箱中喷洒20g不同尺寸分布的纳米碳纤维,通过测量激光透过率和烟幕浓度,得到纳米碳纤维对1.06μm和10.6μm两种波长的激光最大质量消光系数分别为2.1304m2·g-1和1.2362m2·g-1;利用红外热像仪通过对靶标图像的观测记录,表明纳米碳纤维烟幕在8μm～12μm波段也具有显著的红外图像遮蔽能力.     

微米铜粉对红外、10.6 μm激光的衰减性能研究

为选择一种能够遮蔽红外与激光的烟幕干扰材料,在烟幕箱中测试了组分配比不同的微米铜粉的红外与10.6 μm激光烟幕透过率,当烟幕浓度为1.0 g·m-3时,1~3 μm,3~5 μm,8~14 μm红外的透过率均小于30%,10.6 μm激光的透过率小于20%,红光铜粉、青红光铜粉和青光铜粉对红外与10.6 μm激光的衰减能力逐渐增强;同时测试了微米铜粉对红外热像仪的干扰效果,浓度为2.0 g·m-3时,青光铜粉能够完全遮蔽红外热像仪。     

石墨烯烟幕红外激光消光性能研究

石墨烯片具有质轻、层薄、比表面大的优点,满足烟幕材料所需的要求.为了探索石墨烯在干扰红外成像制导武器方面的应用,利用20m3烟箱,通过快速热引爆石墨烯原材料获得烟幕的方法,测试了烟幕在1.06 μm激光的透过率曲线以及8～14μm波段的红外图像的遮蔽特性,获得了烟幕对1.06μm激光和8～14μm红外波段的平均质量消光系数均在2.0 m2.g-1以上,对红外光具有显著的干扰效果.分析了烟幕粒子的扫描电子显微图像、透射电镜图和X射线衍射图谱,结果表明所制备的烟幕粒子为石墨烯片组成,石墨烯烟幕粒子的微观结构有利于对红外光的吸收和散射.     

纳米石墨烟幕对红外激光的消光特性研究

文中分析了纳米石墨作为烟幕干扰材料的吸波特性,在喷洒纳米石墨质量不同的情况下,利用烟幕箱测试了1.06μm和10.6μm两种波长激光透过率与时间的关系曲线,用滤膜称重法测量了纳米石墨烟幕在不同时间段的质量浓度,从而测得了纳米石墨对两种红外激光的平均质量消光系数,分别为1.2791m2·g-1和1.0252m2·g-1,表明纳米石墨对红外激光具有显著的干扰效果.     

纳米银粉的红外消光特性研究

在容积为20m3的烟箱中分别喷撒30g纳米银粉,通过测量其在不同时刻的激光透过率和烟幕质量浓度,测得纳米银粉对1.06μm近红外和10.6 μm远红外激光的质量消光系数分别为1.833 m2·g-1和1.474 m2·g-1;利用红外热像仪测试了纳米银粉在8～12μm波段对靶标红外热像的遮蔽效果.结果表明,纳米银粉对双波长红外激光系统、红外热像仪均具有显著的干扰作用,是一种极具潜力的宽波段烟幕干扰材料.     

石墨烯烟幕红外干扰性能研究

氧化还原法制备了石墨烯,用透射电镜、扫描电镜、原子力显微镜、拉曼光谱、红外光谱等对石墨烯进行了表征,并在烟箱中对石墨烯烟幕的红外干扰性能进行了测试。结果表明,石墨烯烟幕对1.6～14mm红外连续光谱均表现出优异的消光能力,对3～5mm和8～14mm红外的质量消光系数最高达5.49 m~2/g和4.78 m~2/g,平均质量消光系数分别为3.91 m~2/g和3.25 m~2/g,干扰性能明显优于现有红外干扰烟幕材料。此外,石墨烯气溶胶悬浮性能良好,烟幕沉降速度不高于1.63×10~(-3) m/s。     

烟幕对红外激光传输的能量衰减研究

主要论述了发烟剂所形成的烟幕对1.06μm红外激光传输的能量衰减.研究了烟幕对红外激光传输的能量衰减机理,并在烟幕箱中进行了多种发烟剂对红外激光的能量衰减试验,试验结果表明,红外干扰发烟剂能显著地衰减红外激光传输能量.     

膨胀石墨红外消光性能研究

膨胀石墨是一种新型多波段无源干扰材料.为测试膨胀石墨红外消光性能,在分析烟幕消光机理的基础上,利用烟箱测试了膨胀石墨烟幕对3～5 μm、8～12 μm两个波段红外的透过率与时间的关系曲线,用滤膜称重法测量了膨胀石墨烟幕在不同时刻的质量浓度,计算了膨胀石墨烟幕在两个红外波段的平均质量消光系数,分别为0.8013 m<'2...     

铜粉烟幕干扰3～5 μm红外波段性能测试研究

运用红外热成像仪分别在烟箱和外场研究了铜粉烟幕对3～5μm红外波段的遮蔽效果,并计算了消光系数.研究表明铜粉发烟剂对3～5μm中红外波段有良好的消光性能.在20m3烟箱中施放20g铜粉发烟剂有效遮蔽时间在3 min以上;相同质量浓度的烟幕在外场红外有效干扰时间在30 s以上.本研究为该类烟幕的实际应用提供了参考.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.