一种通用的并联反馈式微波介质振荡器设计方法

介绍了并联反馈式介质振荡器的设计方法和相关理论,分析了影响介质振荡器性能的一些参数。采用高频路仿真和场仿真软件对13.20 GHz的介质振荡器进行设计,仿真结果表明,在偏离载频10 kHz处输出信号相噪为-113.6 dBc/Hz,功率为 10.026 dBm。     

基于CST与ADS的介质谐振振荡器的设计

分析了介质谐振振荡器的起振和稳频的原理,研究了一种低相位噪声的介质谐振振荡器的设计方法。以X波段为例,利用CST Microwave Studio 2010软件仿真了微带线与介质谐振器耦合的模型,将仿真得到的结果导入S2P文件中。再利用Agilent ADS 2011软件仿真介质谐振振荡器的完整电路,采用S参数仿真和谐波仿真分析等方法设计介质谐振振荡器,结合理论分析,调整和修改实验电路的参数值,使模型达到最好的优化结果。最后通过测试验证仿真结果。采用NEC公司的2SC5508芯片作为放大器,得出微波振荡器的输出频率为10.6 GHz,输出功率为5.19 dBm和较低的相位噪声,其在偏离中心频率10 kHz处小于-121 dBc/Hz。     

基于基片集成波导谐振器的压控振荡器设计

设计了一种基于基片集成波导谐振器的X波段压控振荡器。首先分析了串联反馈式振荡器以及基片集成波导谐振器的理论,然后在高频电磁仿真软件ADS中进行仿真和设计,并通过将变容管合理地引入谐振器,实现了电调谐的目的。最终设计完成了一个工作于X波段的基片集成波导压控振荡器。此压控振荡器与传统的介质压控振荡器(DRO)相比,具有稳定性高、平面化以及成本低的优点。由于采用了ADS中的联合仿真功能进行振荡器的设计,仿真结果的准确性得到了提高,减小了实物的调试工作量。测试结果为:工作频率为7 GHz,调谐范围为30 MHz,输出功率≥7 dBm,谐波抑制度≥22 dBc,相位噪声优于-106 dBc/Hz@100 kHz。     

微波小型化固态介质谐振器振荡器的发展

介绍了近年来微波小型化固态介质谐振器振荡器（ＤＲＯ）研究方面的新成就。重点介绍了介质材料、ＤＲＯ的频率调谐特性、相位噪声性能的优化、ＤＲＯ的拓展设计以及焊封和可靠性。     

低相噪锁相介质振荡器研究

针对高的相位噪声指标要求,对取样锁相介质振荡器进行了研究.通过相位噪声分析,明晰了采用介质振荡器与取样锁相技术降低相位噪声的机理,并分别对介质振荡器与锁相环路进行了设计.设计中,应用HFSS与ADS对介质振荡器进行了联合仿真,体现了计算机辅助设计的优势.最终研制出17 GHz锁相介质振荡器,测试结果为:输出功率13.1 dBm;杂波抑制>70 dB;谐波抑制>25 dB; 相位噪声为-105 dBc/Hz@1 kHz,-106 dBc/Hz@10 kHz,-111 dBc/Hz@100 kHz,-129 dBc/Hz@1 MHz.     

C频段介质稳频振荡器的设计

分析了C频段介质稳频振荡器的设计和实现过程,讨论了影响介质振荡器性能的因素,采取改善相位噪声的方法,得出了较为满意的测试结果.通过建立物理等效模型,从理论上推导了变容管调谐介质振荡器的最佳耦合微带长度.采用计算机辅助设计,得到了较好的结果.     

Ka波段介质谐振器的研究

介质谐振器由于具有体积小、损耗低等优点,得到了越来越广泛的应用.设计了一款Ka波段介质稳频振荡器,振荡器中集成了介质谐振器用于选频.通过采用合适的介质振荡子及适当尺寸的金属屏蔽腔,使介质谐振器谐振在Ku波段,再通过单片进行倍频放大,从而得到Ka波段信号.介绍了介质振荡子的选取及参数计算.并以此为根据作为介质谐振器的设计原则,最后得到的Ka波段信号输出频率(fo)为38.22 GHz,输出功率(Po)为7.38 dBm,相位噪声为-80 dBc/Hz@100 kHz.     

C波段介质振荡器的研究与设计

利用负阻原理设计了5.9 GHz介质振荡器（DRO）,采用HFSS软件对介质谐振块（DR）进行三维仿真,应用Agi-lent公司的ADS软件对DRO进行了优化设计和非线性分析,用该方法制作的并联反馈式DRO性能良好,输出功率为10 dBm,相位噪声达到-100 dBc/Hz@10 kHz,-124 dBc/Hz@100 kHz。     

一种X 波段串联反馈介质振荡器的设计

在毫米波通信系统中,振荡器是最基本的微波频率源。本文介绍了一种串联反馈型介质振荡器的设计方法, 基于负阻理论和谐波平衡法,利用HFSS 和ADS 设计了10.5Ghz 的低相位噪声串联反馈型介质振荡器。HFSS 用来精 确仿真介质谐振器与微带线的耦合;ADS 用来对振荡器非线性仿真,优化相位噪声和输出功率。在设计过程中,采 用低噪声PHEMT 晶体管ATF-34143 作为振荡器的有源器件,高Q 值、高介电常数的介质谐振器作为稳频元件,确 定振荡器的谐振频率。     

U-band shield suspended-stripline Gunn DRO and VCO

A millimeter-wave IC dielectric resonator oscillator (DRO) is proposed. Equations that give the resonant frequency of the dielectric resonator DR in suspended stripline (SSL) are derived. A U-band voltage-controlled oscillator (VCO) with varactor tuning also has been developed. The Gunn diode and varactor used in both of the oscillators are commercially available packaged devices. Restrictions on the performance of the oscillators imposed by packaged and mounted networks and the self-characteristics of the solid-state devices have been analyzed. An electronic tuning range greater than 1000 MHz with an output power exceeding 15 dBm across the bandwidth in the 53-GHz region has been realized for the SSL VCO. An SSL DRO with an output power of more than 17 dBm and a mechanical tuning range of 1.5 GHz in the 54-GHz region has been achieved     

X波段介质谐振器振荡器和缓冲放大器的研究

微波振荡器代表所有基本微波通信系统的能源来源。研究设计8．95GHz的低噪声砷化镓场效应管并联反馈介质谐振器振荡器,为了放大输出功率和提高负载牵引,在介质谐振器振荡器后一级加缓冲放大器,最终的输出功率是＋13．33dBm。测试证明输出信号的相位噪声偏离中心频率100kHz可达-116．49dBc／Hz,偏离中心频率10kHz可达-91．74dBc／Hz。     

X波段介质振荡器的设计

研究了一种具有较宽机械调频范围和较低相位噪声的x波段介质振荡器设计方法.利用介质谐振器法对三种型号的介质谐振器(DR)材料进行了精确的测试,得到了其介电常数εr和损耗角正切值tanδ以及DR的谐振频率.利用仿真软件建立微带线与谐振器耦合模型,通过仿真提取其S2P文件.选用GaAs FET ATF26884作为电路中的放大器件,使用生成的S2P文件建立介质振荡器(DRO)电路模型,调整耦合段和输出匹配微带线的长度,得到较低的相位噪声.测试证明输出信号的相位噪声在偏离中心频率100 kHz处小于-100 dBc/Hz.     

Novel Utilization of the Dielectric Resonator Antenna as an Oscillator Load

For the first time, the idea of using the dielectric resonator antenna (DRA) as an oscillator load, named as DRAO, is presented in this paper. Unlike the conventional dielectric resonator oscillator (DRO), where the DR was merely used as a resonator, the DR here serves as both the radiating and oscillating loads. In addition, a compact tri-function hollow DR that incorporates the packaging function to the above dual function is demonstrated. The design procedures of the dual- and tri-function DRAOs are discussed. For demonstration, the DRAOs are designed at 1.85 GHz, which is used in the popular personal communications system (PCS). The return losses, input impedances, antenna gains, signal spectrums, phase noise, and radiation patterns of the two DRAOs are presented. It is shown that the loaded Q_L factor of the DRA can be increased by internally embedding a compact metallic cavity to the DR. It is found that with a higher loaded Q_L factor, the phase noise of the antenna oscillator using the hollow DRA (tri-function DRAO) is better than that using a solid DRA (dual-function DRAO).     

35 GHz dielectric resonator stabilised gunn oscillator

A 35 GHz dielectric resonator oscillator(DRO) using GaAs Gunn diode in microstrip configuration has been designed and developed. The oscillator, with an integral waveguide-to-microstrip transition, delivered an output greater than 18 dBm. Phase noise of the oscillator is found to be better than ?80 dBc/Hz at 100 KHz away from the carrier. A frequency drift of about ±25 MHz has been observed over the temperature range from ?10 °C to 50 °C.     

On the conception and analysis of a 12-GHz push-push phase-locked DRO

This paper describes the design and behavior of a 12-GHz push-push dielectric resonator oscillator in a phase-locked environment. This phase-locked dielectric resonator oscillator (PLDRO) differs from conventional designs on many fronts. First, it uses a push-push oscillator for its improved phase noise and reduced fundamental frequency. Second, the phase detection is implemented at a 3-GHz IF as an alternative to detecting at RF using a sampling phase detector (PD). Finally, the push-push PLDRO is tuned via coupled microstrip lines to minimize oscillator loading. These modifications are intended to minimize the risk of PLDRO lock failures by maintaining a constant PD gain via amplifiers operating at P/sub 1dB/, and by halving the DRO fundamental frequency using the push-push approach. Experimental results indicate a fundamental suppression of 27 dBc, and single-sideband phase noise densities of -105, -110, and -125 dBc/Hz at 10-kHz, 100-kHz, and 1-MHz offsets, respectively, from a 12-GHz carrier.     

Quasi-planar K-band push-push low phase noise oscillator stabilized by cavity resonator

The results of developing a K-band (24 GHz) push-push low phase noise transistor oscillator have been presented. This oscillator is stabilized by a rectangular resonant metallic cavity. The power level of output signal is ?9.5 dBm, the fundamental harmonic suppression is 21 dB. Single sideband (SSB) phase noise spectral density of ?98 dBc/Hz at 10 kHz and ?128 dBc/Hz at 100 kHz offset from the carrier frequency is at the level of dielectric resonator oscillators (DRO) scaled to the same frequency. The oscillator features a compact size, low cost quazi-planar design and it is built using commercially available off the shelf parts.     

MMIC family for DBS down-converter with pulse-doped GaAs MESFETs

A monolithic microwave integrated circuit (MMIC) family was demonstrated as a low-noise block (LNB) downconverter for use in direct broadcast satellite (DBS) receivers operating from 11.7 to 12 GHz. A 12-GHz low-noise amplifier (LNA), a 12-GHz mixer (MIX), a 10.7-GHz dielectric resonator oscillator (DRO), and a 1-GHz IF amplifier (IFA) were designed with GaAs MMIC technology. These MMIC chips were designed to form a complete LNB downconverter function with the exception of the dielectric resonator. The most significant result of this work is that practical low-noise performance can be achieved without the use of high-electron-mobility transistors (HEMTs) in a preceding stage of the MMIC LNB downconverter. Almost noise-free satellite broadcast TV pictures were seen by using a parabolic antenna, 40 cm in diameter, without needing any additional circuit adjustment     

Ku频段多通道抗振激励源设计

介绍一种Ku频段多通道抗振激励源设计,采用X频段抗振低相噪介质稳频振荡器(DRO),通过结构固连减少各部分电路在振动环境中的相对运动,保证了激励源在振动条件下的稳定性.采用二次谐波镜频抑制混频器一次变频,简化了激励源电路并实现了对本振泄漏的高抑制度和良好的边带抑制.多芯片微带混合集成设计实现了激励源的小型化.研制的样机达到了振动环境下相噪优于-97 dBc/Hz@10kHz,本振抑制大于32 dB、边带抑制大于35 dB的优良性能,验证了设计技术的有效性.     

C波段微波低相位噪声介质振荡源

介绍了微波低相位噪声介质振荡器的设计方法。就影响介质振荡器相位噪声的因素进行了讨论,从谐振回路有载Q值、有源器件、增益压缩量、电路模式等几个方面提出了降低相位噪声的方法,并给出了一个C波段微波低相噪振荡器的设计实例。测试结果表明:该振荡器工作频率3 900 MH z,输出功率大于10 dBm,相位噪声达到-102 dB c/H z@1 kH z;-128 dB c/H z@10 kH z。     

S波段低相噪同轴介质压控振荡器设计

运用串联反馈振荡器理论设计了一个工作于S波段的低相噪同轴介质压控振荡器。首先分析了同轴介质谐振器的理论以及串联反馈振荡器的工作原理,然后在高频电磁仿真软件HFSS和ADS中进行仿真和设计。为了实现电调谐,将变容管合理地加入振荡器,最终设计完成了一个S波段的低相噪同轴介质压控振荡器。通过对实物成品的测量和调试表明,此压控振荡器达到了预定的技术指标,各项性能良好。测试结果:工作频率为2.075~2.250 GHz,调谐范围为1.75 GHz,输出功率≥11 dBm,谐波抑制度≥23 dBc,相位噪声优于-133 dBc/Hz@100kHz。